BUT11AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220F QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V MIN Tmb 25 IC = 2.5A; IB = 0.5A f = 16KHz IC=2.5A,IB1=-IB2=0.5A,VCC=150V MAX 1000 450 5 10 40 1.5 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Collector current (DC) Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN Tmb 25 -55 MAX 1000 450 5 5 2 4 40 150 150 UNIT V V V A A A W MAX 1.0 2.0 UNIT mA mA ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES PARAMETER Collector-emitter cut-off current VCEOsust Collector-emitter sustaining voltage VCEsat VBEsat hFE VF fT Cc ts tf Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 2.5A; IB = 0.5A IC = 2.5A; IB = 0.5A IC = 0.5A; VCE = 5V Switching times(16KHz line deflecton circuit) IC = 0.1A; VCE = 10V VCB = 10V IC=2.5A,IB1=-IB2=0.5A,VCC=150V Turn-off storage time Turn-off fall time IC=2.5A,IB1=-IB2=0.5A,VCC=150V Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com MIN V 10 1.5 1.5 50 5 5.0 1.0 V V V MHz pF s s