Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
123
2
1
3
TO–220AB
1. Gate
2. Drain
(Flange)
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Drain to source voltage VDSS 60 V
———————————————————————————————————————————
Gate to source voltage VGSS ±20 V
———————————————————————————————————————————
Drain current ID15 A
———————————————————————————————————————————
Drain peak current ID(pulse)*60 A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR 15 A
———————————————————————————————————————————
Channel dissipation Pch** 40 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
*PW ≤10 µs, duty cycle ≤1 %
** Value at TC= 25 °C
2SK971
Silicon N-Channel MOS FET
Table 2 Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown V(BR)DSS 60 — — V ID= 10 mA, VGS = 0
voltage
———————————————————————————————————————————
Gate to source breakdown V(BR)GSS ±20 — — V IG= ±100 µA, VDS = 0
voltage
———————————————————————————————————————————
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID= 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state RDS(on) — 0.055 0.065 ΩID= 8 A, VGS = 10 V *
resistance ——————— ——————————–
0.075 0.095 ID= 8 A, VGS = 4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs| 7 12 — S ID= 8 A, VDS = 10 V *
———————————————————————————————————————————
Input capacitance Ciss — 860 — pF VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance Coss — 450 — pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss — 140 — pF
———————————————————————————————————————————
Turn-on delay time td(on) — 10 — ns ID= 8 A, VGS = 10 V,
————————————————————————————————
Rise time tr— 70 — ns RL= 3.75 Ω
————————————————————————————————
Turn-off delay time td(off) — 180 — ns
————————————————————————————————
Fall time tf— 120 — ns
———————————————————————————————————————————
Body to drain diode forward VDF — 1.3 — V IF= 15 A, VGS = 0
voltage
———————————————————————————————————————————
Body to drain diode reverse trr — 135 — ns IF= 15 A, VGS = 0,
recovery time diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
2SK971
50 1000 Case Temperature TC (°C) 150
20
Channel Dissipation Pch (W)
40
60 Power vs. Temperature Derating Maximum Safe Operation Area
Drain Current ID (A)
0.3 1.0 3
10
30
100
10
300
500
Drain to Source Voltage VDS (V)
0.1 100
3
30
0.5
1.0
100 µs
PW = 10 ms (1 Shot)
DC Operation (T
C
= 25°C)
Ta = 25°C
1 ms
10 µs
Operation in this area
is limited by RDS (on)
Typical Output Characteristics
6
Drain to Source Voltage VDS (V)
842 10
Drain Current ID (A)
0
4
8
12
16
0
20
VGS = 2.5 V
Pulse Test
10 V
4 V
5 V 3.5 V
3.0 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
42105
4
8
12
16
20
0
Drain Current ID (A)
TC= 25°C
75°C
VDS = 10 V
Pulse Test
–25°C
2SK971
2SK971
Drain to Source Saturation Voltage
VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
842010
0.8
1.2
1.6
2.0
0
0.4
Pulse Test
ID = 5 A
20 A
10 A
10
Drain Current ID (A)
2052 100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005 50
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
VGS = 4 V
10 V
Pulse Test
80
Case Temperature TC (°C)
120400
0.04
0.08
0.12
0.16
0.20
–40
0160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
RDS (on) (Ω)
ID = 10 A
5 A
20 A
Pulse Test
VGS = 4 V
VGS = 10 V 10 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1.0
0.5
0.2 0.5 1.0 2520
Drain Current ID (A) 10
Forward Transfer Admittance yfs (S)
TC = 25°C
VDS = 10 V
Pulse Test –25°C
75°C
2SK971
1000
500
200
100
50
20
10
0.5 1.0 5 50
Reverse Drain Current IDR (A)
10
220
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
30
10
Capacitance C (pF)
01020 50
Drain to Source Voltage VDS (V)
30
100
40
VGS = 0
f = 1MHz
Ciss
Coss
Crss
100
80
60
40
20
08 24
32
Gate Charge Qg (nc)
16
20
16
12
8
4
0
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
40
ID = 15 A
VDS
VGS
VDD = 50 V
10 V
25 V
VDD = 50 V
25 V
10 V
Switching Characteristics
Switching Time t (ns)
500
200
100
50
20
10
5
0.2 0.5 1.0 2520
Drain Current ID (A) 10
td (off)
tf
tr
VGS = 10 V
PW = 2µs, duty < 1 %
td (on)
2SK971
20
16
12
8
4
0 0.4 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
0.8
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
VGS = 0, – 5 V
Pulse Test
10 V
15 V
5 V
3
1.0
0.3
0.1
0.03
0.01
10 µ1 m 10 m 100 m
Pulse Width PW (s)
100 µ110
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
θch–c (t) = γS (t) · θch–c
θch–c = 3.13°C/W, TC = 25°C
PDM
PW D = PW
T
T
TC = 25°C
D = 1
0.5
0.05
1 Shot Pulse
0.2
0.1
0.02
0.01
2SK971
Vin Monitor
Vout Monitor
RL
50 Ω
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Wavewforms
