HN / 2N 4402/4403 PNP EPITAXIAL SILICON TRANSISTOR General purpose transistor > > Ko a> t 4 Collector Emitter Voltage: V.., = 40V Collector Dissipation: P, (max) = 625mW 46 On speciai request, these transistors can be manufactured in different pin configurations. Please refer to the TO-92 TRANSISTOR PACKAGE OUTLINE on page 80 for the available pin options. min. 12.5 max, 80.55 | | 25 ef The B TO-92 Plastic Package Weight approx. 0.18 g Dimensions in mm Absolute Maximum Ratings (T, = 25C) Characteristic Symbol Value Unit Collector-Base Voltage Voso -40 Vv Collector-Emitter Voltage Voro -40 V Emitter-Base Voltage Vepo -5 V Collector Current l, -600 mA Collector Dissipation Pit 625 mw Junction Temperature T, 150 C Storage Temperature Range T, . -55 to + 150 C GS P FORM A AVAILABLE SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )HN / 2N 4402/4403 PNP EPITAXIAL SILICON TRANSISTOR Characteristics at T,,, =25 C Symbol Min. Typ. Max. Unit DC Current Gain. at -V,, = 1V, -1, =0.1 mA HN / 2N 4403 hee 30 - - at-V,.=1V,-l,=1mA HN / 2N 4402 h,. 30 - - HN / 2N 4403 FE 60 - - at-V,, = 1V,-l,=10mA HN / 2N 4402 Nee 50 - - HN / 2N 4403 hee 100 - - at -V,,. = 1V, -I, = 150 mA HN / 2N 4402 FE 50 - 150 - HN / 2N 4403 FE 100 - 300 - at -V,, = 2V, -I, = 500 mA HN / 2N 4402 he 20 - - HN / 2N 4403 Nee 20 - - Collector Cutoff Current at -V,, = 35 V, at -V,, = 0.4V lox - - 100 nA Base Cutoff Current at -V,, = 35 V, at -V_, = 0.4V -leey - - 100 nA Collector Emitter Breakdown Voltage at-l,=1mA -Vieayceo 40 - - V Collector Base Breakdown Voltage at -l, = 100 HA -Vieryoso 40 - - Vv Collector Saturation Voltage at -l, = 150 mA, -Il,=15 mA ~Voreat - - 0.4 Vv Base Saturation Voltage . at -l, = 150 mA, -I,= 15 mA ~Vicsat 0.75 - 0.95 V Emitter Base Breakdown Voltage at -I, = 100 pA Veryeso) 5 - - Vv Gain Bandwidth Product at -V,, = 10V, -l,= 20 mA, f = 100MHz HN / 2N 4402 150 - - MHz HN / 2N 4403 f, 200 - - MHz Collector Base Capacitance at -V,,, = 10 V, f = 140MHz, -I. = 0 Ceo) - - 8.5 pF Turn On Time at -V,, = 30 V, -Va, = 2V, -I, = 150 mA, -I,1 = 15 mA ton - - 35 ns Turn Off Time : at -V,, = 30 V, -l, = 150 mA, -1,1 = -I,2 = 15mA ton - - 255 ns Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. GS P FORM A AVAILABLE SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )HN / 2N 4402/4403 PNP EPITAXIAL SILICON TRANSISTOR DC current gain Collector saturation voltage versus collector current versus collector current iM HN / 2N 4402/4403 1000 HN /2N 4402/4403 ~ |= typical i eo =--~ limits at Tamb = | , Meet | 319 | } 03 100 02 sa 0.1 ,o 10 Common emitter collector Base saturation voltage characteristics versus collector current , HN / 2N 4402/4403 ma HN / 2N 4402/4403 typical i 28 won mits 25C / 26 -l F Vacsat | 7, *' 7 7_h00 t / 300 / 4414 Fa 7 LL, ,7509C 4 SY, 200 = oe Ceo 25 ~ - -1~ che S i 100 o%& 0 10! 1 10 102 103 mA ___e] C Ve E SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )