Datasheet 5 V2.1
2018-01-11
IKB20N65EH5
Highspeedswitchingseries5thgeneration
Turn-on delay time td(on) - 17 - ns
Rise time tr- 11 - ns
Turn-off delay time td(off) - 160 - ns
Fall time tf- 27 - ns
Turn-on energy Eon - 0.23 - mJ
Turn-off energy Eoff - 0.05 - mJ
Total switching energy Ets - 0.28 - mJ
Tvj=25°C,
VCC=400V,IC=10.0A,
VGE=0.0/15.0V,
RG(on)=32.0Ω,RG(off)=32.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 80 - ns
Diode reverse recovery charge Qrr - 0.50 - µC
Diode peak reverse recovery current Irrm - 8.5 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -750 - A/µs
Tvj=25°C,
VR=400V,
IF=20.0A,
diF/dt=800A/µs
Diode reverse recovery time trr - 56 - ns
Diode reverse recovery charge Qrr - 0.36 - µC
Diode peak reverse recovery current Irrm - 10.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -500 - A/µs
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=860A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) - 19 - ns
Rise time tr- 22 - ns
Turn-off delay time td(off) - 180 - ns
Fall time tf- 19 - ns
Turn-on energy Eon - 0.70 - mJ
Turn-off energy Eoff - 0.15 - mJ
Total switching energy Ets - 0.85 - mJ
Tvj=150°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=32.0Ω,RG(off)=32.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 17 - ns
Rise time tr- 12 - ns
Turn-off delay time td(off) - 180 - ns
Fall time tf- 23 - ns
Turn-on energy Eon - 0.34 - mJ
Turn-off energy Eoff - 0.06 - mJ
Total switching energy Ets - 0.40 - mJ
Tvj=150°C,
VCC=400V,IC=10.0A,
VGE=0.0/15.0V,
RG(on)=32.0Ω,RG(off)=32.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.