6L MPS6530 TO-92(72) 60 40 5 50 40 30 10 1 0.5 1 100 5 13 40 120 100 1 25 500 10 MPS6531 TO-92(72) 60 40 5 50 40 60 10 1 0.3 1 100 5 13 90 270 100 1 50 S00 10 MPS6532 TO-92(72) 50 30 5 100 30 30 100 1 0.5 1.2 100 5 13 MPS6564 TO-92(72} 45 5 500 40 25 10 5 05 10 4 27 MPS6565 TO0-92(72) 60 45 4 100 30 40 160 10 10 0.4 10 3.5 200 10 27 MPS6566 TO-92(72) 60 45 4 100 30 100 400 10 10 0.4 10 3.5 200 10 27 NS3903 TO-18 60 40 6 50 30 20 0.1 1 0.2 0.65 O85 10 4 250 10 22st 4 23 (cex) 35 1 1 0.3 0.95 50 6 2 50 150 40 1 30 50 1 15 100 1 NS3904 TO-18 60 40 6 50 30 40 0.1 1 0.2 065 O85 10 4 300 10 2sor 4 23 (Icex) 70 1 1 03 095 50 5 2 100 300 10 1 60 50 1 30 100 1 SE2001 35 20 4 500 15 40 160 10 4 07 10 6 200 10 27 SE6001 40 30 5 500 20 | 50 200 10 10 1 o9* 100| 25 40 30 20 SE6002 40 5 500 20 150 410 10 1 0.9* 100 26 40 30 20 Test Condition: 1. I = 150 mA, Voc = 30V, 2. Ig = 100 2A, Voce = BV, Rg =1ke, 3. Ig = 104A, Voce = 5V, 4. Veco =3V 5. I= 300 2A, Voce = 10V, *VBE(ON) 1g1 = Ipg = 15 mA BW = 15.7 kHz Rg = 10 k2, WB Io =10mA Rg = 5108, f= 1 kHz Ig1 = Iga =1mA (t = ts + tf} NPN Transistors POWER vi Vv, Vv lcex VCEIsat Vv Type Case CENSUS! CEOISUS) reo ima) @ VCE bre _ |c VCE a {sa ) s BE (sat) - Ic ; fr . _ Ic Process No. Style ivi iV} ivi imA} G E Min Max @ (a) (v) Wi & {vi Ge A} (MHzi @ rr No. . Min Min Min Max Vv) Max Min Max { Min Max 2N3054 TO-66 90 55 7 4.0 90 25 05 4 i 1.7 0.5 8 2 1A 5 3 4 6 3 2N3055 TO-3 90 60 7 5.0 100 20 70 4 11 1.8 4 8 1.0 1B 5 10 4 8 10 2N3442 TO-3 160 140 7 5.0 140 20 70 3 4 1 1.7 3 1c 5 5.7 10 2N3771 TO-3 50 40 5 2 50 16 60 1S 4 2 27 15 2 1.0 iD 5 30 4 4 30 2N3772 TO-3 80 60 7 2.0 100 15 60 10 4 14 2.2 10 2 1.0 1D 5 20 4 4 20 2N3773 TO-3 160 140 7 5.0 140 15 60 8 4 1.4 2.2 8 2 1.0 1E 5 16 4 4 16 2N4347 TO-3 140 120 7 2.0 125 15 60 2 4 1 2 2 1c 5 4 2 3 5 2N4348 TO-3 140 420 7 2.0 120 15 60 5 4 4 2 5 2 1.0 1E 10 10 4 2 3 10 2NG253 TO3 55 45 5 2.6 56 200 3 4 1 i.7 3 8 10 iB 3 15 4 4 15