DATA SH EET
Product specification
Supersedes data of 1996 Jun 05 1999 Nov 16
DISCRETE SEMICONDUCTORS
BYD37 series
Fast soft-recovery
controlled avalanche rectifiers
b
ook, halfpage
M3D121
1999 Nov 16 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Smallest surface mount rectifier
outline
•Shipped in 8 mm embossed tape.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYD37D −200 V
BYD37G −400 V
BYD37J −600 V
BYD37K −800 V
BYD37M −1000 V
VRcontinuous reverse voltage
BYD37D −200 V
BYD37G −400 V
BYD37J −600 V
BYD37K −800 V
BYD37M −1000 V
IF(AV) average forward current Ttp = 105 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.6
−1.5 A
IF(AV) average forward current Tamb =60°C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
−0.6 A
IFRM repetitive peak forward current Ttp = 105 °C; see Fig.4 −13 A
Tamb =60°C; see Fig.5 −5.5 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
−20 A
1999 Nov 16 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”
.
ERSM non-repetitive peak reverse
avalanche energy L = 120 mH; Tj=T
j max prior to
surge; inductive load switched off
BYD37D to J −10 mJ
BYD37K and M −7mJ
T
stg storage temperature −65 +175 °C
Tjjunction temperature see Fig.7 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 1 A; Tj=T
j max;
see Fig.8 −−1.1 V
IF=1A;
see Fig.8 −−1.3 V
V(BR)R reverse avalanche breakdown
voltage IR= 0.1 mA
BYD37D 300 −−V
BYD37G 500 −−V
BYD37J 700 −−V
BYD37K 900 −−V
BYD37M 1100 −−V
I
Rreverse current VR=V
RRMmax; see Fig.9 −− 1µA
V
R
=V
RRMmax;
Tj= 165 °C; see Fig.9 −−100 µA
trr reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25A;
see Fig.12
BYD37D to J −−250 ns
BYD37K and M −−300 ns
Cddiode capacitance f = 1 MHz; VR=0;
see Fig.10 −20 −pF
maximum slope of reverse recovery
current when switched from
IF=1AtoV
R≥30 V and
dIF/dt = −1A/µs;
see Fig.13
BYD37D to J −− 6A/µs
BYD37K and M −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 30 K/W
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
dIR
dt
--------
1999 Nov 16 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
GRAPHICAL DATA
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0 200
3
0
1
2
MGA854
100
IF(AV)
(A)
T ( C)
o
tp
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0 200
0.8
0
MGA855
100
IF(AV)
(A)
T ( C)
amb o
0.6
0.4
0.2
handbook, full pagewidth
0
8
10 211010
2103104
MLB268
16
t (ms)
p
10 1
IFRM
(A)
4
12
δ= 0.05
0.2
0.1
0.5
1
Ttp = 105 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 16 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
handbook, full pagewidth
6
0
2
10 211010
2103104
MLB267
4
t (ms)
p
10 1
IFRM
(A) δ= 0.05
0.1
0.2
0.5
1
Tamb =60°C; Rth j-a = 150 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.6 Maximumsteadystatepowerdissipation
(forward plus leakage current losses,
excludingswitching losses) as a function
of average forward current.
handbook, halfpage
0
MGA869
2.4
0
1.6
0.8
a = 3 2.5 2
P
(W)
I (A)
F(AV)
0.8 1.6
1.57
1.42
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.7 Maximumpermissiblejunctiontemperature
as a function of reverse voltage.
handbook, halfpage
200
0 400 1200
0
MGA861
800
100
V (V)
R
Tj
( C)
o
DGJ KM
1999 Nov 16 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.8 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
032
6
0
2
4
MGA850
1
IF
(A)
V (V)
F
VR=V
RRMmax.
Fig.9 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
103
102
10
1200
0
MGA853
100 T ( C)
jo
IR
( A)µ
f = 1 MHz; Tj=25°C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGA862
10 102103
1
102
10
V (V)
R
Cd
(pF)
D, G, J
K, M
MSB213
4.5
2.5
1.25
50
50
Fig.11 Printed-circuit board for surface mounting.
Dimensions in mm.
1999 Nov 16 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.12 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
Fig.13 Reverse recovery definitions.
n
dbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1999 Nov 16 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD87 100H03 99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors SOD87
UNIT D
mm 2.1
2.0 2.0
1.8 3.7
3.3 0.3
D1 HL
DIMENSIONS (mm are the original dimensions) H
DD1
LL
(2)
0 1 2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
ka
1999 Nov 16 9
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
NOTES
1999 Nov 16 10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
NOTES
1999 Nov 16 11
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYD37 series
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 68
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Printed in The Netherlands 135002/03/pp12 Date of release: 1999 Nov 16 Document order number: 9397 750 06274
