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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BCP69 PNP General-Purpose Amplifier Description 4 This device is designed for general-purpose mediumpower amplifiers and switches requiring collector currents to 1.0 A. Sourced from process 77. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method BCP69 BCP69 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage Parameter -20 V VCBO Collector-Base Voltage -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -1.5 A TJ Junction Temperature 150 C -55 to +150 C TSTG Storage Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 www.fairchildsemi.com BCP69 -- PNP General-Purpose Amplifier November 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit 1.0 W Derate Above 25C 8.0 mW/C Thermal Resistance, Junction-to-Ambient 125 C/W Total Device Dissipation Note: 3. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics(4) Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -20 V BVCBO Collector-Base Breakdown Voltage IC = -1.0 mA, IE = 0 -30 V BVEBO Emitter-Base Breakdown Voltage IE = -100 A, IC = 0 -5.0 V VCB = -25 V, IE = 0 -100 nA ICBO Collector-Base Cut-Off Current VCB = -25 V, IE = 0, TJ = 150C -10 A IEBO Emitter-Base Cut-Off Current VEB = -5.0 V, IC = 0 -100 nA IC = -5 mA, VCE = -1.0 V hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) 50 IC = -500 mA, VCE = -1.0 V 85 IC = -1.0 A, VCE = -1.0 V 60 375 IC = -1.0 A, IB = -100 mA -0.5 V Base-Emitter On Voltage IC = -1.0 A, VCE = -1.0 V -1.0 V Ccb Collector-Base Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 30 pF hfe Small-Signal Current Gain IC = -50 mA, VCE = -10 V, f = 20 MHz 2.5 Note: 4. Pulse test: pulse width 300 s, duty cycle 2.0% (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 www.fairchildsemi.com 2 BCP69 -- PNP General-Purpose Amplifier Thermal Characteristics(3) V CESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN 300 V CE = 5.0V 250 1 0.8 125 C 200 0.6 150 25 C - 40 C IC 0.1 1 - COLLECTOR CURRENT (A) 2 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAG E (V) 0.8 - 40 C 25 C 0.6 125 C 0.4 1 10 100 I C - COLLECTOR CURRENT ( mA) 0 0.01 1000 0.8 - 40 C COBO- COLLECTOR-BASE CAPACITANCE (pF) V CB = 2 0V 10 1 0.1 150 Figure 5. Collector Cut-Off Current vs. Ambient Temperature (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 25 C 0.6 125 C VCE = 5.0 V 0.4 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 4. Base Emitter On Voltage vs. Collector Current 100 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 3 1 Figure 3. Base-Emitter Saturation Voltage vs. Collector Current 25 0.1 1 I C - COLLE CTOR CURRENT (A) Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current = 10 1 125 C - 40 C 0.2 50 0 0.01 25 C 0.4 100 Figure 1. Typical Pulsed Current Gain vs. Collector Current I CBO - COLLECTOR CURRENT (nA) = 10 40 f = 1.0 MHz 30 20 10 0 0 10 20 V CB- COLLECTOR-BASE VOLTAGE (V) 30 Figure 6. Collector-Base Capacitance vs. Collector-Base Voltage www.fairchildsemi.com 3 BCP69 -- PNP General-Purpose Amplifier Typical Performance Characteristics V CE = 10V PC[W], POWER DISSIPATION f T - GAIN BANDWIDTH PRODUCT (MHz) 1 .5 250 200 150 100 50 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 0 .5 0 .0 0 25 50 75 100 1 25 1 50 o T a [ C ], A M B IE N T T E M P E R A T U R E Figure 8. Power Dissipation vs. Ambient Temperature Figure 7. Gain Bandwidth Product vs. Collector Current (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 1 .0 www.fairchildsemi.com 4 BCP69 -- PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10 5 GAGE PLANE R0.150.05 R0.150.05 10 TYP 0 0.25 SEATING PLANE 10 5 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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