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Page <1> V1.025/02/13
High-Speed Switching Diode
Features:
• Fast Switching Speed
• Surface Mount Package Ideally Suited for
Automatic Insertion
• For General Purpose Switching Applications
• High Conductance
Applications:
High speed switching application
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC reverse voltage
Vrrm
Vrms
Vr
75 V
Forward continuous current Ifm 200 mA
Power dissipation Pd225 mW
Operating junction temperature range Tj150 °C
Operating and storage temperature range Tstg -55 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage Vr(br)Ir = 100μA 75 - V
Forward voltage
Vf1
Vf2
Vf3
Vf4
If = 1mA
If = 10mA
If = 50mA
If = 150mA
-
715
855
1,000
1250
mV
Reverse current IrVr = 75V - 2.5 μA
Diode capacitance CdVr = 0V, f = 1MHz - 20 pF
Reverse recovery time trr If = Ir = 10mA
Vr = 5V, Rl=100Ω - 4 ns