THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Max 357.1 oC/W
• Device mounted on a PCB area of 1 cm2 .
ELE CT RICAL CHAR ACT ERIST ICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = -3 V) VCE = 60 V 10 nA
IBEX Base C ut-off Current
(VBE = -3 V) VCE = 60 V 20 nA
ICBO Collector Cut-off
Current (IE = 0) VCB = 75 V
VCB = 75 V Tj = 150 oC10
10 nA
µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 3 V 15 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA 40 V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10 µA75 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 µA6V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA 0.3
1V
V
VBE(sat)∗Collector-Base
Saturation Voltage IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA 0.6 1.2
2V
V
hFE∗DC Current Gain IC = 0.1 mA VCE = 10 V
IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 150 mA VCE = 1 V
IC = 500 mA VCE = 10 V
35
50
75
100
50
40
300
fTTransition Frequency IC = 20 mA VCE = 20V f = 100MHz 270 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1 MHz 4 8 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1MHz 20 25 pF
NF Noise Figure IC = 0.1 mA VCE = 10 V f = 1 KHz
∆f = 200 Hz RG = 1 KΩ4dB
h
ie∗Input Impedance VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 2
0.25 8
1.25 KΩ
KΩ
hre∗Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 8
410-4
10-4
hfe∗Small Signal Current
Gain VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 50
75 300
375
hoe∗Output Admittance VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 5
25 35
200 µS
µS
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 2 %
MMBT2222A
2/5