Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2570
Silicon N Channel MOS FET
Low Frequency Power Switching REJ03G1019-0200
(Previous: ADE-208-574)
Rev.2.00
Sep 07, 2005
Features
• Low on-resistance
RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA)
• 2.5 V gate drive devi ces.
• Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1. Source
2. Gate
3. Drain
S
D
G
2
1
3
Note: Marking is “ZL–”
2SK2570
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±10 V
Drain current ID 0.2 A
Drain peak current ID(pulse)*1 0.4 A
Channel dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 20 — — V ID = 10 µA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — 1.0 µA VDS = 20 V, VGS = 0
Gate to source leak current IGSS — — ±5.0 µA VGS = ±6.5 V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 10 µA, VDS = 5 V
— 0.8 1.1 Ω I
D = 100 mA, VGS = 4 V *2
Static drain to source on state
resistance RDS(on) — 1.3 2.2 Ω I
D = 40 mA, VGS = 2.5 V *2
Forward transfer admittance |yfs| 0.22 0.35 — S ID = 100 mA, VDS = 10 V *2
Input capacitance Ciss — 45 — pF
Output capacitance Coss — 33 — pF
Reverse transfer capacitance Crss — 9.6 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 20 — ns
Rise time tr — 60 — ns
Turn-off delay time td(off) — 240 — ns
Fall time tf — 140 — ns
VGS = 5 V, ID = 100 mA,
RL = 100 Ω
Notes: 2. Pulse test
2SK2570
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Typical Output Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Drain Current
Ambient Temperature Ta (°C)
Channel Dissipation Pch (mW)
Maximum Channel Dissipation Curve
11050
0.20
0.16
0.12
0.08
0.04
0246810
0.20
0.16
0.12
0.08
0.04
00.5 1.0 1.5 2.0 2.5
200
150
100
50
050 100 150 200
5
2
1
0.2
0.1
0.5
0.02
0.01
0.05
0.05
0.2 0.5 2 5 20 100
PW =
10 ms
(1 shot)
1 ms
DC Operation
Ta = 25°C
1 shot
V
GS
= 1.6 V
10 V
5 V
2.5 V
2 V
1.8 V Tc = –25°C
75°C
25°C
Pulse Test
V
DS = 10 V
Pulse Test
Operation in
this area is
limited by RDS(on)
0.5
0.4
0.3
0.2
0.1
0246810
5
2
1
0.2
0.5
0.1
ID = 0.2 A
0.1 A
0.05 A
0.01 0.02 0.05 0.1 0.2 0.5
V
GS
= 2.5 V
4 V
Pulse Test Pulse Test
2SK2570
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
D
(A)
Switching Time t (µs)
Switching Characteristics
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
2.5
2.0
1.5
1.0
0.5
Ð40 0 40 80 120 160
0
0.5
0.2
0.1
0.02
0.05
0.01
0.005
ID = 0.2 A
VGS = 2.5 V
4 V
0.05, 0.1, 0.2 A
0.05, 0.1A
1
25°C
Tc = –25°C
75°C
Pulse Test
VDS = 10 V
Pulse Test
0.002 0.005 0.01 0.02 0.05 0.1 0.2
048121620
200
500
100
10
20
50
500
200
50
100
10
20
5
0.05
0.20
0.16
0.12
0.08
0.04
00.4 0.8 1.2 1.6 2.0
1
2
5
0.50.20.1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
VGS = 5 V, VDD = 10 V
PW = 5 µs, duty < 1 %
tf
tr
td(on)
td(off)
VGS = 0
5 V
Pulse Test
2SK2570
Rev.2.00 Sep 07, 2005 page 5 of 6
Vin Monitor
D.U.T.
Vin
5 V
R
L
V
DD
= 10 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Waveform
2SK2570
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
D
eA
AA
b
xSA
M
EH
E
A
A
2
A
1
S
b
A-A Section
b
1
c
1
c
Qc
LL
1
L
P
A
3
Pattern of terminal position areas
I
1
b
2
e
e
1
A
A
1
A
2
A
3
b
b
1
c
c
1
D
E
e
H
E
L
L
1
L
P
x
b
2
e
1
I
1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
Min Nom
Dimension in Millimeters
Reference
Symbol
Max
1.1
0.25
0.42
0.4
0.13
0.11
1.5
0.95
2.8
1.95
0.3
1.3
0.1
1.2
0.5
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.05
SC-59A 0.011g
MASS[Typ.]
MPAK(T) / MPAK(T)V,
MPAK / MPAKV
PLSP0003ZB-A
RENESAS CodeJEITA Package Code Package Name
Ordering Information
Part Name Quantity Shipping Container
2SK2570ZL-TL-E 3000 pcs Taping
2SK2570ZL-TR-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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