FEATURES Low Rosjon) Fast switching times Low input capacitance Extended safe operating area TO-3P package PRODUCT SUMMARY Improved Inductive ruggedness Rugged polysilicon gate cell structure Improved high temperature rellability Part Number Vos Rosen) (RFP250 400V 0.32 15A _ IRFP251 350V 0.32 15A IRFP252 400V | 0.40 13A IRFP253 350V 0.49 13A MAXIMUM RATINGS 7964 1 42 SAMSUNG -SEMI CONDI UCTOR IRFP 350/361 (352/353 ING... 88D 05204 _ =. N-CHANNE POWER MOSFETS. 48 DE re? 7464442 ooos2o4 a ff TO-3P Characteristic IRFP350 IRFP351 IRFP352 IRFP353 Unit Drain-Source Voltage (1) 400 350 400 350 Vde Drain-Gate Voltage (Ras=1.OMQ) (1) 400 350 400 350 Vde Gate-Source Voltage +20 Vde Continuous Drain Current Tc=25C 16 15 13 13 Adc Continuous Drain Current To= 100C 9.0 9.0 8.0 8.0 Ade Drain CurrentPulsed (3) 60 60 2 62 Adc Gate CurrentPulsed +1.5 Adc Total Power Dissipation @ To=25C Derate above 25C 150 1.2 Watts Wie Operating and Storage Junction Temperature Range Ty, Tstg 55 to 150 C Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds Th 300 c Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ce SAMSUNG SEMICONDUCTOR 203 _ PT 39379 ica _98D 05205 D T3413. N-CHANNEL . 364142 SAMSUNG, SEMICONDUCTOR INC. _ , - POWER MOSFETS ~~ TRFP350/351/352/353 Wa DE Besuunu2 0005ce05 oO ELECTRICAL CHARACTERISTICS (Te=25C unlass otherwise specified) Characteristic Symbol| Type |Min| Typ | Max |Units Test Conditions : erseelaoo] | |v fenov Drain-Source Breakdown BVoss Woltage IRFP351), v lp=250 IRFP353 7) p=250}A Gate Threshold Vottage Vestn | ALL |2.0} | 4.0 | V_ |Vps=Ves, Ipb=250uA Gate-Source Leakage Forward] less ALL | ~ | [100] nA |Vas=20V '|Gate-Source Leakage Reverse] lass | ALL | | |-100] na \Vas=20V Zero Gate Voltage loss ALL | | 250] uA |Vops=Max. Rating, Ves=O0V Drain Current | | 1000] pA \Vos=Max. RatingX0.8, Ves=OV, To=125C Ineccs 1s| A . in- IRFP351 ~ On-State Drain-Source _ Djon} Vps>lojony%Rosion) max, Vas=10V Current (2) IRFP352 inFp353| S| | | A | (RFP350 oo [pres {0.25} 03] 9 Static Drain-Source On-State Rosjon) Vas=10V, Ip=8.0A Resistance (2) IRFP352 ; iRFP353| ~ | 0-9 | 04 | & Forward Transconductance (2}| gts ALL |8.0] 11 - B [Vos>Io(on)XApsten} max. ID=8.0A Input Capacitance Cisg- | ALL | |2630/3000) pF Output Capacitance Coss ALL | 390] 600 pF |Ves=OV, Vos=25V, f=1.0MHz Reverse Transfer Capacitance} Cress ALL |130] 200 | pF Turn-On Delay Time talon) ALL |j] | 35 | ns JRise Time tr ALL |--| | 65 | ns [Voo=0.5BVpss, In>=8.0A, Zo=4.7 2 ; (MOSFET switching times are essentially Tum-Off Delay Time tayo) | ALL | | | 150 | 8 lindependent of operating temperature.) Fail Time te ALL lT 75 as Total Gate Charge (Gate-Source Plus Gate-Drain| Ga j ALL | | 73 | 120 | nC Wveg=10V, Ip=18A, Vos=0.8 Max. Rating (Gate charge is essentially independent of Gate-Source Charge Qos ALL | | 14 _[ac operating temperature. See Fig. 8 page 21 Gate-Drain (Miller) Charge Qoa ALL {59 - nc THERMAL RESISTANCE Junction-to-Case Rintc ALL- | | - [0.83 | K/W Case-to-Sink Rincs ALL |0.1 | K/W {Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL -|- 80 | K/W |Free Air Operation Notes: (1) Ty=25C to 150C . (2) Pulse test: Pulse width<300us, Duty Cycles 2% . (3) Repetitive rating: Pulse width limited by max. junction temperature Ge sawsunc SEMICONDUCTOR 20411a Tete < 1_7964142 SAMSUNG SEMICONDUCTOR ING. 98D 05206 D7-34-/3 ee ASE et) NECHANNEL ~~ IRFP350/351/352/353 POWER MOSFETS 46 De i PAIbYLYe goosSeok 4, i SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Symbo!| Type {Min| Typ | Max |Units - Test Conditions : : ereso _lelasla Gontinuous Source Current Is IRFP351 Body Diode . (Body Diode) tnepaeal ~ | | 13 | A [Modified MOSFET symbol - showing the integral . jReReso ! | 60] a [reverse P-N junction rectifier Pulse Source Current loa IRFP351 . (Body Diode) (3) wmFPss2} | | go | 7 IRFP353 q - |. #RERRSO] _| _ | 4.6 | v fro2sec, ig=15A, Vos=0V Diode Forward Voltage (2) Vsp IRFP352 1.6 | V lte=28C. b= = ; IRFP353| ~ | 7 . c=25C, Is=13A, Ves=0V |Reverse Recovery Time tr | ALL | [1000] | ns |T=160C, p=15A, dip/dt=100A/is Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 24 10 20 a & & = a 1 yw = = = < ~ < G A c = = 3 5 3 z z < a = g rd a 3 S 4 ~ 2 50 0 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) . Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typicat Output Characteristics Typical Transfer Characteristics a iu a wi & = = < - c g s c 3 3 z g z & 5 a 3 o : 10 2 5 10 20 50 100 200 500 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics * Maximum Safe Operating Area GEE samsuna SEMICONDUCTOR 205a 728 142_ SAMSUNG, SEMICOND OR, Nc _ _----- 280. 05207, __B 7-34-13 Sin, te ane Pd N-CHANNEL . arakcaenaesaes ~~ BOWER MOSFETS ee OOO05e0? 3 I or 9 io o _ | = j 1. uty Factor ont THERMAL IMPEDANCE (PER UNIT) 2 n Per Unt pase*Rgx0 Aa deg CW TasTo Pou Zeuc (t) nscirrindc, NORMALIZED EFFECTIVE TRANSIENT 6 10 2 6 2 5 107 2 5 5 2 tt. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration a Ls) oO gts, TRANSCONOUCTANCE (SIEMENS) mn fon, REVERSE DRAIN CURRENT (AMPERES) a n t 4 8 1 a 1 2 3 4 5 6 fo, ORAIN CURRENT (AMPERES) . Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transconductance Vs. Drain Current Typical SourceDrain Diode Forward Voitage 2.5 > = yp > on o Rosen) DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2 an BVpss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) -40 0 40 @0 120 160 ono TJ, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature ce SAMSUNG SEMICONDUCTOR : 2067984142 12_SAMSUNG_ SEMICONDUCTOR INC. = _ 98D 05208 bp 9 18 IRFP350/351/352/353 ve Wesuuau2 oons2oa 5 + C. GAPACITANCE (pF) Vos, DRAIN-TO-SOURCE VOLTAGE {VOLTS) Typical Capacitance Vs. Orain to Source Voltage 2 DURATION rama Tn25"C OF 2 Rosjor}, ORAIN-TO-SOURCE ON RESISTANCE (OHMS) o 15 30 45 60 75 . ip, DRAIN CURRENT (AMPERES) - Typical On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) tp, DRAIN CURRENT (AMPERES) ~~ 9 wu NCHANNEL POWER MOSFETS T-2G-/3 Qy, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature cee SAMSUNG SEMICONDUCTOR 207