DATA SH EET
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Sep 11
DISCRETE SEMICONDUCTORS
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect
transistors
1996 Sep 11 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
FEATURES
•Low noise
•Interchangeability of drain and source connections
•High gain.
APPLICATIONS
•AM input stage in car radios
•VHF amplifiers
•Oscillators and mixers.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 s source
2 d drain
3 g gate
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
21
3
MAM036
Top view
Marking codes:
PMBFJ308: M08.
PMBFJ309: M09.
PMBFJ310: M10.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −±25 V
VGSoff gate-source cut-off voltage VDS =10V; I
D=1µA
PMBFJ308 −1−6.5 V
PMBFJ309 −1−4V
PMBFJ310 −2−6.5 V
IDSS drain current VGS = 0; VDS =10V
PMBFJ308 12 60 mA
PMBFJ309 12 30 mA
PMBFJ310 24 60 mA
Ptot total power dissipation up to Tamb =25°C−250 mW
yfsforward transfer admittance VDS =10V; I
D=10mA 10 −mS
1996 Sep 11 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −±25 V
VGSO gate-source voltage open drain −−25 V
VGDO gate-drain voltage open source −−25 V
IGforward gate current (DC) −50 mA
Ptot total power dissipation up to Tamb =25°C−250 mW
Tstg storage temperature −65 150 °C
Tjoperating junction temperature −150 °C
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
150
MBB688
Ptot
(mW)
Tamb (°C)
1996 Sep 11 4
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient; note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)GSS gate-source breakdown voltage IG=−1µA; VDS =0 −25 −−V
V
GSoff gate-source cut-off voltage ID=1µA; VDS =10V V
PMBFJ308 −1−−6.5 V
PMBFJ309 −1−−4V
PMBFJ310 −2−−6.5 V
VGSS gate-source forward voltage IG= 1 mA; VDS =0 −−1V
I
DSS drain current VDS =10V; V
GS =0
PMBFJ308 12 −60 mA
PMBFJ309 12 −30 mA
PMBFJ310 24 −60 mA
IGSS gate leakage current VGS =−15 V; VDS =0 −−−1nA
R
DSon drain-source on-state
resistance VGS = 0; VDS = 100 mV −50 −Ω
y
fsforward transfer admittance ID= 10 mA; VDS =10V 10 −−mS
yoscommon source output
admittance ID= 10 mA; VDS =10V −−250 µS
1996 Sep 11 5
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
DYNAMIC CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cis input capacitance VDS =10V; V
GS =−10 V; f = 1 MHz 3 5 pF
VDS =10V; V
GS = 0; Tamb =25°C6−pF
Crs reverse transfer capacitance VDS = 0; VGS =−10 V; f = 1 MHz 1.3 2.5 pF
gis common source input
conductance VDS =10V; I
D= 10 mA; f = 100 MHz 200 −µS
V
DS =10V; I
D= 10 mA; f = 450 MHz 3 −mS
gfs common source transfer
conductance VDS =10V; I
D= 10 mA; f = 100 MHz 13 −mS
VDS =10V; I
D= 10 mA; f = 450 MHz 12 −mS
grs common source reverse
conductance VDS =10V; I
D= 10 mA; f = 100 MHz −30 −µS
V
DS =10V; I
D= 10 mA; f = 450 MHz −450 −µS
g
os common source output
conductance VDS =10V; I
D= 10 mA; f = 100 MHz 150 −µS
V
DS =10V; I
D= 10 mA; f = 450 MHz 400 −µS
V
nequivalent input noise voltage VDS =10V; I
D= 10 mA; f = 100 Hz 6 −nV/√Hz
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
VDS = 10 V; Tj=25°C.
handbook, halfpage
0−1−2−4
50
0
MCD220
−3
40
30
20
10
IDSS
(mA)
VGSoff (V)
Fig.4 Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
VDS = 10 V; ID= 10 mA; Tj=25°C.
handbook, halfpage
0−2−4−8
MCD219
−6
20
0
16
12
8
yfs
(mS)
4
VGSoff (V)
1996 Sep 11 6
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
Fig.5 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
VDS = 10 V; ID= 10 mA; Tj=25°C.
handbook, halfpage
0
150
100
50
0−1−2−4
MCD221
−3
gos
(µS)
VGSoff (V)
Fig.6 Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
VDS = 100 mV; VGS = 0; Tj=25°C.
handbook, halfpage
0−1−2−4
80
60
20
0
40
MCD222
−3
RDSon
(Ω)
VGSoff (V)
Fig.7 Typical output characteristics; PMBFJ308.
handbook, halfpage
0 4 8 12 16
16
12
4
0
8
MCD216
VDS (V)
ID
(mA) VGS = 0 V
−0.25 V
−0.5 V
−0.75 V
−1 V
Tj=25°C.
Fig.8 Typical transfer characteristics; PMBFJ308.
handbook, halfpage
−2−1.5 −1−0.5 0
16
12
4
0
8
MCD213
VGS (V)
ID
(mA)
VDS = 10 V; Tj=25°C.
1996 Sep 11 7
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
Fig.9 Typical output characteristics; PMBFJ309.
handbook, halfpage
0 4 8 12 16
20
0
16
MCD218
12
8
4
VDS (V)
ID
(mA)
−1 V
−0.75 V
−0.5 V
−0.25 V
VGS = 0 V
Tj=25°C.
Fig.10 Typical transfer characteristics; PMBFJ309.
VDS = 10 V; Tj=25°C.
handbook, halfpage
−2−1.5 −1−0.5 0
20
0
16
MCD215
12
8
4
VGS (V)
ID
(mA)
Fig.11 Typical output characteristics; PMBFJ310.
Tj=25°C.
handbook, halfpage
048 16
40
30
10
0
20
MCD217
12
ID
(mA)
VDS (V)
−2.5 V
−2 V
−1.5 V
−1 V
VGS = 0 V
−0.5 V
Fig.12 Typical transfer characteristics; PMBFJ310.
VDS = 10 V; Tj=25°C.
handbook, halfpage
−4−3−20
40
30
10
0
20
MCD214
−1
ID
(mA)
VGS (V)
1996 Sep 11 8
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
Fig.13 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
VDS = 10 V; Tj=25°C.
handbook, halfpage
−10 −40
4
3
1
0
2
MCD224
−8−6−2
Crs
(pF)
VGS (V)
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
VDS = 10 V; Tj=25°C.
handbook, halfpage
−10 0
10
0
MCD223
−8−6−4−2
8
6
4
2
Cis
(pF)
VGS (V)
Fig.15 Drain current as a function of gate-source voltage; typical values.
VDS = 10 V; Tj=25°C.
handbook, full pagewidth
−2.5 −2−1.5 −1−0.5 0
103
102
10
1
10−1
10−2
10−3
MCD229
ID
(µA)
VGS (V)
1996 Sep 11 9
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
Fig.16 Gate current as a function of drain-gate voltage; typical values.
Tj=25°C.
handbook, full pagewidth
02
I
G
(pA)
4 6 8 10 12 14 VDG (V) 16
−104
−103
−102
−10
−1
−10−1
MCD230
ID = 10 mA
1 mA
100 µA
IGSS
Fig.17 Gate current as a function of junction temperature; typical values.
handbook, full pagewidth
−25 0
IGSS
(pA)
25 50 75 100 125 150 Tj (oC) 175
104
103
102
10
1
10−1
MCD231
1996 Sep 11 10
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
Fig.18 Input admittance; typical values.
VDS = 10 V; ID= 10 mA; Tamb =25°C.
handbook, halfpage
MCD228
10
100
10
1
0.1 100 1000
f (MHz)
gis, bis
(mS)
bis
gis
Fig.19 Forward transfer admittance; typical values.
VDS = 10 V; ID= 10 mA; Tamb =25°C.
handbook, halfpage
1000
MCD227
10010
1
gfs
100
10
gfs, −bfs
(mS)
f (MHz)
−bfs
Fig.20 Reverse transfer admittance; typical values.
VDS = 10 V; ID= 10 mA; Tamb =25°C.
handbook, halfpage
1000
MCD226
10010
102
10
10−1
10−2
1
−brs, −grs
(mS)
f (MHz)
− grs
− brs
Fig.21 Output admittance; typical values.
VDS = 10 V; ID= 10 mA; Tamb =25°C.
handbook, halfpage
MCD225
10
100
10
1
bos, gos
(mS)
0.1 100 1000
f (MHz)
bos
gos
1996 Sep 11 11
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
PACKAGE OUTLINE
Fig.22 SOT 23.
Dimensions in mm.
handbook, full pagewidth
MBC846
10
max
o
10
max
o
30
max
o
1.1
max
0.55
0.45
0.150
0.090
0.1
max
21
3
M0.1 AB
0.48
0.38
TOP VIEW
1.4
1.2 2.5
max
3.0
2.8
M
0.2 A
A
B
0.95
1.9
1996 Sep 11 12
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PMBFJ308; PMBFJ309;
PMBFJ310
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.