Document Number: MC20XS4200
Rev. 6.0, 5/2018
NXP Semiconductors
Data Sheet: Advance Information
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© NXP B.V. 2018.
Dual
24 V,
20 mOhm
high-side switch
The 20XS4200 device is part of a 24 V dual high side switch product family with
integrated control, and a high number of protective and diagnostic functions. It
has been designed for truck, bus, and industrial applications. The low RDS(on)
channels (<20 mΩ) can control different load types; bulbs, solenoids, or DC
motors. Control, device configuration, and diagnostics are performed through a
16-bit serial peripheral interface (SPI), allowing easy integration into existing
applications. This device is powered by SMARTMOS technology
Both channels can be controlled individually by external/internal clock signals, or
by direct inputs. Using the internal clock allows fully autonomous device
operation. Programmable output voltage slew-rates (individually programmable)
helps improve electromagnetic compatibility (EMC) performance. To avoid
shutting off the device upon inrush current, while still being able to closely track
the load current, a dynamic overcurrent threshold profile is featured. Switching
current of each channel can be sensed with a programmable sensing ratio.
Whenever communication with the external microcontroller is lost, the device
enters a Fail-safe operation mode, but remains operational, controllable, and
protected.
Features
Two fully-protected 20 mΩ (@ 25 °C) high-side switches
Up to 4.4 A steady state current per channel
Separate bulb and DC motor latched overcurrent handling
Individually programmable internal/external PWM clock signals
Overcurrent, short-circuit, and overtemperature protection with
programmable autoretry functions
Accurate temperature and current sensing
Openload detection (channel in OFF and ON state), also for LED
applications (7.0 mA typ.)
Normal operating range: 8.0 to 36 V, extended range: 6.0 to 58 V
•3.3 V and 5.0 V compatible 16-bit SPI port for device control, configuration
and diagnostics at rates up to 8.0 MHz
Figure 1. Simplified application diagram
FK SUFFIX (PB-FREE)
98ASA00428D
23 PIN PQFN
(12 X 12 mm)
20XS4200
HIGH-SIDE SWITCH
MCU
V
DD
CLOCK
FSB
SCLK
CSB
SO
RSTB
SI
IN0
IN1
CSNS GND
VDD VPWR
HS0
HS1
LOAD
I/O
SCLK
CSB
SI
I/O
SO
I/O
I/O
A/D
GND
LOAD
M
CONF0
CONF1
FSOB
I/O
A/D SYNC
I/O
20XS4200
V
DD
V
PWR
NXP Semiconductors 2
20XS4200
Table of Contents
1 Orderable parts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Internal block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2 Static electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.3 Dynamic electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.4 Timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.2 Pin assignment and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.3 Functional internal block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6 Functional device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.1 Operation and operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.3 Logic commands and SPI registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
7 Typical applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
8 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
8.1 Soldering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
8.2 Package mechanical dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
3NXP Semiconductors
20XS4200
1 Orderable parts
Table 1. Simplified orderable part variations table
Orderable part number Version Reverse battery
voltage (V)
Negative clamp
voltage (V) Slew rate Product ID bit Loss of ground
MC20XS4200FK -28 V -24 V
Standard 01
Hardware
MC20XS4200BFK (1) B (2)
-32 V -32 V Hardware +
Software
MC20XS4200BAFK (1) BA (2), (3) Accelerated 00
Notes
1. Recommended for all new designs
2. Version B and BA devices can support negative voltage battery and ground loss down to -32V, the overcurrent profile can be selected by the SPI.
It is no longer recommended to disable the OFF state openload for the HS1 output in parallel mode, errata sheet MC24XS4ER is no longer valid.
3. Version BA devices have faster slew rates to reduce switching losses.
NXP Semiconductors 4
20XS4200
2 Internal block diagram
Figure 2. Internal block diagram
GND
Overtemperature
Detect.
Control
Severe Short-circuit
Selectable Overcurrent
Internal
Regulator
Selectable Slew Rate
Gate Driver
Over/Undervoltage
Protections
HS0
VPWRVDD
CSB
SCLK
SO
SI
RSTB
CLOCK
FSB
IN0
HS1
HS0
HS1
IN1
Detection
Output
CSNS
IDWN
IUP
OpenLoad
Detect
Detection
Temperature
Feedback
VREG
Short-circuit to
ChargeVDD Failure
Detection
Calibratable
Oscillator * PWM
Module
Drain/Gate
Clamp
RDWN
Current Sense
Analog MUX
Overtemperature
Prewarning
Pump
POR
FSOB
CONF0
CONF1
IUP
VREG
IDWN
SYNC
IDWN
VPWR detec.
Logic
*
*blocks marked in grey have been implemented
independently for each of both channels
5NXP Semiconductors
20XS4200
3 Pin assignment
Figure 3. 20XS4200 device pin assignments
The function of each pin is described in the section Functional description
Table 2. 20XS4200 pin description
Pin
number Pin name Function Formal name Definition
1CSNS Output Output Current/
Temperature Monitoring
This pin either outputs a current proportional to the channel’s output current or a
voltage proportional to the temperature of the GND pin (pin 14). Selection between
current and temperature sensing, as well as setting the current sensing sensitivity
are performed through the SPI interface. An external pull-down resistor must be
connected between CSNS and GND.
2
3
IN0
IN1 Input Direct Inputs
The IN[0 : 1] input pins are used to directly control the switching state of both switches
and consequently the voltage on the HS0 : HS1 output pins. The pins are connected
to GND by internal pull-down resistors.
4FSOB Output Fail-safe Output
(Active Low)
FSOB is asserted (active-low) upon entering Fail-safe mode (see Functional
description) This open-drain output requires an external pull-up resistor to VPWR
5
6
CONF0
CONF1 Input Configuration Input
The CONF[0 : 1] input pins are used to select the appropriate overcurrent detection
profile (bulb/DC motor) for each of both channels. CONF requires a pull-down
resistor to GND.
7FSB Output Fault Status
(Active Low)
This open-drain output pin (external pull-up resistor to VDD required) is set when the
device enters Fault mode (see Fault mode).
8CLOCK Input PWM Clock
The clock input gives the time-base when the device is operated in external clock/
internal PWM mode.
This pin has an internal pull-down current source.
9RSTB Input Reset
This input pin is used to initialize the device’s configuration - and fault registers. Reset
puts the device in Sleep mode (low current consumption) provided it is not stimulated
by direct input signals.This pin is connected to GND by an internal pull-down resistor.
10 CSB Input Chip Select
(Active Low)
This input pin is connected to the SPI chip-select output of an external micro-
controller. CSB is internally pulled up to VDD by a current source IUP.
11 SCLK Input Serial Clock This input pin is to be connected to an external SPI Clock signal. The SCLK pin is
internally connected to a pull-down current source IDWN.
Transparent top view
1
12
10
9
8
7
6
5
4
3
2
2019
15
14
13
HS0HS1
CSNS
IN1
FSOB
CONF0
CONF1
FSB
RSTB
CSB
SCLK
SI
VDD
GND
VPWR
11
23
22
21
16
17
18
CLOCK
IN0
SYNC
GND
VPWR
SO
GND
VPWR
PQFN package
NXP Semiconductors 6
20XS4200
12 SI Input Serial Input
This input pin receives the SPI input data from an external device (micro-controller or
another extreme switch device in case of daisy-chaining). The SI pin is internally
connected to a pull-down current source IDWN.
13 VDD Power Digital Drain Voltage This is the positive supply pin of the SPI interface.
16 SO Output Serial Output
This output pin transmits SPI data to an external device (external micro-controller or
the SI pin of the next SPI device in case of daisy-chaining). The pin doesn’t require
external pull-up or pull-down resistors, but a series resistor is recommended to limit
current consumption in case of GND disconnection.
14, 17, 22 GND Ground Ground These pins, internally connected, are the ground pins for the logic and analog
circuitry. It is recommended to also connect these pins on the PCB.
15,18,21 VPWR Power Positive Power Supply
These pins, internally connected, supply both the device’s power and control circuitry
(except the SPI port). The drain of both internal MOSFET switches is connected to
them. Pin 15 is the device’s primary thermal pad.
19
20
HS1
HS0 Output Power Switch Outputs Output pins of the switches, to be connected to the load.
23 SYNC Output
Output Current
Monitoring
Synchronization
This output pin is asserted (active low) when the Current Sense (CS) output signal is
within the specified accuracy range. Reading the SYNC pin allows the external
micro-processor to synchronize to the device when operating in autonomous
operating mode. SYNC is open-drain and requires a pull-up resistor to VDD.
Table 2. 20XS4200 pin description (continued)
Pin
number Pin name Function Formal name Definition
7NXP Semiconductors
20XS4200
4 Electrical characteristics
4.1 Maximum ratings
Table 3. Maximum ratings
All voltages are relative to ground unless mentioned otherwise. Exceeding these ratings may cause permanent damage.
Parameter Symbol Maximum ratings Unit
Electrical ratings
VPWR supply voltage range
Load dump at 25 °C (350 ms)
Reverse battery at 25 °C
20XS4200FK
20XS4200BFK, and 20XS4200BAFK
Fast negative transient pulses (ISO 7637-2 pulse #1, VPWR=28 V & Ri=10 Ω)
VPWR
58
-28
-32
-60
V
VDD supply voltage range VDD -0.3 to 5.5 V
Voltage on input pins (4) (except IN[0:1]) and Output pins (5)) (except HS[0:1]) VMAX,LOGIC(4) -0.3 to 5.5 V
Voltage on Fail-safe output (FSOB) VFSO -0.3 to 58 V
Voltage on SO pin VSO -0.3 to VDD+0.3 V
Voltage (continuous, max. allowable) on IN[0:1] inputs VIN,MAX 58 V
Voltage (continuous, max. allowable) on output pins (HS [0:1])
20XS4200FK
20XS4200BFK, and 20XS4200BAFK
VHS[0:1] -28 to 58
-32 to 58
V
Rated continuous output current per channel (6) IHS[0:1] 4.4 A
Maximum allowable energy dissipation per channel and two parallel channels, single-
pulse method (7) ECL [0:1]_SING 70 mJ
Notes:
4. Concerned Input pins are: CONF[0:1], RSTB, SI, SCLK, Clock, and CSB.
5. Concerned Output pins are: CSNS, SYNC, and FSB.
6. Output current rating valid as long as maximum junction temperature is not exceeded. For computation of the maximum allowable output current,
the thermal resistance of the package & the underlying heatsink must be taken into account
7. Single pulse Energy dissipation, Single-pulse short-circuit method (LL = 0.5 mH, R = 48 mΩ VPWR = 28 V, TJ = 150 °C initial).
NXP Semiconductors 8
20XS4200
Electrical ratings (continued)
ESD Voltage(8)
Human Body Model (HBM) for HS[0:1], VPWR and GND
Human Body Model (HBM) for other pins
Charge Device Model (CDM)
Package corner pins
All other pins
VESD1
VESD2
VESD3
VESD4
± 8000
± 2000
± 750
± 500
V
Thermal ratings
Operating temperature
•Ambient
•Junction
TA
TJ
- 40 to 125
- 40 to 150
°C
Storage temperature TSTG - 55 to 150 °C
Thermal Resistance Junction to Case Bottom / VPWR Flag Surface RθJC 0.32 °C/ W
Peak package reflow temperature during reflow(9),(10) TPPRT Note 10 °C
Notes:
8. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω), and the Charge Device Model
(CDM), Robotic (CZAP = 4.0 pF).
9. Pin soldering temperature limit is for 40 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause
malfunction or permanent damage to the device.
10. NXP’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020. For Peak Package Reflow Temperature and
Moisture Sensitivity Levels (MSL), go to www.nxp.com, search by part number (remove prefixes/suffixes), and the core ID to view all orderable
parts, and review parametrics.
Table 3. Maximum ratings (continued)
All voltages are relative to ground unless mentioned otherwise. Exceeding these ratings may cause permanent damage.
Parameter Symbol Maximum ratings Unit
9NXP Semiconductors
20XS4200
4.2 Static electrical characteristics
Table 4. Static electrical characteristics
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
Supply electrical characteristics
Supply voltage range:
Full specification compliant
Extended mode(11)
VPWR 8.0
6.0
24
36
58 V
VPWR supply current, device in wake-up mode, channel on, openload
Outputs in ON state, HS[0 : 1] open, IN[0:1] > VIH
IPWR(ON) 6.5 8.0 mA
VPWR supply current, device in wake-up mode (Standby), channel Off
openload in OFF state detection disabled, HS[0 : 1] shorted to ground with
VDD = 5.5 V and RSTB > VWAKE
MC20XS4200FK
MC20XS4200BAFK
IPWR(SBY)
6.5
6.5
8.0
8.5
mA
Sleep state supply current
VPWR = 24 V, RSTB = IN[0:1] < VWAKE, HS[0 : 1] connected to ground
•T
A = 25 °C
•T
A = 125 °C
IPWR(SLEEP)
3.0
10.0
60.0
μA
VDD supply voltage VDD(ON) 3.0 5.5 V
VDD supply current at VDD = 5.5 V
No SPI communication
•8.0 MHz SPI communication(12)
IDD(ON)
5.0
2.2
mA
VDD sleep state current at VDD = 5.5 V with or without VPWR IDD(SLEEP) 5.0 μA
Overvoltage shutdown threshold VPWR(OV) 39 42 45.5 V
Overvoltage shutdown hysteresis VPWR(OVHYS) 0.2 0.8 1.5 V
Undervoltage shutdown threshold(13) VPWR(UV) 5.0 6.0 V
VPWR power-on reset (POR) voltage threshold(13) VPWR(POR) 2.2 2.6 4.0 V
VDD power-on reset (POR) voltage threshold(13) VDD(POR) 1.5 2.0 2.5 V
VDD supply failure voltage threshold (assumed VPWR > VPWR(UV)) VDD(FAIL) 2.2 2.5 2.8 V
Notes
11. In extended mode, availability of several device functions (channel control, value of RDS(ON), overtemperature protection) is guaranteed, but
compliance with the specified values in this document is not. Below 6.0 V, the device is only protected from overheating (thermal shutdown).
Above VPWR(OV), the channels can only be turned ON when the overvoltage detection function has been disabled.
12. Typical value guaranteed per design.
13. When the device recovers from undervoltage and returns to normal mode (6.0 V < VPWR < 58 V) before the end of the auto-retry period (see Auto-
retry), the device performs normally. When VPWR drops below VPWR(UV), undervoltage is detected (see Undervoltage fault (Latchable fault) and
EMC Performances).
NXP Semiconductors 10
20XS4200
Electrical characteristics of the output stage (HS0 and HS1)
ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C) CSNS_ratio = 0
•V
PWR = 8.0 V
•V
PWR = 28 V
•V
PWR = 36 V
RDS(ON)25
20
20
20
mΩ
ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C) CSNS_ratio = 0
•V
PWR = 8.0 V
•V
PWR = 28 V
•V
PWR = 36 V
RDS(ON)150
36
36
36
mΩ
ON-Resistance, Drain-to-Source difference from one channel to the other in
parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X ΔRDS(ON)150 -0.9 +0.9 mΩ
ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C,
VPWR = -24 V) RSD(ON)150 36 mΩ
Max. detectable wiring length (2.5 mm²) for severe short-circuit detection (see
Severe short-circuit fault (Latchable fault)):
20XS4200FK and 20XS4200BFK
High slew rate selected
Medium slew rate selected
Low slew rate selected
20XS4200BAFK
High slew rate selected
Medium slew rate selected
Low slew rate selected
LSHORT
50
100
200
30
55
110
130
260
500
100
175
365
300
600
1200
180
300
620
cm
Overcurrent detection thresholds with CSNS_ratio bit = 0 (CSR0)
I_OCH1_0
I_OCH2_0
I_OCM1_0
I_OCM2_0
I_OCL1_0
I_OCL2_0
I_OCL3_0
27.5
17.5
10.8
6.7
4.5
3.0
1.5
33.0
21.0
13.0
8.0
5.4
3.6
1.8
38.5
24.5
15.2
9.3
6.3
4.2
2.1
A
Overcurrent detection thresholds with CSNS_ratio bit = 1(CSR1)
I_OCH1_1
I_OCH2_1
I_OCM1_1
I_OCM2_1
I_OCL1_1
I_OCL2_1
I_OCL3_1
9.2
5.8
3.6
2.2
1.5
1.0
0.48
11.0
7.0
4.3
2.7
1.8
1.2
0.6
12.8
8.2
5.1
3.1
2.1
1.4
0.72
A
Table 4. Static electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
11 NXP Semiconductors
20XS4200
Electrical characteristics of the output stage (HS0 and HS1) (continued)
Output (HS[x]) leakage current in sleep state (positive value = outgoing)
20XS4200FK
•V
HS,OFF = 0 V (VHS,OFF = output voltage in OFF state)
•V
HS,OFF = VPWR, device in sleep state (VPWR = 24 V)
20XS4200BFK and 20XS4200BAFK
•V
HS,OFF = 0 V (VHS,OFF = output voltage in OFF state)
•V
HS,OFF = VPWR, device in sleep state (VPWR = 24 V)
•V
HS,OFF = VPWR, device in sleep state (VPWR = 36 V)
IOUT_LEAK
-40.0
-120
-1400
+16
+5.0
+16
+5.0
+5.0
µA
Output biasing current in OFF state (positive value = outgoing)
20XS4200BFK
with OL_OFF disabled (worst case for VPWR = 36 V, VHS,OFF = 34 V)
Fast slew rate selected
Medium slew rate selected
Slow slew rate selected
With OL_OFF disabled and ECU ground disconnected (VPWR = 32 V)
20XS4200BAFK
with OL_OFF disabled (worst case for VPWR = 36 V, VHS,OFF = 34 V)
Fast slew rate selected
Medium slew rate selected
Slow slew rate selected
IOUT_OFF
-500
-370
-300
0
-620
-440
-330
-400
-300
-250
-
-495
-360
-280
-300
-230
-200
1000
-380
-280
-230
µA
Switch turn-on threshold for supply overvoltage (VPWR -GND) VD_GND(CLAMP) 58 66 V
Switch turn-on threshold for Drain-Source overvoltage (measured at
IOUT = 500 mA VDS(CLAMP) 58 66 V
Switch turn-on threshold for Drain-Source overvoltage difference from one
channel to the other in parallel mode (@ IHS = 500 mA) ΔVDS(CLAMP) -2.0 +2.0 V
Current sensing ratio(14)
CSNS_ratio bit = 0 (high current mode)
CSNS_ratio bit = 1 (low current mode)
CSR0
CSR1
1/1500
1/500
Minimum measurable load current with compensated error(15) I_LOAD_MIN 50 mA
CSNS leakage current in OFF state (CSNSx_en = 0, CSNS_ratio bit_x = 0) ICSR_LEAK -4.0 +4.0 µA
Systematic offset error (see Current sense errors)
20XS4200FK
20XS4200BFK and 20XS4200BAFK
I_LOAD_ERR_SYS
5.5
-5
mA
Random offset error I_LOAD_ERR_RAND -125 125 mA
Notes:
14. Current Sense Ratio CSRx = ICSNS / (IHS[x] +I_LOAD_ERR_SYS)
15. See note (14), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and use of offset compensation). Further
accuracy improvements can be obtained by performing a 1 or 2 point calibration.
Table 4. Static electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
NXP Semiconductors 12
20XS4200
Electrical characteristics of the output stage (HS0 and HS1) (continued)
ESR0 output current sensing error (%, uncompensated(16) at output current
level (sense ratio CSR0 selected):
TJ=-40 °C
•3.0 A
•1.5 A
•0.75 A
0.375 A
TJ=125 °C
•3.0 A
•1.5 A
•0.75 A
0.375 A
TJ=25 to 125 °C
•3.0 A
•1.5 A
•0.75 A
0.375 A
ESR0_ERR
-13
-12
-17
-31
-10
-9.0
-12
-19
-10
-9.0
-12
-22
13
12
17
31
10
9.0
12
19
10
9.0
12
22
%
ESR0 output current sensing error (% after offset compensation(16) at output
current level (sense ratio CSR0 selected):
TJ=-40 °C
•3.0 A
•1.5 A
•0.75 A
0.375 A
TJ=125 °C
•3.0 A
•1.5 A
•0.75 A
0.375 A
TJ=25 to 125 °C
•3.0 A
•1.5 A
•0.75 A
0.375 A
ESR0_ERR(Comp)
-10
-10
-10
-10
-9.0
-8.0
-8.0
-9.0
-9.0
-8.0
-8.0
-9.0
10
10
10
10
9.0
8.0
8.0
9.0
9.0
8.0
8.0
9.0
%
Notes:
16. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see section
Current sense error model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS
Table 4. Static electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
13 NXP Semiconductors
20XS4200
Electrical characteristics of the output stage (HS0 and HS1) (continued)
ESR1 output current sensing error (%, uncompensated (17) at output current
level (sense ratio CSR1 selected):
TJ=-40 °C
•0.75 A
TJ=125 °C
•0.75 A
TJ=25 to 125 °C
•0.75 A
ESR1_ERR
-15
-12
-12
15
12
12
%
ESR1 output current sensing error (% after offset compensation(18) at output
current level (sense ratio CSR1 selected):
TJ=-40 °C
•0.75 A
•0.25 A
0.125 A
0.075 A
TJ=125 °C
•0.75 A
•0.25 A
0.125 A
0.075 A
TJ=25 to 125 °C
•0.75 A
•0.25 A
0.125 A
0.075 A
ESR1_ERR(Comp)
-10
-11
-18
-29
-8.0
-10
-12
-16
-8.0
-10
-13
-21
10
11
18
29
8.0
10
12
16
8.0
10
13
21
%
ESR0 output current sensing error in parallel mode (%, uncompensated(19)) at
outputs current level (Sense ratio CSR0 selected):
TJ=-40 °C
•6.0 A
•3.0 A
TJ=125 °C
•6.0 A
•3.0 A
TJ=25 to 125 °C
•6.0 A
•3.0 A
ESR0_ERR_PAR
-10
-11
-8.0
-8.0
-8.0
-8.0
10
11
8.0
8.0
8.0
8.0
%
Notes:
17. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see section
Current sense error model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS
18. See note (20), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and use of offset compensation). Further
accuracy improvements can be obtained by performing a 1 or 2 point calibration
19. Minimum required value of openload impedance for detection of openload in OFF state: 200 kΩ.(VOLD(THRES) = VHS @ IOLD(OFF))
Table 4. Static electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
NXP Semiconductors 14
20XS4200
Electrical characteristics of the output stage (HS0 and HS1) (continued)
Current sense clamping voltage (condition: R(CSNS) > 10 kOhm) VCL(CSNS) 5.5 7.5 V
Openload detection current threshold in OFF state (20) IOLD(OFF) 30 100 μA
Openload fault detection voltage threshold (20) VOLD(THRES) 4.0 5.5 V
Openload detection current threshold in ON state (see Openload detection in
ON state (OL_ON)):
CSNS_ratio bit = 0
20XS4200FK
20XS4200BFK and 20XS4200BAFK
CSNS_ratio bit = 1 (fast slew rate SR[1:0] = 10 mandatory for this
function)
IOLD(ON) 60
40
5.0
150
150
7.0
300
300
10
mA
Time period of the periodically activated openload in ON state detection for
CSNS_ratio bit = 1 tOLLED 105 150 195 ms
Output shorted-to-VPWR detection voltage threshold (channel in OFF state) VOSD(THRES) VPWR-1.2 VPWR-0.8 VPWR-0.4 V
Switch turn-on threshold for negative output voltages (protects against negative
transients) - (measured at IOUT = 100 mA, Channel in OFF state)
20XS4200FK
20XS4200BFK and 20XS4200BAFK
VCL -35
-38
-24
-32
V
Switch turn-on threshold for Negative Output Voltages difference from one
channel to the other in parallel mode - (measured at IOUT = 100 mA, channel in
OFF state)
ΔVCL -2.0 +2.0 V
Switching state (ON/OFF) discrimination thresholds VHS_TH 0.45*VPWR 0.5*VPWR 0.55*VPWR V
Shutdown temperature (Power MOSFET junction; 6.0 V < VPWR < 58 V) TSD 160 175 190 °C
Notes:
20. Minimum required value of openload impedance for detection of openload in OFF state: 200 kΩ.(VOLD(THRES) = VHS @ IOLD(OFF))
Table 4. Static electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
15 NXP Semiconductors
20XS4200
Electrical characteristics of the control interface pins
Logic input voltage, High(21) VIH 2.0 5.5 V
Logic input voltage, Low(21) VIL -0.3 0.8 V
Wake-up threshold voltage (IN[0:1] and RSTB)(22) VWAKE 1.0 2.2 V
Internal pull-down current source (on Inputs: CLOCK, SCLK and SI)(23) IDWN 5.0 20 μA
Internal pull-up current source (input CSB)(24) IUP_CSB 5.0 20 μA
Internal pull-up current source (input CONF[0:1])(25) IUP_CONF 25 100 μA
Capacitance of SO, FSB and FSOB pins in Tri-state CSO 20 pF
Internal pull-down resistance (RSTB and IN[0:1]) RDWN 125 250 500 kΩ
Input capacitance(26) CIN 4.0 12 pF
SO high state output voltage
•(I
OH = 1.0 mA) VSOH VDD-0.4 V
SYNC, SO, FSOB and FSB low state output voltage
•(I
OL = -1.0 mA) VSOL 0.4 V
SYNC, SO, CSNS, FSOB and FSB tri-state leakage current:
•(0.0 V < V(SO) < VDD, or V(FS) or V(SYNC) = 5.5 V, or V(FSO) = 36 V or
V(CSNS) = 0.0 V
ISO(LEAK) - 2.0 0.0 2.0 μA
CONF[0:1]: required values of the external pull-down resistor
Lighting applications
DC motor applications
RCONF 1.0
50
10
Infinite
kΩ
Notes
21. High and low voltage ranges apply to SI, CSB, SCLK, RSTB, IN[0:1] and CLOCK input signals. The IN[0:1] signals may be derived from VPWR
and can tolerate voltages up to 58 V.
22. Voltage above which the device wakes up
23. Valid for VSI > 0.8 V and VSCLK > 0.8 V and VCLOCK > 0.8 V.
24. Valid for VCSB < 2.0 V. CSB has an internal pull-up current source derived from VDD
25. Pins CONF[0:1] are connected to an internal current source, derived from an internal voltage regulator (VREG ~ 3.0 V).
26. Input capacitance of SI, CSB, SCLK, RSTB, IN[0:1], CONF[0:1], and CLOCK pins. This parameter is guaranteed by the manufacturing process
but is not tested in production.
Table 4. Static electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
NXP Semiconductors 16
20XS4200
4.3 Dynamic electrical characteristics
Table 5. Dynamic electrical characteristics
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
Output voltage switching characteristics
Rising and falling edges medium slew rate (SR[1:0] = 00)(27)
20XS4200FK and 20XS4200BFK
•V
PWR = 16 V
•V
PWR = 28 V
•V
PWR = 36 V
20XS4200BAFK
•V
PWR = 16 V
•V
PWR = 28 V
•V
PWR = 36 V
SRR_00
SRF_00
0.164
0.28
0.34
0.25
0.45
0.5
0.65
0.79
0.90
1.1
1.4
1.5
V/μs
Rising and falling edges low slew rate (SR[1:0] = 01)(27)
20XS4200FK and 20XS4200BFK
•V
PWR = 16 V
•V
PWR = 28 V
•V
PWR = 36 V
20XS4200BAFK
•V
PWR = 16 V
•V
PWR = 28 V
•V
PWR = 36 V
SRR_01
SRF_01
0.081
0.14
0.17
0.125
0.225
0.25
0.32
0.395
0.45
0.55
0.7
0.75
V/μs
Rising and falling edges high slew rate / SR[1:0] = 10)(27)
20XS4200FK and 20XS4200BFK
•V
PWR = 16 V
•V
PWR = 28 V
•V
PWR = 36 V
20XS4200BAFK
•V
PWR = 16 V
•V
PWR = 28 V
•V
PWR = 36 V
SRR_10
SRF_10
0.29
0.55
0.68
0.5
0.9
1.0
1.30
1.58
1.80
2.2
2.8
3.0
V/μs
Notes
27. Rising and Falling edge slew rates specified for a 20 % to 80 % voltage variation on a 10.0 Ω resistive load (see Output voltage slew rate and
delay).
17 NXP Semiconductors
20XS4200
Output voltage switching characteristics (continued)
Rising/falling edge slew rate matching (SRR /SRF)
16 V < VPWR < 36 V
20XS4200FK
20XS4200BFK and 20XS4200BAFK
Δ SR 0.75
0.75
1.0
1.0
1.2
1.25
Edge slew rate difference from one channel to the other in parallel mode(28)
20XS4200FK and 20XS4200BFK
16 V < VPWR < 36 V
SR[1:0] = 00
SR[1:0] = 01
SR[1:0] = 10
20XS4200BAFK
16 V < VPWR < 36 V
SR[1:0] = 10
ΔSR
-0.1
-0.06
-0.14
-0.2
0.0
0.0
0.0
0.0
+0.1
+0.06
+0.14
+0.2
V/μs
Output turn-on and turn-off delays (medium slew rate: SR[1:0] = 00)(29)
•16 V < VPWR < 36 V
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
DLY_00 32
20
128
120
μs
Output turn-on and turn-off delays (low slew rate / SR[1:0] = 01)(29)
•16 V < VPWR < 36 V
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
DLY_01 59
40
245
240
μs
Output turn-on and turn-off delays (high slew rate / SR[1:0] = 10)(29)
•16 V < VPWR < 36 V
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
DLY_10 18
10
68
60
μs
Turn-on and turn-off delay time matching (t
DLY(ON) - t
DLY(OFF))
•f
PWM = 400 Hz, 16 V < VPWR < 36 V, duty cycle on IN[x] = 50 %, SR[1:0] = 00 Δ t
RF_00 -25 0.0 25 μs
Turn-on and turn-off delay time matching (t
DLY(ON) - t
DLY(OFF))
•f
PWM = 200 Hz, 16 V < VPWR < 36 V, duty cycle on IN[x] = 50 %, SR[1:0] = 01
20XS4200FK and 20XS4200BAFK
20XS4200BFK
Δ t
RF_01
-50
-90
0.0
50
90
μs
Notes
28. Rising and falling edge slew rates specified for a 20% to 80% voltage variation on a 10.0 Ω resistive load (see Output voltage slew rate and
delay).
29. Turn-on delay time measured as delay between a rising edge of the channel control signal (IN[0 : 1] = 1) and the associated rising edge of the
output voltage up to: VHS[0 : 1] = VPWR / 2 (where RL = 10.0 Ω). Turn-OFF delay time is measured as time between a falling edge of the channel
control signal (IN[0 : 1] = 0) and the associated falling edge of the output voltage up to the instant at which:
VHS[0 : 1] = VPWR / 2 (RL = 10.0 Ω)
Table 5. Dynamic electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
NXP Semiconductors 18
20XS4200
Output voltage switching characteristics (continued)
Turn-on and turn-off delay time matching (t
DLY(ON) - t
DLY(OFF))
•f
PWM = 1.0 kHz, 16 V < VPWR < 36 V, duty cycle on IN[x] = 50 %, SR[1:0] = 10 Δ t
RF_10
-13 0.0 13
μs
Delay time difference from one channel to the other in parallel mode(30)
16 V < VPWR < 36 V
SR[1:0] = 00
20XS4200FK
20XS4200BFK and 20XS4200BAFK
SR[1:0] = 01
20XS4200FK
20XS4200BFK and 20XS4200BAFK
SR[1:0] = 10
20XS4200FK
20XS4200BFK and 20XS4200BAFK
Δ t(DLY)
-21
-25
-40
-50
-11
-12
0.0
0.0
0.0
0.0
0.0
0.0
21
25
40
50
11
12
μs
Fault detection delay time(31) tFAULT 5.0 8.0 μs
Output shutdown delay time(32) tDETECT 10.0 15.0 μs
Current sense output settling Time for SR[1:0] = 00 (medium slew rate) (33)
16 V < VPWR < 36 V
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
CSNSVAL_00 0.0
0.0
118
235
200
μs
Current sense output settling Time for SR[1:0] = 01(low slew rate) (33)
16 V < VPWR < 36 V
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
CSNSVAL_01 0.0
0.0
185
355
315
μs
Current sense output settling Time for SR[1:0] = 10 (high slew rate) (33)
16 V < VPWR < 36 V
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
CSNSVAL_10 0.0
0.0
108
205
165
μs
SYNC output signal delay for SR[1:0] = 00 (medium SR) (33)
20XS4200FK
20XS4200BFK
20XS4200BAFK
t
SYNCVAL_00
50
50
25
150
160
130
μs
Notes
30. Rising and Falling edge slew rates specified for a 20% to 80% voltage variation on a 10.0 Ω resistive load (see Output voltage slew rate and
delay).
31. Time required to detect and report the fault to the FSB pin.
32. Time required to switch off the channel after detection of overtemperature (OT), overcurrent (OC), SC or UV error (time measured between start
of the negative edge on the FSB pin and the falling edge on the output voltage until V(HS[0:1)) = 50% of VPWR
33. Settling time ( = t
CSNSVAL_XX), SYNC output signal delay ( = t
SYNCVAL_XX) and Read-out delay ( = t
SYNREAD_XX) are defined for a stepped load
current (100 mA< I(LOAD)<IOCLX A FOR CSNS_RATIO_S = 1, AND 300 mA< I(LOAD)<IOCLX A_0 FOR CSNS_RATIO_S = 0). See Figure 9 and
Output current monitoring (CSNS).
Table 5. Dynamic electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
19 NXP Semiconductors
20XS4200
Output voltage switching characteristics (continued)
SYNC output signal delay for SR[1:0] = 01 (low SR) (34)
20XS4200FK
20XS4200BFK
20XS4200BAFK
t
SYNCVAL_01
80
80
50
290
320
250
μs
SYNC output signal delay for SR[1:0] = 10 (high SR) (34)
20XS4200FK
20XS4200BFK
20XS4200BAFK
t
SYNCVAL_10
24
22
10
80
80
65
μs
Recommended sync_to_read delay SR[1:0] = 00 (medium slew rate) (34)
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
SYNREAD_00 0.0
0.0
200
150
µs
Recommended sync_to_read delay SR[1:0] = 01 (low slew rate) (34)
20XS4200FK and 20XS4200FK
20XS4200BAFK
t
SYNREAD_01 0.0
0.0
200
150
µs
Recommended sync_to_read delay SR[1:0] = 10 (high slew rate) (34)
20XS4200FK and 20XS4200BFK
20XS4200BAFK
t
SYNREAD_10 0.0
0.0
200
150
µs
Upper overcurrent threshold duration tOCH1
tOCH2
6.0
12.0
8.6
17.2
11.2
22.4 ms
Medium overcurrent threshold duration (CONF = 0; Lighting Profile) tOCM1_L
tOCM2_L
48
96
67
137
87
178 ms
Medium overcurrent threshold duration (CONF = 1; DC motor Profile) tOCM1_M
tOCM2_M
48
96
67
137
87
178 ms
Frequency and PWM duty cycle ranges (35)(protections fully operational, see Protective functions)
Switching frequency range - direct Inputs fCONTROL 0.0 1000 Hz
Switching frequency range - external clock with internal PWM (recommended) fPWM_EXT 20 1000 Hz
Switching frequency range - internal clock with internal PWM (recommended) fPWM_INT 60 1000 Hz
Duty cycle range RCONTROL 0.0 100 %
Notes
34. Settling time ( = t
CSNSVAL_XX), SYNC output signal delay ( = t
SYNCVAL_XX) and Read-out delay ( = t
SYNREAD_XX) are defined for a stepped load
current (100 mA< I(LOAD)<IOCLX A FOR CSNS_RATIO_S = 1, AND 300 mA< I(LOAD)<IOCLX A_0 FOR CSNS_RATIO_S = 0) See Figure 9 and
Output current monitoring (CSNS).
35. In Direct Input mode, the lower frequency limit is 0 Hz with RSTB=5.0 V and 4.0 Hz with RSTB=0.0 V. Duty-cycle applies to instants at which
VHS = 50 % VPWR. For low duty-cycle values, the effective value also depends on the value of the selected slew rate.
Table 5. Dynamic electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
NXP Semiconductors 20
20XS4200
Availability diagnostic functions for CSR0 over duty cycle and switching frequency
(protections & diagnostics both fully operational, see Diagnostic features for the exact boundary values)
Available duty cycle range, fPWM = 1.0 kHz high slew rate, PWM mode(36)
•OL_OFF
•OL_ON
•OS
RPWM_1K_H
0.0
35
0.0
62
100
90
%
Available duty cycle range, fPWM = 400 Hz, medium slew rate, PWM mode(36)
•OL_OFF
•OL_ON
•OS
RPWM_400_M
0.0
21
0.0
81
100
88
%
Available duty cycle range, fPWM = 400 Hz, high slew rate, PWM mode(36)
•OL_OFF
•OL_ON
•OS
RPWM_400_H
0.0
14
0.0
84
100
95
%
Available duty cycle range, fPWM = 200 Hz, low slew rate mode, PWM mode(36)
•OL_OFF
•OL_ON
•OS
RPWM_200_L
0.0
15
0.0
86
100
93
%
Available duty cycle range, fPWM = 200 Hz, medium slew rate, PWM mode(36)
•OL_OFF
•OL_ON
•OS
RPWM_200_M
0.0
11
0.0
90
100
94
%
Available duty cycle range, fPWM = 100 Hz in low slew rate, PWM mode(36)
•OL_OFF
•OL_ON
•OS
RPWM_100_L
0.0
8.0
0.0
93
100
96
%
Deviation of the internal clock PWM frequency after calibration(37) AFPWM(CAL) -10 +10 %
Default output frequency when using an uncalibrated oscillator fPWM(0) 280 400 520 Hz
Minimal required low time during calibration of the internal clock through CSB t
CSB(MIN) 1.0 1.5 2.0 μs
Maximal allowed low time during calibration of the internal clock through CSB t
CSB(MAX) 70 100 130 μs
Recommended external clock frequency range (external clock/PWM module) fCLOCK 15 512 kHz
Upper detection threshold for external clock frequency monitoring f
CLOCK(MAX) 512 730 930 kHz
Lower detection threshold for external clock frequency monitoring f
CLOCK(MIN) 5.0 7.0 10 kHz
Notes
36. The device can be operated outside the specified duty cycle and frequency ranges (basic protective functions OC, SC, UV, OV, OT remain active)
but the availability of the diagnostic functions OL_ON, OL_OFF, OS is affected.
37. Values guaranteed from 60 Hz to 1.0 kHz (recommended switching frequency range for internal clock operation).
Table 5. Dynamic electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
21 NXP Semiconductors
20XS4200
Timing: SPI Port, IN[0]/ IN[1] Signals and Autoretry
Required low time allowing delatching or triggering sleep mode (direct input mode) tIN 175 250 325 ms
Watchdog timeout for entering Fail-safe mode due to loss of SPI contact(38) t
WDTO 217 310 400 ms
Auto-retry repetition period (when activated):
Auto_period bits = 00
Auto_period bits = 01
Auto_period bits = 10
Auto_period bits = 11
tAUTO_00
tAUTO_01
tAUTO_10
tAUTO_11
105
52.5
26.2
13.1
150
75
37.5
17.7
195
97.5
47.8
24.4
ms
GND pin temperature sensing function
Thermal prewarning detection threshold(39) TOTWAR 110 125 140 °C
Temperature sensing output voltage @ TA = 25 °C (470 Ω < RCSNS < 10 kΩ) TFEED 918 1078 1238 mV
Gain temperature sensing output @ TA = 25 °C (470 Ω < RCSNS < 10 kΩ)(39) DTFEED 10.7 11.1 11.5 mV/°C
Temperature sensing error, range [-40 °C, 150 °C], default(39) TFEED_ERROR -15 +15 °C
Temperature sensing error, [-40 °C, 150 °C] after 1 point calibration @ 25 °C(39) TFEED_ERROR
_CAL
-5.0 +5.0 °C
Notes
38. Only when the WD_dis bit set to logic [0] (default). Watchdog timeout defined from the rising edge on RST to rising edge HS[0,1]
39. Values were obtained by lab. characterization
Table 5. Dynamic electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
NXP Semiconductors 22
20XS4200
SPI Interface Electrical Characteristics(40)
Maximum operating frequency of the Serial Peripheral interface (SPI)(41) f
SPI 8.0 MHz
Required low state duration for reset RSTB (42) t
WRSTB 10 μs
Required duration from the rising to the falling edge of CSB (required setup time)(43) t
CSB 1.0 μs
Rising edge of RSTB to falling edge of CSB (required setup time)(43) t
ENBL 5.0 μs
Falling edge of CSB to rising edge of SCLK (required setup time)(43) t
LEAD 500 ns
Falling edge of SCLK to rising edge of CSB (required setup lag time)(43) t
LAG 60 ns
Required high state duration of SCLK (required setup time)(43) t
WSCLKh 50 ns
Required low state duration of SCLK (required setup time)(43) t
WSCLKl 50 ns
SI to falling edge of SCLK (required setup time)(44) t
SI (SU) 15 ns
Falling edge of SCLK to SI (required hold time of the SI signal)(44) t
SI (H) 30 ns
SO rise time
•C
L = 80 pF t
RSO 20 ns
SO fall time
•C
L = 80 pF t
FSO 20 ns
SI, CSB, SCLK, max. rise time allowing operation at fSPI = 8.0 MHz(44) t
RSI 11 ns
SI, CSB, SCLK, max. fall time allowing operation at fSPI = 8.0 MHz(44) t
FSI 11 ns
Time from rising edge of SCLK to reach a valid level at the SO pin(45) tVALID 44 ns
Time from falling edge of CSB to reach low-impedance on SO (access time)(46) t
SOEN 30 ns
Notes:
40. Parameters guaranteed by design. It is recommended to tie unused SPI-pins to GND by resistors 1.0 k <R <10 k
41. For clock frequencies > 4.0 MHz, series resistors on the SPI pins should preferably be removed. Otherwise, 470 pF (VMAX. > 40 V) ceramic
speed-up capacitors in parallel with the >8.0 kΩ input resistors are required on pins SCLK, SI, SO, CS
42. RSTB low duration is defined as the minimum time required to switch off the channel when previously put ON in SPI mode (direct inputs inactive).
43. Minimum setup time required for the device is the minimum required time that the microcontroller must wait or remain in a given state.
44. Rise and Fall time of incoming SI, CSB, and SCLK signals.
45. Time required for output data to be available for use at SO, measured with a 1.0 kΩ series resistor connected CSB.
46. Time required for output data to be terminated at SO measured with a 1.0 kΩ series resistor connected CSB.
Table 5. Dynamic electrical characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 °C TA 125 °C, GND = 0 V. Typical values are average
values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter Symbol Min. Typ. Max. Unit
23 NXP Semiconductors
20XS4200
4.4 Timing diagrams
Figure 4. Output voltage slew rate and delay
Figure 5. Overcurrent protection profile for bulb applications
VPWR
VHS[0:1]
tDLY_XX tDLY_XX
Low Logic Level
80% VPWR
20% VPWR
SRF
SRR
50%VPWR
RPWM range defined for 50% of VPWR
CSB
High Logic Level
VHS[0:1]
Time
Time
Time
Low Logic Level
IN[0:1]
High Logic Level
Time
or
(tDLY(ON))(tDLY(OFF))
IOCH1
t
OCM2_L
t
OCM1_L
t
OCH1
Time
Load
Current
IOCH2
IOCM1
IOCL1
IOCL2
IOCM2
t
OCH2
Bulb profile: CONFs = 0 (V (pin 5/6) <0.8 V).
Static overcurrent protection profile activated once per turn-on.
Default levels shown as solid lines
IOCL3
NXP Semiconductors 24
20XS4200
Figure 6. Overcurrent protection profile for applications with Inductive loads (DC motors, solenoids)
Figure 7. Timing requirements during SPI communication
IOCH1
t
OCM2_M
t
OCM1_M
t
OCH1
Time
Load
Current
IOCH2
IOCL1
IOCL2
t
OCH2
Inductive Load profile:
CONFs = 1 (V (pin 5/6) > 2.0 V)
Default levels shown as solid lines
Dynamic overcurrent window, activated
when the IOCLx threshold is crossed
Load current
IOCL3
RSTB
CSB
SCLK
SI Don’t CareMust be Valid Don’t Care
VIH
VIL
tWRSTB
VIH
VIL
VIH
VIL
VIH
VIL
Must be Valid
tENBL
10% VDD
10% VDD
tLEAD
tWSCLKh
90% VDD
10% VDD
tRSI
90% VDD
tCSB
tLAG
tFSI
tWSCLKl
tSI(SU)
tSI(H)
90% VDD
10% VDD
Don’t Care
VIH
VIL
SO
tSOEN
Tri-stated Tri-stated
tSODIS
25 NXP Semiconductors
20XS4200
Figure 8. Timing diagram for Serial Output (SO) data communication
Figure 9. Synchronous and Track & Hold current sensing modes: associated delay and settling times
SCLK
SO
VOH
VOL
tVALID
90% VDD
10% VDD
SO
High To Low
Low to High
VOL
VOL
VOH
VOH
tRSI tFSI
50%
10% VDD
90% VDD
tRSO
tFSO
10% VDD
VPWR
VHS[0:1]
tDLY_XX tDLY_XX
50%VPWR
Time
turn-on
VCSNS
Time
95% of scaled
Time
5.0 V
0.0 V
VSYNC
turn-off
control
control
tCSNSVAL_XX
tSYNCVAL
output current Track & Hold Mode
synchronous Mode
(tDLY(ON)) (tDLY(OFF)
(from IN_s or CSB) (from IN_s or CSB)
t
SYNREAD_XX
See Figure 4
NXP Semiconductors 26
20XS4200
5 Functional description
5.1 Introduction
The 20XS4200 is a two-channel, 24 V high side switch with integrated control and diagnostics designed for truck, bus, and industrial
applications. The device provides a high number of protective functions. Both low RDS(on) channels (<20 mΩ) can independently drive
various load types like light bulbs, solenoid actuators, or DC motors. Device control and diagnostics are configured through a 16-bit SPI
port with daisy chain capability.
Independently programmable output voltage slew rates allow satisfying electromagnetic compatibility (EMC) requirements.
Both channels can independently be operated in three different switching modes: internal clock and internal PWM mode (fully autonomous
operation), external clock and internal PWM mode, and direct control switching mode.
Current sensing with an adjustable ratio is available on both channels, allowing both high current (bulbs) and low current (LED) monitoring.
By activating the Track & Hold Mode, current monitoring can be performed during the switch-Off phase. This allows random access to the
current sense functionality. A patented offset compensation technique further enhances current sense accuracy.
To avoid turning off upon inrush current, while being able to monitor it, the device features a dynamic overcurrent threshold profile. For
bulbs, this profile is a stair function with stages of which the height and width are programmable through the SPI port. DC motors can be
protected from overheating by activating a specific window-shaped overcurrent profile that allow stall currents of limited duration.
Whenever communication with the external micro-controller is lost, the device enters Fail-safe operation mode, but remains operational,
controllable, and protected.
5.2 Pin assignment and functions
Functions and register bits that are implemented independently for both channels have extension “_s”. Max. ratings of the pins are given
in Table 3.
5.2.1 Output current monitoring (CSNS)
The CS pin allows independent current monitoring of channel 0 or channel 1 up to the steady state overcurrent threshold. It can also be
used to sense the device temperature. The different functions are selected by setting bits CSNS1_en and CSNS0_en to the appropriate
value (Table 23). When the CSNS pin is sensed during switch-off in the (optional) track & hold mode (see Figure 9), it outputs the scaled
value of the load current as it was just before turn-Off. When several devices share the same pull-down resistor, the CSNS pins of devices
the current of which is not monitored must be tri-stated. This is accomplished by setting CSNS0_en = 0 and CSNS1_en = 0 in the GCR
register (Table 10). Settling time (tCSNSVAL_XX) is defined as the time between the instant at the middle of the output voltage’s rising edge
(HS[0:1] = 50% of VPWR), and the instant at which the voltage on the CSNS-pin has settled to ±5.0% of its final value. Anytime an
overcurrent window is active, the CSNS pin is disabled (see Overcurrent detection on resistive and inductive loads). The current and
temperature sensing functions are unavailable in Fail-safe mode and in Normal mode when operating without the VDD supply voltage. In
order to generate a voltage output, a pull-down resistor is required (R(CSNS)=1.0 kΩ typ. and 470 < R(CSNS) < 10 k). When the current
sense resistor connected to the CSNS pin is disconnected, the CSNS voltage is clamped to VCL(CSNS). The CSNS pin can source currents
up to about 5.6 mA.
5.2.2 Current sense synchronization (SYNC)
To synchronize current sensing with an external process, the SYNC signal can be connected to a digital input of an external MCU. SYNC
is asserted logic low when the current sense signal is accurate and ready to be read. The current sense signal on the CSNS pin has the
specified accuracy tSYNREAD_XX seconds after the falling edge on the SYNC pin (Figure 9) and remains valid until a rising edge is
generated. The rising edge that is generated by the SYNC pin at the turn-OFF instant (internal or external) may also be used to implement
synchronization with the external MCU. Parameter tSYNCVAL_XX is defined as the time between the instant at the middle of the output-
voltage rising edge (HS[0:1] = 50% of VPWR), and the instant at which the voltage on the SYNC-pin drops below 0.4 V (VSOL). The SYNC
pins of different devices can be connected together to save µ-controller input channels. However, in this configuration, the CSNS function
of only one device should be active at a time. Otherwise, the MCU does not determine the origin of the SYNC signal. The SYNC pin is
open drain and requires an external pull-up resistor to VDD.
27 NXP Semiconductors
20XS4200
5.2.3 Direct control inputs (IN0 and IN1)
The IN[0:1] pins allow direct control of both channels. A logic [0] level turns off the channel and a logic[1] level turns it on (Channel control
in Normal mode). When the device is in Sleep mode, a transition from logic 0 to logic 1 on any of these pins wake it up (Sleep mode). If
it is desired to automatically turn on the channels after a transition to Fail-safe mode, inputs IN[0] and IN[1] must be externally connected
to the VPWR pin by a pull-up resistor (e.g. 10 kΩ typ.). However, this prevents the device from going into Sleep mode. Both IN pins are
internally connected to a pull-down resistor.
5.2.4 Configuration inputs (CONF0 and CONF1)
The CONF[0 :1] input pins allow configuring both channels for the appropriate load type. CONF = 0 activates the bulb overcurrent
protection profile, and CONF = 1 the DC motor profile. These inputs are connected to an internal voltage regulator of 3.3 V by an internal
pull-up current source IUP. Therefore, CONF = 1 is the default value when these pins are disconnected. Details on how to configure the
channels are given in Table 9.
5.2.5 Fault status (FSB)
This open-drain output is asserted low when any of the following faults occurs (see Fault mode): overcurrent (OC), overtemperature (OT),
Output connected to VPWR, Severe short-circuit (SC), openload in ON state (OL_ON), openload in OFF state (OL_OFF), External Clock-
fail (CLOCK_fail), overvoltage (OV), undervoltage (UV). Each fault type has its own assigned bit inside the STATR, FAULTR_s, or
DIAGR_s register. Fault type identification and fault bit reset are accomplished by reading out these registers. They are part of the SO
register (Fault mode) and are accessed through the SPI port.
5.2.6 PWM clock (CLOCK)
This pin is the input for an external clock signal that controls the internal PWM module.The clock signal is monitored by the device. The
PWM module controls ON-time and turn-ON delay of the selected channels. The CLOCK pin should not be confused with the SCLK pin,
which is the clock pin of the SPI interface. CLOCK has an internal pull-down current source (IDWN) to GND.
5.2.7 Reset (RSTB)
All SPI register contents are reset when RSTB = 0. When RSTB = 0, the device returns to Sleep mode tIN sec. after the last falling edge
of the last active IN[0:1] signal. As long as the Reset input (RSTB pin) is at logic 0 and both direct input states are low, the device remains
in Sleep mode (Channel configuration through the SPI). A 0-to-1 transition on RSTB wakes up the device and starts a watchdog timer to
check the continuous presence of the SPI signals. To do this, the device monitors the contents of the first bit (WDIN bit) of all SPI words
following that transition (regardless the register it is contained in). When this contents is not alternated within a duration tWDTO, SPI
communication is considered lost, and Fail-safe mode is entered (Entering Fail-safe mode). RSTB is internally pulled-down to GND by
resistor RDWN.
5.2.8 Chip Select (CSB)
Data communication over the SPI port is enabled when the CSB pin is in the logic [0] state. Data from the Input Shift registers are locked
in the addressed SI registers on the rising edge of CSB. The device transfers the contents of one of the eight internal registers to the SO
register on the falling edge of CSB. The SO output driver is enabled when CSB is logic [0]. CSB should transition from a logic [1] to a
logic [0] state only when SCLK is at logic [0] (Figure 7 and Figure 8). CSB is internally pulled up to VDD through IUP.
5.2.9 SPI serial clock (SCLK)
The SCLK pin clocks the SPI data communication of the device. The serial input pin (SI) transfers data to the SI shift registers on the
falling edge of the SCLK signal while data in the SO registers are transferred to the SO pin on the rising edge of the SCLK signal. The
SCLK pin must be in low state when CSB makes any transition. For this reason, it is recommended to have the SCLK pin in the logic [0]
state when the device is not accessed (CSB is at logic [1]). When CSB is set to logic [1], the signals at the SCLK and SI pins are ignored
and the SO output is tri-stated (high-impedance). The SCLK pin is connected to an internal pull-down current source IDWN.
NXP Semiconductors 28
20XS4200
5.2.10 Serial input (SI)
Serial input (SI) data bits are shifted in at this pin. SI data is read on the falling edge of SCLK. 16-bit data packages are required on the
SI pin (see Figure 7), starting with bit D15 (MSB) and ending with D0 (LSB). All the internal device registers are addressed and controlled
by a 4-bit address (D9-D12) described in Table 14. Register addresses and function attribution are described in Table 15. The SI pin is
internally connected to a pull-down current source, IDWN.
5.2.11 Supply of the digital circuitry (VDD)
This pin supplies the SPI circuit (3.3 V or 5.0 V). When lost, all circuitry becomes supplied by a VPWR derived voltage, except the SPI’s
SO shift-register that can no longer be read.
5.2.12 Ground (GND)
This is the GND pin common for both the SPI and the other circuitry.
5.2.13 Positive supply pin (VPWR)
This pin is the positive supply and the common input pin of both switches. A 100 nF ceramic capacitor must be connected between VPWR
and GND, close to the device. In addition, it is recommended to put a ceramic capacitor of at least 1.0 µF in parallel with this 100 nF
capacitor.
5.2.14 Serial output (SO)
The SO pin is a tri-stateable output pin that conveys data from one of the 13 internal SO registers or from the previous SI register to the
outside world. The SO pin remains in a high-impedance state (tri-state) until the CSB pin becomes logic [0]. It then transfers the SPI data
(device state, configuration, fault information). The SO pin changes state at the rising edge of the SCLK signal. For daisy-chaining, it can
be read out on the falling edge of SCLK. VDD must be present before the SO registers can be read. The SO register assignment is
described in Table 13.
5.2.15 Power switch output pins (HS0 and HS1)
HS0 and HS1 are the output pins of the power switches, to be connected to the loads. A ceramic capacitor (<= 22 nF (+/- 20%) is
recommended between these pins and GND for optimal EMC performances.
5.2.16 Fail-safe output (FSOB)
This pin (active low) is used to indicate loss of SPI communication or loss of SPI supply voltage, VDD. This open-drain output requires an
external pull-up resistor to VPWR.
29 NXP Semiconductors
20XS4200
5.3 Functional internal block description
Figure 10. Internal block description
5.3.1 Power supply
The device operates with supply voltages from 6.0 to 58 V (VPWR), but is full spec. compliant between 8.0 and 36 V. The VPWR pin
supplies power to the internal regulator, analog, and logic circuit blocks. The VDD pin (5.0 V typ.) supplies the output register of the Serial
Peripheral Interface (SPI). Consequently, the SPI registers cannot be read without presence of VDD. The employed IC architecture
guarantees a low quiescent current in Sleep mode.
5.3.2 Switch output pins HS0 and HS1
HS0 and HS1 are the output pins of the power switches. Both channels are protected against various kinds of short-circuits and have
active clamp circuitry that may be activated when switching off inductive loads. Many protective and diagnostic functions are available.
For large inductive loads, it is recommended to use a freewheeling diode. The device can be configured to control the output switches in
parallel, which guarantees good switching synchronization.
5.3.3 Communication interface and device control
In Normal mode the output channels can either be controlled by the direct inputs or by the internal PWM module, which is configured by
the SPI register settings. For bidirectional SPI communication, VDD has to be in the authorized range. Failure diagnostics and
configuration are also performed through the SPI port. The reported failure types are: OpenLoad, short-circuit to battery, severe short-
circuit to ground, overcurrent, overtemperature, clock-fail, undervoltage, and overvoltage. The SPI port can be supplied either by a 5.0 V
or by a 3.3 V voltage supply. For direct input control, VDD is not required.
A Pulse Width Modulation (PWM) circuit allows driving loads at frequencies up to 1.0 kHz from an external or an internal clock. SPI
communication is required to set these options.
POWER SUPPLY
MCU INTERFACE and
OUTPUT CONTROL
SPI INTERFACE
PARALLEL CONTROL
INPUTS
PWM CONTROLLER
SELF-
PROTECTED
HIGH SIDE
SWITCHES
HS0-HS1
MCU
INTERFACE
internal regulator
NXP Semiconductors 30
20XS4200
6 Functional device operation
6.1 Operation and operating modes
The device possesses two high side switches (channels) each of which can be controlled independently. The device has four fundamental
operating modes: Sleep, Normal, Fail-safe, and Fault mode, as shown in Table 6.
Each channel can be controlled in three different ways in Normal mode: by a signal on the Direct Input pin, by an internal clock signal
(autonomous operation) or by an external clock signal. For bidirectional SPI communication, a second supply voltage is required
(VDD = 5.0 V or 3.3 V). When only the direct inputs IN[x] are used, VDD isn’t required.
6.1.1 Device start-up sequence
To put the device in a known configuration and guarantee predictable behavior, the device must undergo a wake-up sequence. However,
it should not be woken up earlier than the moment at which VPWR has exceeded its undervoltage threshold, VPWR(UV), and VDD has
exceeded its supply failure threshold, VDD(FAIL). In applications using the SPI port, the device is typically put in wake mode by setting
RSTB=1. Wake-up of applications with direct input control can be achieved by having signals IN_ON[0] = 1 or IN_ON[1 ]= 1 (see
Figure 11). After wake-up, all SPI register contents are reset (as defined in Table 12 and Table 13) and Normal mode is entered. All the
device functions are available 50 µs later (typically).
If the start-up sequence is not performed at device start-up, its configuration may be undetermined and correct operation is not
guaranteed. In situations where the above described start-up sequence can not be performed, it is recommended to generate a wake-up
event after the moment VPWR has reached the undervoltage threshold.
6.1.2 Channel configuration through the SPI
6.1.2.1 Setting the channel configuration
The channel configuration is determined by the contents of the pulse-width (PWMR_s), the configuration (CONFR_s) and the overcurrent
(OCR_s) registers. They allow setting, among others, the following parameters: duty-cycle, delay, Slew Rate, PWM enable (PWM_en),
clock selection (CLOCK_sel), prescaler (PR), and direct_input disable (DIR_dis). Extension “_s” means that these registers exist for each
of both channels. Function assignment is described in detail in the section SI register addressing.
6.1.2.2 Reading back the channel’s status and settings
The channel’s global switching and operating states (ON/OFF, normal/fault) are all contained in the SO-STATR register (see Table 16).
The precise fault type can be found by reading out the FAULTR_s and STATR registers. The current channel settings (channel
configuration) can be known by reading the PWMR, CONF, OCR, RETRYR, GCR, and DIAG registers (see section Serial output register
assignment and beyond).
6.1.3 Normal mode
Normal mode (bit NM = 1) can be entered in two ways: either by driving the device through the direct inputs (IN[x]) or by establishing SPI
communication (requires RSTB =high). Bidirectional SPI communication additionally requires the presence of VDD. To maintain the device
in Normal mode, communication must take place regularly (see Entering and maintaining Normal mode). The device is in Normal mode
(NM) when:
•V
PWR (and VDD) are within the normal range and
wake-up = 1, and
•fail-safe = 0, and
•fault = 0.
6.1.3.1 Channel control in Normal mode
In direct input mode, the channel’s switching state (ON/OFF) is controlled by the logic state of the direct input signal with the default values
(00) of turn-on delay and slew rate, specified in Table 5.
31 NXP Semiconductors
20XS4200
In internal clock mode, the switching state is controlled by an internal clock signal (Internal clock and internal PWM (Clock_int_s bit = 1)).
Frequency, slew rate, duty-cycle, and turn-on delay are programmable independently for both channels.
In external clock mode, the frequency of the external clock controls the output's PWM frequency, but slew rate, duty-cycle, and turn-on
delay are still programmable.
6.1.3.2 Factors determining the channel’s switching state
The switching state of a channel is defined by the instantaneous value of the output voltage. It is defined as “On” when the output voltage
V(HS[x]) > VPWR /2 and “Off” when V(HS[x]) < VPWR /2. The channel’s switching state should not be confused with the device’s internal
channel control state hson[x] (= High Side On). Signal hson[x] defines the targeted switching state of the channel (On/Off). It is either
controlled by the value of the direct input signal or by that of the internal/external clock signals combined with the SPI register settings.
The value of hson[x] is given by the following boolean expression:
hson[x] = [(IN[x] and DIR_dis[x]) or (On bit [x] and Duty_cycle[x] and PWM_en[x] = 1) or (On bit [x] and PWM_en[x] = 0)].
In this expression Duty_cycle[x] represents the value of the duty cycle, set by bits D7…D0 of the PWMR register (Table 7). The channel’s
actual switching state may differ from the control signal’s state in the following cases:
short-circuits to GND, before automatic turn-Off (t < tFAULT)
short-circuits to VPWR when the channel is set to Off
•V
PWR < 13 V when openload in OFF state detection is selected and the load is actually lost
during the turn-on transition as long as V(HS[x])< VPWR/2
during the turn-off transition as long as V(HS[x]) > VPWR/2
6.1.3.3 Entering and maintaining Normal mode
A 0-to-1 transition on RSTB, (when both VPWR and VDD are present) or on any of both direct inputs IN[x] (when only supplied by VPWR)
puts the device in Normal mode. If desired, the device can be operated in Normal mode without VDD, but this requires that at least one of
both direct inputs be regularly turned on (Operation and operating modes). To maintain the device in Normal mode (NM), communication
must take place on a regular basis.
For SPI communication, the state of the WDIN bit must be alternated at least every 310 ms (typ.) (tWDTO), unless the WD_disable bit is
set to 1.
For direct input control, the timing requirements are shown in Figure 11. A signal called IN_ON[x] is not directly accessible to the user but
is used by the internal logic circuitry to determine the device state. When no activity is detected on a direct input pin (IN[x]) for a time longer
than tIN = 250 ms (typ.), timeout is detected and IN_ON[x] goes low. When this occurs on both channels, Sleep mode is entered (Sleep
mode), provided reset = RSTB = 0.
.
Figure 11. Relation between signals IN(x) and IN_ON[x]
6.1.3.4 Direct control mode
When RSTB = 0 (and also in Fail-safe mode), the channels are merely controlled by the direct input pins IN[x]. All protective functions (OC,
OT, SC, OV, and UV) are operational including auto-retry. To avoid entering Sleep mode at frequencies < 4.0 Hz, reset should be set to
RSTB = 1.
NXP Semiconductors 32
20XS4200
6.1.3.5 Going from Normal to Fail-safe, Fault or Sleep mode
The device changes from Normal to Fail-safe (Fail-safe mode), Sleep mode (Sleep mode), or Fault mode (Fault mode), according to the
value of the following signals (see Table 6).
wake-up = RSTB or IN_ON[0] or IN_ON[1]
•fail-safe = (VDD Failure and VDD_FAIL_en) or (SPI watchdog timeout (tWDTO) and WD_dis = 0)
•fault = OC[0:1] or OT[0:1] or SC[0:1] or UV or (OV and OV_dis)
It enters Fail-safe mode in case of a timeout on SPI communication or when VDD is lost after having been initially present (if this function
was previously enabled by setting: VDD_FAIL_EN bit = [1]). Setting watchdog disabled (WD_dis = 1, D4 of the GCR register) avoids
entering Fail-safe mode after watchdog timeout. Device behavior upon fault occurrence is explained in the paragraph on Faults (Fault
mode).
Figure 12. Device operating modes
6.1.4 Sleep mode
In Sleep mode, the channels and the SPI interface are turned off to minimize current consumption.
The device enters Sleep mode (wake-up = 0) when both Direct Input pins IN(x) remain Off longer than tIN sec. (when reset is active;
RSTB = 0). This is expressed as follows:
Table 6. Device operating modes
Mode Wake-up Fail-safe Fault Comments
Sleep 0 x x All channels are OFF.
Normal 1 0 0 The SPI Watchdog is active when: VDD = 5.0 V,
WD_dis = 0, RSTB = 1
Fail-safe 1 1 0 The channels are controlled by the IN inputs. (see
Fail-safe mode)
Fault 1 X 1 The channels are OFF, see Fault mode.
x = Don’t care.
Sleep (fail-safe = 0) and (wake-up = 1) and (fault = 0)
(wake-up = 0)
Fail-safe
Normal
(wake-up = 0)
(fail-safe = 1) and (wake-up = 1) and (fault = 0)
(fail-safe = 0) and (wake-up = 1) and (fault = 0)
(wake-up = 1) and
(fail-safe = 1)
and (fault = 0)
Fault
(wake-up = 0)
(wake-up = 1)
and (fault = 1)
(fail-safe = 0) and
(wake-up = 1) and
(fault = 1)
(fail-safe = 1) and
(wake-up = 1)
and (fault = 1)
(fail-safe = 0) and (wake-
up = 1) and (fault = 0)
(fail safe = 1) and
(wake-up = 1) and
(fault = 0)
33 NXP Semiconductors
20XS4200
•V
PWR (and VDD) are within the normal range, and
wake-up = 0 (wake-up = RSTB or IN_ON[0] or IN_ON[1])
and
fail-safe = X and
•fault = X
When employed, VDD must be kept in the normal range. Sleep mode is the default mode after the first application of the supply voltage
(VPWR), prior to any I/O communication (RSTB and the internal states IN_ON[0:1] are still at logic [0]). All SPI register contents remain in
their default state during sleep mode.
6.1.5 Fail-safe mode
6.1.5.1 Entering Fail-safe mode
Fail-safe mode is entered either upon loss of SPI communication or after loss of optional SPI supply voltage VDD (VDD out of range). The
FSOB pin goes low and the channels are only controlled by the direct inputs (IN[0:1]). All protective functions remain fully operational.
Previously latched faults are delatched and SPI register contents is reset (except bits POR & PARALLEL). The SPI registers can not be
accessed. These conditions are also described by the following expressions:
•V
PWR is within the normal voltage range, and
wake-up = 1, fault = 0, and
fail-safe = 1 ((VDD Failure and VDD_FAIL_en=1 before) or (t(SPI)> tWDTO and WD_dis = 0).
The last condition describes the loss of SPI communication which is detailed in the next section.
6.1.5.2 Watchdog on SPI communication and Fail-safe mode
When VDD is present, the SPI watchdog timer is started upon a rising edge on the RSTB pin. Thereafter the device monitors the state of
the first bit (WDIN) of all received SPI words. When the state of this bit is not alternated at least once within a data stream of duration
tWDTO = 310 ms typ., the device considers that SPI communication has been lost and enters Fail-safe mode. This behavior can be
disabled by setting the bit WD_DIS = 1. The value of watchdog timeout is derived from an internal oscillator.
6.1.5.3 Returning from Fail-safe to Normal mode
To exit Fail-safe mode and return to normal mode again, first a SPI data word with its WDIN bit = 1 (D15) must be received by the device
(regardless the register it is contained in and regardless the values of the other bits in this register). Next, a second data word must be
received within the timeout period (tWDTO = 310 ms typ.) to be able to change any SPI register contents. Upon entering Normal mode, the
FSOB pin returns to logic high and previously set faults and SPI registers are reset, except bits POR, PARALLEL and fault bits of latchable
faults that had actually been latched.
6.1.6 Fault mode
The device enters Fault mode when any of the following faults occurs in Normal or Fail-safe mode:
Overtemperature fault, (latchable fault)
Overcurrent fault, (latchable fault)
Severe short-circuit fault, (latchable fault)
Output shorted to VPWR in OFF state (default: disabled)
OpenLoad fault in OFF state (default: disabled)
OpenLoad fault in ON state (default: disabled)
External Clock Failure (default: enabled)
Overvoltage fault (enabled by default)
Undervoltage fault, (latchable fault)
The Fault Status pin (FSB) asserts a fault occurrence on any channel in real time (active low). Additionally, the assigned fault bit in the
STATR_s or FAULTR_s register is set to one. Conversely to the FSB pin, a fault bit remains set until the corresponding register is read,
even if the fault has disappeared. These bits can be read via the SO pin. Fault occurrence results in a turn-off of the incurred channel,
except for the following faults: openload (ON and OFF state), External Clock Failure and Output(s) shorted to VPWR. Under and
overvoltage occurrences cause simultaneous turn-off of both channels. Details on the device’s behavior after the occurrence of one of the
above faults can be found in Protection and diagnostic features.
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Fault mode (Operation and operating modes) is entered when:
•V
PWR (+VDD) were within the normal voltage range, and
wake-up = 1, and
•fail-safe = X, and
•fault = 1 (see Going from Normal to Fail-safe, Fault or Sleep mode)
6.1.6.1 Resetting FAULT bits
Registers STATR_s and FAULTR_s contain global and channel-specific fault information. Reading the register the fault bit is contained
in clears it, provided failure cause disappearance was detected and the fault wasn’t latched.
6.1.6.2 Entering Fault mode from Fail-safe mode
When a Fault occurs in Fail-safe mode, the device is in Fault/Fail-safe mode and behaves according to the description of fault mode.
However, SPI registers remain reset and can not be accessed. Only the Direct inputs control the channels.
6.1.6.3 Returning from Fault mode to Fail-safe mode
When disappearance of the fault previously produced in Fail-safe mode has been detected, the device returns to Fail-safe mode and
behaves accordingly. FSB goes high, but the auto-retry counter is not reset. Latched faults are not delatched. SPI registers remain reset.
6.1.7 Latchable faults
An auto-retry function (see Auto-retry) controls how the device responds to the so-called latchable faults. Latchable faults are: overcurrent
(OC), severe short-circuit (SC), overtemperature (OT), and undervoltage (UV). If a latchable fault occurs, the channel is turned off, the
FSB terminal goes low, and the assigned fault bit is set. These bits can not be reset before the next turn-on event is generated by auto-
retry. Next, the channel automatically turns on at a programmable interval (provided auto-retry was enabled and the channel wasn’t
latched).
If the failure disappears prior to the expiration of the available amount of auto-retries, the FSB pin automatically returns to logic [1], but the
fault bit remains set. It can then still be reset by reading the SPI register it is contained in.
However, the fault actually gets latched if the failure cause has not disappeared at the first turn-on event following expiration of the
available amount of auto-retries (see Auto-retry). In that case, the channel gets latched and the FSB terminal remains low. The fault bit
can not be reset by reading out the associated SPI register prior to performing a delatch sequence (Fault delatching).
6.1.7.1 Fault delatching
To delatch a latched channel and be able to turn it on again, a delatch sequence must be executed after disappearance of the failure
cause. Delatching resets the fault bit of latched faults (see Resetting FAULT bits). To reset the FSB pin, both channels must be delatched.
Delatching is achieved either by alternating the state of the channels’ fault control signal fc[x] (generating a 1_0_1 sequence), or by
resetting the auto-retry counter (provided retry is enabled). See Reset of the auto-retry counter. Delatching then actually occurs at the
rising edge of the turn-on event.
Signal fc[x] is an internal signal used by the device’s internal logic circuitry to control the diagnostic functions. The value of fc[x] depends
on the state of the variables IN_ON[x], DIR_dis[x] and ON[x] and is expressed as follows:
fc[x] = ((IN_ON[x] and DIR_dis[x] = 0) or ON[x] = 1)
Alternating the fc[x] signal is achieved differently according to the way the user controls the device.
In direct-input controlled mode (DIR_dis_s = 0), the IN[x] pin must be set low, remain low for at least tIN seconds, and set high again
(be switched On). This might happen automatically when operating at frequencies f<4.0 Hz.
In SPI-controlled mode, the ON_bit state (D8 of the PWMR_s reg.) must be alternated (‘toggled’). No minimum OFF state duration is
required in this case.
Performing a delatch sequence anytime during an ongoing auto-retry sequence (before latching) allows turning the channel on
unconditionally.
When a power-on event occurs (see Loss of VPWR, loss of VDD, and power-on reset (POR)), latched channels are also delatched and
faults are reset.
35 NXP Semiconductors
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When Fail-safe mode is entered (fault=1, fail-safe becomes 1) during operating in Fault mode (fault=1, fail-safe=0), previously latched
faults are delatched and SPI register content is reset (except bits POR & PARALLEL). The device is then in a combined Fail-safe/Fault
mode.
When the device was already in Fail-safe mode (fault=1, failsafe=1) and (new) faults occurs, the internal auto-retry counter does not reset
and latched channels are not delatched until a delatching sequence has been performed (see Protection and diagnostic features).
6.1.8 Programmable PWM module
Each channel has a fully independent PWM module activated by setting PWM_en_s. It modulates an internal or external clock signal.
Setting Clock_int_s = 1 (bit D6 of the OCR_s register) activates the internal clock, and setting Clock_int_s = 0 activates the external clock.
The duty cycle can be set in a range from 0% to 100% with 8 bit-resolution (Table 7) by setting bits D8…D0 of the PWMR_s register
(Table 12). The channel’s switching frequency equals the clock frequency divided by 256 in internal clock mode, and by 256 or 512 in
external clock mode.
Figure 13. Internal and external clock operation
.
By delaying the activation of one channel relative to the other (Table 8), switch-on surges can be delayed, which may improve EMC
performance. Switch-On delay can be selected among seven different values (default=0) by setting bits D2…D0 of the CONFR_s register
(expressed as a number of ext./int. PWM clock periods). To start the PWM function at a known point in time, the PWM_en_s bit (D8 /D7
of the GCR reg.) must be set to 1 after having set the PWMR_s (duty cycle) and CONFR_s (delay) registers. The best way to improve
EMC is to use an external clock with a staggered switch on delay.
Table 7. PWM duty cycle value assignment
ON-bit Duty cycle Channel configuration
0 X OFF
100000000 PWM (duty-cycle=1/256)
100000001 PWM (duty-cycle=2/256)
100000010 PWM (duty-cycle=3/256)
1 n PWM (duty-cycle=(n+1)/256)
111111111 fully ON
Table 8. Switch-on delay in PWM mode
Delay bits Switch-on delay
000 no delay
001 32 PWM clock periods
010 64 PWM clock periods
011 96 PWM clock periods
100 128 PWM clock periods
101 160 PWM clock periods
110 192 PWM clock periods
111 224 PWM clock periods
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6.1.8.1 External clock and internal PWM (CLOCK_int_s = 0)
The channels can be controlled by an external clock signal by setting bit D6 =0 of the OCR_s register (Clock_int_s). Duty cycle values
specified in Table 7 apply. When an external clock is used, the value of frequency division (256 when PR[x] = 0) may be doubled by
setting the prescaler bit PR[x]) = 1(bit D7 of the OCR_s reg.). This allows driving the channels at different switching frequencies from a
single clock signal. Simultaneously setting PWM_en_1=1 and PWM_en_0=1 synchronizes the channels.
The clock frequency on the CLOCK pin is monitored when external clock (CLOCK_int_s = 0) and pulse width modulation (PWM_en_s = 1)
are both selected. If a clock failure occurs under these conditions (f< fCLOCK(LOW) or f> fCLOCK(HIGH)), the external clock signal is ignored
and a fault is detected (FSB =0), CLOCK_fail bit is set (OD2 in the DIAGR register). The state of the ON_s bit in the SPI register then
determines the channel’s switching state. To return to external clock mode (and reset FSB), the clock-fail bit must be read and the external
clock has to be within the authorized range again.
6.1.8.2 Internal clock and internal PWM (Clock_int_s bit = 1)
By using a reference time slot (usually available from an external microcontroller), the period of each of the internal PWM clocks can be
changed or calibrated (see Programmable PWM module). Calibration of the default period = 1/fPWM(0) reduces it maximum variation from
about +/-30% to +/-10%. The programming procedure is initialized by sending a dedicated word to the SI-CALR register (see Table 7).
Next, the device sets the new value of the switching period in 2 steps. First it measures the time elapsed between the first falling edge on
the CSB pin and the next rising edge on the CSB pin (tCSB). Then it changes the value of the internal clock period accordingly. The actual
value of the channel’s switching period is obtained by multiplying the internal clock period by 256.
Figure 14. Internal clock calibration
When the duration of the negative CSB pulse is outside a predefined time slot (from t
CSB(MIN) to t
CSB(MAX)), the calibration event is ignored
and the internal clock frequency remains unchanged. If the value (fPWM(0)) has not been previously calibrated, it remains at its default level.
6.1.8.3 Synchronization of both channels
When internal clock signals are used to drive the PWM modules, perfect synchronization over a long time can not be achieved since both
clock signals are independent. However, when the channels are driven by an external clock, perfect synchronization can be achieved by
simultaneously setting PWM_en_1=1 and PWM_en_0=1. The best way to optimize EMC is to use an external clock with a staggered
switch on delay (see Table 8).
6.1.9 Parallel operation
The channels can be paralleled to drive higher currents. Setting the PARALLEL bit in the GCR register to logic [1] is mandatory in this
case. The improved synchronization of both transistors allows an equal current distribution between both channels. In parallel mode, both
output pins (HS[x]) must be connected (as well as both IN[x] pins in case of external control). CONF0 and CONF1 must be set to equal
values.
1- Device configuration in Parallel mode :
There are two ways to configure the On/Off control: SPI-configured PWM control and Direct Input Control.
SPI configured Parallel mode:
The switching configuration is solely defined by the (SI) PWMR_0, CONFR_0, OCR_0, and RETRY_0 registers. As soon as
PARALLEL=1, the contents of the corresponding registers in bank 1 are replaced by that of bank 0, except bits D6-D8 of the CONFR_1
CSB
SI
CALR_s SI command
ignored
Internal clock
period of channel s
tCSB
tCSB
37 NXP Semiconductors
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register (configuration of the openload/output short-circuited diagnostics). It is recommended to disable the OFF state openload for the
HS1 output (not necessary for 20XS4200B). After setting PARALLEL=1, contents of SO registers in bank 0 are copied to registers of bank
1 only when new information is written in them. Bits OD3, OD4 and OD5 of both FAULTR_s registers (OLON, OLOFF, OS) are always
reported independently.
Direct Input controlled Parallel mode:
The IN0 and IN1 pins must be connected externally.
2- Diagnostics in Parall el mode:
The diagnostics in Parallel mode operate as follows:
Openload in OFF state and - openload in ON state:
The OL_ON and OL_OFF bits of both FAULTR registers independently report failures of the channels according to the settings of bits D7
and D6 of the CONFR_s register.
Current sensing:
See Table 23 for a description of the various current sensing modes.
Only the Current sense ratio of bank 0 (D5 of the OCR_0 register) is considered. The corresponding bit in the OCR_1 register is copied
from that of the OCR_0 register.
output shorted to battery:
The OS-bit (OD3) of each of both FAULT registers independently report this fault, according to the settings of bit D8 of the CONFR_s reg.
3- Protections in Parallel mode:
Overcurrent:
-Only the configuration of overcurrent thresholds & blanking windows of channel 0 are considered.
-In case overcurrent (OC) occurs on any channel, both channels are turned-off. Regardless the order of occurrence of OC, both OC-bits
(OD0) in the FAULT registers are simultaneously set to logic 1.
severe short-circuit:
In case of SC detection on any channel, both channels are turned-off and the SC bits (OD1) in both FAULT registers are simultaneously
set to logic 1.
overtemperature:
In case of OT detection on any channel, both channels are turned-off and both OT bits in the FAULT registers (OD2) are simultaneously
set to logic 1.
auto-retry:
Only one 4-bit auto-retry counter specifies the number of successive turn-on events on paralleled channels (RETRYR_0). The counter
value in register RETRYR_1 (OD4…OD7) is copied from that in RETRYR_0.
To delatch the channels, only channel 0 needs to be delatched.
6.2 Protection and diagnostic features
6.2.1 Protective functions
6.2.1.1 Overtemperature fault (Latchable fault)
The channels have individual overtemperature detection. As soon as a channel’s junction temperature rises above TSD (175 °C typ.), it is
turned OFF, the overtemperature bit (OT = OD2) is set, and FSB = 0. FSB can only be reset by turning ON the channel when the junction
temperature of both channels has dropped below the threshold: TJ<TSD. Overtemperature is detected in ON and in OFF state:
If the channel is ON, the associated output is switched OFF, the OT bit is set, and FSB = 0.
If the channel is OFF: FSB goes to logic [0] and remain low until the temperature of both channels is below TSD and any of the channels
is turned on again.
The auto-retry function (if activated) automatically turns the channel on when the junction temperature has dropped below TSD. The OT
fault bit can only be reset by reading out the FAULTR register, provided that TJ<TSD and FSB = 1 again.
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6.2.1.2 Overcurrent fault (Latchable fault)
When overcurrent (OC) is detected, the channel is immediately turned Off (after t
FAULT seconds). The OC-bit is set to 1 and FSB becomes
low [0]. Overcurrent is detected anytime the load current crosses an overcurrent threshold or exceeds the window width of the selected
overcurrent protection profile. This profile is a stair function with windows the height and width of which are preselected through the SPI
port. The maximum allowable value of the load current at a particular moment in time is defined by levels I_OCH and I_OCM and windows
tOCM_x and tOCH (programmable by SPI bits). The steady-state overcurrent protection level I_OCL is defined by the settings of the OCL
and HOCR bits. Anytime an overcurrent window is active, current sensing is blanked and SYNC becomes 1.
6.2.1.3 Overcurrent duration counter
The load current can spend only a defined amount of time in a particular window of the overcurrent profile. If the time in the window
exceeds the selected window width (tOCx) or the overcurrent threshold is crossed, the channel is turned off (OC fault), followed by auto-
retry (if enabled). An internal overcurrent duration counter is employed for this function.
6.2.1.4 Overcurrent detection on resistive and inductive loads
According to the load type (resistive or inductive), one of two different overcurrent profiles should be selected. This is done by connecting
a resistor with the appropriate value between the CONF[0:1] pins and GND (Table 9).
.
39 NXP Semiconductors
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When overcurrent windows are active, current sensing is disabled and the SYNCB pin remains high. This is illustrated by Figure 15. After
turn on, the output voltage (second waveform (20 V/div.) and the output current (first waveform, 12 A/div.) rise immediately, but the current
sense voltage (third waveform, 2.0 V/div, 1.0 V = 3.0 A) and its synchronization signal SYNC (fourth waveform, 5.0 V/div.) only become
active at the end of the selected overcurrent window (duration tOCM2_L).
Figure 15. Current sense blanking during overcurrent window activity
Activation of the lighting profile is time driven and activation of the DC motor profile is event driven, as explained below.
In lighting mode, the height of the overcurrent profile is defined by three different thresholds (I_OCH, I_OCM and I_OCL, which stand for the
higher, the middle, and the lower overcurrent threshold), as illustrated by Figure 5. This profile has two adjacent windows the width of
which is compatible with typical bulb inrush current profiles. The width of the first of these windows is either tOCH1 or tOCH2. The width of
the second window is either tOCM1_L or tOCM2_L (see Table 18). The lighting profile is activated at each turn-on event including auto-retry,
except in switch mode. In switch mode, the profile is activated only at the first turn-on event, but is not renewed. During the on-period, the
load current is continuously compared to the programmed overcurrent profile. The channel is switched Off when a threshold is crossed
or a window width is exceeded.
In DC motor mode, only one overcurrent window exists, defined by only two different thresholds (I_OCH and I_OCL) as illustrated by
Figure 6. This window is opened anytime the output current exceeds the selected lower overcurrent threshold (IOCLx). In this case, the
allowed overcurrent duration is defined by parameters tOCM1_M, tOCM2_M, tOCH1 and tOCH2.
The selection of the different profiles and values is explained in the section Address A0100 Overcurrent protection configuration register
(OCR_s).
6.2.1.5 Auto-retry after overcurrent shut off
When auto-retry is activated, OC-latching (Overcurrent fault (Latchable fault)) only occurs after expiration of the available amount of auto-
retries (described in section Auto-retry).
6.2.1.6 Switch mode operation and overcurrent duration
Switch mode is defined as any device operation with a duty cycle lower than 100% at a frequency above fPWM_EXT (min.) or fPWM_INT
(min.). The device may operate in Switch mode in internal/external PWM or in direct input mode. In switch mode, the accumulated time
spent by the load current in a particular window segment during On times of successive switching periods is identified by the
aforementioned duration counter, and compared to the active segment width. The associated off-times are excluded by the duration
counter. The channel is turned-off when the value of the counter exceeds the window width. In Figure 16, overcurrent detection shutdown
Table 9. Overcurrent profile selection
CONF[0:1] resistor/voltage Type of load
1.0 kOhm < R(CONF[x]) < 10 kOhm
or 0 < V(CONF[X) < VIL (0.8 V)
resistive: CONF = 0,
Lighting-Mode
R(CONF[x]) > 50 kOhm
or VIH (2.0 V)< V(CONF) < 5.0 V
inductive: CONF = 1,
DC motor mode
NXP Semiconductors 40
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is shown in case of switch mode operation with a duty cycle of 50% (solid line) and 100% (fully-on, dashed line). The device is turned off
much later in switch mode than in fully-on mode, since the duration counter only counts overcurrent during on-times.
Figure 16. Overcurrent shutdown in PWM mode (solid line) and Fully-on mode (dashed line)
6.2.1.7 Reset of the duration counter
Reset of the duration counter is achieved by performing a delatch sequence (Fault delatching). In lighting mode (CONFs = 0), this counter
is also reset automatically at each auto-retry (but not in DC motor mode).
In DC motor mode, the duration counter is reset by a performing a delatch sequence and automatically after a full on-period without
overcurrent ([hson[x]=1 for any duration). Reset then actually occurs at the first turn-off instant following that on-period.
In switch mode, the duration counter is not reset by normal PWM activity unless delatching is performed.
6.2.1.8 Severe short-circuit fault (Latchable fault)
When a severe short-circuit (SC) is detected at turn-ON (wiring length LLOAD< LSHORT, see Table 4), the channel is shut off immediately.
For wiring lengths above LSHORT, the device is protected from short-circuits by the normal overcurrent protection functions
(Overtemperature fault (Latchable fault)). When an SC occurs, FSB goes low (logic [0]), and the SC bit is set, eventually followed by an
auto-retry. SC is of the latchable fault type (see Protection and diagnostic features and Fault delatching).
6.2.1.9 Overvoltage detection (enabled by default)
By default, the supply overvoltage protection (VPWR) is enabled. When overvoltage occurs (VPWR > VPWR(OV)), the device turns OFF both
channels simultaneously, the FSB pin is asserted low, and the OV fault bit is set to logic [1]. The channels remain OFF until the supply
voltage drops below a threshold voltage VPWR < VPWR(OV) - VPWR(OVHYS). The OV bit can then be reset by reading out the STATR
register.
The overvoltage protection can be disabled by setting the OV_dis = 1 in the general configuration (GCR) register. In this case, the FSB
pin neither asserts a fault occurrence, nor turns off the channels. However, the fault register (OV bit) still reports an overvoltage occurrence
(when VPWR > VPWR(OV)) as a warning. When VPWR > VPWR(OV), the value of the on-resistance on both channels (RDS(ON)) still lays within
the ranges specified in Table 4.
6.2.1.10 Undervoltage fault (Latchable fault)
The channels are always turned off when the supply voltage (VPWR) drops below VPWR(UV). FSB drops to logic [0], and the fault register’s
(common) UV bit is set to [1].
When the undervoltage condition then disappears, two different cases exist:
If the channel’s internal control signal hson[x] is off, FSB returns to logic [1], but the UV bit remains set until at least one output is turned
on (warning).
If the channel’s control signal is on, the channel is turned on if a delatch or POR sequence is performed prior to the turn on request.
The UV bit can then only be reset by reading out the STATR register.
Auto-retry (if enabled) starts as soon as the UV condition disappears.
41 NXP Semiconductors
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6.2.1.11 Extended mode protection
In extended mode (6.0 V < VPWR < 8.0 V or 36 V < VPWR < 58 V), the channels are still fault protected, but compliance with the specified
protection levels is not guaranteed. The register settings however (including previously detected faults) remain unaltered, provided VDD
is within the authorized range. Below 6.0 V, the channels are only protected from overtemperature, and this fault is only reported in the
SPI register the moment VPWR has again risen above VPWR(UV). To allow the outputs to remain ON between 36 V and 58 V, overvoltage
detection should be disabled (by setting OV_dis = 1 in the GCR register).
Faults (overtemperature, overcurrent, severe short-circuit, over and undervoltage) are reset if:
•V
DD < VDD(FAIL) with VPWR in the normal voltage range
•V
DD and VPWR are below the VSUPPLY(POR) voltage threshold
The corresponding SPI register is read after the disappearance of the failure cause (and delatching)
6.2.1.12 Drain/source overvoltage protection
The device tries to limit the Drain-to-Source voltage by turning on the channel whenever VDS exceeds VDS(CLAMP). When a fault occurs
(SC, OC, OT, UV), the device is rapidly switched Off (in t < tFAULT seconds), regardless the value of the selected slew rate. This may
induce voltage surges on VPWR and/or the output pin (HS[x]) when connected to an inductive line/load. Turning on the device also
dissipates the energy stored in the inductive supply line. This function monitors overvoltage for VPWR > 30 V. For supply voltages VPWR
< 30 V, the device is protected from negative output voltages by automatically turning on the channel. The feature remains functional after
device ground loss.
6.2.1.13 Supply overvoltage protection
In order to protect the device from excessive voltages on the supply lines, the voltage between the device’s supply pins (VPWR and the
GND) is monitored. When the VPWR-to-GND voltage exceeds the threshold VD_GND(CLAMP), the channel is automatically turned on. The
feature is not operational in cases of ground loss.
6.2.1.14 Negative output voltage protection
The device tries to limit the undervoltage on the output pins HS[x] when turning off inductive loads. When the output voltage drops below
VCL, the channel is switched on automatically. This feature is not guaranteed after a device ground loss.
The energy dissipation capabilities of the circuit are defined by the ECL [0:1] parameters. For inductive loads larger than 20 µH, it is
recommended to employ a freewheeling diode. The three different overvoltage protection circuits are symbolically represented in
Figure 17. The values of the clamping diodes are those specified in Table 4. Coupling factor k represents the current ratio between the
current in the supply-voltage measurement-diode (zener) and the current injected into the MOSFET’s gate to turn it on.
.
Figure 17. Supply and output voltage protections
IMEG
GND
Loa d
HS[ x]
VPWR
DC
VDS(CLAMP)-
Vth
VD_GND(Clamp)
I
2
VCL- Vth
K.Iz
Vth
NXP Semiconductors 42
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6.2.1.15 Reverse voltage protection on VPWR
The device can withstand reverse supply voltages on VPWR down to -28 V. Under these conditions, the outputs are automatically turned
On and the channel’s on-resistance (RDS(on)) is similar to that during positive supply voltages. No additional components are required to
protect the VPWR circuit except series resistors (>8.0 k) between the direct inputs IN[0:1] and VPWR, in case they are connected to VPWR.
The VDD pin needs reverse voltage protection from an externally connected diode (Figure 23).
6.2.1.16 Load and system ground loss
In case of load ground loss, the channel’s state does not change, but the device detects an openload fault. In case of a system GND loss,
the channels are turned off.
6.2.1.17 Device ground loss
In the (improbable) case the device loses all of its three ground connections (pins 14, 17, and 22), the channels’ state (ON/ OFF), depends
on several factors: the values of the series resistors connected to the device pins, the voltage of the direct input signals, the device’s
momentary current consumption (influenced by the SPI settings) and the state of other high side switches on the board when there are
pins in common like FSB, FSOB, and SYNC. In the following description, all voltages are referenced to the system (module) GND.
When series resistors are used, the channel state can be controlled by entering Fail-safe mode. The channels are turned off automatically
when the voltage applied to the IN[x] input(s) through the series resistor(s) is not higher than VDD and be turned on when the IN[x] input(s)
are tied to VPWR. Fail-safe is entered under the following conditions:
all unused pins are tied to the overall system’s GND connection by resistors > 8.0 k
any device pin connected to external system components has a series resistors > 8.0 k (except pins Vpwr, VDD, HS[0], HS[1], and
R(CSNS)>2.0 k)
the FSB, FSOB, and SYNC pins are in the logic high state when they are shared with other devices. This means that none of the
other devices is in Fault or Fail-safe mode, nor should current sensing be performed on any one of them when GND is lost
When no series resistors are employed, the channel state after GND loss is determined by the voltage on pins IN[0:1] and the voltage
shift of the device GND. Device GND shift is determined by the lowest value of the external voltage applied to either pin of the following
list: CLOCK, FSB, IN[0:1], FSOB, SCLK, CS,SI, SO, RSTB, CONF[0:1], SYNC, and CSNS. When the device GND voltage becomes logic
low (V(GND)< VIL), the SPI port continues to operate and the device operates normally. When the GND voltage becomes logic high
(V(GND)> VIH), SPI communication is lost and Fail-safe mode is entered. When the voltage applied to the IN[0:1] input is VPWR, the
channel is turned on when it is VDD, the channel is turned off if (VDD - V(GND)) < VIH.
6.2.2 Supply voltages out of range
6.2.2.1 VDD out of range
If the external VDD supply voltage is lost (or falls outside the authorized range: VDD<VDD(FAIL)), the device enters Fail-safe mode, provided
the VDD_FAIL_en bit had been set. Consequently, the contents of all SPI registers are reset. The channels are controlled by the direct
inputs IN[0 :1] (if VPWR is within the normal range). Since the VPWR pin supplies the circuitry of the SPI, current sense and most of the
protective functions (overtemperature, overcurrent, severe short-circuit, short to VPWR, and OpenLoad detection circuitry), these faults
are still detected and reported at the FSB pin. However, without VDD, the SO pin is no longer functional. The SPI registers can no longer
be read and detailed fault information is unavailable. Current sensing also becomes unavailable. If VDD_FAIL_EN wasn’t set before VDD
was lost, the device remains SPI-controlled, even though the SPI registers can’t be read. No current flows from the VPWR to the VDD pin.
6.2.2.2 VPWR supply voltage out of range
In case VPWR is below the undervoltage threshold VPWR(UV), it is still possible to address the device by the SPI port, provided VDD is within
the normal range. It does not prevent other devices from operating when a device is part of a daisy-chain. To accomplish this, RSTB must
be kept at logic [1]. When the device operates at supply voltages above the maximum supply voltage (VPWR=36 V), SPI communication
is not affected (see Overvoltage detection (enabled by default)). The internal pull-up and pull-down current sources on the SPI pins are
not operational. Executing a Power-on-Reset (POR) sequence is recommended when VPWR re-enters its authorized range. No current
flows from the VDD to the VPWR pin.
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6.2.2.3 Loss of VPWR, loss of VDD, and power-on reset (POR)
In typical applications (Figure 23 and Figure 24), an external voltage regulator may be used to derive VDD from VPWR. In wake mode, a
Power-on-Reset (POR) sequence is executed and the POR bit (OD6 of the STATR register) is set when:
•V
PWR > VPWR (POR), after a period VPWR < VPWR (POR) (and VDD < VDD (POR) before and after)
•V
DD > VDD (POR) after a period with VDD < VDD (POR) (VPWR < VPWR (POR) before and after)
POR is also set at the transition to wake-up (by setting RSTB =1 or IN[x]=1) when VPWR > VPWR (POR) (before and after) or VDD >VDD(POR)
(before and after). POR is not performed when VPWR > VPWR (POR) after a period VPWR < VPWR (POR) (and VDD > VDD (POR) permanently).
Figure 18. State machine: fault occurrence and auto-retry
6.2.3 Auto-retry
The auto-retry circuitry automatically tries to turn on the channel on a cyclic basis. Only faults of the latchable type (overcurrent, severe
short-circuit, overtemperature (OT), and undervoltage (UV)) may activate auto-retry. For UV and OT faults, auto-retry only starts after
disappearance of the failure cause (when auto-retry is enabled). The retry condition is expressed by:
Retry[x] = OC[x] or SC[x] or OT[x] or UV.
If Auto-retry has been enabled, its mode of operation depends on the settings of the auto-retry related bits (bits D0...D3 of the SI-RETRY_s
register, see Table 12) and the available amount of auto-retries (bits OD7...OD4 of the SO-RETRY_s reg.). More details can be found in
Amount of auto-retries.
If Auto-retry is disabled, latchable faults are immediately latched upon their occurrence (see Protection and diagnostic features).
OFF ON
Latched
OFF
OFF ON
(OV = 1)
(fc[x] = 1 and (OV = 0))
(fc[x]= 0 or OV = 1)
(fc[x] = 0)
(fc[x] = 0)
(fc[x] = 0)
(Retry = 1)
= > count = count+1
(Retry = 1) (count = 16)
(after Retry Period and OV = 0 and OT = 0 and UV = 0)
(OpenLoadOFF = 1
or OS = 1
(OpenLoadOFF = 1
or OS = 1
(OpenloadOFF = 1
or OS = 1
(OpenLoadON = 1)
(OpenLoadON = 1)
or OV = 1)
or OV = 1
or OV = 1)
or UV = 1
or OT = 1)
Auto-retry Loop
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6.2.3.1 Auto-retry configuration
To enable the auto-retry function, bit retry_s (D0 of the SI RETRY_s register) has to be set to the appropriate value. Auto-retry is enabled
for retry_s = 0 when the channel is configured for lighting applications (CONF=0). It is enabled for retry_s=1 for DC motor applications
(CONF[x] =1).
If auto-retry is enabled, an auto-retry sequence starts when the channel’s fault control signal is set to 1 (fc[x] = 1, see Fault delatching)
and the retry condition applies (Retry[x]=1, see Auto-retry).
When a failure occurs (fault = 1), the channel automatically switches on again after the auto-retry period. The value of this period (tAUTO)
is set through the SPI port (bits D2 and D3 of the RETRY_s register, see Table 22). When the failure cause disappears before expiration
of the available amount of auto-retries, the device behaves normally (FSB = 1), but the retry counter keeps its current value and the fault
bit remains set until it is cleared. This guarantees a maximum device availability without preventing fault detection.
6.2.3.2 Amount of auto-retries
In case the device is configured for an unlimited amount of auto-retries (Retry_unlimited_s = 1), auto-retry continues as long as the device
remains powered. The channel never latches off.
In case a limited amount of retries was selected (Retry-unlimited_s = 0), auto-retry continues as long as the value of the 4-bit auto-retry
counter does not exceed 15 (bits OD4...OD7 of the RETRY_s register). After 15 retries, the Rfull bit of the STATR (OD4 for channel 0,
OD5 for channel 1) register is set to a logic high. The amount of available auto-retries is then reduced to one. If the fault still hasn’t
disappeared at the next retry, the corresponding channel is switched off definitively and the fault is latched (FSB = 0, see Protection and
diagnostic features and Fault delatching).
Any channel can be turned on at any moment during the auto-retry cycle by performing a delatch sequence. However, this does not reset
the retry counter.
The value of the auto-retry counter can be read back in Normal mode only (SO-RETRYR register bits OD7-OD4).
6.2.3.3 Reset of the auto-retry counter
Any one of the below events reset the retry counter:
Fail-safe is entered (Fail-safe mode)
Sleep mode is left (Sleep mode)
POR occurs (Supply voltages out of range)
the retry function is set to unlimited (bit Retry-unlimited_s = 1 (D1 = 1))
the retry function is disabled (retry_s bit= D0 of the RETRY_s register under goes a 1-0 transition for CONF = 1 and a 0-1 transition for
CONF = 0).
If the channel is latched at the moment the auto-retry counter was reset (case 4), the channel is delatched, and turned on after one retry
period (if retry was enabled).
6.2.3.4 Auto-retry and overcurrent duration
During the on-period following an auto-retry, the load current profile is compared to the length and height of the selected overcurrent
threshold profile, as described in the section on overcurrent protection (See Overcurrent fault (Latchable fault)).
When the lighting profile is activated, the overcurrent duration counter is reset at each auto-retry (to allow sustaining new inrush currents).
For DC motor mode however, it is only reset at the turn-off event of the first PWM period without any overcurrent (see Reset of the duration
counter). Figure 18 gives a description of the retry state machine with the various transitions between operating modes.
Table 10. Auto-retry activation for lamps (CONF=0) and DC motors (CONF=1)
CONF[x] Retry_s bit auto-retry
0 0 enabled
0 1 disabled
1 0 disabled
1 1 enabled
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6.2.4 Diagnostic features
Diagnostic functions openload-in-ON state (OLON), openload-in-OFF state (OLOFF) and output short-circuited to VPWR (OS) are
operational over the frequency and duty cycle ranges specified in Table 5 for PWM mode, but the precise values also depend on the way
the device is controlled (direct/internal PWM), on the current sense ratio and on the optional activation of the openload-in-ON state
detection. As an example, in direct input (DIR_dis_s = 0), Low-Current mode (CSR1), OLON, OLOFF and OS detection are performed
for duty cycle values up to: RPWM_400_h = 85% (instead of 90%) when openload in ON state detection is enabled (OLON_dis=0).
Occurrence of an OLON, OLOFF or OS fault sets the associated bit in the FAULTR_s register but does not trigger automatic turn-off. Any
of these diagnostic functions can be disabled by setting OLON_dis_s=1, OLOFF_dis_s=1, or OS_dis_s=1 (bits D8...D6 of the CONFR
reg.).
The functions are guaranteed over the specified ranges for output capacitor values up to 22 nF (+/-20%).
6.2.4.1 Output shorted-to-VPWR fault
The device detects short-circuits between the output and VPWR. The detection is performed during the OFF state. The output-shorted-
to-VPWR fault-bit (OS_s) is set whenever the output voltage rises above VOSD(THRES). The fault is reported in real time on the FSB pin
and saved by the OS_s bit. Occurrence of this fault does not trigger automatic turn-off.
Even if the short-circuit disappears, the OS_s bit is not cleared until the FAULTR register is read. The function may be disabled by setting
OS_dis_s=1. The function operates over the duty cycle ranges specified in Diagnostic features.
This type of event shall be limited to 1000 min. during the vehicle lifetime. In case of permanent output shorted to the battery condition, it
is needed to turn-on the corresponding channel.
6.2.4.2 Openload detection in OFF state
Openload-in-OFF state detection (OL_OFF) is performed continuously during each OFF state (both for CSR0 and CSR1). This function
is implemented by injecting a small current into the load (IOLD(OFF)). When the load is disconnected, the output voltage rises above
VOLD(THRES). OL_OFF is then detected and the OL_OFF bit in the FAULTR register is set. If disappearance of the openload fault is
detected, the FSB output pin returns to a high immediately, but the OL_OFF bit in the fault register remains set until it is cleared by a read
out of the FAULTR register. The function may be disabled by setting OLOFF_dis_s=1. The function operates over the duty cycle ranges
specified in Diagnostic features.
6.2.4.3 Openload detection in ON state (OL_ON)
Openload-in-ON state detection (OLON) is performed continuously during the ON state for CSR0 over the ranges specified in section
Diagnostic features. An openload-in-ON state fault is detected when the load current is lower than the openload current threshold IOLD(ON).
This happens at IOLD(ON) = 150 mA (typ.) for high current sense mode (CSR0), and at 7.0 mA (typ.) for low current mode. FSB is asserted
low and the OLON bit in the fault register is set to 1 but the channel remains On. FSB goes high as soon as disappearance of the failure
cause is detected, but the OL_ON bit remains set.
In high current mode (CSR0), openload-in-ON state detection is done continuously during the On state and the OLON-bit remains set
even if the fault disappears.
In high current mode, the OLON-bit is cleared when the FAULTR register is read during the OFF state, even if the fault hasn't disappeared.
The OLON-bit is also cleared when the FAULTR register is read during the ON state, provided the failure cause (load disconnected) has
disappeared.
In low current mode (CSR1), OL_ON is done periodically instead of continuously and only operates when fast slew rate is selected. When
the internal PWM module is used with an internal or external clock (case 1), the period is 150 ms (typ.). When the direct inputs are used
(case 2), the period is that of the input signal. The detection instants in both cases are given by the following:
1. In internal PWM (int./ext. clock), low current mode (CSR1), OpenLoad in ON state detection is not performed each switching
period, but at a fixed frequency of about 7.0 Hz (each tOLLED =150 ms typ.). The function is available for a duty cycle of 100%.
OLON detection is also performed at 7.0 Hz, at the first turn-off event occurring 150 ms after the previous OL_ON detection event
(before OS and OL_OFF).
2. In direct input, low current mode (CSR1), OL_ON is performed each switching period (at the turn-off instant) but the duty cycle is
restricted to the values. Consequently, when the signal on the IN[x] pin has a duty cycle of 100%, OL_ON is not performed. To
solve this problem, either the internal PWM function must be activated with a duty cycle of 100%, or the channel’s direct input must
be disabled by setting Dir_dis_s=1 (bit D5 of the CONFR-s register). The OLON-bit is only reset when the FAULTR register is read
after occurrence of an OL_ON detection event without fault presence.
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6.2.4.4 Openload detection in discontinuous conduction mode
If small inductive loads (solenoids/DC motors) are driven at low frequencies, discontinuous conduction mode may occur. Undesired
openload in ON state errors may then be detected, as the inductor current needs some time to rise above the openload detection threshold
after turn-on. This problem can be solved by increasing the switching frequency or by disabling the function and activating openload in
OFF state detection instead.
When small DC motors are driven in discontinuous conduction mode, undesired openload in OFF state detection may also occur when
the load current reaches 0.0 A during the OFF state. This problem can be solved by increasing the switching frequency or by enabling
openload in OFF state detection only during a limited time, preferably directly after turn-off (see Diagnostic features). The signal on the
SYNC pin can be used to identify the turn-off instant.
6.2.5 Current and temperature sensing
The scaled values of either of the output currents or the temperature of the device’s GND pin (#14) can be made available at the CSNS
pin. To monitor the current of a particular channel or the general device temperature, the CSNS0_en and CSNS1_en bits (see Table 23)
in the General Configuration Register (GCR) must be set to the appropriate values. When overcurrent windows are active, current sensing
is disabled and the SYNCB pin remains high.
6.2.5.1 Instantaneous and sampled current sensing
The device offers two possibilities for load current sensing: instantaneous (synchronous) sensing mode and track & hold mode (see
Figure 9). In synchronous mode, the load current is mirrored through the current sense pin (Output current monitoring (CSNS)) and is
therefore synchronous with it. After turn-off, the current sense pin does not output the channel current. In track & hold mode however, the
current sense pin continues to mirror the load current as it was just before turn-off. Synchronous mode is activated by setting the T_H_en
bit to 0, and Track & Hold mode by setting the T_H_en bit to 1.
6.2.5.2 Current sense ratio selection
The load current is mirrored through the CSNS pin with a sense ratio (Figure 19) selected by the CSNS_ratio bit in the OCR register. To
achieve optimal accuracy at low current levels, the lower current sensing ratio, called CSR1, must be selected. In that case, the
overcurrent threshold levels are decreased. The best accuracy that can be obtained for either ratio is shown in Figure 20. The amount of
current the CSNS pin can sink is limited to ICSNS,MAX..The CSNS pin must be connected to a pull-down resistor (470 Ω < R(CSNS)
<10 kΩ, 1.0 kΩ typical), in order to generate a voltage output. A small low-pass filter can be used for filtering out switching transients
(Figure 23). Current sensing operates for load currents up to the lower overcurrent threshold (OCLx A).
6.2.5.3 Synchronous current sensing mode
For activation of synchronous mode, T_H_en must be set to 0 (default). After turn-on, the CSNS output current accurately reflects the
value of the channel’s load current after the required settling time. From this moment on (CSNS valid), the SYNC pin goes low and remains
low until a switch off signal (internal/external) is received. This allows synchronization of the device’s current sensing feature with an
external process running on a separate device (see Current sense synchronization (SYNC)). After turn-off, the load current does not flow
through the switch, and the load current cannot be monitored.
6.2.5.4 Track & Hold current sensing mode
In Track & Hold mode (T&H) (T_H_en = 1), conversely from synchronous mode, the CSNS output current is available even after having
switched off the load. This feature is useful when the device operates autonomously (internal clock/PWM), since it allows current
monitoring without any synchronization of the device. An external sample and hold (S/H) capacitor is not required. After turn on, the CSNS
output current reflects the channel’s load current with the specified accuracy after occurrence of the negative edge on the SYNC pin, as
in synchronous mode (see Current sense synchronization (SYNC)). However, at the switch-off instant, the last observed CSNS current is
sampled and its value saved, thanks to an internal S/H capacitor. The SYNC pin goes high (SYNC = 1). If the channel on which Track &
Hold current sensing is performed is changed to another, the internal S/H hold capacitor is first emptied and then charged again to allow
current monitoring of the other channel. Consequently, T&H current monitoring of a channel is lost when this channel is in the OFF state
at the moment the current is monitored on the other channel. Track & Hold mode should not be used for frequencies below 60 Hz.
When Track and Hold is used to sense the temperature and then to sense a current, the Track & Hold mode has to be reset by a turn off,
then turn on before sensing a new current.
47 NXP Semiconductors
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.
Figure 19. Current sensing ratio versus output current
6.2.5.5 Current sense errors
Current sense accuracy is adversely affected by errors of the internal circuitry’s current sense ratio and offset. The value of the current
sensing output current can be expressed with sufficient accuracy by the following equation:
ICSNS = (I(HS[x])+ I_LOAD_ERR_SYS + I_LOAD_Err_RAND)*CSRx (1)
with CSR0 = (1/1500+εGAIN0) and CSR1 = (1/500+εGAIN1).
The device’s offset error has a “systematic” and a “random” component (I_LOAD_ERR_SYS, I_LOAD_ERR_RAND). At low current levels, the
random offset error may become dominant. The systematic offset error is caused by predictable variations with supply voltage and
temperature, and has a small but positive value with small spread. The random offset error is a randomly distributed parameter with an
average value of zero, but with high spread. The random offset error is subject to part-to-part variations and also depends on the values
of supply voltage and device temperature. The device has a special feature called offset compensation, allowing an almost complete
compensation of the random offset error (see ESR0_ERR). This offset compensation technique greatly minimizes this error. Computing the
compensated current sensing value is illustrated in the next sections.
6.2.5.6 Activation and use of offset compensation
According to the settings of the OFP_s bit (in the RETRYR_s register), opposite values of the random offset error are generated. To
compensate the random offset error, two separate measurements with opposite values of the random offset error are required. The
measured values must be saved by an external µ-processor. Compensation of the random offset error is achieved by computing the
average of both. When a dedicated bit called Offset Positive (OFP = bit D8 of the RETRYR_s register) is set to 1, the current sunk through
the CSNS pin (ICSNS) can be described by:
ICSNS1=CSRx *(ILOAD+ I_LOAD_ERR_SYS+ I_LOAD_ERR_RAND)(2)
When bit OFP is set to 0, ICSNS can be described by:
ICSNS2 = CSRx *(ILOAD+ I_LOAD_ERR_SYS - I_LOAD_ERR_RAND) (3)
The random offset term I_LOAD_ERR_RAND can be computed from equations (2) and (3) as follows:
I_LOAD_ERR_RAND = (ICSNS1 - ICSNS2) / (2*CSRx)(4)
The compensated current sense value ICSNS,COMP can be obtained by computing the average value of measurements ICSNS1 and ICSNS2
as follows:
ICSNS,COMP = (ICSNS1 + ICSNS2) / 2 (5)
When equations 2 and 3 are substituted in equation 5, the random offset error cancels out, as shows eq. 6:
ICSNS,COMP = (I_LOAD_ERR_SYS + ILOAD) * CSRx (6)
The systematic offset error I_LOAD_ERR_SYS is referenced at the operating point 28 V and 25 °C. It can eventually be fine tuned by
performing a calibration. Gain errors at 25 °C (=current sense ratio errors, represented by εGAIN0 and εGain1) can also be reduced by
performing a calibration at a point in the range of interest. If calibration can not be done, it is recommended to use the typical value of
I_LOAD_ERR_SYS (see ESR0_ERR).
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6.2.5.7 Current sense error model
The figures of uncompensated and compensated current sense accuracy mentioned in Table 4 have been obtained applying the error
model of eq. 7 to the data:
ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx (7)
ESRx_ERR = (ICSNS1 - ICSNS_MODEL)/ICSNS_MODEL (8)
ESRx_ERR(COMP)= (ICSNS,COMP - ICSNS_MODEL)/ICSNS_MODEL (9)
The computation has been applied to each of the specified measurement points. Model parameters I_LOAD_ERR_SYS and CSRx have the
nominal values, specified in ESR0_ERR.
The load current can be computed from this model as:
I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS (10)
I(HS[x]) = ICSNS,COMP / CSRx - I_LOAD_ERR_SYS (11)
Using expression (11) generally gives more accurate values than expression (10), since in expression (11), random offset errors have been
compensated.
6.2.5.8 Offset compensation in Track & Hold mode
In Track & Hold mode, the last observed sense current (ICSNS) is sampled at the switch off instant. This takes into account the currently
active settings of the OFP_s offset compensation bit. Changing the value of the OFP bit during the switch’s off time produces an identical
value of the current sense output. Consequently, to implement the before mentioned offset compensation technique, the channel must
have been turned on at least once prior to sensing the output current with an opposite value of the OFP bit.
6.2.5.9 System requirements for current monitoring
Current monitoring is usually implemented by reading the (RC-filtered) voltage across the pull-down resistor connected between the
CSNS pin and GND (Figure 23). Therefore, measurements (1) and (2) must be spaced sufficiently wide apart (e.g. 5 time constants) to
get stabilized values, but close enough to be sure that the offset value wasn’t changed. The A/D converter of the external micro controller
that is used to read the current sense voltage V(csns) must have sufficient resolution to avoid introducing additional errors.
6.2.5.10 Accuracy with and without offset compensation
The sensing accuracy for CSR0 and CSR1, obtained before and after offset compensation, is shown in Figure 20 (solid lines = full scale
accuracy with offset compensation and dotted lines without offset compensation).
.
Figure 20. Current sense accuracy versus output current
In Track & Hold mode, the accuracy of the current sense function is lowered according to the values shown in Figure 21 (error percentage
as a function of the switch-off time is displayed, for CSR0 and CSR1). Track & Hold mode shouldn’t be used below f= 60 Hz.
49 NXP Semiconductors
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Figure 21. Track and Hold current sense accuracy
6.2.5.11 Temperature prewarning detection
In Normal mode, the temperature prewarning (OTW) bit is set (bit OD8 of the FAULTR register) when the observed temperature of the
GND pin is higher than TOTWAR (pin #14, see Figure 3). The feature is useful when the temperature of the direct surroundings of the device
must be monitored. However, the channel isn’t switched off. To be able to reset the OTW-bit, the FAULTR register must be read after the
moment that temperature T °C < TOTWAR.
6.2.5.12 Switching state monitoring
The switching state (ON/OFF) of the channels is reported in real time by bits OUT[x] in the STATR register (bit OD0/OD1). The Out[x] bit
is asserted logic high when the channel is on (output voltage V(HS[x]) higher than VPWR /2). When supply voltage VPWR drops below 13 V,
the reported channel state may not correspond to the state of the channel’s control signal hson[x] in case of an openload fault (see Factors
determining the channel’s switching state).
6.2.6 EMC Performances
Specified EMC performance is board and module dependent and applies to a typical application (Figure 23). The device withstands
transients per ISO 7637-2 /24 V. An external freewheeling diode connected to at least one output is required for sustaining ISO 7637 Pulse
1 (-600 V). To withstand Pulse 2, at least one of the two channels must be connected to a typical load (bulb). It withstands electric fields
up to 200 V/m and Bulk Current Injection (BCI) up to 200 mA per ISO11452.
6.3 Logic commands and SPI registers
6.3.1 SPI protocol description
The SPI interface offers full duplex, synchronous data transfer over four I/O lines: Serial Input (SI), Serial Output (SO), Serial Clock
(SCLK), and Chip Select (CSB).The SI / SO pins of the device follow a first-in first-out (D15 to D0) protocol. Transfer of input and output
words starts with the most significant bit (MSB). All inputs are compatible with 5.0 or 3.3 V CMOS logic levels. Parity check is performed
after transfer of each 16-bit SPI data word.The SPI interface can be driven without series resistors provided that voltage ratings on VDD
and SPI pins (Table 3) aren’t exceeded. Unused SPI pins must be tied to GND, eventually by resistors (see Device ground loss).
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Figure 22. 16-bit SPI interface timing diagram
6.3.2 Serial input communication protocol
SPI communication requires that RSTB = high. SPI communication is accomplished with 16-bit messages. A valid message must start
with the MSB (D15) and end with the LSB (D0) (Table 11). Incoming messages are interpreted according to Table 12. The MSB, D15, is
the watchdog bit (WDIN). Bit D14, Parity check (P), must be set such that the total number of 1-bits in the SPI word is even (P=0 for an
even number of 1-bits and P=1 for an odd number). Bank selection is done by setting bit D13. Bits D12: D10 are used for register
addressing. The remaining ten bits, D9 : D0, are used to configure the device and activate diagnostic and protective functions. Multiple
messages can be transmitted for applications with daisy chaining (or to validate already transmitted data) by keeping the CSB pin at logic
0. Messages with a length different from a multiple of 16 or with a parity error is ignored. The device has thirteen input registers for device
configuration and thirteen output registers containing the fault/device status and settings. Table 12 gives the SI register function
assignment. Bit names with extension “_s” refer to functions that have been implemented independently for each of both channels.
6.3.3 Serial port operation
When Chip Select occurs (1-to-0 transition on the CSB pin), the output register data is clocked out of the SO pin (MSB-first) at the serial
clock frequency (SLCK). Bits at the SI pin are clocked in at the same time. The first sixteen SO register bits are those addressed by the
previous SI word (bit D13, D2…D0 of the STATR_s input register). At the end of the chip select event (0-to-1 transition), the SI register
contents are latched. The second SPI word clocked out of the Serial Output (SO) after the first CSB event represents the initial SO register
contents. This allows daisy chaining and data integrity verification.
The message length is validated at the end of the CSB event (0-to-1 transition). If it is valid (multiples of 16, no parity error), the data is
latched into the selected register. After latch-in, the SO pin is tri-stated and the status register is updated with the latest fault status
information.
6.3.3.1 Daisy chain operation
Daisy-chaining propagates commands through devices connected in series. The commands enter the device at the SI pin and leave it by
the SO pin, delayed by one command cycle of 16 bits. To address a particular device in a daisy chain, the CSB pin of all the devices in
that chain has to be kept low until the SPI message has arrived at its destination. Once the command has been clocked in by the
addressed device, it can be executed by setting CSB=1.
1.
RST
must be in a logic [1] state during data transfer.
2. Data enter the SI
pin
starting with D15
(MSB) and ending with bit
D0.
3. Data are available on the SO
pin
starting with bit 0D15
(MSB) and ending with bit 0
(OD0).
Notes 1. RSTB must be in a logic [1] state during data transfer.
2. Data enter the SI
pin
starting with D15
(MSB) and ending with bit
D0.
3. Data are available on the SO
pin
starting with bit 0D15
(MSB) and ending with bit 0
(OD0).
Notes
CSB
SCLK
SI
SO
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
OD15 OD14 OD13 OD12 OD11 OD10 OD9 OD8 OD7 OD6 OD5 OD4 OD3 OD2 OD1 OD0
51 NXP Semiconductors
20XS4200
Table 11. SI message bit assignment
Bit n° SI Reg. Bit Bit functional description
MSB
.
.
.
.
LSB
D15 Watchdog in (WDIN): state must be alternated at least once within the timeout period
D14 Parity (P) check. P-bit must be set to 0 for an even number of 1-bits and to 1 for an odd number
D13 Selection between SI registers from bank 0 (0= channel 0) and bank 1 (Table 14)
D12 : D10 Register address bits
D9:D0 Used to configure the device and the protective functions and to address the SO registers
Table 12. Serial input register addresses and function assignment
SI
Register
SI Data
D 15 D
14
D
13
D
12
D
11
D
10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
STATR_s WDIN P A00 0 0 0 0 0 0 0 0 0 SOA2 SOA1 SOA0
PWMR_s WDIN P A00010 ON_s PWM7_s PWM6_s PWM5_s PWM4_s PWM3_s PWM2_s PWM1_s PWM0_s
CONFR_s WDIN P A00100OS_dis_s OLON_dis_
s
OLOFF_dis
_s DIR_dis_s SR1_s SR0_s DELAY2_s DELAY1_s DELAY0_s
OCR_s WDIN P A01000HOCR_s PR_s Clock_int_s CSNS_ratio
_s tOCH_s tOCM_s OCH_s OCM_s OCL_s
RETRY_s WDIN P A01010 OFP_s 0 0 0 (47) Auto_period1
_s
Auto_period0
_s
Retry_unlim
ited_s retry_s
GCR WDIN P 0 1 1 0 0 PWM_en_
1PWM_en_0 PARALLEL T_H_en WD_dis VDD_FAIL_en CSNS1_en CSNS0_en OV_dis
CALR_s WDIN P A01 1 1 0 1 0 1 0 1 1 0 1 1
contents
after reset* 0 X 0 X X X 0 0 0 0** 0 0 0 0 0 0
* = RSTB = 0 or VDD(FAIL) after VDD = 5.0 V or POR
** = except bit D6 (PARALLEL) of the GCR register that is saved when VDD(FAIL) occurs, provided VDD = 5.0 V and VDD_FAIL_EN = 1 before
X = register address, P = parity bit
Notes
47. Bit D4 of RETRY_s Serial Input register
MC20XS4200FK = 0
MC20XS4200BFK and MC20XS4200BAFK= CONF_SPI_s
Setting bit D4 to 0 (CONF_SPI_s=0) will configure the overcurrent profile as the CONF pin.
Setting bit D4 to 1 (CONF_SPI_s=1) will configure the overcurrent profile as the opposite of CONF pin.
After device reset, the overcurrent profile is defined by the CONF input pin. The SPI-SO CONF bit reporting shall combine external hardware
configuration and SPI setting.
NXP Semiconductors 52
20XS4200
6.3.4 SI register addressing
The address in the title of the following sections (A0xxx) refer to bits D[13:10] of the SPI word required to address the associated SI
register. Bit A0 = D13 selects between registers of bank 0 and bank 1 (Table 14). The function assignment of register bits D[8:0] is
described in the associated section. The “_s” behind a register name indicates that the variable applies to the register contents of both
banks.
Table 13. Serial output register bit assignment
bits D13, D2,
D1, D0 of the
Previous
STATR
SO Returned Data
S
O
A
3
S
O
A
2
S
O
A
1
S
O
A
0
OD
15
OD
14
OD
13
OD
12
OD
11
OD
10
O
D9 OD8 OD7 OD6 OD5 OD4 OD3 OD2 OD1 OD0
STATR 0 0 0 0 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM OV UV POR R_FUL
L1
R_FUL
L0 FAULT1 FAULT0 OUT1 OUT0
FAULTR
_s A00 0 1 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM OTW 0 0 OLON_
s
OLOFF
_s OS_s OT_s SC_s OC_s
PWMR_
sA00 1 0 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM ON_s PWM
7_s
PWM6_
s
PWM5_
s
PWM4_
sPWM3_s PWM2_s PWM1_s PWM0_s
CONFR
_s A00 1 1 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM OS_d
is_s
OLO
N_dis
_s
OLOFF
_dis_s
DIR_dis
_s SR1_s SR0_s DELAY2_s DELAY1_s DELAY0_s
OCR_s A01 0 0 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM HOC
R_s PR_s Clock_i
nt_s
CSNS_
ratio_s tOCH_s tOCM_s OCH_s OCM_s OCL_s
RETRY
R_s A01 0 1 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM OFP R3 R2 R1 R0 Auto_period1
_s
Auto_period0_
s
Retry_unli
mited_s retry_s
GCR 0 1 1 0 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM
PWM
_en_
1
PWM
_en_
0
PARAL
LLEL T_H_en WD_dis VDD_Fail_en CSNS1_en CSNS0_en OV_dis
DIAGR
(48) 0 1 1 1 WDI
NPF SOA
3
SOA
2
SOA
1
SOA
0NM CON
F1
CON
F0 ID1 ID0 IN1 IN0 CLOCK_fail CAL_fail1 CAL_fail0
contents
after
reset or
failure*
N/
A
N/
A
N/
A
N/
A0 0 0 0 0 0 0 0 0 0** 0*** 0 0 0 0 0
* = RSTB = 0 or VDD(FAIL) after VDD = 5.0 V, or POR
** = except bit D6 (PARALLEL) of the GCR register that is saved when VDD(FAIL) occurs provided VDD = 5.0 V and VDD_Fail_en = 1 before
*** = except bit D7 (POR) of the STATR register that is saved when VDD(FAIL) occurs after VDD = 5.0 V and VDD_Fail_en = 1 (fail-safe mode)
x = register address, PF = parity Fault
Notes
48. DIAGR Serial Output register bits D5 and D6 for product identification will report: MC20XS4200FK and MC20XS4200BFK:01,
MC20XS4200BAFK:00
Table 14. Value of bit A0 required for addressing register Banks 0 or 1
Value A0 (D13) Bank
0 0 = channel 0 (default)
1 1 = channel 1
53 NXP Semiconductors
20XS4200
6.3.5 Address A0000 Status register (STATR_s)
To read back the contents of any of the 13 SO registers, bits D[13:10] of the channel’s SI STATR register must be set to A0000 and bits
D[2:0] in the same SPI word to the address of the desired SO register. The SO registers thus addressed are: STATR, FAULTR_s,
PWMR_s, CONFR_s, OCR_s, RETRY_s, GCR, and DIAGR (Table 13).
6.3.6 Address A0001— PWM control register (PWMR_s)
The PWMR_s register contents determines the value of the PWM duty cycle at the output (Table 12), both for internal and external clock
signals.
Bit D8 must be set to 1 to activate this function. The desired value of duty cycle is obtained by setting Bits D7:D0 to one of the 256 levels
as shown in Table 7.To start the PWM function at a known point in time, the PWM_en_s bit (both in the GCR register) must be set to 1.
6.3.7 Address A0010— Channel configuration register (CONFR_s)
The CONFR_s is used to select the appropriate value of slew rate and turn-ON delay. The settings of Bits D[8:6] determine the activation
of openload and short-circuit (to VPWR) detection. Bit D13 ( = A0) of the incoming SPI word determines which of both CONFR registers is
addressed (Table 14).
Setting bit D8 (OS_dis_s) to logic [1] disables detection of short-circuits between the channel’s output pin and the VPWR pin. The default
value [0] enables the feature.
Setting bit D7 (OLON_dis_s) to logic [1] disables detection of openload in the ON state for the selected channel. The default value [0]
enables this feature (Table 15).
Setting bit D6 (OLOFF_dis_s) to logic [1] disables detection of openload in the OFF state. The default value [0] enables the feature, see
Table 15.
Setting bit D5 (DIR_DIS_s) to logic [0] enables direct control of the selected channel. Setting bit D5 to logic [1] disables direct control. In
that case, the channel state is determined by the settings of the internal PWM functions.
D4:D3 bits (SR1_s and SR0_s) control the slew rate at turn on and turn off (Table 16). The default value ([00]) corresponds to the medium
slew rate. Rising and falling edge slew rates are identical.
Delaying a channel’s turn-on instant with respect to the other is accomplished by setting bits D2 : D0 of the PWMR_s register to the
appropriate values. Switch On is delayed by the number of (internal/external) clock periods shown in Table 8. Refer to the section
Programmable PWM module.
6.3.8 Address A0100 Overcurrent protection configuration register (OCR_s)
The contents of the OCR_s registers determines operation of overcurrent, current sensing, and PWM related functions. For each load
type (bulb or DC motor), a different kind of overcurrent profile exists (see Overcurrent protection profile for bulb applications). For lighting
mode, the overcurrent profile is defined by three different thresholds each of which is active over a dedicated time slot. These thresholds
Table 15. Selection of openload detection features
OLON_dis_s
(D7: On state)
OLOFF_dis_s
(D6: Off state) Selected openload detection function
0 0 both enabled (default)
0 1 OFF state detection disabled
1 0 ON state detection disabled
1 1 Both disabled
Table 16. Slew rate selection
SR1_s (D4) SR0_s (D3) Slew rate
0 0 medium (default)
0 1 low
1 0 high
1 1 medium SR <SR< high SR
NXP Semiconductors 54
20XS4200
are called the higher (=I_OCH), the middle (=I_OCM) and the lower (=I_OCL) threshold. The DC motor profile only has two thresholds (I_OCH
and I_OCL).
Each threshold can be set to two different values, except I_OCL that can be set to three different values (I_OCL1, I_OCL2, I_OCL3). Setting
the low-current sense ratio (CSR1) reduces the values of all the overcurrent thresholds by a factor of three. The terminology is defined as
follows: I_OCxy_z stands for overcurrent threshold x (x=I_OCH, I_OCM or I_OCL) that can be set to two or three different values, selected by
y (y=1, 2, (or 3)). The previously selected current sense ratio (z=0 for CSR0 and z=1 for CSR1) further determines the shape of the
applicable overcurrent protection profile (see I_OCH1_0).
Setting bit D8 (HOCR_s) to 0 activates overcurrent level I_OCL1, the highest of the 3 levels, regardless the value of the D0 bit. Setting
HOCR to 1 activates the medium level I_OCL2 when D0 = 0, and the lowest level I_OCL3 when D0 = 1 (Table 21). When overcurrent
windows are active, current sensing is not available.
Bit D7 (PR_s) controls which of two divider values are used to create the PWM frequency from the external clock. Setting bit D7 to 1
causes the external clock to be divided by 512. When PR_s = 0, the divider is 256.
Setting bit D6 (Clock_int_s) activates the internal clock of the selected channel. The default value [0] configures the PWM module to use
an external clock signal.
Setting bit D5 (CSNS_ratio_s) to 1 activates the “low- current” current sense ratio CSR1, optimal for measuring currents in the lowest
range. The default value [0] activates the “high-current” sensing ratio CSR0 (Table 17).
The width of the overcurrent protection window(s) is controlled by bits D4 and D3 (tOCH_s and tOCM_s), and also depends on the load type
configuration as shown in Table 18. (CONF[x]=0: bulb, CONF[x]=1: DC motor).
The lighting profile has two adjacent windows the width of which is compatible with typical bulb inrush current profiles. The width of the
first of these windows is either tOCH1 or tOCH2. The width of the second window is either tOCM1_L or tOCM2_L (see Table 18).
The DC motor profile has one overcurrent window defined by two different thresholds (I_OCH and I_OCL), as illustrated by Figure 6. In this
case, the maximum overcurrent duration is selected among four values: tOCM1_M, tOCM2_M, tOCH1 and tOCH2.
Bit D2 (OCH_s) selects the value of the higher (upper) overcurrent threshold among two values. The default value [0] corresponds to the
highest value, and [1] to the lowest value (Table 19).
Bit D1 (OCM_s) sets the value of the middle overcurrent threshold. The default value [0] corresponds to the highest value, and [1] to the
lowest value (Table 20). In DC motor mode, there is no middle overcurrent threshold and the value of this bit has no influence.
Table 17. Current sense ratio selection
CSNS_ratio_s (D5) Current sense ratio
0CRS0 (default)
1CRS1
Table 18. Dynamic overcurrent threshold activation times for bulb and DC motor profiles
CONF[x] tOCH_s (D4) tOCM_s (D3) Selected threshold activation times
0 0 0 tOCH1 and tOCM1_L
0 0 1 tOCH1 and tOCM2_L
0 1 0 tOCH2 and tOCM1_L
0 1 1 tOCH2 and tOCM2_L
1 0 0 tOCM1_M
1 0 1 tOCM2_M
1 1 0 tOCH1
1 1 1 tOCH2
Table 19. OCH upper current threshold selection
OCH_s (D2) I_OCH current threshold
0 I_OCH1_s (default)
1 I_OCH2_s
55 NXP Semiconductors
20XS4200
Bit D0 (OCL_s) and D8 (HOCR) set the value of the lowest overcurrent threshold, as shown in Table 21.
6.3.9 Address A0101 Auto-retry register (RETRYR_s)
The RETRYR_s register contents are used to set the different auto-retry options (Auto-retry) and the offset compensation feature of the
current sense function.
Setting bit D8 to 1(OFP = 1) causes the random offset current (and the overcurrent profile on the 20XS4200B) to be added to the sensed
current (pin CSNS). Setting bit D8 to 0 results in the offset current being subtracted from the sensed current.
Setting D3 and D2 (Table 22) to the appropriate values allows selection of the value of the auto-retry period among four predefined values.
Setting bit D1 to 1 (RETRY_unlimited_s = 1) results in an unlimited number of auto retries, provided the auto-retry function wasn’t
disabled.
Setting bit D1 to 0 (RETRY_unlimited_s = 0) limits the amount of auto retries to 16 (see Amount of auto-retries). The value of the counter
neither resets after delatching, nor when the fault disappears.
Setting bit D0 (retry_s) enables or disable auto-retry, accordingly to setting of the CONF pin.
For CONF[x] = 0 (Lighting profile configured), setting retry_s = 1 disables auto-retry. The default value [0] enables it.
For CONF[x] = 1 (DC motor), setting retry_s = 1 enables auto-retry. The default value [0] disables it.
For details, see Table 12.
6.3.10 Address 0110 global configuration register (GCR)
The GCR register is used to activate various functions and diagnostic functions.
Setting bits D8 = 1 and D7 = 1 of the GCR register (PWM_en_1 and PWM_en_0) activates the internal PWM function of both channels
simultaneously according to the values of duty cycle and turn-on delays in the PWMR_s and CONFR_s registers (Table 7). However, this
option should never be used to drive channels in parallel. To increase the load current capability, the instructions in the section Parallel
operation should be followed.
Setting bit D6 sets parallel mode (improved switching synchronization between both channels). Only configuration and diagnostic
information of bank 0 (A0 = 0) is available in this setting (see Parallel operation).
Table 20. OCM current threshold selection
OCM_s (D1) OCM current threshold
0 I_OCM1_s (default)
1 I_OCM2_s
Table 21. OCL current threshold selection
HOCR (D8) OCL_s (bit D0) Selected OCL current
level
0 0 I_OCL1_x(default)
0 1 I_OCL1_x
1 0 I_OCL2_x
1 1 I_OCL3_x
Table 22. Auto-retry period
Auto_period1_s
(D3)
Auto_period0_s
(D2) Retry period
0 0 tAUTO_00 (default)
0 1 tAUTO_01
1 0 tAUTO_10
1 1 tAUTO_11
NXP Semiconductors 56
20XS4200
Setting Bit D5 (T_H_en = 1) activates Track & Hold current sensing mode. When T&H is activated, the value of the channel’s load current
is kept available after turn-off.
Setting bit D4 (WD_dis = 1) disables the SPI watchdog function. A logic [0] enables the SPI watchdog.
Setting bit D3 (VDD_FAIL_EN = 1) enables or disable the VDD failure detection. When enabled, the device enters Fail-safe mode after VDD
< VDD(FAIL).
Bits D6 (parallel bit), D2 and D1 set the different (current) sensing options. The CSNS pin outputs a scaled value of the selected channel’s
load current, the sum of both currents or the die temperature, according to the values in Table 23. When the highest overcurrent range is
selected (bit D8 of the OCR register, HOCR = 0), the device’s CSNS pin only outputs scaled values of a single channel’s load current.
Setting bit D0 (OV_dis = 1 of the GCR reg.) disables overvoltage protection. Setting this bit to [0] (default), enables it.
6.3.11 Address A0111 Calibration register (CALR_s)
The internal clock frequency of both channels can be calibrated independently. Setting the appropriate calibration word in the CALR_s
register (Table 12) puts the device in calibration mode. The default switching frequency is 400 Hz, but can be changed by applying a
specific calibration procedure. See Internal clock and internal PWM (Clock_int_s bit = 1).
6.3.12 SO register addressing
The device has two register banks, each of which has five channel-specific SO registers containing the channel’s configuration and
diagnostics status (Table 13). These registers are FAULTR_s, PWMR_s, CONFR_s, OCR_s, and RETRYR_s.
Global fault and diagnostic information are contained in the following common SO-registers: STATR, GCR, and DIAGR. All the SO
registers can be addressed by setting the appropriate bits in the SI-STATR_s register (bits D13, D2, D1, D0). The value of the bit D13
determines which register bank is addressed (bank 0 or 1). Data is made available the next cycle after register addressing.
The output status register correctly reflects the contents of the addressed SO register as long as CSB is low, except when the data from
the previous SPI cycle was invalid. In this case, the device outputs the contents of the last successfully addressed SO register.
6.3.13 Serial output register assignment
The output register shifted out through the SO pin is previously addressed by bits D13, D2, D1, and D0 of the STATR_s SI register.
Table 13 gives the functional assignment (OD15 : OD0) of each of the thirteen SO register bits, preceded by the address of the SI
STATR_s required to address it.
Bit OD15 (MSB) reports the state of the watchdog bit from the previously clocked-in SPI message.
Bit OD14 (PF, active 1) reports an eventual parity error on the previously transferred SI register contents.
Bits OD13:OD10 echo the state of bits D13, D2, D1, and D0 (SOA3: SOA0) of the previously received SI word.
Bit OD9: Normal mode (NM) reports the device state. In Normal mode, NM = 1.
Bits OD8 : OD0 are the contents of the selected SO register (addressed by bit D13 and bits D2 : D0 of the previous SI STATR register).
Table 23. Current sense pin functionality selection
D8 D6 D2 D1 Activated function at CSNS pin
x x 0 0 disabled
0 x 0 1 current sensing on channel 0
0 x 1 0 current sensing on channel 1
0 x 1 1 temperature sensing
1 0 0 1 current sensing on channel 0
1 x 1 0 current sensing on channel 1
1 x 1 1 temperature
1 1 0 1 current sensing summed currents of channels 0 and 1
57 NXP Semiconductors
20XS4200
6.3.14 Previous address SOA3 : SOA0 = 0000 (STATR)
When bits SOA3…SOA0 of the previously received SI STATR_s register = 0000, the SO STATR register is addressed. Bits OD8: OD0
contain the relevant channel information: Faults, channel state, and supply voltage errors.
Bits OD8: OD6 report failures common to both channels
Bit OD8 = OV = 1: overvoltage fault
Bit OD7 = UV = 1: undervoltage fault
Bit OD6 = POR = 1: power-on reset (POR) has occurred
Power-ON-Reset occurs when VPWR<VSUPPLY(POR). The OV, UV, and POR bits can be reset by a reading the STATR register.
Bits OD5: OD4 (RFULL) of the STATR register are set to logic [1] when the auto-retry counter of the corresponding channel is full. These
bits are automatically cleared by resetting the corresponding auto-retry counter (see Reset of the auto-retry counter)
Bits OD3 (FAULT1) and OD2 (FAULT0) are set to logic [1] when channel-specific (non-generic) faults are detected:
FAULTs = OC_s + SC_s + OT_s + OS_s + OLOFF_s + OLON_s.
The FAULTs bit can be reset by reading out the common STATR register or the individual FAULTR_s register (provided the fault has
disappeared).
Bits OD1: OD0 (OUT1 and OUT0) report the channel’s switching state (ON/OFF) in real time.
6.3.14.1 Previous address SOA3 : SOA0 = A0001 (FAULTR_s)
Bit OD8 of both Fault registers (FAULTR_s) is set simultaneously when the overtemperature prewarning (OTW) condition occurs, but the
channels are not switched off (temperature of the common GND pin (#14)> TOTWAR).
Reading either FAULT register clears both OTW bits.
Bits OD5: OD0 of the Fault register (FAULTR_s) report the faults that occurred on the channel previously selected by bit SOA3 = A0
(Table 14).
bit OD0 = OC_s: overcurrent fault on channel s,
bit OD1 = SC_s: severe short-circuit on channel s,
bit OD3 = OS_s: output shorted to VPWR on channel s,
bit OD4 = OLOFF_s: OpenLoad in OFF state on channel s,
bit OD5 = OLON_s: OpenLoad in ON state on channel s. (The threshold value above which this fault is triggered depends on the
selected current sense ratio; for CSR0 @ 150 mA typ. and for CSR1 @ 7.0 mA typ.).
The Fault Status pin (FSB) is set to 0 (active Low) upon occurrence of any of the above mentioned faults. Latched faults can only be
delatched by the procedure described in Fault delatching.
The FAULTR_s register is reset when it is read out, provided that the failure cause has disappeared and latched faults have been
delatched.
6.3.15 Previous address SOA3 : SOA0 = A0010 (PWMR_s)
The device outputs the contents of the addressed PWMR_s register (A0 = 0 for bank 0 and A0 = 1 for bank 1).
6.3.16 Previous address SOA3 : SOA0
= A0011 (CONFR_s)
The device outputs the contents of the addressed CONFR_s register (A0 = 0 for bank 0 and A0 = 1 for bank 1).
6.3.17 Previous address SOA3 : SOA0 = A0100 (OCR_s)
The device outputs the contents of the addressed OCR_s register (A0 = 0 for bank 0 and A0 = 1 for bank 1).
6.3.18 Previous address SOA3 : SOA0 = A0101 (RETRYR_s)
The device outputs the contents of the addressed RETRYR_s register (A0 = 0 for bank 0 and A0 = 1 for bank 1).
Bit OD8 contains the value of the OFP bit (offset positive), used for current sense offset compensation. Bits OD7: OD4 contain the real
time value of the auto-retry counter. When these bits contain [0000], either auto-retry has not been enabled or Auto-retry did not occur.
NXP Semiconductors 58
20XS4200
6.3.19 Previous address SOA3 : SOA0 = 0110 (GCR)
The device outputs the contents of the general configuration register (GCR) common to both channels.
6.3.20 Previous address SOA3 : SOA0
= 0111 (DIAGR_s)
Bit OD8 ( Ch. 1 = CONF1) and bit OD7 ( Ch. 0 = CONF0) of the DIAGR_s register contain the values of the channels’ configuration bits
(0 = bulb, 1 = DC motor).
For 20XS4200FK and 20XS4200BFK
Bits OD6:OD5 contain the product identification (ID) number, equal to 01 for the present dual 20 mΩ product.
For 20XS4200BAFK
Bits OD6:OD5 contain the product identification (ID) number, equal to 00 for the present dual 20 mΩ product.
Bits OD4:OD3 report the logic state of the direct inputs IN[1:0] in real time (1 = On, 0 = OFF), OD4 = Ch. 1, OD3 = Ch. 0.
Bit OD2 reports a logic [1] in case an external clock error occurred (if an external clock was selected by Clock_int = 0).
Bit OD1:OD0 report logic [1] in case a calibration failure occurred during calibration of a channel’s internal clock period.
59 NXP Semiconductors
20XS4200
7 Typical applications
Figure 23 shows the electrical circuit of a typical truck application. As an example, an external circuit is added that takes over load
control in case Fail-safe mode is activated (FSOB goes low). This circuit allows keeping full control of both channels in case of SPI failure.
Figure 23. Typical application with two different load types
VDD
VDD
GND
MCU
Voltage regulator
VPWR
HS0
HS1
VPWR
VDD
CLOCK
FSB
IN0
SCLK
CSB
SI
SO
RSTB
IN1
100 nF
I/O
I/O
SCLK
CSB
SI
SO
2.0 k
LOAD 0
LOAD 1
CSNS
A/D
VDD
VDD
VPWR
VDD
22 nF
22 nF
1.0 k2
External Control Circuitry
VPWR
10 µF
100 nF
10 µF
100 nF
10 k
10 k
FSOB
10 k
VPWR
100 k
M
CONF1
CONF0
direct controls (pedals, handles, etc.)
GND
SYNC
I/O
I/O
22 nF
10 k
20XS4200
8.0 k2
75 k
100 nF 1.0 µF
NXP Semiconductors 60
20XS4200
.
Figure 24. Two channels in parallel/recommended external current sense circuit
VDD
GND
MCU
HS0
HS1
VPWR
VDD
CLOCK
FSB
IN0
SCLK
CSB
SI
SO
RSTB
IN1
100 nF
I/O
I/O
SCLK
CSB
SI
SO
LOAD
CSNS
A/D
VDD
VDD
VPWR
VDD
22 nF
22 nF
2.0 k
VPWR
100 nF
10 k
FSOB
10 k
VPWR
100 k
M
CONF1
CONF0
direct controls (pedals, handles,...)
GND
SYNC
I/O
I/O
10 k
20XS4200
1.0 k2
75 k
75 k
1.0 µF
External Control Circuitry
VDD
Voltage regulator
VPWR
10 µF
100 nF
10 µF
100 nF
61 NXP Semiconductors
20XS4200
8 Packaging
8.1 Soldering information
The FK package is a surface mount power package (PQFN), intended to be soldered directly on the printed circuit board.
The AN2467 provides guidelines for Printed Circuit Board design and assembly.
8.2 Package mechanical dimensions
Package dimensions are provided in package drawings. To find the most current package outline drawing, go to www.nxp.com and
perform a keyword search for the drawing’s document number.
Table 24. Packaging information
Package Suffix Package outline drawing number
23-pin PQFN FK 98ASA00428D
NXP Semiconductors 62
20XS4200
.
63 NXP Semiconductors
20XS4200
NXP Semiconductors 64
20XS4200
65 NXP Semiconductors
20XS4200
NXP Semiconductors 66
20XS4200
67 NXP Semiconductors
20XS4200
NXP Semiconductors 68
20XS4200
69 NXP Semiconductors
20XS4200
NXP Semiconductors 70
20XS4200
9 Revision history
Revision Date Description of Changes
1.0 5/2012 Initial release
2.0 6/2012 Updated values in Table 4, Static electrical characteristics
3.0 5/2013
Grammatical accuracy and form consistency changes made. No changes to content.
Revised back page. Updated document properties. Added SMARTMOS sentence to first
paragraph.
4.0 8/2013
Added a table
Introduction of parameters related to 20XS4200 device (Table 1).
Removed RDSON values at 1.0 A.
Rectification of the inversion between ∆tDLY values at slow and medium slew rate.
Added the 20XS4200 to the Systematic offset error (see Current sense errors) parameter.
5.0 11/2013
Removed EK package information
Removed all references to the SOIC package
Added 20XS4200BAFK to the ordering information
Introduction of parameters related to 20XS4200BAFK device
Removed Ecl_rep energy values
Update Ecl_sing value
6.0 5/2018
Updated as per CIN 201805019I
Changed steady state current value from 3.0 to 4.4 A listed under features on page 1
Updated IHS[0:1] value in Table 3 (changed 3.0 to 4.4)
Added clarification for diagnostic range to Table 5
Updated load dump duration (changed 500 ms to 350 ms) and changed VPWR from 14 V to 28 V in
Table 3
Updated Track & Hold current sensing mode
Typo correction in Table 4 (corrected current limit range for ESR0_ERR)
Information in this document is provided solely to enable system and software implementers to use NXP products.
There are no expressed or implied copyright licenses granted hereunder to design or fabricate any integrated circuits
based on the information in this document. NXP reserves the right to make changes without further notice to
anyproducts herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for
any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation, consequential or incidental damages.
"Typical" parameters that may be provided in NXP data sheets and/or specifications can and do vary in different
applications, and actual performance may vary over time. All operating parameters, including "typicals," must be
validated for each customer application by the customer's technical experts. NXP does not convey any license under
its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which
can be found at the following address:
http://www.nxp.com/terms-of-use.html.
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© NXP B.V. 2018.
Document Number: MC20XS4200
Rev. 6.0
5/2018