6-96
Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31 dB Typical at 0.5 GHz
26 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 0.8 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
Package 84
Description
The INA-02184 and INA-02186 are
low-noise silicon bipolar Mono-
lithic Microwave Integrated
Typical Biasing Configuration
INA-02184
INA-02186
Package 86
C
block
C
block
R
bias
V
CC
V
d
= 5.5 V
RFC (Optional)
RF IN RF OUT
4
12
3
Circuit (MMIC) feedback amplifi-
ers housed in low cost plastic
packages. They are designed for
narrow or wide bandwidth
commercial applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
5965-9675E
6-97
INA-02184, -02186 Absolute Maximum Ratings
Parameter Absolute Maximum[1]
Device Current 50 mA
Power Dissipation[2,3,4] 400 mW
RF Input Power +13 dBm
Junction Temperature +150°C
Storage Temperature –65 to 150°C
Thermal Resistance[2]:
θjc = 90°C/W — INA-02184
θjc = 100°C/W — INA-02186
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE
= 25°C.
3. Derate at 11.1 mW/°C for TC >
144°C for INA-02184.
4. Derate at 10 mW/°C for TC > 110°C
for INA-02186.
GPPower Gain (|S21|2) f = 0.5 GHz dB 29.0 31.0 29.0 31.0
∆GPGain Flatness f = 0.01 to 1.0 GHz dB ±2.0 ±2.0
f3 dB 3 dB Bandwidth[2] GHz 0.8 0.8
ISO Reverse Isolation (|S12|2) f = 0.01 to 1.0 GHz dB 39 39
Input VSWR (Max over Freq. Range) f = 0.01 to 1.0 GHz 1.5 2.0
Output VSWR (Max over Freq. Range) f = 0.01 to 1.0 GHz 1.7 1.7
NF 50 Ω Noise Figure f = 0.5 GHz dB 2.0 2.0
P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11 11
IP3Third Order Intercept Point f = 0.5 GHz dBm 23 23
tDGroup Delay f = 0.5 GHz psec 330 350
VdDevice Voltage V 4.0 5.5 7.0 4.0 5.5 7.0
dV/dT Device Voltage Temperature Coefficient mV/°C +10 +10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (GP).
INA-02184, -02186 Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 ΩUnits Min. Typ. Max. Min. Typ. Max.
VSWR
INA-02184, -02186 Part Number Ordering Information
Part Number No. of Devices Container
INA-02184-TR1 1000 7" Reel
INA-02184-BLK 100 Antistatic Bag
INA-02186-TR1 1000 7" Reel
INA-02186-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
INA-02184 INA-02186
6-98
INA-02184, -02186 Typical Performance, TA = 25°C
(unless otherwise noted)
0
10
20
30
40
50
I
d
(mA)
G
p
(dB)
I
d
(mA)
04628
V
d
(V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz) FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency.
NF (dB)
15
20
25
30
35
1.5
.01 .02 .05 0.1 0.2 0.5 1.0 2.0
2.0
2.5
3.0
3.5
G
p
(dB)
NF (dB)
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
15
20
25
30
35
20 30 40 50
Figure 3. Power Gain vs. Current.
0.1 GHz
1.5 GHz
1.0 GHz
0.5 GHz
1.5
2.0
2.5
30
31
32
9
11
13
–55 –25 +25 +85 +125 .02 .05 0.1 0.50.2 2.01.0 .02 .05 0.1 0.50.2 2.01.0
NF (dB)
0
9
6
15
12
3
1.5
3.0
2.5
3.5
2.0
P
1 dB
(dBm)
P
1 dB
(dBm)
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature,
f = 0.5 GHz, I
d
= 35 mA.
G
p
NF
I
d
= 40 mA
I
d
= 35 mA
I
d
= 30 mA
I
d
= 30 to 40 mA
Gain Flat to DC
P
1 dB
FREQUENCY (GHz)
Figure 7. Input VSWR vs. Frequency,
Id = 35 mA.
.02 .05 0.1 0.50.2 2.01.0
1.00:1
1.75:1
1.50:1
2.00:1
1.25:1
INA-02184
INA-02186
FREQUENCY (GHz)
Figure 8. Output VSWR vs. Frequency,
Id = 35 mA.
.02 .05 0.1 0.50.2 2.01.0
1.00:1
1.75:1
1.50:1
2.00:1
1.25:1
INA-02184
INA-02186
6-99
Typical INA-02184 Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.01 .09 –176 31.9 39.33 –1 –40.0 .010 1 .25 –1 1.40
0.05 .09 –171 31.9 39.24 –6 –41.9 .008 –12 .25 –4 1.66
0.10 .10 –163 31.8 39.07 –13 –40.9 .009 1 .25 –8 1.52
0.20 .13 –159 31.7 38.30 –26 –40.0 .010 15 .23 –13 1.44
0.30 .15 –161 31.4 37.30 –39 –38.4 .012 16 .22 –17 1.29
0.40 .18 –168 31.2 36.42 –51 –39.2 .011 32 .21 –15 1.39
0.50 .19 –175 31.0 35.40 –63 –40.0 .010 34 .21 –16 1.52
0.60 .20 179 30.7 34.20 –75 –37.1 .014 35 .21 –17 1.24
0.80 .19 166 29.9 31.21 –101 –38.4 .012 38 .24 –26 1.44
1.00 .17 159 28.4 26.36 –126 –36.5 .015 53 .24 –41 1.40
1.20 .15 159 26.8 21.89 –149 –34.0 .020 56 .22 –60 1.31
1.40 .15 163 24.8 17.36 –169 –33.2 .022 62 .18 –78 1.50
1.60 .16 168 22.6 13.59 175 –31.4 .027 67 .14 –93 1.50
1.80 .18 168 20.7 10.86 161 –31.1 .028 61 .11 –108 1.74
2.00 .19 165 18.8 8.71 149 –30.2 .031 64 .08 –125 1.92
2.50 .23 159 14.9 5.56 127 –29.1 .035 56 .05 –167 2.54
3.00 .27 150 11.5 3.76 106 –27.1 .044 65 .04 156 2.89
3.50 .30 143 8.8 2.74 89 –26.0 .050 57 .04 137 3.39
4.00 .33 133 6.6 2.14 73 –25.0 .056 62 .05 137 3.78
S11 S21 S12 S22
Typical INA-02186 Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.01 .09 –178 31.5 37.38 –1 –40.0 .010 1 .24 –1 1.46
0.05 .09 –172 31.5 37.55 –6 –37.7 .013 11 .24 –5 1.22
0.10 .11 –160 31.5 37.46 –13 –39.2 .011 8 .23 –9 1.37
0.20 .14 –153 31.4 37.04 –25 –40.9 .009 15 .22 –17 1.60
0.30 .18 –156 31.3 36.62 –37 –38.4 .012 1 .21 –25 1.30
0.40 .22 –161 31.2 36.20 –49 –37.7 .013 28 .19 –30 1.25
0.50 .25 –169 31.1 35.70 –61 –39.2 .011 42 .18 –35 1.40
0.60 .28 –177 30.9 34.94 –74 –38.4 .012 44 .16 –39 1.33
0.80 .31 165 30.2 32.34 –101 –36.5 .015 52 .15 –47 1.20
1.00 .30 148 28.8 27.64 –129 –34.4 .019 57 .12 –59 1.15
1.20 .27 135 27.0 22.26 –153 –32.4 .024 62 .09 –70 1.15
1.40 .24 129 24.7 17.22 –173 –31.1 .028 61 .07 –80 1.23
1.60 .21 128 22.5 13.27 170 –31.4 .027 62 .04 –82 1.52
1.80 .20 129 20.4 10.42 156 –29.1 .035 61 .02 –83 1.50
2.00 .20 131 18.4 8.34 144 –29.1 .035 63 .01 –20 1.79
2.50 .23 133 14.5 5.29 123 –27.1 .044 59 .02 30 2.15
3.00 .27 130 11.2 3.61 103 –25.7 .052 63 .02 27 2.56
3.50 .31 124 8.3 2.60 86 –24.4 .060 64 .02 34 2.97
4.00 .34 118 6.1 2.02 70 –23.4 .068 58 .01 30 3.28
S11 S21 S12 S22
6-100
Emitter Inductance and
Performance
As a direct result of their circuit
topology, the performance of INA
MMICs is extremely sensitive to
groundpath (“emitter”) induc-
tance. The two stage design
creates the possibility of a feed-
back loop being formed through
the ground returns of the stages. If
the path to ground provided by
the external circuit is “long” (high
in impedance) compared to the
path back through the ground
return of the other stage, then
instability can occur (see Fig. 1).
This phenomena can show up as a
“peaking” in the gain versus
frequency response (perhaps
creating a negative gain slope
amplifier), an increase in input
VSWR, or even as return gain (a
reflection coefficient greater than
unity) at the input of the MMIC.
The “bottomline” is that excellent
grounding is critical when
using INA MMICs. The use of
plated through holes or equivalent
minimal path ground returns at
the device is essential. An
appropriate layout is shown in
Figure 2. A corollary is that
designs should be done on the
thinnest practical substrate. The
parasitic inductance of a pair of
via holes passing through 0.032"
thick P.C. board is approximately
0.1 nH, while that of a pair of via
holes passing through 0.062" thick
board is close to 0.5 nH. HP does
not recommend using INA family
MMICs on boards thicker than
32␣ mils.
These stability effects are entirely
predictable. A circuit simulation
using the data sheet S-parameters
and including a description of the
ground return path (via model or
equivalent “emitter” inductance)
will give an accurate picture of the
performance that can be ex-
pected. Device characterizations
are made with the ground leads of
the MMIC directly contacting a
solid copper block (system
ground) at a distance of 2 to 4 mils
from the body of the package.
Thus the information in the data
sheet is a true description of the
performance capability of the
MMIC, and contains minimal
contributions from fixturing.
Figure 1. INA Potential
Ground Loop.
Figure 2. INA Circuit Board 2x
Actual Size.
6-101
Package 84 Dimensions Package 86 Dimensions
1
4
3
2
0.51 (0.020)
0.51
(0.020)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.20 ± 0.050
(0.008 ± 0.002)
2.15
(0.085)
1.52 ± 0.25
(0.060 ± 0.010)
5.46 ± 0.25
(0.215 ± 0.010)
5°
GROUND
RF OUTPUT
AND DC BIAS
GROUND
RF INPUT
N02
4
0.51 ± 0.13
(0.020 ± 0.005)
2.34 ± 0.38
(0.092 ± 0.015)
2.67 ± 0.38
(0.105 ± 0.15)
13
2
2.16 ± 0.13
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
0.30 MIN
(0.012 MIN)
C
L
45°
5° TYP.
8° MAX
0° MIN
N02
