Silicon Epitaxial Planar Transistor PNP, -40V, -200mA Features: * * * Power dissipation (PC=200mW) Epitaxial planar die construction Available in lead free version Applications: * Maximum Rating: General purpose application and switching application @ Ta = 25C unless otherwise specified Parameter Symbol Value Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current -Continuous IC -200 mA Collector Dissipation PC 200 mW Junction and Storage Temperature Tj, Tstg -55 to 150 C Electrical Characteristics: Unit V @ Ta = 25C unless otherwise specified Parameter Symbol Test conditions Min Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -40 Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 Collector cut-off current ICBO VCB=-30V, IE=0 -0.05 Emitter cut-off current IEBO VEB=-5V, IC=0 -0.05 DC current gain hFE VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA Base-emitter saturation voltage VBE(sat) IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA -0.65 Transition frequency fT VCE=-20V, IE=-10mA f=100MHz 250 Collector output capacitance Cobo VCB=-5V, IE=0, f=1MHz 60 80 100 60 30 Max Unit V A 300 -0.25 -0.4 -0.85 -0.95 V MHz 4.5 pF www.element14.com www.farnell.com www.newark.com Page <1> 12/09/14 V1.0 Silicon Epitaxial Planar Transistor PNP, -40V, -200mA Electrical Characteristics: @ Ta = 25C unless otherwise specified Parameter Symbol Test conditions Collector output capacitance Ciob Noise figure NF Delay time td Rise time tr Storage time ts Fall time tf Min Max Unit VCB=-5V, IE=0, f=1MHz 10 pF VCE=-5V, IC=-0.1mA, f=1KHz, Rs=1K 4 dB VCC=-3V, VBE=-0.5V, IC=-10mA,IB1=-1mA 35 VCC=-3V, IC=-10mA, IB1=IB2=-1mA 225 35 nS 75 Typical Characteristics @ Ta = 25C unless otherwise specified www.element14.com www.farnell.com www.newark.com Page <2> 12/09/14 V1.0 Silicon Epitaxial Planar Transistor PNP, -40V, -200mA Package Outline: SOT-323 Soldering Footprint: Dim. Min. Max. A 1.8 2.2 B 1.15 1.35 C 1 Typical D 0.15 0.35 E 0.25 0.4 G 1.2 1.4 H 0.02 0.1 J K 0.1 Typical 2.1 2.3 Part Number Table Dimensions : Millimetres Description Part Number Transistor, Bipolar, PNP, -40V, -200mA MMST3906-7-F Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 12/09/14 V1.0