KEE ssemconpuctor KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B c * Low Leakage Current > Icpx=10nA(Max.) ; Vcr=60V, Vantorr=3V. - Low Saturation Voltage < > Vertsay=0.3V (Max.) ; Io-=150mA, Ip=15mA. , t - Complementary to the KTN2907/2907A. ; A ft PS ea * KTN2222/2222A Electrically Similar to 2N2222/2222A. | oJ B 4.80 MAX Cc 3.70 MAX >I D 0.45 | E 1.00 | F 1.27 I G 0.85 eae H 0.45 MAXIMUM RATINGS (Ta=25) . os oss uae RATING | oe CHARACTERISTIC SYMBOL UNIT o-oo o N 1.00 KTN2222 | KTN2222A 3 a EMITTER Collector-Base Voltage Veo 60 75 V . Collector-Emitter Voltage Vero 30 AO Vv TO92 Emitter-Base Voltage Vio 5 6 Vv Collector Current Te 600 mA Collector Power Dissipation soe (Ta=25C) re Se mw Junction Temperature Tj 150 Cc Storage Temperature Range Tstz -55 ~ 150 Cc 1999. 5. 4 Revision No : 1 KEC 1/5KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25'C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current KTN2222A4 Tcex Vcr=60V, Viesorn=3V - - 10 nA KTN2222 Vcn=50V, [n=0 - - 0.01 Collector Cut-off Current Tczo BA KTN2222A Vcn=60V, In=0 - - 0.01 Emitter Cut-off Current KTN2222A Tego Vip=3V, Ic=0 - - 10 nA Collector-Base] KTN2222 60 _ _ Vesricno | Ic=l0OuA, TR=0 V Breakdown Voltage KTN2222A 75 - - Collector-Emitter * KTN2222 30 7 7 Breakdown Voltage Visco Te=10mA, Is-0 Vv 8 KTN2222A AQ - - Emitter-Base KTN2222 5 ~ ~ VwREBO Tp=10uA, Ic=0 Vv Breakdown Voltage KTN2222A 6 _ _ hep() Ic=0.1mA, Vcr-1l0V 35 _ _ KTN2222 hrr(2) Ic=lmA, Voer=loV 50 - - KTN2222A | 4.53) | Ic=10mA, Ver=10V B - - DC Current Gain * hye) Tc=150mA, Ver=10V 100 - 300 KTN2222 30 - - hye(5) Tc=500mA, Ver=10V KTN2222A AQ - - KTN2222 - - 0.4 Versa T=150mA, Tp=lomA _ _ gq Collector-Emitter * KTN2222A 0.3 Vv Saturation Voltage KTN2222 _ _ 16 Ver(sav2 Tc=500mA, Tp=50mA KTN2222A - - 1 KTN2222 - - 1.3 Vartar! Tc=150mA, In=15mA Base-Emitter a KTN2222A 0.6 - 1.2 y Saturation Voltage KTN2222 _ _ 26 VaR(savZ Tc=500mA, Tp=50mA KTN2222A - - 2.0 KTN2222 250 - - Transition Frequency fr Tc=20mA, Vecr=20V, f=100MHz MHz KTN2222A 300 - - Collector Output Capacitance Cob Vep=l0V, Ie=0, f=1.0MHz - - 8 pF KTN2222 - - 30 Input Capacitance Cip Vep=0.5V, Ic=0, f=1.0MHz pF KTN2222A - - 25 *Pulse Test : Pulse Width <300uS, Duty Cycle<2.0% 1999. 5. 4 Revision No : 1 KEL 2/5KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Ic=ImA, Veu=10V, f=1kHz 2 - 8 Input Impedance KTN2222A hie kQ Ic=10mA, Ver=10V, f=1kHz 0.25 - 1.25 . Ic=IlmA, Von=10V, f=1kHz - - 8 noes Beedback | TN2222A Dre x10" ano Ic=10mA, Ver=10V, f=1kHz - - 4 Small-Sineal Ic=ImA, Veu=10V, f=1kHz 50 - 300 Cuwene Cat KTN2222A hie urrent an Ic=10mA, Ver=l0V, f=1kHz 75 - 375 Ic=ImA, Veu=10V, f=1kHz 5 - 35 men Output KTN2222A hoe uo mean Ic=10mA, Vor=10V, f=LkHz 25 - | 200 Collector Base KTN2222A | Cerrbb | In=20mA, Ven=20V, =318MHz | - - | 150 | ps Time Constant Noise Figure KTN2222A np | [eo 100HA, Vou 10V, - - 4 dB Rg=1k@, f=lkHz Delay Time a Vec=30V, Varorn=0.5V - - 10 Ic = 150mA, Ini =l5mA Rise Time t - - 25 Switching Time ns Storage Time tstg Vee=30V, [e=150mA - - 995 Fall Time ts Tpi=~Tno=15mA _ _ 60 1999. 5. 4 Revision No : 1 KECKTN2222/A Ic Vcr hre Ic qd 1000 1K A COMMON EMITTER Ta=25'C Ee 500 > 800 - z 300 & 600 o fa E 100 5 a D> 400 a = f 50 o oO 30 ee 200 4 A 10 o 0 0.4 0.8 1.2 1.6 1.8 0.5 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE Vcg_ (V) COLLECTOR CURRENT Ic (mA) Vck(sat) Ic VBE(sat) Ic Zz = 0.6 COMMON EMITTER] Z 1.6 ON a I/Ip=10 eI 1.4 10 = Ta=25C = Pe Be 12 a7 >. n 0.4 & 3 a & & 1.0 & & ES gE 08 AU . So ee | fs 0.4 oy | ES Vex(sat) | ||] as 0.2 8 0.5 1 3 10 30 100 300 tk 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) Ic Vpr 500 B 1000 q 300 a = 100 oe e B ce 30 z Z 5 BH 10 = 100 [ae] & > 3 pa oO Fy 2 z 30 1 g ae oO _ 4 0.3 2 10 5 4 -1 -3 -10 -20-100 -300 -1k -3k oO 0.1 Be 0.05 COLLECTOR CURRENT Ic (mA) 0.2 03 04 05 06 0.7 08 0.9 1.0 BASE-EMITTER VOLTAGE Vpx (V) 1999. 5. 4 Revision No : 1 KEC 4/5KTN2222/A Cob - Vcp Cib - Veg 100 700 MMON =1MHz, Ta=25C wo oS re o ed COLLECTOR POWER DISSIPATION = Lo = -1.0 -10 -100 -300 0 20 50 75 100 125 150 175 COLLECTOR-BASE VOLTAGE Vcg (V) AMBIENT TEMPERATURE Ta (C) EMITTER-BASE VOLTAGE Vgp (V) COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) 1999. 5. 4 Revision No : 1 KEC 5/5