GaAs INTEGRATED CIRCUIT PG2250T5N D 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 UE DESCRIPTION The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. * Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) * Supply voltage : VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.) * Control voltage O NT IN FEATURES * Circuit current : Vcont = 1.5 to 2.1 V (1.8 V TYP.) : IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm : IDD = 170 mA TYP. @ VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pout = +24 dBm * Output power : Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm : Pout = +25.0 dBm TYP. @ VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pin = 5 dBm * Gain control range : GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = 5 dBm * High efficiency : PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm * High-density surface mounting : 6-pin plastic TSON package (1.5 1.5 0.37 mm) APPLICATION * Power Amplifier for Bluetooth Class 1 ORDERING INFORMATION Part Number PG2250T5N-E2 Order Number PG2250T5N-E2-A Package 6-pin plastic TSON SC (Pb-Free) Marking G5C Supplying Form Embossed tape 8 mm wide Pin 1, 6 face the perforation side of the tape Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. DI Part number for sample order: PG2250T5N-A Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10639EJ03V0DS (3rd edition) Date Published February 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. PG2250T5N PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin Name 1 OUTPUT/VDD3 2 N.C. 3 Vcont 4 INPUT 5 VDD1 6 VDD2 UE D Pin No. Remark Exposed pad : GND ABSOLUTE MAXIMUM RATINGS (T A = +25C, unless otherwise specified) Parameter Control Voltage Circuit Current Control Current Input Power Power Dissipation Ratings VDD1, 2, 3 5.0 Unit V O NT IN Supply Voltage Symbol Vcont 2.4 V IDD 250 mA Icont 5 mA Pin +5 dBm PD 400 Note mW Operating Ambient Temperature TA 40 to +85 C Storage Temperature Tstg 55 to +150 C Note Mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass PWB, TA = +85C RECOMMENDED OPERATING RANGE (T A = +25C, unless otherwise specified) Parameter Operating Frequency MIN. TYP. MAX. Unit fopt 2 400 2 450 2 500 MHz VDD1, 2, 3 1.5 1.8 3.5 V 1.5 1.8 2.1 V SC Supply Voltage Symbol Vcont DI Control Voltage 2 Data Sheet PG10639EJ03V0DS PG2250T5N ELECTRICAL CHARACTERISTICS (T A = +25C, VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, f = 2 450 MHz, external input and output matching, unless otherwise specified) IDD Control Current Icont Shut Down Current Ishut down Output Power 1 Pout1 Test Conditions MIN. TYP. MAX. Unit Pout = +19 dBm 100 130 mA VDD1,2,3 = 3.0 V, Pout = +24 dBm 170 mA Pout = +19 dBm Vcont = 0 V, RF None Pin = 5 dBm +19 D Circuit Current Symbol 3 mA 5 A +20 dBm UE Parameter VDD1,2,3 = 3.0 V, Pin = 5 dBm +25 dBm 40 dBm Output Power 2 Pout2 Vcont = 0 V, Pin = 5 dBm Gain Control Range GCR Vcont = 0 to 1.8 V, Pin = 5 dBm 60 dB Efficiency PAE Pin = 5 dBm 55 % 2f0 Pin = 5 dBm 35 dBc DI SC O NT IN 2nd Harmonics Data Sheet PG10639EJ03V0DS 3 PG2250T5N O NT IN UE D EVALUATION CIRCUIT DI SC The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10639EJ03V0DS PG2250T5N DI SC O NT IN UE D TYPICAL CHARACTERISTICS (T A = +25C, f = 2 450 MHz, with external input and output matching circuits, unless otherwise specified) Remark The graphs indicate nominal characteristics. Data Sheet PG10639EJ03V0DS 5 PG2250T5N S-PARAMETERS 1 O NT IN UE D Condition : f = 0.1 to 6.1 GHz, Pin = 30 dBm, Vcont = 1.8 V, VDD1 = VDD2 = VDD3 = 1.8 V S-PARAMETERS 2 DI SC Condition : f = 0.1 to 6.1 GHz, Pin = 30 dBm, Vcont = 1.8 V, VDD1 = VDD2 = VDD3 = 3.0 V Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10639EJ03V0DS PG2250T5N MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS SC O NT IN UE D 6-PIN PLASTIC TSON (UNIT: mm) DI Remark The mounting pad and solder mask layouts in this document are for reference only. Data Sheet PG10639EJ03V0DS 7 PG2250T5N PACKAGE DIMENSIONS SC O NT IN UE D 6-PIN PLASTIC TSON (UNIT: mm) DI <R> 8 Data Sheet PG10639EJ03V0DS PG2250T5N RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Wave Soldering : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260C or below WS260 : 10 seconds or less Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350C or below HS350 : 3 seconds or less O NT IN Soldering time (per side of device) IR260 D Peak temperature (package surface temperature) Time at peak temperature Partial Heating Condition Symbol UE Infrared Reflow Soldering Conditions Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below DI SC Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10639EJ03V0DS 9 PG2250T5N Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. D 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. DI SC O NT IN UE * Do not lick the product or in any way allow it to enter the mouth. 10 Data Sheet PG10639EJ03V0DS Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: UPG2250T5N-EV09-A UPG2250T5N-EVSAW24-A