©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP100/101/102
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP100
: TIP101
: TIP102
60
80
100
V
V
V
VCEO Collector-Emitter Voltage : TIP100
: TIP101
: TIP102
60
80
100
V
V
V
VEBO Emitter-Base Volta ge 5 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 15 A
IB Base Current (DC) 1 A
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP100
: TIP101
: TIP102
IC = 30mA , IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current: TIP100
: TIP101
: TIP102
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
50
50
50
µA
µA
µA
ICBO Collector Cut-off Current: TIP100
: TIP101
: TIP102
VCE = 60V, IE = 0
VCE = 80V, IE = 0
VCE = 100V, IE = 0
50
50
50
µA
µA
µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 3A
VCE = 4V, IC = 8A 1000
200 20000
VCE(sat) Collector-Emitter Saturation Volt age IC = 3A, IB = 6mA
IC = 8A, IB = 80mA 2
2.5 V
V
VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 8A 2.8 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 0. 1 M H z 200 pF
TIP100/101/102
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP105/106/107
R
110
k
Ω≅
R
20.6
k
Ω≅
Equivalent Circuit
B
E
C
R1 R2
1.Base 2.Collector 3.Emitter
1TO-220
©2001 Fairchild Semiconductor Corporation
TIP100/101/102
Rev. A1, June 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
0.8mA
0.9mA
IB = 1mA
700uA
600uA
500uA
400uA
IB = 300 uA
IB = 200 uA
IB = 100 uA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
0.1 1 10 100
100
1k
10k
Ic = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE( sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1k
10k
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
0.01
0.1
1
10
100
TIP102
TIP101
5ms
100µs
1ms
DC
TIP100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 255075100125150175
0
20
40
60
80
100
120
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP100/101/102
Dimensions in Millimeters
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
