MITSUBISHI Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 -0.5 1.5MAX. 8.6 0.3 9.8 0.5 1.3 +0.3 0 -0 (1.5) FS10VS-06 1 B 5 0.5 q w e wr 10V DRIVE VDSS .................................................................................. 60V rDS (ON) (MAX) .............................................................. 78m ID ......................................................................................... 10A Integrated Fast Recovery Diode (TYP.) ............. 55ns 2.6 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID Gate-source voltage Drain current VDS = 0V 20 10 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 40 10 A A IS ISM Source current Source current (Pulsed) 10 40 A A PD T ch Maximum power dissipation Channel temperature 30 -55 ~ +150 W C -55 ~ +150 C g T stg -- Parameter Conditions L = 100H Storage temperature Weight Typical value 1.2 Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V Unit Min. Typ. Max. 60 -- -- -- -- 0.1 V A -- 2.0 -- 3.0 0.1 4.0 mA V -- 58 78 m ID = 5A, VDS = 5V -- -- 0.29 9.0 0.39 -- V S VDS = 10V, VGS = 0V, f = 1MHz -- -- 600 180 -- -- pF pF -- -- 60 18 -- -- pF ns -- -- 22 30 -- -- ns ns ID = 5A, VGS = 10V VDD = 30V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s -- 17 -- ns -- -- 1.0 -- 1.5 4.17 -- 55 -- V C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 DRAIN CURRENT ID (A) 50 100 150 200 tw = 10ms 101 7 5 3 2 100ms 1ms 100 7 5 3 2 10ms DC 10-1 7 5 TC = 25C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 7V 16 PD = 30W 6V 12 8 5V 4 0.4 0.8 1.2 1.6 VGS = 20V 10V 8V 10 Tc = 25C Pulse Test 0 5 3 2 CASE TEMPERATURE TC (C) VGS = 20V 10V 8V 20 0 MAXIMUM SAFE OPERATING AREA 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 6V Tc = 25C Pulse Test 8 6 4 5V 2 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.2 0.8 ID = 15A 10A 0.4 5A 0 4 8 12 VGS = 10V 20V 40 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) Tc = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 24 16 8 102 VDS = 5V 7 Pulse Test 5 4 3 2 101 7 5 4 3 TC = 25C 75C 125C 2 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 Ciss Coss 102 7 5 3 Tch = 25C 2 f = 1MHZ 101 60 DRAIN CURRENT ID (A) 32 0 80 0 20 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 40 DRAIN CURRENT ID (A) 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) 1.6 0 CAPACITANCE Ciss, Coss, Crss (pF) 100 Tc = 25C Pulse Test Crss VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 td(off) tr td(on) tf 101 7 5 4 3 Tch = 25C VDD = 30V VGS = 10V RGEN = RGS = 50 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 10V 12 20V 8 40V 4 0 4 8 12 16 24 TC = 125C 16 75C 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 25C 8 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 32 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 40 Tch = 25C ID = 10A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 PDM 0.2 100 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999