SiS606BDN
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S17-1638-Rev. A, 30-Oct-17 1Document Number: 76792
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
• Very low RDS - Qg figure-of-merit (FOM)
• Tuned for the lowest RDS - Qoss FOM
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• Primary side switch
•DC/DC converter
• Motor drive switch
• Battery and load switch
• Industrial
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. TC = 25 °C
PRODUCT SUMMARY
VDS (V) 100
RDS(on) max. () at VGS = 10 V 0.0174
RDS(on) max. () at VGS = 7.5 V 0.0205
Qg typ. (nC) 15.1
ID (A) 35.3 a, g
Configuration Single
PowerPAK
®
1212-8 Single
Top View
1
3.3 mm
3.3 mm
Bottom View
1
S
1
S
2
S
3
S
4
G
D
8
D
7
D
6
D
5
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiS606BDN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V
Gate-source voltage VGS ± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
35.3
A
TC = 70 °C 28.2
TA = 25 °C 9.4 b, c
TA = 70 °C 7.5 b, c
Pulsed drain current (t = 100 μs) IDM 80
Continuous source-drain diode current TC = 25 °C IS
47.2
TA = 25 °C 3.3 b, c
Single pulse avalanche current L = 0.1 mH IAS 20
Single pulse avalanche energy EAS 20 mJ
Maximum power dissipation
TC = 25 °C
PD
52
W
TC = 70 °C 33.3
TA = 25 °C 3.7 b, c
TA = 70 °C 2.4 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) c260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient bt 10 s RthJA 24 33 °C/W
Maximum junction-to-case (drain) Steady state RthJC 1.9 2.4
SiS606BDN
www.vishay.com Vishay Siliconix
S17-1638-Rev. A, 30-Oct-17 2Document Number: 76792
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS temperature coefficient VDS/TJID = 10 mA - 81 - mV/°C
VGS(th) temperature coefficient VGS(th)/TJID = 250 μA - -7.5 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA
Zero gate voltage drain current IDSS
VDS = 100 V, VGS = 0 V - - 1 μA
VDS = 100 V, VGS = 0 V, TJ = 70 °C - - 15
On-state drain current aID(on) VDS 10 V, VGS = 10 V 40 - - A
Drain-source on-state resistance aRDS(on)
VGS = 10 V, ID = 10 A - 0.0145 0.0174
VGS = 7.5 V, ID = 10 A - 0.0158 0.0205
Forward transconductance agfs VDS = 15 V, ID = 10 A - 46 - S
Dynamic b
Input capacitance Ciss
VDS = 50 V, VGS = 0 V, f = 1 MHz
- 1470 -
pFOutput capacitance Coss - 132 -
Reverse transfer capacitance Crss - 11.2 -
Total gate charge Qg
VDS = 50 V, VGS = 10 V, ID = 10 A - 20 30
nCVDS = 50 V, VGS = 7.5 V, ID =10 A
- 15.1 22.7
Gate-source charge Qgs -6.45-
Gate-drain charge Qgd -3.5-
Output charge Qoss VDS = 50 V, VGS = 0 V - 22 -
Gate resistance Rgf = 1 MHz 0.2 0.76 1.4
Turn-on delay time td(on)
VDD = 50 V, RL = 5 , ID 10 A,
VGEN = 10 V, Rg = 1
-1224
ns
Rise time tr-510
Turn-off delay time td(off) -1938
Fall time tf-510
Turn-on delay time td(on)
VDD = 50 V, RL = 5 , ID 10 A,
VGEN = 7.5 V, Rg = 1
-1530
Rise time tr-612
Turn-off delay time td(off) -1938
Fall time tf-510
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C - - 47.2 A
Pulse diode forward current ISM --80
Body diode voltage VSD IS = 5 A, VGS = 0 V - 0.78 1.1 V
Body diode reverse recovery time trr
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
-4386ns
Body diode reverse recovery charge Qrr - 72 144 nC
Reverse recovery fall time ta-33-
ns
Reverse recovery rise time tb-10-
SiS606BDN
www.vishay.com Vishay Siliconix
S17-1638-Rev. A, 30-Oct-17 3Document Number: 76792
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
16
32
48
64
80
0246810
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 6V
VGS = 4 V
VGS = 5 V
10
100
1000
10000
0.012
0.014
0.016
0.018
0.02
0.022
0 1632486480
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 10 V
VGS = 7.5 V
10
100
1000
10000
0
2
4
6
8
10
0 4.2 8.4 12.6 16.8 21
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
V
DS
= 25 V, 50 V, 75 V
I
D
= 10 A
0
18
36
54
72
90
0246810
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
400
800
1200
1600
2000
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 10 A
VGS = 7.5 V
VGS = 10 V
SiS606BDN
www.vishay.com Vishay Siliconix
S17-1638-Rev. A, 30-Oct-17 4Document Number: 76792
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C TJ= 25 °C
10
100
1000
10000
0
0.02
0.04
0.06
0.08
0.1
246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
ID= 10 A
TJ= 125 °C
10
100
1000
10000
-1.4
-1.0
-0.6
-0.2
0.2
0.6
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
VGS(th) - Variance (V)
TJ- Temperature (°C)
2nd line
ID= 250 µA
ID= 5 mA
10
100
1000
10000
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by
RDS(on) (1)
TA= 25 °C
single pulse
BVDSS limited
100 ms
10 ms
1 ms
100 µs
10 s
DC
1 s
IDlimited
SiS606BDN
www.vishay.com Vishay Siliconix
S17-1638-Rev. A, 30-Oct-17 5Document Number: 76792
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0
8
16
24
32
40
0255075100125150
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TC- Case Temperature (°C)
2nd line
10
100
1000
10000
0
13
26
39
52
65
0255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
TC- Case Temperature (°C)
2nd line
10
100
1000
10000
0
0.4
0.8
1.2
1.6
2
0 255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
TA- Ambient Temperature (°C)
2nd line
SiS606BDN
www.vishay.com Vishay Siliconix
S17-1638-Rev. A, 30-Oct-17 6Document Number: 76792
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76792.
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
P
DM
t
1
t
2
1. Duty cycle, D =
2. Per unit base = R
thJA
= 81 °C/W
3. T
JM
-T
A
= P
DM
Z
thJA (t)
4. Surface mounted
t
1
t
2
Notes:
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
Package Information
www.vishay.com Vishay Siliconix
Revison: 09-Jan-17 1Document Number: 71656
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® 1212-8, (Single / Dual)
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 0.00 - 0.05 0.000 - 0.002
b 0.23 0.30 0.41 0.009 0.012 0.016
c 0.23 0.28 0.33 0.009 0.011 0.013
D 3.20 3.30 3.40 0.126 0.130 0.134
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
D3 0.48 - 0.89 0.019 - 0.035
D4 0.47 typ. 0.0185 typ
D5 2.3 typ. 0.090 typ
E 3.20 3.30 3.40 0.126 0.130 0.134
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 1.75 1.85 1.98 0.069 0.073 0.078
E4 0.034 typ. 0.013 typ.
e 0.65 BSC 0.026 BSC
K 0.86 typ. 0.034 typ.
K1 0.35 - - 0.014 - -
H 0.30 0.41 0.51 0.012 0.016 0.020
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
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Revision: 08-Feb-17 1Document Number: 91000
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