MCMA140PD1200TB Thyristor \ Diode Module VRRM = 2x 1200 V I TAV = 140 A VT = 1.28 V Phase leg Part number MCMA140PD1200TB Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA140PD1200TB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1200 V TVJ = 25C 100 A TVJ = 140C 10 mA I T = 150 A TVJ = 25C 1.29 V 1.63 V 1.28 V TVJ = 125 C I T = 150 A I T = 300 A I TAV average forward current TC = 85 C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V VR/D = 1200 V I T = 300 A Ptot max. Unit 1300 V 1.70 V T VJ = 140 C 140 A 220 A TVJ = 140 C 0.85 V 2.8 m 0.22 K/W K/W 0.20 TC = 25C 520 W t = 10 ms; (50 Hz), sine TVJ = 45C 2.40 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.59 kA t = 10 ms; (50 Hz), sine TVJ = 140 C 2.04 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.21 kA t = 10 ms; (50 Hz), sine TVJ = 45C 28.8 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 27.9 kAs t = 10 ms; (50 Hz), sine TVJ = 140 C 20.8 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 140 C 20.2 kAs 119 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 C; f = 50 Hz repetitive, IT = 450 A t P = 200 s; di G /dt = 0.45 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 200 mA VGD gate non-trigger voltage TVJ = 140C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 200 mA I G = 0.45 A; V = VDRM 150 A/s non-repet., I T = 150 A 500 A/s 1000 V/s TVJ = 140C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s 1.5 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 150 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 185 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA140PD1200TB Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 140 C -40 125 C 125 C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL terminal to terminal 13.0 terminal to backside 16.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M C M A 140 PD 1200 TB Ordering Standard Ordering Number MCMA140PD1200TB Equivalent Circuits for Simulation I V0 R0 = = = = = = = = Marking on Product MCMA140PD1200TB * on die level Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA-1B Delivery Mode Box Code No. 512618 T VJ = 140 C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 1.6 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA140PD1200TB Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA140PD1200TB Thyristor 300 105 2000 VR = 0 V 50 Hz, 80% VRRM 250 200 1600 IT ITSM TVJ = 45C 2 It TVJ = 45C TVJ = 140C 104 150 TVJ = 125C [A] 100 [A] [A2s] 1200 140C TVJ = 140C 50 TVJ = 25C 0 0.5 103 800 1.0 1.5 2.0 0.01 0.1 VT [V] 1 1 t [s] 100 Fig. 3 I t versus time (1-10 s) 200 tp = 30 s tp = 500 s PGM = 120 W 60 W 8W TVJ = 125C 10.0 ITAVM120 tgd [V] lim. [s] 1.0 [A] 80 typ. IGT (TVJ = -40C) IGT (TVJ = 0C) IGT (TVJ = 25C) 25C 125C 1 0.1 dc = 1 0.5 0.4 0.33 0.17 0.08 160 10 P = GAV IGD 4 5 6 7 8 910 t [ms] 100.0 0.1 0.01 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 1 40 0.1 0.01 10 0 0.10 1.00 10.00 0 40 IG [A] IG [A] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 120 160 Tcase [C] Fig. 6 Max. forward current at case temperature 0.24 250 dc = 1 0.5 0.4 0.33 0.17 0.08 200 Ptot 150 [W] 0.20 RthHA 0.1 0.2 0.4 0.6 0.8 1.0 0.16 ZthJC 0.12 [K/W] 100 i Rthi (K/W) 1 0.0073 2 0.0128 3 0.1329 4 0.067 0.08 50 0.04 ti (s) 0.0001 0.0031 0.084 0.42 0.00 0 0 40 80 120 160 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MCMA140PD1200TB