MCMA140PD1200TB
Phase leg
Thyristor \ Diode Module
3 1 2
5 4
Part number
MCMA140PD1200TB
Backside: isolated
TAV
T
V V1.28
RRM
140
1200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA140PD1200TB
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.29
R0.22 K/W
min.
140
VV
100T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
520 WT = 25°C
C
150
1200
forward voltage drop
total power dissipation
Conditions
Unit
1.63
T = 25°C
VJ
140
V
T0
V0.85T = °C
VJ
140
r
T
2.8 mΩ
V1.28T = °C
VJ
I = A
T
V
150
1.70
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA220
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
140
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
119
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
2.40
2.59
20.8
20.2
kA
kA
kA
kA
2.04
2.21
28.8
27.9
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
450 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
200 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
185 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 150 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 150 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA140PD1200TB
Ratings
C
M
M
A
140
PD
1200
TB
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
TO-240AA-1B
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C140
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
125-40
terminal to terminal
TO-240AA
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCMA140PD1200TB 512618Box 36MCMA140PD1200TBStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.85
mΩ
V
0 max
R
0 max
slope resistance *
1.6
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
140 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA140PD1200TB
3 1 2
5 4
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA140PD1200TB
0 40 80 120 160
0
40
80
120
160
200
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
800
1200
1600
2
0
00
0.5 1.0 1.5 2.0
0
50
100
150
200
250
3
0
0
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
0.20
0.24
IT
[A
]
t [s]
VT[V]
2 3 4 5 6 7 8 9 011
103
104
10
5
I2t
[A2s]
t [ms]
ITSM
[A]
TVJ = 25°C
TVJ = 45°C
50 Hz, 80% VRRM
TVJ = 45°C
VR = 0 V
ITAVM
[A]
Tcase [°C]
ZthJC
[K/W]
t [ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 s)
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at
case temperature
Fig. 8 Transient thermal impedance junction to case
tgd
[μs]
IG[A]
lim.
typ.
Fig. 5 Gate controlled delay time tgd
0 40 80 120 160
0
50
100
150
200
250
IT(AV) [A]
Ptot
[
W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 40 80 120 160
Tamb [°C]
TVJ = 125°C
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
0.01 0.1 1 10
0.1
1
10
100
VG
[V]
IG[A]
tp= 30 µs
tp= 500 µs
PGM = 120 W
60 W
PGAV = 8 W
125°C
25°C
IGD
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
TVJ = 140°C
TVJ = 140°C
i Rthi (K/W) ti(s)
1 0.0073 0.0001
2 0.0128 0.0031
3 0.1329 0.084
4 0.067 0.42
TVJ = 125°C
140°C
RthHA
0.1
0.2
0.4
0.6
0.8
1.0
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
