2SK971 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1. Gate 2. Drain (Flange) 3. Source 1 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit -------------------------------------------------------------------------------------- Drain to source voltage VDSS 60 V -------------------------------------------------------------------------------------- Gate to source voltage VGSS 20 V -------------------------------------------------------------------------------------- Drain current ID 15 A -------------------------------------------------------------------------------------- Drain peak current ID(pulse)* 60 A -------------------------------------------------------------------------------------- Body to drain diode reverse drain current IDR 15 A -------------------------------------------------------------------------------------- Channel dissipation Pch** 40 W -------------------------------------------------------------------------------------- Channel temperature Tch 150 C -------------------------------------------------------------------------------------- Storage temperature Tstg -55 to +150 C -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK971 Table 2 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions -------------------------------------------------------------------------------------- Drain to source breakdown voltage V(BR)DSS 60 -- -- V ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- Gate to source breakdown voltage V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 -------------------------------------------------------------------------------------- Gate to source leak current IGSS -- -- 10 A VGS = 16 V, VDS = 0 -------------------------------------------------------------------------------------- Zero gate voltage drain current IDSS -- -- 250 A VDS = 50 V, VGS = 0 -------------------------------------------------------------------------------------- Gate to source cutoff voltage VGS(off) 1.0 -- 2.0 V ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- Static drain to source on state resistance RDS(on) -- 0.055 0.065 ID = 8 A, VGS = 10 V * -------------- --------------------- 0.075 ID = 8 A, VGS = 4 V * 0.095 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| 7 12 -- S ID = 8 A, VDS = 10 V * -------------------------------------------------------------------------------------- Input capacitance Ciss -- 860 -- pF VDS = 10 V, VGS = 0, ---------------------------------------------------------------- Output capacitance Coss -- 450 -- pF f = 1 MHz ---------------------------------------------------------------- Reverse transfer capacitance Crss -- 140 -- pF -------------------------------------------------------------------------------------- Turn-on delay time td(on) -- 10 -- ns ---------------------------------------------------------------- Rise time tr -- 70 -- ns ID = 8 A, VGS = 10 V, RL = 3.75 ---------------------------------------------------------------- Turn-off delay time td(off) -- 180 -- ns ---------------------------------------------------------------- Fall time tf -- 120 -- ns -------------------------------------------------------------------------------------- Body to drain diode forward voltage VDF -- 1.3 -- V IF = 15 A, VGS = 0 -------------------------------------------------------------------------------------- Body to drain diode reverse recovery time trr -- 135 -- ns IF = 15 A, VGS = 0, diF/dt = 50 A/s -------------------------------------------------------------------------------------- * Pulse Test 2SK971 Maximum Safe Operation Area Power vs. Temperature Derating 500 300 ar ea (o n) S D O is pe lim rat ite ion d in by th R is ra s tio n (T = 25 ot) C Sh Drain Current ID (A) pe 3 C 1.0 0 50 100 0.5 0.1 150 Case Temperature TC (C) 4V 5V 12 3.0 V 8 4 VGS = 2.5 V 1.0 16 6 2 4 8 10 Drain to Source Voltage VDS (V) 10 30 100 VDS = 10 V Pulse Test 12 8 4 75C 0 3 Typical Transfer Characteristics Pulse Test 3.5 V 0.3 20 Drain Current ID (A) 16 10 V ) Ta = 25C Drain to Source Voltage VDS (V) Typical Output Characteristics 20 Drain Current ID (A) O s 0 (1 s m ms 10 = 10 10 DC 1 20 30 10 40 100 PW Channel Dissipation Pch (W) 60 0 -25C TC= 25C 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK971 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 1.6 20 A 1.2 0.8 10 A 0.4 0 ID = 5 A 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 2.0 Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 10 V 0.05 0.02 0.01 0.005 1 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 0.16 ID = 10 A 0.08 0.04 5A 0 -40 VGS = 4 V VGS = 10 V 5A 10 A 20 A 0 40 120 80 Case Temperature TC (C) 2 5 20 50 10 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Pulse Test 0.12 VGS = 4 V 0.1 Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 160 50 20 VDS = 10 V Pulse Test -25C TC = 25C 10 75C 5 2 1.0 0.5 0.2 0.5 1.0 10 5 2 Drain Current ID (A) 20 2SK971 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 500 VGS = 0 f = 1MHz 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 Ciss 1000 Coss 300 Crss 100 30 10 0.5 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 0 50 Switching Characteristics 80 16 25 V 60 10 V VDS 40 VGS 20 0 12 VDD = 50 V ID = 15 A 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 8 4 0 40 500 Switching Time t (ns) 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 VDD = 50 V 10 20 50 30 40 Drain to Source Voltage VDS (V) td (off) 200 tf 100 50 tr VGS = 10 V PW = 2s, duty < 1 % 20 td (on) 10 5 0.2 0.5 10 1.0 5 2 Drain Current ID (A) 20 2SK971 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 10 V 15 V 12 5V 8 VGS = 0, - 5 V 4 Normalized Transient Thermal Impedance s (t) 0 0.4 1.2 0.8 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25C D=1 0.5 0.3 0.2 0.1 0.05 0.02 ch-c (t) = S (t) * ch-c ch-c = 3.13C/W, TC = 25C PDM 0.1 0.03 0.01 10 e 1 uls 0.0 ot P h 1S 100 T 1m 10 m Pulse Width PW (s) 100 m D = PW T PW 1 10 2SK971 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf