2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 11.2 dB gain, 500 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Market Application - 2729GN-500V is designed for S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 1120 W 150 V -8 to +0 V Maximum Temperatures -55 to +125 C Storage Temperature (TSTG) Operating Junction Temperature +250 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d Dr VSWR-T jc Characteristics Output Power Power Gain Drain Efficiency Droop Load Mismatch Tolerance Thermal Resistance Test Conditions Pout=500W, Freq=2700,2800,2900 MHz Pout=500W, Freq=2700,2800,2900 MHz Pout=500W, Freq=2700,2800,2900 MHz Pout=500W, Freq=2700,2800,2900 MHz Pout=500W, Freq= 2900MHz Min 500 11.2 45 Typ 540 11.9 50 Max 1.0 3:1 Pulse Width=100uS, Duty=10% 0.18 Units W dB % dB C/W Bias Condition: Vdd=+50V, Idq=100mA average current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 150V VgS = -8V, VD = 0V Vgs =-8V, ID = 64mA 64 20 150 Export Classification: EAR-99 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information mA mA V 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz TYPICAL BROAD BAND PERFORMACE DATA Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) 2700 MHz 35 562 2.45 -15 52 12.0 Droop (dB) 0.5 2800 MHz 35 537 2.25 -17 55 11.8 0.4 2900 MHz 35 575 2.05 -9 61 12.1 0.4 Model 2729GN500V Vdd = 50V, 100uS, 10% 700 24 600 20 400 16 300 Gain (dB) Pout (W) 500 200 12 100 0 8 10 15 20 25 30 Pin (W) 35 2.7GHz 40 2.8GHz 2.9GHz Model 2729GN500V Vdd = 50V, 100uS, 10% 70% Efficiency (%) 60% 50% 40% 30% 20% 10% 0% 10 15 20 25 Pin (W) 30 2.7GHz 35 2.8GHz 40 2.9GHz For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% L-Band Radar 1200 - 1400MHz TRANSISTOR IMPEDANCE INFORMATION Note: Zsource is looking into the input circuit; Z Load is looking into the output circuit. Impedance Data Freq (GHz) Zs Zl 2.7 7.06 - j11.66 1.88 - j2.95 2.8 5.78 - j11.34 1.65 - j2.46 2.9 4.40 - j10.68 1.48 - j2.00 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz TEST CIRCUIT DIAGRAM Board Material: Roger Duriod 6006 @ 25 Mil Thickness, Er=6.15 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz 55-KR PACKAGE DIMENSION Dimension A B C D E F G H I J K L M N Min (mil) 370 498 700 830 1030 101 151 385 130 003 135 105 085 065 Min (mm) 9.40 12.65 17.78 21.08 26.16 2.56 3.84 9.78 3.30 .076 3.43 2.67 2.16 1.65 Max (mil) 372 500 702 832 1032 102 152 387 132 004 137 107 86 66 Max (mm) 9.44 12.7 17.83 21.13 26.21 2.59 3.86 9.83 3.35 0.10 3.48 2.72 2.18 1.68 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp. Revision History Revision Level / Date 0.1 / 18 January 2013 Para. Affected - Description Initial Preliminary Release For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information