A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 10 mA 65 V
BVCER IC = 10 mA RBE = 10 Ω 65 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCB = 50 V 2.5 mA
hFE VCE = 5.0 V IC = 500 mA 15 120 ---
PG
η
ηη
ηC VCC = 50 V POUT = 15 W f = 1025 – 1150 MHz
PIN = 1.5 W
10
35
dB
%
Pulse width = 10 µSec, Duty Cycle = 1 %
NPN SILICON RF POWER TRANSISTOR
MSC1015M
DESCRIPTION:
The ASI MSC1015M is Designed for
Class C, DME/TACAN Applications up
to 1150 MHz.
FEATURES:
• Class C Operation
• PG = 10 dB at 15 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.25 A PEAK
VCB 50 V
PDISS 88 W PEAK
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.0 °C/W
PACKAGE STYLE .280 2L FLG
1 = Collector 2 = Emitter 3 = Base
1
2
3
