For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
GENERAL DESCRIPTION
The 2729GN-500V is an internally matched, COMMON SOURCE, class
AB, GaN on SiC HEMT transistor capable of providing over 11.2 dB
gain, 500 Watts of pulsed RF output power at 100μs pulse width, 10%
duty factor across the 2700 to 2900 MHz band. The transistor has
internal pre-match for optimal performance. This hermetically sealed
transistor is designed for S-Band Radar applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.
Market Application – 2729GN-500V is designed for S-Band Pulsed
Radar
CASE OUTLINE
55-KR
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 1120 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pout=500W, Freq=2700,2800,2900 MHz 500 540 W
Gp Power Gain Pout=500W, Freq=2700,2800,2900 MHz 11.2 11.9 dB
d Drain Efficiency Pout=500W, Freq=2700,2800,2900 MHz 45 50 %
Dr Droop Pout=500W, Freq=2700,2800,2900 MHz 1.0 dB
VSWR-T Load Mismatch
Tolerance
Pout=500W, Freq= 2900MHz 3:1
Өjc Thermal Resistance Pulse Width=100uS, Duty=10% 0.18 °C/W
Bias Condition: Vdd=+50V, Idq=100mA average current (Vgs = -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off) Drain leakage current VgS = -8V, VD = 150V 64 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 20 mA
BVDSS Drain-source breakdown
voltage
Vgs =-8V, ID = 64mA 150 V
Export Classification: EAR-99
2729GN-500V
500 Watts - 50 Volts, 100 us, 10%
S-Band Radar 2700 - 2900 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
TYPICAL BROAD BAND PERFORMACE DATA
Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) Droop
(dB)
2700 MHz 35 562 2.45 -15 52 12.0 0.5
2800 MHz 35 537 2.25 -17 55 11.8 0.4
2900 MHz 35 575 2.05 -9 61 12.1 0.4
Model2729GN‐500V
Vdd=50V,100uS,10%
0%
10%
20%
30%
40%
50%
60%
70%
10 15 20 25 30 35 40
Pin(W)
Efficiency(%)
2.7GHz 2.8GHz 2.9GHz
2729GN-500V
500 Watts - 50 Volts, 100 us, 10%
S-Band Radar 2700 - 2900 MHz
Model2729GN‐500V
Vdd=50V,100uS,10%
0
10 0
200
300
400
500
600
700
10 15 20 25 30 35 40
Pin(W)
Pout(W)
8
12
16
20
24
Gain(dB)
2.7GHz 2.8GHz 2.9GHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
TRANSISTOR IMPEDANCE INFORMATION
Note: Zsource is looking into the input circuit;
Load
Z is looking into the output circuit.
Impedance Data
Freq (GHz) Zs Zl
2.7 7.06 – j11.66 1.88 – j2.95
2.8 5.78 – j11.34 1.65 – j2.46
2.9 4.40 – j10.68 1.48 – j2.00
2729GN-500V
500 Watts - 50 Volts, 100 us, 10%
L-Band Radar 1200 - 1400MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
TEST CIRCUIT DIAGRAM
Board Material: Roger Duriod 6006 @ 25 Mil Thickness, Er=6.15
2729GN-500V
500 Watts - 50 Volts, 100 us, 10%
S-Band Radar 2700 - 2900 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
55-KR PACKAGE DIMENSION
Dimension Min (mil) Min (mm) Max (mil) Max (mm)
A 370 9.40 372 9.44
B 498 12.65 500 12.7
C 700 17.78 702 17.83
D 830 21.08 832 21.13
E 1030 26.16 1032 26.21
F 101 2.56 102 2.59
G 151 3.84 152 3.86
H 385 9.78 387 9.83
I 130 3.30 132 3.35
J 003 .076 004 0.10
K 135 3.43 137 3.48
L 105 2.67 107 2.72
M 085 2.16 86 2.18
N 065 1.65 66 1.68
2729GN-500V
500 Watts - 50 Volts, 100 us, 10%
S-Band Radar 2700 - 2900 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-
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Revision History
Revision Lev el / Date Para. Affected Description
0.1 / 18 January 2013 - Initial Preliminary Release
2729GN-500V
500 Watts - 50 Volts, 100 us, 10%
S-Band Radar 2700 - 2900 MHz
