PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 54 ... BCP 56 (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BCP 51 BCP 51-10 BCP 51-16 BCP 52 BCP 52-10 BCP 52-16 BCP 53 BCP 53-10 BCP 53-16 BCP 51 BCP 51-10 BCP 51-16 BCP 52 BCP 52-10 BCP 52-16 BCP 53 BCP 53-10 BCP 53-16 Q62702-C2107 Q62702-C2109 Q62702-C2110 Q62702-C2146 Q62702-C2112 Q62702-C2113 Q62702-C2147 Q62702-C2115 Q62702-C2116 B SOT-223 1) C E C For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BCP 51 ... BCP 53 Maximum Ratings BCP 51 Values BCP 52 BCP 53 Unit VCE0 VCER 45 45 60 60 80 100 V Collector-base voltage VCB0 45 60 100 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 124 C1) Ptot 1.5 W Junction temperature Tj 150 C Storage temperature range Tstg Parameter Symbol Collector-emitter voltage RBE 1 k A mA - 65 ... + 150 Thermal Resistance Junction - ambient1) Rth JA 72 Junction - soldering point Rth JS 17 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BCP 51 ... BCP 53 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 45 60 80 - - - - - - 45 60 100 - - - - - - 5 - - - - - - 100 20 A - - 10 A DC characteristics Collector-emitter breakdown voltage BCP 51 IC = 10 mA, IB = 0 BCP 52 BCP 53 V(BR)CE0 Collector-base breakdown voltage IC = 100 A, IB = 0 BCP 51 BCP 52 BCP 53 V(BR)CB0 Emitter-base breakdown voltage IE = 10 A, IC = 0 V(BR)EB0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C ICB0 Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCP 51/BCP 52/BCP 53 BCP 51/BCP 52/BCP 53-10 BCP 51/BCP 52/BCP 53-16 IC = 500 mA, VCE = 2 V hFE Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V V nA - 25 - - 40 63 100 25 - 100 160 - 250 160 250 - VCEsat - - 0.5 VBE - - 1 fT - 125 - V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 3 MHz BCP 51 ... BCP 53 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V DC current gain hFE = f (IC) VCE = 2 V Collector cutoff current ICB0 = f (TA) VCB = 30 V Semiconductor Group 4 BCP 51 ... BCP 53 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 5 NPN Silicon AF Transistors BCP 54 ... BCP 56 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 51 ... BCP 53 (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BCP 54 BCP 54-10 BCP 54-16 BCP 55 BCP 55-10 BCP 55-16 BCP 56 BCP 56-10 BCP 56-16 BCP 54 BCP 54-10 BCP 54-16 BCP 55 BCP 55-10 BCP 55-16 BCP 56 BCP 56-10 BCP 56-16 Q62702-C2117 Q62702-C2119 Q62702-C2120 Q62702-C2148 Q62702-C2122 Q62702-C2123 Q62702-C2149 Q62702-C2125 Q62702-C2106 B SOT-223 1) C E C For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BCP 54 ... BCP 56 Maximum Ratings BCP 54 Values BCP 55 BCP 56 VCE0 VCER 45 45 60 60 80 100 Collector-base voltage VCB0 45 60 100 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 124 C1) Ptot 1.5 W Junction temperature Tj 150 C Storage temperature range Tstg Parameter Symbol Collector-emitter voltage RBE 1 k Unit V A mA - 65 ... + 150 Thermal Resistance Junction - ambient1) Rth JA 72 Junction - soldering point Rth JS 17 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BCP 54 ... BCP 56 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 45 60 80 - - - - - - 45 60 100 - - - - - - 5 - - - - - - 100 20 A - - 10 A DC characteristics Collector-emitter breakdown voltage BCP 54 IC = 10 mA, IB = 0 BCP 55 BCP 56 V(BR)CE0 Collector-base breakdown voltage1) IC = 100 A, IB = 0 BCP 54 BCP 55 BCP 56 V(BR)CB0 Emitter-base breakdown voltage IE = 10 A, IC = 0 V(BR)EB0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C ICB0 Emitter-base cutoff current VEB = 5 V IEB0 DC current gain IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCP 54/BCP 55/BCP 56 BCP 54/BCP 55/BCP 56-10 BCP 54/BCP 55/BCP 56-16 IC = 500 mA, VCE = 2 V hFE Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V V nA - 25 - - 40 63 100 25 - 100 160 - 250 160 250 - VCEsat - - 0.5 VBE - - 1 fT - 100 - V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 3 MHz BCP 54 ... BCP 56 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V DC current gain hFE = f (IC) VCE = 2 V Collector cutoff current ICB0 = f (TA) VCB = 30 V Semiconductor Group 4 BCP 54 ... BCP 56 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 5