SiS606BDN www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK(R) 1212-8 Single * TrenchFET(R) Gen IV power MOSFET D D 8 D 7 D 6 5 * Very low RDS - Qg figure-of-merit (FOM) * Tuned for the lowest RDS - Qoss FOM * 100 % Rg and UIS tested 3. 3 m m 1 3.3 mm Top View * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S 4 S G Bottom View APPLICATIONS * Primary side switch PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration D * Synchronous rectification * DC/DC converter 100 0.0174 0.0205 15.1 35.3 a, g Single G * Motor drive switch * Battery and load switch S * Industrial N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiS606BDN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 C) SYMBOL VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Pulsed drain current (t = 100 s) ID IDM Continuous source-drain diode current TC = 25 C TA = 25 C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 C TC = 70 C Maximum power dissipation TA = 25 C TA = 70 C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 100 20 35.3 28.2 9.4 b, c 7.5 b, c 80 47.2 3.3 b, c 20 20 52 33.3 3.7 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ W C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t 10 s RthJA 24 33 C/W 1.9 2.4 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 C/W g. TC = 25 C S17-1638-Rev. A, 30-Oct-17 Document Number: 76792 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS606BDN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 A 100 - - VDS/TJ ID = 10 mA - 81 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 A - -7.5 - Gate-source threshold voltage VDS temperature coefficient mV/C VGS(th) VDS = VGS, ID = 250 A 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 70 C - - 15 VDS 10 V, VGS = 10 V 40 - - A VGS = 10 V, ID = 10 A - 0.0145 0.0174 VGS = 7.5 V, ID = 10 A - 0.0158 0.0205 VDS = 15 V, ID = 10 A - 46 - - 1470 - - 132 - - 11.2 - - 20 30 - 15.1 22.7 - 6.45 - - 3.5 - A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 50 V, VGS = 0 V - 22 - Gate resistance Rg f = 1 MHz 0.2 0.76 1.4 - 12 24 - 5 10 - 19 38 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 10 A VDS = 50 V, VGS = 7.5 V, ID =10 A td(on) tr td(off) VDD = 50 V, RL = 5 , ID 10 A, VGEN = 10 V, Rg = 1 tf - 5 10 td(on) - 15 30 - 6 12 - 19 38 - 5 10 tr td(off) VDD = 50 V, RL = 5 , ID 10 A, VGEN = 7.5 V, Rg = 1 tf pF nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 C IS = 5 A, VGS = 0 V IF = 10 A, di/dt = 100 A/s, TJ = 25 C - - 47.2 - - 80 - 0.78 1.1 V - 43 86 ns - 72 144 nC - 33 - - 10 - A ns Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1638-Rev. A, 30-Oct-17 Document Number: 76792 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS606BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 80 90 VGS = 10 V thru 6V 72 2nd line ID - Drain Current (A) 48 VGS = 5 V 32 54 TC = 25 C 36 18 16 TC = -55 C TC = 125 C VGS = 4 V 0 0 0 2 4 6 8 10 0 2 4 Output Characteristics Transfer Characteristics 10000 Ciss 1600 0.016 100 VGS = 10 V 0.014 1000 1200 1st line 2nd line 1000 VGS = 7.5 V 2nd line C - Capacitance (pF) 0.02 1st line 2nd line 2nd line RDS(on) - On-Resistance () 2000 10000 0.018 800 0.012 48 64 Crss 0 10 32 100 Coss 400 16 10 0 80 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 2.5 ID = 10 A 8 1000 1st line 2nd line 6 VDS = 25 V, 50 V, 75 V 100 2 0 10 4.2 8.4 12.6 16.8 21 2nd line RDS(on) - On-Resistance (Normalized) 10000 0 100 Axis Title 10 4 10 Axis Title Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 8 VGS - Gate-to-Source Voltage (V) 2nd line 0.022 0 6 VDS - Drain-to-Source Voltage (V) 2nd line 10000 ID = 10 A 2.1 VGS = 10 V VGS = 7.5 V 1.3 100 0.9 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1638-Rev. A, 30-Oct-17 1000 1.7 1st line 2nd line 2nd line ID - Drain Current (A) 64 Document Number: 76792 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS606BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 0.6 10000 10000 0.2 2nd line VGS(th) - Variance (V) 1000 TJ = 150 C TJ = 25 C 1 100 1000 -0.2 1st line 2nd line 10 1st line 2nd line 2nd line IS - Source Current (A) 100 ID = 5 mA -0.6 100 ID = 250 A 0.1 -1.0 0.01 -1.4 10 0 0.3 0.6 0.9 1.2 10 -50 1.5 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.1 10000 500 10000 400 0.08 1000 300 1st line 2nd line TJ = 125 C 0.04 2nd line Power (W) 1000 0.06 1st line 2nd line 2nd line RDS(on) - On-Resistance () ID = 10 A 200 100 100 0.02 100 TJ = 25 C 0 10 2 4 6 8 0 0.0001 10 10 0.001 0.01 0.1 1 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 IDM limited ID limited 100 s 1000 1 ms 10 ms 1 Limited by RDS(on) (1) 100 ms 1100 s 10 s DC 0.1 0.01 BVDSS limited TA = 25 C single pulse 0.001 0.01 (1) 1st line 2nd line 2nd line ID - Drain Current (A) 10 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1638-Rev. A, 30-Oct-17 Document Number: 76792 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS606BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 40 10000 1000 24 1st line 2nd line 2nd line ID - Drain Current (A) 32 16 100 8 0 10 0 25 50 75 100 125 150 TC - Case Temperature (C) 2nd line Current Derating a Axis Title Axis Title 65 10000 2 52 10000 1.6 1.2 1st line 2nd line 26 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 39 0.8 100 13 100 0.4 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (C) 2nd line TA - Ambient Temperature (C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1638-Rev. A, 30-Oct-17 Document Number: 76792 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS606BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes: 0.2 0.1 PDM 0.1 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 81 C/W 0.05 0.02 3. TJM - TA = PDMZthJA 0.001 0.01 100 (t) 4. Surface mounted Single pulse 0.01 0.0001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.1 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76792. S17-1638-Rev. A, 30-Oct-17 Document Number: 76792 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix D4 PowerPAK(R) 1212-8, (Single / Dual) W H E2 E4 L K M e 1 Z D5 D D2 2 2 D1 8 1 5 4 4 b 3 L1 E3 A1 Backside view of single pad H 2 E1 E Detail Z L K E2 E4 D2 D3(2x) D4 c A H 1 D1 2 K1 Notes 1. Inch will govern 2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs D2 3 4 b D5 E3 Backside view of dual pad DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 typ. D5 2.3 typ. 0.0185 typ 0.090 typ E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.034 typ. 0.013 typ. e 0.65 BSC 0.026 BSC K 0.86 typ. K1 0.35 - 0.034 typ. - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0 - 12 0 - 12 W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: S16-2667-Rev. M, 09-Jan-17 DWG: 5882 Revison: 09-Jan-17 Document Number: 71656 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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