A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25°C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 48 V
BVCEO IC = 20 mA 25 V
BVEBO IE = 5 mA 3.5 4.0 --- V
ICBO VCB = 24 V 1.0 mA
hFE VCE = 10 V IC = 100 mA 20 100 ---
COB VCB = 24 V f = 1.0 MHz 25 pF
PG
η
ηη
ηC VCC = 24 V ICQ = 75 mA f = 960 MHz
POUT = 15 W 8.0
50 dB
%
NPN SILICON RF POWER TRANSISTOR
CBSL15
DESCRIPTION:
The ASI CBSL15 is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
FEATURES:
• Internal I nput Matching Network
• PG =8.0 dB at 15 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.5 A
VCBO 48 V
VCEO 30 V
VEBO 4.0 V
PDISS 29 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 6.0 °C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10581
MINIMUM
inc h es / mm
.115 / 2 .92
.225 / 5 .72
.075 / 1 .91
.090 / 2 .29
.720 / 1 8.2 9
B
C
D
E
F
G
A
MAXIMUM
.085 / 2 .16
.110 / 2 .79
.730 / 1 8.5 4
.235 / 5 .97
inc h es / mm
.125 / 3 .18
H.355 / 9 .02
DIM
K
L
I
J
.004 / 0 .10
.120 / 3 .05
.230 / 5 .84
.006 / 0 .15
.130 / 3 .30
.260 / 6 .60
K
4X .025 R
.040x45°
.115
I
.125
E
.430 D
H
G F
J
C A
B
2XØ.130
L
.160 / 4 .06 .180 / 4 .57
.980 / 2 4.8 9.970 / 2 4.6 4
.355 / 9 .02 .365 / 9 .27
.365 / 9 .27
