MJD2955
MJD3055
COMPLEMENTARY POWER TRANSISTORS
■STMicroelectronics PREFERRED
SALESTYPES
■SURFA CE -M OUNT ING TO-252 (DPAK )
POWER PACKAGE IN TAPE & RE EL
(SUFFIX "T4")
■ELECTRICALLY SIMILAR TO MJE2955T
AND MJE3055T
APPLIC A TION S
■GENE RA L PURP OSE SWITC HING AND
AMPLIFIER
DESCRIP TION
The MJD2955 and MJD3055 form
complementary PNP-NPN pairs. They are
manufactured using Epitaxial Base technology for
cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
February 2002
13
DPAK
TO-252
(S uff ix "T 4 ")
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN MJD3055
PNP MJD2955
VCBO Collector-Base Vo ltage (IE = 0) 70 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 10 A
IBBase Current 6 A
Ptot Total Dissipation at Tc = 25 oC20W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP type voltage and c urrent val ues are negative.
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