APT11GF120BRD1 1200V 22A Fast IGBT & FRED The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. TO-247 G * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode C E C G E MAXIMUM RATINGS (IGBT) Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT11GF120BRD1 VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20K) 1200 VGE Gate-Emitter Voltage 20 I C1 Continuous Collector Current @ TC = 25C 22 I C2 Continuous Collector Current @ TC = 110C 11 L A C I N H C N E T IO E T C MA N A OR V AD INF I CM1 Pulsed Collector Current 1 @ TC = 25C 44 I CM2 Pulsed Collector Current 1 @ TC = 110C 22 PD Total Power Dissipation TJ,TSTG TL UNIT Volts Amps 125 Watts -55 to 150 Operating and Storage Junction Temperature Range C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) BVCES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions TYP MAX 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) 2.5 3.0 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) 3.1 3.7 Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.6mA) Gate Threshold Voltage (VCE = VGE, I C = 350A, Tj = 25C) MIN 1200 4.5 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 0.6 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 3.0 Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts mA nA 052-6258 Rev F 1-2003 Symbol DYNAMIC CHARACTERISTICS (IGBT) Symbol Test Conditions Characteristic Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance 2 Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge td(off) tf td(on) tr td(off) tf Eon Turn-on Delay Time Rise Time Turn-off Delay Time 90 130 f = 1 MHz 38 65 Gate Charge VGE = 15V 60 8 I C = I C2 38 Resistive Switching (25C) 10 VGE = 15V 50 UNIT pF nC ns 55 110 RG = 10 Fall Time 13 Turn-on Delay Time Rise Time 20 Inductive Switching (125C) VCLAMP(Peak) = 0.66VCES Turn-off Delay Time ns 125 VGE = 15V L A C I N H C N E T O I E AT C N RM A V FO D A IN Fall Time 90 I C = I C2 Turn-on Switching Energy Total Switching Losses tf 800 I C = I C2 Ets td(off) 600 VCC = 0.8VCES Turn-off Switching Energy tr MAX VCC = 0.5VCES Eoff td(on) TYP VCE = 25V Qg tr MIN Capacitance VGE = 0V Cies td(on) APT11GF120BRD1 3 R G = 10 .5 TJ = +125C 1.0 3 Turn-on Delay Time 1.5 13 Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES Rise Time 20 VGE = 15V Turn-off Delay Time 3 Ets Total Switching Losses gfe Forward Transconductance R G = 10 90 TJ = +25C 1.0 VCE = 20V, I C = I C2 ns 110 I C = I C2 Fall Time mJ mJ 4.7 S THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA 052-6258 Rev F 1-2003 WT Torque Characteristic MIN TYP MAX Junction to Case (IGBT) 1.00 Junction to Case (FRED) 2.0 Junction to Ambient 40 Package Weight UNIT C/W 0.22 oz 6.1 gm 10 lb*in 1.1 N*m Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 See MIL-STD-750 Method 3471 3 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. APT11GF120BRD1 ULTRAFAST SOFT RECOVERY PARALLEL DIODE All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS (FRED) Symbol Characteristic / Test Conditions VR Maximum D.C. Reverse Voltage APT11GF120BRD1 UNIT 1200 Volts VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) 15 RMS Forward Current 29 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) 110 IF(RMS) IFSM Amps STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions MIN TYP MAX 2.5 IF = 15A VF IRM LS Maximum Forward Voltage UNIT 2.5 IF = 30A L A C I N H C N E T IO E T C MA N A OR V AD INF Volts IF = 15A, TJ = 150C 2.2 Maximum Reverse Leakage Current VR = VR Rated 250 Maximum Reverse Leakage Current VR = VR Rated, TJ = 125C 500 A 10 Series Inductance (Lead to Lead 5mm from Base) nH DYNAMIC CHARACTERISTICS (FRED) Characteristic MIN TYP MAX TBD trr1 Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C 48 trr2 Reverse Recovery Time TJ = 25C 60 trr3 IF = 15A, diF /dt = -100A/s, VR = 650V TJ = 100C 132 tfr1 Forward Recovery Time TJ = 25C 192 tfr2 IF = 15A, diF /dt = 100A/s, VR = 650V TJ = 100C 211 IRRM1 Reverse Recovery Current TJ = 25C 4.0 TBD IRRM2 IF = 15A, diF /dt = -100A/s, VR = 650V TJ = 100C 7 TBD Qrr1 Recovery Charge TJ = 25C 126 Qrr2 IF = 15A, diF /dt = -100A/s, VR = 650V TJ = 100C 523 Vfr1 Forward Recovery Voltage TJ = 25C 12 Vfr2 IF = 15A, diF /dt = 100A/s, VR = 650V TJ = 100C 18 Rate of Fall of Recovery Current TJ = 25C 166 IF = 15A, diF /dt = -100A/s, VR =650V TJ = 100C 81 diM/dt UNIT ns Amps nC Volts A/s 052-6258 Rev F 1-2003 Symbol APT11GF120BRD1 Vr D.U.T. trr/Qrr Waveform 30H PEARSON 411 CURRENT TRANSFORMER +15v diF /dt Adjust 0v -15v Figure 25, Diode Reverse Recovery Test Circuit and Waveforms 1 IF - Forward Conduction Current 2 diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. 3 IRRM - Peak Reverse Recovery Current. 4 trr - Reverse Recovery Time Measured from Point of IF Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 1 4 6 Zero 5 L A C I N H C N E T IO E T C MA N A OR V AD INF 3 0.5 IRRM 0.75 IRRM 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 8, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector (Cathode) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 052-6258 Rev F 1-2003 5.38 (.212) 6.20 (.244) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector (Cathode) Emitter (Anode)