MICRONAS Edition Feb. 14, 2001 6251-109-4E 6251-485-2DS HAL501...506, 508, 509, HAL516...519, 523 Hall Effect Sensor Family MICRONAS HAL5xx Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5 2. Functional Description 6 6 6 6 7 7 8 9 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview 14 14 16 18 20 22 24 26 28 30 32 34 36 38 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.7. 4.8. 4.9. 4.10. 4.11. 4.12. 4.13. Type Descriptions HAL501 HAL502 HAL503 HAL504 HAL505 HAL506 HAL508 HAL509 HAL516 HAL517 HAL518 HAL519 HAL523 40 40 40 40 40 5. 5.1. 5.2. 5.3. 5.4. Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC 44 6. Data Sheet History 2 Micronas HAL5xx Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1.2. Family Overview The types differ according to the magnetic flux density values for the magnetic switching points, the temperature behavior of the magnetic switching points, and the mode of switching. 1. Introduction Type Switching Behavior Sensitivity see Page 501 bipolar very high 14 502 latching high 16 503 latching medium 18 504 unipolar medium 20 505 latching low 22 The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. 506 unipolar high 24 508 unipolar medium 26 509 unipolar low 28 The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 150 C. 516 unipolar with inverted output high 30 517 unipolar with inverted output medium 32 All sensors are available in a SMD-package (SOT-89B) and in a leaded version (TO-92UA). 518 unipolar with inverted output medium 34 1.1. Features: 519 unipolar with inverted output (north polarity) high 36 523 unipolar low 38 The HAL5xx family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior and the switching points. - switching offset compensation at typically 62 kHz - operates from 3.8 V to 24 V supply voltage - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - magnetic characteristics are robust against mechanical stress effects Latching Sensors: - short-circuit protected open-drain output by thermal shut down The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - constant switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics - ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to DIN 40839 Micronas Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. 3 HAL5xx Unipolar Switching Sensors: for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side. 1.4. Operating Junction Temperature Range A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). The relationship between ambient temperature (TA) and junction temperature is explained in section 5.1. on page 40. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 5xx 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range Example: HAL505UA-E Type: 505 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C A K E HAL501 501A 501K 501E HAL502 502A 502K 502E HAL503 503A 503K 503E HAL504 504A 504K 504E 1.6. Solderability HAL505 505A 505K 505E all packages: according to IEC68-2-58 HAL506 506A 506K 506E HAL508 508A 508K 508E HAL509 509A 509K 509E HAL516 516A 516K 516E HAL517 517A 517K 517E HAL518 518A 518K 518E HAL519 519A 519K 519E HAL523 523A 523K 523E Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. VDD 1 3 OUT 1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used 4 2 GND Fig. 1-1: Pin configuration Micronas HAL5xx HAL5xx HAL5xx 2. Functional Description The HAL 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-Pin for reverse voltages ranging from 0 V to -15 V. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Short Circuit & Overvoltage Protection Hysteresis Control Comparator Switch OUT Output 3 Clock GND 2 Fig. 2-1: HAL5xx block diagram fosc t B BON t VOUT VOH VOL t IDD 1/fosc = 16 s tf t Fig. 2-2: Timing diagram Micronas 5 HAL5xx 3. Specifications 3.1. Outline Dimensions sensitive area 4.55 0.15 0.2 1.7 0.3 sensitive area 4.06 0.1 1.5 0.4 0.3 y y 2 3.05 0.1 4 0.2 0.48 top view 1 2 3 0.55 0.4 1 2 3 0.4 0.75 0.2 1.15 3.1 0.2 2.55 min. 0.25 0.36 0.4 1.5 14.0 min. 0.42 3.0 1.27 1.27 branded side 2.54 0.06 0.04 branded side SPGS0022-5-A3/2E Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas 6 SOT-89B TO-92UA x center of the package center of the package y 0.95 mm nominal 1.0 mm nominal 45 0.8 SPGS7002-9-A/2E Fig. 3-2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. An improvement of the TO-92UA package with reduced tolerances will be introduced end of 2001. Micronas HAL5xx 3.4. Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -15 281) V -VP Test Voltage for Supply 1 -242) - V -IDD Reverse Supply Current 1 - 501) mA IDDZ Supply Current through Protection Device 1 -2003) 2003) mA VO Output Voltage 3 -0.3 281) V IO Continuous Output On Current 3 - 501) mA IOmax Peak Output On Current 3 - 2503) mA IOZ Output Current through Protection Device 3 -2003) 2003) mA TS Storage Temperature Range5) -65 150 C TJ Junction Temperature Range -40 -40 150 1704) C 1) 2) 3) 4) 5) as long as TJmax is not exceeded with a 220 series resistance at pin 1 corresponding to the test circuit on page 40 t < 2 ms t < 1000h Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 3.8 24 V IO Continuous Output On Current 3 0 20 mA VO Output Voltage (output switched off) 3 0 24 V Micronas 7 HAL5xx 3.6. Electrical Characteristics at TJ = -40 C to +170 C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 C IDD Supply Current over Temperature Range 1 1.6 3 5.2 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 20 ms VOZ Overvoltage Protection at Output 3 - 28 32 V IOH = 25 mA, TJ = 25 C, t = 20 ms VOL Output Voltage 3 - 130 280 mV IOL = 20 mA, TJ = 25 C VOL Output Voltage over Temperature Range 3 - 130 400 mV IOL = 20 mA IOH Output Leakage Current 3 - 0.06 0.1 A Output switched off, TJ = 25 C, VOH = 3.8 to 24 V IOH Output Leakage Current over Temperature Range 3 - - 10 A Output switched off, TJ 150 C, VOH = 3.8 to 24 V fosc Internal Oscillator Chopper Frequency - 49 62 - kHz TJ = 25 C, VDD = 4.5 V to 24 V fosc Internal Oscillator Chopper Frequency over Temperature Range - 38 62 - kHz ten(O) Enable Time of Output after Setting of VDD 1 - 30 70 s VDD = 12 V 1) tr Output Rise Time 3 - 75 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF tf Output Fall Time 3 - 50 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF RthJSB case SOT-89B Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-3 RthJA case TO-92UA Thermal Resistance Junction to Soldering Point - - 150 200 K/W 1) B > BON + 2 mT or B < BOFF - 2 mT for HAL 50x, B > BOFF + 2 mT or B < BON - 2 mT for HAL 51x 5.0 2.0 2.0 1.0 Fig. 3-3: Recommended pad size SOT-89B Dimensions in mm 8 Micronas HAL5xx 3.7. Magnetic Characteristics Overview at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching type TJ On point BON Off point BOFF Hysteresis BHYS Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C -0.8 0.6 2.5 -2.5 -0.8 0.8 0.5 1.4 2 mT 25 C -0.5 0.5 2.3 -2.3 -0.7 0.5 0.5 1.2 1.9 mT 170 C -1.5 0.7 3 -2.5 -0.2 2 0.4 0.9 1.8 mT HAL 502 -40 C 1 2.8 5 -5 -2.8 -1 4.5 5.6 7.2 mT latching 25 C 1 2.6 4.5 -4.5 -2.6 -1 4.5 5.2 7 mT 170 C 0.9 2.3 4.3 -4.3 -2.3 -0.9 3.5 4.6 6.8 mT HAL 503 -40 C 6.4 8.6 10.8 -10.8 -8.6 -6.4 14.6 17.2 20.6 mT latching 25 C 6 8 10 -10 -8 -6 13.6 16 18 mT 170 C 4 6.4 8.9 -8.9 -6 -4 11 12.4 16 mT HAL 504 -40 C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mT unipolar 25 C 9.5 12 14.5 5 7 9 4 5 6.5 mT 170 C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mT HAL 505 -40 C 11.8 15 18.3 -18.3 -15 -11.8 26 30 34 mT latching 25 C 11 13.5 17 -17 -13.5 -11 24 27 32 mT 170 C 9.4 11.7 16.1 -16.1 -11.7 -9.4 20 23.4 31.3 mT HAL 506 -40 C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mT unipolar 25 C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mT 170 C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mT HAL 508 -40 C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mT unipolar 25 C 15 18 20.7 13.5 16 19 1.5 2 2.7 mT 170 C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mT HAL 509 -40 C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mT unipolar 25 C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mT 170 C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mT HAL 516 -40 C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mT unipolar 25 C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mT inverted 170 C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mT HAL 517 -40 C 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 mT unipolar 25 C 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 mT inverted 170 C 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 mT HAL 518 -40 C 14 16.7 20 15.5 19 22 1.5 2.3 3 mT unipolar 25 C 13.5 16 19 15 18 20.7 1.4 2 2.8 mT inverted 170 C 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 mT HAL 501 bipolar Note: For detailed descriptions of the individual types, see pages 14 and following. Micronas 9 HAL5xx Magnetic Characteristics Overview, continued Sensor Parameter Switching type TJ On point BON Off point BOFF Hysteresis BHYS Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -5.4 -3.8 -2.1 -7.7 -5.9 -4.3 1.6 2.1 2.8 mT -5 -3.6 -2 -7.2 -5.5 -3.8 1.5 1.9 2.7 mT HAL 519 -40 C unipolar 25 C inverted 170 C -5.2 -3.0 -1.5 -6.8 -4.6 -2.8 0.9 1.6 2.6 mT HAL 523 -40 C 28 34.5 42 18 24 30 7 10.5 14 mT unipolar 25 C 28 34.5 42 18 24 30 7 10.5 14 mT 170 C 28 34.5 42 18 24 30 7 10.5 14 mT Note: For detailed descriptions of the individual types, see pages 14 and following. mA 25 HAL 5xx 15 10 HAL 5xx 4.5 20 IDD mA 5.0 TA = -40 C TA = 25 C TA=170 C IDD 4.0 TA = -40 C 3.5 TA = 25 C 3.0 5 TA = 100 C 2.5 TA = 170 C 2.0 0 1.5 -5 1.0 -10 -15 -15-10 -5 0 0.5 5 10 15 20 25 30 35 V VDD Fig. 3-4: Typical supply current versus supply voltage 10 0 1 2 3 4 5 6 7 8 V VDD Fig. 3-5: Typical supply current versus supply voltage Micronas HAL5xx mA 5 kHz 100 HAL 5xx HAL 5xx 90 IDD fosc 80 4 70 VDD = 24 V VDD = 12 V 3 TA = 25 C 60 TA = -40 C 50 2 TA = 170 C 40 VDD = 3.8 V 30 1 20 10 0 -50 0 50 100 150 0 200 C 0 5 10 15 20 Fig. 3-6: Typical supply current versus ambient temperature Fig. 3-8: Typ. Internal chopper frequency versus supply voltage kHz 100 HAL 5xx 90 fosc 30 V VDD TA kHz 100 25 HAL 5xx 90 fosc 80 VDD = 3.8 V 70 80 70 TA = 25 C 60 50 VDD = 4.5 V...24 V TA = -40 C 50 TA = 170 C 40 40 30 30 20 20 10 10 0 -50 0 50 100 150 200 C TA Fig. 3-7: Typ. internal chopper frequency versus ambient temperature Micronas 60 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 3-9: Typ. internal chopper frequency versus supply voltage 11 HAL5xx mV 400 mV 400 HAL 5xx IO = 20 mA HAL 5xx IO = 20 mA 350 VOL VDD = 3.8 V VOL 300 300 VDD = 4.5 V TA = 170 C VDD = 24 V 250 TA = 100 C 200 200 TA = 25 C 150 TA = -40 C 100 100 50 0 0 5 10 15 20 25 30 V 0 -50 0 50 100 VDD 200 C TA Fig. 3-10: Typical output low voltage versus supply voltage mV 600 150 Fig. 3-12: Typical output low voltage versus ambient temperature HAL 5xx mA 104 HAL 5xx IO = 20 mA 103 VOL 500 IOH 102 TA = 170 C 101 400 TA = 150 C 100 300 TA = 170 C TA =100 C 200 100 10-1 TA = 100 C 10-2 TA = 25 C 10-3 TA = -40 C 10-4 TA = 25 C TA = -40 C 10-5 0 3 3.5 4.0 4.5 5.0 5.5 VDD Fig. 3-11: Typical output low voltage versus supply voltage 12 6.0 V 10-6 15 20 25 30 35 V VOH Fig. 3-13: Typical output high current versus output voltage Micronas HAL5xx A dBV 80 HAL 5xx 102 HAL 5xx VP = 12 V TA = 25 C Quasi-PeakMeasurement test circuit 2 70 101 IOH VDD VOH = 24 V 60 100 50 max. spurious signals 10-1 40 VOH = 3.8 V 10-2 30 10-3 20 10-4 10-5 -50 10 0 50 100 150 200 C Fig. 3-14: Typical output leakage current versus ambient temperature IDD 0.10 1.00 1 10.00 100.00 10 100 1000.00 1000 MHz f TA dBA 30 0 0.01 Fig. 3-16: Typ. spectrum at supply voltage HAL 5xx VDD = 12 V TA = 25 C Quasi-PeakMeasurement 20 max. spurious signals 10 0 -10 -20 -30 0.01 0.10 1.00 1 10.00 100.00 10 100 1000.00 1000 MHz f Fig. 3-15: Typ. spectrum of supply current Micronas 13 HAL501 4. Type Description Applications 4.1. HAL 501 The HAL 501 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: The HAL 501 is the most sensitive sensor of this family with bipolar switching behavior (see Fig. 4-1). - applications with large airgap or weak magnets, - rotating speed measurement, The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. - CAM shaft sensors, and - magnetic encoders. Output Voltage For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. VO BHYS Magnetic Features: VOL - switching type: bipolar - very high sensitivity BOFF 0 BON B - typical BON: 0.5 mT at room temperature Fig. 4-1: Definition of magnetic switching points for the HAL 501 - typical BOFF: -0.7 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset BOFFSET Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C -0.8 0.6 2.5 -2.5 -0.8 0.8 0.5 1.4 2 25 C -0.5 0.5 2.3 -2.3 -0.7 0.5 0.5 1.2 1.9 100 C -0.9 0.5 2.5 -2.5 -0.6 0.9 0.5 1.1 1.8 0 mT 140 C -1.2 0.6 2.8 -2.5 -0.5 1.3 0.5 1.1 1.8 0 mT 170 C -1.5 0.7 3 -2.5 -0.2 2 0.4 0.9 1.8 0.2 mT -0.1 -1.4 -0.1 mT 1.4 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 14 Micronas HAL501 mT 3 BON BOFF mT 3 HAL 501 BON BOFF 2 1 HAL 501 BONmax 2 BOFFmax 1 BON BONtyp 0 0 BOFFtyp -1 TA = -40 C -1 BOFF -2 BONmin VDD = 3.8 V TA = 25 C VDD = 4.5 V... 24 V -2 TA = 100 C BOFFmin TA = 170 C -3 0 5 10 15 20 25 30 V Fig. 4-2: Typ. magnetic switching points versus supply voltage BON BOFF 0 50 100 150 200 C TA, TJ VDD mT 3 -3 -50 HAL 501 Fig. 4-4: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 2 BON 1 0 BOFF -1 TA = -40 C TA = 25 C -2 TA = 100 C TA = 170 C -3 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Typ. magnetic switching points versus supply voltage Micronas 15 HAL502 4.2. HAL 502 Applications The HAL 502 is the most sensitive latching sensor of this family (see Fig. 4-5). The HAL 502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - applications with large airgap or weak magnets, - rotating speed measurement, - commutation of brushless DC motors, - CAM shaft sensors, and - magnetic encoders. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage Magnetic Features: VO - switching type: latching BHYS - high sensitivity - typical BON: 2.6 mT at room temperature VOL - typical BOFF: -2.6 mT at room temperature BOFF - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON B Fig. 4-5: Definition of magnetic switching points for the HAL 502 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 1 2.8 5 -5 -2.8 -1 4.5 5.6 7.2 25 C 1 2.6 4.5 -4.5 -2.6 -1 4.5 5.2 7 100 C 0.95 2.5 4.4 -4.4 -2.5 -0.95 4 5 6.8 0 mT 140 C 0.9 2.4 4.3 -4.3 -2.4 -0.9 3.7 4.8 6.8 0 mT 170 C 0.9 2.3 4.3 -4.3 -2.3 -0.9 3.5 4.6 6.8 0 mT 0 -1.5 0 mT 1.5 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 16 Micronas HAL502 mT 6 BON BOFF mT 6 HAL 502 BON BOFF 4 BON 2 HAL 502 BONmax 4 BONtyp 2 BONmin TA = -40 C TA = 25 C 0 VDD = 3.8 V 0 TA = 100 C VDD = 4.5 V... 24 V TA = 170 C BOFFmax -2 -2 BOFFtyp BOFF -4 -4 BOFFmin -6 0 5 10 15 20 25 30 V Fig. 4-6: Typ. magnetic switching points versus supply voltage BON BOFF 0 50 100 150 200 C TA, TJ VDD mT 6 -6 -50 HAL 502 Fig. 4-8: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 4 BON 2 TA = -40 C TA = 25 C 0 TA = 100 C TA = 170 C -2 BOFF -4 -6 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-7: Typ. magnetic switching points versus supply voltage Micronas 17 HAL503 4.3. HAL 503 Applications The HAL 503 is a latching sensor (see Fig. 4-9). The HAL 503 is the optimal sensor for applications with alternating magnetic signals such as: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifter. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: latching - medium sensitivity VOL - typical BON: 7.6 mT at room temperature BOFF - typical BOFF: -7.6 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON B Fig. 4-9: Definition of magnetic switching points for the HAL 503 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 6.4 8.4 10.8 -10.8 -8.6 -6.4 14.6 17 20.6 6 7.6 10 -10 -7.6 -6 13.6 15.2 18 100 C 4.8 7.1 9.5 -9.5 -6.9 -4.8 12.3 14 17 0.1 mT 140 C 4.4 6.7 9.2 -9.2 -6.4 -4.4 11.5 13.1 16.5 0.1 mT 170 C 4 6.4 8.9 -8.9 -6 -4 11 12.4 16 0.2 mT -40 C 25 C Min. Typ. Unit Min. Max. -0.1 -1.5 0 mT 1.5 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 18 Micronas HAL503 mT 12 mT 12 HAL 503 HAL 503 BONmax BON BOFF BON BON BOFF 8 4 8 BONtyp 4 BONmin TA = -40 C TA = 25 C 0 VDD = 3.8 V 0 TA = 100 C VDD = 4.5 V... 24 V TA = 170 C -4 -4 -8 -8 BOFFmax BOFFtyp BOFF -12 0 5 10 15 20 25 BOFFmin 30 V Fig. 4-10: Typ. magnetic switching points versus supply voltage BON BOFF 0 50 100 150 200 C TA, TJ VDD mT 12 -12 -50 HAL 503 Fig. 4-12: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 8 4 TA = -40 C TA = 25 C 0 TA = 100 C TA = 170 C -4 -8 BOFF -12 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-11: Typ. magnetic switching points versus supply voltage Micronas 19 HAL504 4.4. HAL 504 Applications The HAL 504 is a unipolar switching sensor (see Fig. 4-13). The HAL 504 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - contactless solution to replace micro switches, - position and end-point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: unipolar - medium sensitivity VOL - typical BON: 12 mT at room temperature - typical BOFF: 7 mT at room temperature 0 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF BON B Fig. 4-13: Definition of magnetic switching points for the HAL 504 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 25 C 9.5 12 14.5 5 7 9 4 5 6.5 100 C 9 11.1 14.1 4.6 6.4 8.7 3.6 4.7 6.4 8.8 mT 140 C 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 8.4 mT 170 C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 8 mT 10.2 7.2 9.5 mT 11.8 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 20 Micronas HAL504 mT 18 BON BOFF mT 18 HAL 504 16 BON BOFF 14 HAL 504 16 BONmax 14 BON 12 12 10 10 8 8 6 6 0 5 10 15 20 VDD = 3.8 V VDD = 4.5 V... 24 V 25 30 V 0 -50 0 50 100 150 200 C TA, TJ VDD Fig. 4-14: Typ. magnetic switching points versus supply voltage mT 18 BOFFmin 2 TA = 170 C 0 BOFFtyp 4 TA = 100 C 2 BOFFmax BOFF TA = -40 C TA = 25 C 4 BONtyp BONmin HAL 504 Fig. 4-16: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 16 BON BOFF 14 BON 12 10 8 6 TA = -40 C TA = 25 C 4 TA = 100 C 2 0 BOFF TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-15: Typ. magnetic switching points versus supply voltage Micronas 21 HAL505 4.5. HAL 505 Applications The HAL 505 is a latching sensor (see Fig. 4-17). The HAL 505 is the optimal sensor for applications with alternating magnetic signals such as: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifter. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: latching - low sensitivity VOL - typical BON: 13.5 mT at room temperature BOFF - typical BOFF: -13.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON B Fig. 4-17: Definition of magnetic switching points for the HAL 505 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 11.8 15 18.3 -18.3 -15 -11.8 26 30 34 11 13.5 17 -17 -13.5 -11 24 27 32 100 C 10.2 12.4 16.6 -16.6 -12.4 -10.2 22 24.8 31.3 0 mT 140 C 9.7 12 16.3 -16.3 -12 -9.7 21 24.2 31.3 0 mT 170 C 9.4 11.7 16.1 -16.1 -11.7 -9.4 20 23.4 31.3 0 mT -40 C 25 C Min. Typ. Unit Min. Max. 0 -1.5 0 mT 1.5 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 22 Micronas HAL505 mT 20 HAL 505 HAL 505 BONmax BON BON 15 BOFF mT 20 BON 15 BOFF 10 BONtyp 10 5 5 TA = -40 C TA = 25 C 0 TA = 170 C VDD = 4.5 V... 24 V -5 BOFF -10 VDD = 3.8 V 0 TA = 100 C -5 BONmin BOFFmax -10 BOFFtyp -15 -15 -20 -20 -50 BOFFmin 0 5 10 15 20 25 30 V 50 100 150 200 C TA, TJ VDD Fig. 4-18: Typ. magnetic switching points versus supply voltage mT 20 0 HAL 505 Fig. 4-20: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BON BOFF 15 10 5 TA = -40 C TA = 25 C 0 TA = 100 C TA = 170 C -5 BOFF -10 -15 -20 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-19: Typ. magnetic switching points versus supply voltage Micronas 23 HAL506 4.6. HAL 506 Applications The HAL 506 is the most sensitive unipolar switching sensor of this family (see Fig. 4-21). The HAL 506 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. In the HAL 5xx family, the HAL 516 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Output Voltage VO BHYS Magnetic Features: - switching type: unipolar VOL - high sensitivity - typical BON: 5.5 mT at room temperature 0 - typical BOFF: 3.5 mT at room temperature BOFF BON B Fig. 4-21: Definition of magnetic switching points for the HAL 506 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 25 C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 100 C 3.6 5.1 7 1.9 3.3 4.9 1.2 1.8 2.6 4.2 mT 140 C 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 4 mT 170 C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 3.8 mT 4.8 3.8 4.5 mT 6.2 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 24 Micronas HAL506 mT 8 BON BOFF mT 8 HAL 506 7 BON BON BOFF HAL 506 BONmax 7 6 6 5 5 BONtyp BOFFmax 4 4 3 3 0 TA = 170 C 0 5 10 15 20 30 V 0 -50 VDD = 4.5 V... 24 V 0 50 100 150 200 C TA, TJ VDD Fig. 4-22: Typ. magnetic switching points versus supply voltage BON BOFF VDD = 3.8 V 1 25 mT 8 BOFFmin 2 TA = 100 C 1 BOFFtyp BOFF TA = -40 C TA = 25 C 2 BONmin HAL 506 Fig. 4-24: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 7 BON 6 5 4 3 BOFF TA = -40 C 2 TA = 25 C TA = 100 C 1 0 TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-23: Typ. magnetic switching points versus supply voltage Micronas 25 HAL508 4.7. HAL 508 Applications The HAL 508 is a unipolar switching sensor (see Fig. 4-25). The HAL 508 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO In the HAL 5xx family, the HAL 518 is a sensor with the same magnetic characteristics but with an inverted output characteristic. BHYS Magnetic Features: VOL - switching type: unipolar 0 - medium sensitivity BOFF BON B Fig. 4-25: Definition of magnetic switching points for the HAL 508 - typical BON: 18 mT at room temperature - typical BOFF: 16 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 15 18 20.7 13.5 16 19 1.5 2 2.7 100 C 13.9 16.6 20.4 12.5 14.8 18.7 1.2 1.8 2.6 15.7 mT 140 C 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 15 mT 170 C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 14.4 mT -40 C 25 C Min. Typ. Unit Min. Max. 17.8 14 17 mT 20 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 26 Micronas HAL508 mT 25 HAL 508 BON BOFF 20 mT 25 HAL 508 BON BOFF 20 BON 15 BONmax BOFFmax BONtyp 15 BOFFtyp BOFF BONmin 10 BOFFmin 10 TA = -40 C TA = 25 C TA = 100 C 5 0 TA = 170 C 0 5 10 15 20 25 30 V Fig. 4-26: Typ. magnetic switching points versus supply voltage HAL 508 BON BOFF 20 0 -50 VDD = 4.5 V... 24 V 0 50 100 150 200 C TA, TJ VDD mT 25 VDD = 3.8 V 5 Fig. 4-28: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 15 BOFF 10 TA = -40 C TA = 25 C TA = 100 C 5 0 TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-27: Typ. magnetic switching points versus supply voltage Micronas 27 HAL509 4.8. HAL 509 Applications The HAL 509 is a unipolar switching sensor (see Fig. 4-29). The HAL 509 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO Magnetic Features: - switching type: unipolar BHYS - low sensitivity - typical BON: 26.8 mT at room temperature VOL - typical BOFF: 23.2 mT at room temperature 0 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF BON B Fig. 4-29: Definition of magnetic switching points for the HAL 509 - typical temperature coefficient of magnetic switching points is -300 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 25 C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 100 C 22.2 26.1 29.7 19.1 22.7 25.9 2.7 3.4 3.8 24.4 mT 140 C 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 24 mT 170 C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 23.7 mT 25.6 21.5 25 mT 28.5 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 28 Micronas HAL509 mT 35 HAL 509 mT 35 HAL 509 BONmax BON 30 BOFF BON 30 BOFF BON 25 BOFFmax BONtyp 25 BOFF 20 BOFFtyp BONmin 20 BOFFmin 15 15 TA = -40 C TA = 25 C 10 10 TA = 100 C TA = 170 C 5 0 VDD = 3.8 V 0 5 10 15 20 25 30 V Fig. 4-30: Typ. magnetic switching points versus supply voltage HAL 509 BON 30 BOFF 0 -50 0 50 100 150 200 C TA, TJ VDD mT 35 VDD = 4.5 V... 24 V 5 Fig. 4-32: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 25 BOFF 20 15 TA = -40 C TA = 25 C 10 TA = 100 C TA = 170 C 5 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-31: Typ. magnetic switching points versus supply voltage Micronas 29 HAL516 4.9. HAL 516 Applications The HAL 516 is the most sensitive unipolar switching sensor with an inverted output of this family (see Fig. 4-33). The HAL 516 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. In the HAL 5xx family, the HAL 506 is a sensor with the same magnetic characteristics but with a normal output characteristic. Output Voltage VO BHYS Magnetic Features: - switching type: unipolar inverted VOL - high sensitivity - typical BON: 3.5 mT at room temperature 0 - typical BOFF: 5.5 mT at room temperature BON BOFF B Fig. 4-33: Definition of magnetic switching points for the HAL 516 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 100 C 1.9 3.3 4.9 3.6 5.1 7 1.2 1.8 2.6 4.2 mT 140 C 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 4 mT 170 C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 3.8 mT -40 C 25 C Min. Typ. Unit Max. 4.8 3.8 4.5 mT 6.2 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 30 Micronas HAL516 mT 8 BON BOFF mT 8 HAL 516 7 BON BOFF 6 HAL 516 BOFFmax 7 6 BOFF 5 BOFFtyp 5 BONmax 4 4 BOFFmin BON 3 TA = -40 C TA = 25 C 2 TA = 170 C 0 5 10 15 20 30 V 0 -50 VDD = 4.5 V... 24 V 0 50 100 150 200 C TA, TJ VDD Fig. 4-34: Typ. magnetic switching points versus supply voltage BON BOFF VDD = 3.8 V 1 25 mT 8 BONmin 2 TA = 100 C 1 0 BONtyp 3 HAL 516 Fig. 4-36: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 7 BOFF 6 5 4 3 BON TA = -40 C 2 TA = 25 C TA = 100 C 1 0 TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-35: Typ. magnetic switching points versus supply voltage Micronas 31 HAL517 4.10. HAL 517 Applications The HAL 517 is a unipolar switching sensor with inverted output (see Fig. 4-37). The HAL 517 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage Magnetic Features: VO - switching type: unipolar inverted BHYS - medium sensitivity - typical on point is 16.2 mT at room temperature VOL - typical off point is 18.3 mT at room temperature 0 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BON BOFF B Fig. 4-37: Definition of magnetic switching points for the HAL 517 - typical temperature coefficient of magnetic switching points is -1700 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 100 C 11 14.3 18.5 12.8 16.1 20.4 1.2 1.8 2.6 15.2 mT 140 C 10 13.2 18.2 11.5 14.8 20.2 1 1.6 2.6 14 mT 170 C 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 13 mT -40 C 25 C Min. Typ. Unit Min. Max. 18.3 14 17.2 mT 20 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 32 Micronas HAL517 mT 25 HAL 517 BON BOFF 20 mT 25 HAL 517 BON BOFF 20 BOFF BOFFmax BONmax 15 BOFFtyp 15 BONtyp BON 10 BOFFmin BONmin 10 TA = -40 C TA = 25 C TA = 100 C 5 0 TA = 170 C 0 5 10 15 20 25 30 V Fig. 4-38: Typ. magnetic switching points versus supply voltage HAL 517 BON BOFF 20 0 -50 VDD = 4.5 V... 24 V 0 50 100 150 200 C TA, TJ VDD mT 25 VDD = 3.8 V 5 Fig. 4-40: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 15 BON 10 TA = -40 C TA = 25 C TA = 100 C 5 0 TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-39: Typ. magnetic switching points versus supply voltage Micronas 33 HAL518 4.11. HAL 518 Applications The HAL 518 is a unipolar switching sensor with inverted output (see Fig. 4-41). The HAL 518 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage In the HAL 5xx family, the HAL 508 is a sensor with the same magnetic characteristics but with a normal output characteristic. VO BHYS Magnetic Features: VOL - switching type: unipolar inverted - medium sensitivity 0 - typical BON: 16 mT at room temperature BON BOFF B Fig. 4-41: Definition of magnetic switching points for the HAL 518 - typical BOFF: 18 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 14 16.7 20 15.5 19 22 1.5 2.3 3 25 C 13.5 16 19 15 18 20.7 1.4 2 2.8 100 C 12.5 14.8 18.7 13.9 16.6 20.4 1 1.8 2.7 15.7 mT 140 C 11.7 14.1 18.5 13 15.8 20.2 0.9 1.7 2.7 15 mT 170 C 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 14.4 mT -40 C Min. Typ. Unit Min. Max. 17.8 14 17 mT 20 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 34 Micronas HAL518 mT 25 HAL 518 BON BOFF 20 mT 25 HAL 518 BON BOFF 20 BOFF BOFFmax BONmax 15 BOFFtyp 15 BONtyp BON BOFFmin BONmin 10 10 TA = -40 C TA = 25 C TA = 100 C 5 0 TA = 170 C 0 5 10 15 20 25 30 V Fig. 4-42: Typ. magnetic switching points versus supply voltage HAL 518 BON BOFF 20 0 -50 VDD = 4.5 V... 24 V 0 50 100 150 200 C TA, TJ VDD mT 25 VDD = 3.8 V 5 Fig. 4-44: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 15 BON 10 TA = -40 C TA = 25 C TA = 100 C 5 0 TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-43: Typ. magnetic switching points versus supply voltage Micronas 35 HAL519 4.12. HAL 519 Applications The HAL 519 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic north polarity. (see Fig. 4-45). The HAL 519 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage Magnetic Features: VO - switching type: unipolar inverted, north sensitive BHYS - high sensitivity - typical BON: -3.5 mT at room temperature VOL - typical BOFF: -5.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF BON 0 B Fig. 4-45: Definition of magnetic switching points for the HAL 519 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. -5.4 -3.8 -2.1 -7.7 -5.9 -4.3 1.6 2.1 2.8 -5 -3.6 -2 -7.2 -5.5 -3.8 1.5 1.9 2.7 100 C -4.9 -3.3 -1.9 -6.7 -5 -3.4 1.2 1.7 2.6 -4.2 mT 140 C -5.1 -3.1 -1.7 -6.8 -4.8 -3.1 1 1.7 2.6 -4 mT 170 C -5.2 -3 -1.5 -6.8 -4.6 -2.8 0.9 1.6 2.6 -3.8 mT -40 C 25 C Min. Typ. Unit Min. Max. -4.8 -6.2 -4.5 mT -3.8 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 36 Micronas HAL519 mT 0 HAL 519 TA = -40 C TA = 25 C BON -1 BOFF HAL 519 VDD = 3.8 V VDD = 4.5 V...24 V BON -1 BOFF TA = 100 C TA = 170 C -2 mT 0 BONmax -2 -3 -3 BON BONtyp -4 -4 -5 -5 BOFFmax BONmin BOFF -6 -6 -7 -7 BOFFtyp BOFFmin -8 0 5 10 15 20 25 30 V 0 50 100 150 200 C TA, TJ VDD Fig. 4-46: Typ. magnetic switching points versus supply voltage mT 0 -8 -50 HAL 519 TA = -40 C Fig. 4-48: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. TA = 25 C BON -1 BOFF TA = 100 C TA = 170 C -2 BON -3 -4 -5 -6 BOFF -7 -8 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-47: Typ. magnetic switching points versus supply voltage Micronas 37 HAL523 4.13. HAL 523 Applications The HAL 523 is the least sensitive unipolar switching sensor of this family (see Fig. 4-49). The HAL 523 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO Magnetic Features: - switching type: unipolar BHYS - low sensitivity - typical BON: 34.5 mT at room temperature VOL - typical BOFF: 24 mT at room temperature 0 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF BON B Fig. 4-49: Definition of magnetic switching points for the HAL 523 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT 25 C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT 100 C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT 140 C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT 170 C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 38 Micronas HAL523 mT 45 mT 45 HAL 523 HAL 523 BONmax BON BOFF 40 BON BOFF BON 35 30 40 30 BOFF 25 25 20 15 15 TA = 25 C TA = 100 C 10 BONmin BOFFtyp BOFFmin VDD = 3.8 V 10 TA = 170 C 5 VDD = 4.5 V...24 V 5 0 5 10 15 20 25 30 V Fig. 4-50: Typ. magnetic switching points versus supply voltage mT 45 0 -50 0 50 100 150 200 C TA, TJ VDD BON BOFF BOFFmax 20 TA = -40 C 0 BONtyp 35 HAL 523 Fig. 4-52: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 40 BON 35 30 BOFF 25 20 TA = -40 C 15 TA = 25 C TA = 100 C 10 TA = 170 C 5 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-51: Typ. magnetic switching points versus supply voltage Micronas 39 HAL5xx 5. Application Notes 5.4. EMC and ESD 5.1. Ambient Temperature For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 5-1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T Applications with this arrangement passed the EMC tests according to the product standards DIN 40839. At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Note: The international standard ISO 7637 is similar to the used product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV 220 1 RL VDD VEMC VP 1.2 k OUT 3 4.7 nF 20 pF 2 GND Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Fig. 5-1: Test circuit for EMC investigations Note: The functionality of the sensor below 3.8 V has not been tested. For special test conditions, please contact Micronas. 5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. In case of sensors with an inverted switching behavior (HAL 516 ... HAL519), the output state will be high if B > BOFF and low if B < BON. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 40 Micronas HAL5xx Micronas 41 HAL5xx 42 Micronas HAL5xx Micronas 43 HAL5xx 6. Data Sheet History 1. Final data sheet: "HAL 501...506, 508, 509, 516... 518, Hall Effect Sensor Family, Aug. 11, 1999, 6251-485-1DS. First release of the final data sheet. Major changes to the previous edition "HAL501 ... HAL506, HAL 508", Hall Effect Sensor ICs, May 5, 1997, 6251-405-1DS: - additional types: HAL509, HAL516 ... HAL518 - additional package SOT-89B - additional temperature range "K" - outline dimensions for SOT-89A and TO-92UA changed - absolute maximum ratings changed - electrical characteristics changed - magnetic characteristics for HAL 501, HAL 503, HAL 506, and HAL 509 changed 2. Final data sheet: "HAL 501...506, 508, 509, 516... 519, 523, Hall Effect Sensor Family", Feb. 14, 2001, 6251-485-2DS. Second release of the final data sheet. Major changes: - additional types: HAL519, HAL523 - phased-out package SOT-89A removed - temperature range "C" removed - outline dimensions for SOT-89B: reduced tolerances Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (02/01) Order No. 6251-485-2DS 44 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Micronas