Cd eackana Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data Features Low Noise Figure Excellent Uniformity in Product Specifications Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) Tape-and-Reel Packaging Option Available Specifications 1.9 GHz; 2 V, 15 mA (Typ.) 0.4 dB Noise Figure 18 dB Associated Gain 11 dBm Output Power at 1 dB Gain Compression 21 dBm Output 3 Order Intercept Applications Low Noise Amplifier for Cellular/PCS Handsets LNA for WLAN, WLL/RLL, LEO, and MMDS Applications General Purpose Discrete PHEMT for Other Ultra Low Noise Applications Surface Mount Package SOT-343 Pin Connections and Package Marking DRAIN [|_|] SOURCE | x |_|] source O. Le) |_|] GATE Note: Top View. Package marking provides orientation and identification. 5P = Device code x = Date code character. Anew character is assigned for each month, year. ATF-35143 Description Hewlett Packards ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured perfor- mance, ATF-35143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requir- ing super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range. Other PHEMT devices in this family are the ATF-34143 and the ATF-33143. The typical specifica- tions for these devices at 2 GHz are shown in the table below: Part No. Gate Width | Bias Point | NF (dB) | Ga (dB) | OIP3 (dBm) ATF-33143 1600 w AV, 80mA 0.5 15.0 33.5 ATF-34143 800 uw AV, 60mA 0.5 17.5 31.5 ATF-35143 400 2V,15mA 0.4 18.0 21.0ATF-35143 Absolute Maximum Ratings!! Absolute Symbol Parameter Units Maximum Vos Drain - Source Voltage /! Vv 5.5 Vos Gate - Source Voltage /! Vv 5 VGp Gate Drain Voltage /! Vv 5 Ips Drain Current!?! mA Tass! P aiss Total Power Dissipation 4) mW 300 Pin max RF Input Power dBm 14 Tou Channel Temperature ae 160 TstG Storage Temperature a -65 to 160 Gi. Thermal Resistance!) C/W 310 < 3 0 2 4 6 8 Vos (V) Figure 1. Typical Pulsed I-V Curves!61. (Veg = -0.2 V per step) 200 Cpk = 3.7 Std = 0.03 160 120 -3 Std +3 Std 80 40 0 Bg BS 0.2 0.3 0.4 0.5 0.6 0.7 NF (dB) Figure 3. NF @2 GHz, 2 V, 15 mA. LSL=0.2, Nominal=0.37, USL=0.7 Notes: 6. Under large signal conditions, Vgg may 7. swing positive and the drain current may exceed Ij,,. These conditions are acceptable as long as the maximum P4;,, and Pin max ratings are not exceeded. Notes: 1. ad Operation of this device above any one of these parameters may cause permanent damage. Assumes DC quiesent conditions. Vos =0V Source lead temperature is 25C. Derate 3.2 mW/C for T, > 67C. . Thermal resistance measured using 150C Liquid Crystal Measurement method. Product Consistency Distribution Charts ! *! 120 Cpk = 1.73 Std = 0.35 100 80 60 40 20 22 OIP3 (dBm) 23 24 Figure 2. OIP3 @2 GHz, 2 V, 15 mA. LSL=19.0, Nominal=20.9, USL=23.0 160 Cpk = 2.75 Std = 0.17 120 3 Std 80 40 0 16 19 20 GAIN (dB) Figure 4. Gain @ 2 GHz, 2 V, 15 mA. LSL=16.5, Nominal=18.0, USL=19.5 Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match anda realizeable match based on production test requirements. Circuit losses have been de- embedded from actual measurements.ATF-35143 Electrical Specifications T, = 25C, RF parameters measured in a test circuit for a typical device Symbol Parameters and Test Conditions Units | Min. | Typ.2!) Max. Tags tt Saturated Drain Current Vos = 1.5 V, Vs = 0 V mA 40 65 80 VpHl Pinchoff Voltage Vos = 1.5 V, Ips = 10% of Tass Vv -0.65 -0.5 -0.35 Tq Quiescent Bias Current Vas = 0.45 V, Vps = 2 V mA 15 mt! Transconductance Vos = 1.5 V, m = lass/Vp | mmho 90 120 Igpo Gate to Drain Leakage Current Vep =5 V HA 250 Igcs Gate Leakage Current Voep = Ves = 4 V HA 10 150 f = 2 GHz Vos =2 V, Ips =15mA dB 0.4 0.7 = 2 I = A . . NF Noise Figure!! \bs N, Ips = 9m 0.5 0.9 f = 900 MHz Vos =2 V, Ips =15mA dB 0.3 Vos = 2 Vi, Ips = 5 mA 0.4 f= 2 GHz | Vps = 2 Vi Ips = 15 mA dB 16.5 18 19.5 . . Vos = 2 V, Ips = 5S mA 14 16 18 G, Associated Gain! vs es m f = 900 MHz Vos =2 V, Ips =15mA dB 20 Vos = 2 Vi, Ips = 5 mA 18 f = 2 GHz Vos =2 V, Ips =15mA dBm 19 21 OIP3 Output 3" Order Vos = 2 Vi Ips = SMA 14 Intercept Point! 5! f = 900 MHz | Vps=2 Vi Ips=15mA | dBm 19 Vos = 2 Vi, Ips = 5 mA 14 f = 2 GHz Vos = 2 V, Ipse = 15 mA dBm 10 Prep 1 dB Compressed Vos = 2 V, Ipsg = 5 mA 8 Intercept Point) f= 900 MHz |Vps =2 Vi Ipsg= 1SmA | dBm 9 Vos = 2 Vi Ipsg= SmA 9 Notes: 1. Guaranteed at wafer probe level 2. Typical value determined from a sample size of 450 parts from 9 wafers. 3. 2V5 mA min/max data guaranteed via the 2V 15 mA production test. 4. Measurements obtained using production test board described in Figure 5. 5. Pou = -10 dBm per tone Input 50 Ohm Input 50 Ohm Output __| Transmission Matching Circuit Transmission |__ Line Including T_mag = 0.66 DUT Line Including Gate Bias T T_ang = 5 Drain Bias T (0.5 dB loss) (0.4 dB loss) (0.5 dB loss) Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, Pjqg, and OIP3 measure - ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements.ATF-35143 Typical Performance Curves 30 25 _ nN oa o OIP3, Pigp (dBm) 3 30 50 8660 Ipsa (mA) Figure 6. OIP3 and Pj gp vs. Bias at 2 GHz] 0 10 20 40 20 2.5 Ga (dB) NF (dB) 0.5 0 30 50 60 Ipsa (mA) Figure 8. NF and G, vs. Bias at 2 GHz.4] 0 10 20 40 25 20 = 15 wor E -L----..] a = = 10 uo a 5 eee- 2V 0 -3V7 4v 5 | 0 20 40 60 80 Ips (mA) Figure 10. P, gp vs. Bias (Active Bias) Tuned for NF @2V, 15 mA at 2 GHz] Notes: 30 25 eee = . i Zz 20 a ua o co 15 2 o) 10 5 0 Ipsq (mA) Figure 7. OIP3 and P, gp vs. Bias at 900 MHz.0.1 24 22 a 20 o 2 = 18 16 14 0 10 20 30 40 50 60 Ipsq (mA) Figure 9. NF and G, vs. Bias at 900 MHz.01 20 =< 15 = if eswonen = 7, & 10 fee zs G a r 3 o 5 i i) sees av Fk 3v " _<V 5 | 0 20 40 60 80 Ips (mA) Figure 11. P, gp vs. Bias (Active Bias) Tuned for NF @2V, 15 mA at 900 MHz.U1 1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2V 15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. Pigg measurements are performed with passive biasing. Quiescent drain current, Ipgq, is set with zero RF drive applied. As Pp is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Ipgq the device is running closer to class B as power output approaches Pygg. This results in higher Pjgg and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a Vpg = 4 Vand Ipsg = 5 mA, Ig increases to 30 mA as a Pj gp of +15 dBm is approached.ATF-35143 Typical Performance Curves, continued Fmin (dB) 1.50 1.25 1.00 0.75 0.50 0.25 v 7 Aer ff. A" - s=-- SmA 4 ma a 30mA 2 4 6 8 10 FREQUENCY (GHz) Figure 12. Fin vs. Frequency and Current at 2 V. 22 20 18 G, (dB) 16 14 12 \ uN N Y N J] uN Lf | C4 % Lo? ee 25C Ne -0c | 35C J ON o %, al *, Qe - o* * o y - AN ~ 7 Nees 2 4 6 8 FREQUENCY (GHz) 0.8 0.2 Figure 14. Fin, and G, vs. Frequency and Temperature, Vps=2 V, Ips=15 mA. 25 20 15 10 OIP3, P45 (dBm), Gain (dB) - ae om a 4 / / i i= Pr aees | : LE NX Teese Pigs | i - os ; Gain - NF 20 40 60 80 Ips (mA) 2.5 0.5 Figure 16. OIP3, Pigg, NF and Gain vs. Bias"] ( Active Bias, 2 V, 3.9 GHz). Notes: Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2V 15mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have 1. been de-embedded from actual measurements. NF (dB) 25 T s=-- 5mA 15mA 30mA 20 a z= 15 E Ww mw ~ 10 = ~~, ~.PS4 5 0 2 4 6 8 10 FREQUENCY (GHz) Figure 13. Associated Gain vs. Frequency and Current at 2 V. 25 Tt -_ 20 Ap =< e % wee 5 f = = a 15 q we-= 25C & -40C 3 a 35C 10 eb 5 i) 2 4 6 8 FREQUENCY (GHz) Figure 15. OIP3 and Pg vs. Frequency and Temperaturel!.2], Vps=2 V, Ips=15 mA. 25 20 OIP3, Pip (dBm), Gain (dB) 3 5 Ips (mA) Figure 17. OIP3, Pigg, NF and Gain vs. Bias] (Active Bias, 2 V, 5.8 GHz). Pag Measurements are performed with passive biasing. Quiescent drain current, Ipgq, is set with zero RF drive applied. As Pj gp is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Igsq the device is running closer to class B as power output approaches P,gp. This results in higher P;gp and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a Vpg = 4V and Ipsg= 5 mA, Ig increases to 30 mA as a Pjgp of +15 dBm is approached.ATF-35143 Typical Scattering Parameters, Vps = 2 V, Ipp =5 mA Freq. Si So Si2 S22 MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. = Ang. dB 0.50 0.99 -16.90 |} 13.34 4.64 | 166.04] -31.70 | 0.026 | 77.91 | 0.73 -12.47 22.52 0.75 0.98 26.37 | 13.29 4.62 | 157.78 | -28.18 | 0.039 | 71.12 | 0.72 -17.53 20.83 1.00 0.97 -34.76 | 13.16 4.55 | 150.72 | -25.85 | 0.051 | 65.76 | 0.71 -23.33 19.50 1.50 0.94 50.59 | 12.83 4.38 | 137.02 | -22.73 | 0.073 | 54.85 | 0.68 -34.88 17.78 1.75 0.91 58.26 | 12.66 4.30 | 130.38 | -21.62 | 0.083 | 49.69 | 0.67 40.49 17.13 2.00 0.90 65.74} 12.44 4.19 | 123.90 | -20.72 | 0.092 | 44.45 | 0.65 -46.03 16.58 2.50 0.85 80.62 | 12.04 4.00 | 111.27] -19.33 | 0.108 | 34.61 | 0.62 -56.68 15.69 3.00 0.81 95.48} 11.61 3.81 99.08 | -18.27 | 0.122 | 25.21 | 0.59 -66.71 14.94 4.00 0.72 | -125.99| 10.71 3.43 75.75 | -17.08 | 0.140 6.95 | 0.52 -85.11 13.89 5.00 0.66 | -156.09| 9.79 3.09 53.63 | -16.48 | 0.150 9.83 | 045 | -102.71 13.13 6.00 0.62 | 174.97] 8.93 2.80 32.77 | -16.14 | 0.156 | -25.73 | 0.38 | -120.16 12.53 7.00 0.60 | 145.61} 8.06 2.53 12.43 | -16.08 | 0.157 | -41.00 |} 0.31 | -138.01 12.07 8.00 0.60 | 118.39} 7.20 2.29 -7.12 | -16.31 | 0.153 | -54.14 | 0.25 | -157.10 11.75 9.00 0.62 93.15 | 6.26 2.06 | -26.14] -16.59 | 0.148 | -67.05 | 0.20 | -178.27 11.19 10.00 0.66 71.31) 5.43 1.87 | -44.14] -16.89 | 0.143 | -78.09 | 0.16 | 157.62 9.63 11.00 0.70 50.91] 4.58 1.69 | -62.85 | -17.14 | 0.139 | -88.99 | 0.14 | 121.82 8.81 12.00 0.72 31.04} 3.64 1.52 | -81.42 | -17.52 | 0.133 | -100.38 | 0.17 82.33 7.87 13.00 0.74 11.26] 2.56 1.34 | -99.46 | -18.13 | 0.124 | -111.06 | 0.22 53.17 6.79 14.00 0.76 3.08] 1.45 1.18 |-115.94 | -18.79 | 0.115 | -119.00 | 0.28 27.32 5.86 15.00 0.82 -14.26} 0.43 1.05 | -132.24 | -19.25 | 0.109 | -127.12 | 0.34 6.01 5.89 16.00 0.82 -26.64 | -0.72 0.92 |-149.24 | -19.58 | 0.105 | -135.42 | 0.42 -10.69 4.84 17.00 0.84 -38.94 | -1.83 0.81 |-164.44 | -19.74 | 0.103 | -143.49 | 0.49 -22.32 4.62 18.00 0.86 54.78 | -3.02 0.71 | 179.28 | -20.18 | 0.098 | -152.36 | 0.56 -35.90 4.04 ATF-35143 Typical Noise Parameters Vos = 2 Vi Ips = 5 mA 25 Freq. Frnin TV opt Russo G, GHz dB Mag. Ang. . dB _ oh 0.5 0.10 0.91 6.4 0.22 19.3 = \ MSG 0.9 0.12 0.87 15.0 0.22 17.9 eS 1.0 0.14 0.86 17.2 0.22 17.5 5 40 ~~~ 1.5 0.20 0.81 28.0 0.22 16.3 < Sr | ~s. Nes 1.8 0.23 0.78 33.4 | 0.21 | 158 g 5 >< 2.0 0.27 0.76 38.8 0.21 15.4 = *s 2.5 0.33 0.71 50.0 0.19 14.7 S, 3.0 0.39 0.66 61.9 0.17 14.0 5 4.0 0.52 0.58 87.2 0.13 12.7 5 10 18 20 5.0 0.64 0.52 114.4 0.09 11.5 FREQUENCY (GHz) 6.0 0.77 0.47 143.2 0.06 10.4 Figure 18. MSG/MAG and IS2,P vs. 7.0 0.89 0.43 1733.5 | 0.05 9.5 Frequency at 2 V, 5 mA. 8.0 1.02 0.41 -155.2 0.07 8.7 9.0 1.14 0.40 -122.9 0.13 8.0 10.0 1.27 0.41 -90.1 0.24 7.5 Notes: 1. Fin values at 2 GHz and higher are based on measurements while the Fyj,, below 2 GHz have been extrapolated. The Fi, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NPS test system. From these measure- ments a true F,,;, is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.ATF-35143 Typical Scattering Parameters, Vp; = 2 V, Ips = 10 mA Freq. Si So Si2 S22 MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. = Ang. dB 0.50 0.99 -18.75 | 15.89 6.23 | 164.76 | -32.40 | 0.024 | 77.63 | 0.63 -14.09 24.14 0.75 0.97 29.11} 15.79 6.16 | 155.98 | -28.87 | 0.036 | 70.58 | 0.61 -19.69 22.30 1.00 0.95 -38.28 | 15.61 6.03 | 148.42 | -26.56 | 0.047 | 64.88 | 0.60 -26.10 21.08 1.50 0.91 55.52} 15.17 5.73 | 133.92 | -23.61 | 0.066 | 54.16 | 0.57 -38.73 19.39 1.75 0.89 63.78 | 14.92 5.57 | 127.01 | -22.62 | 0.074 | 49.11 | 0.56 -44.79 18.75 2.00 0.86 -71.82 | 14.65 5.40 | 120.27] -21.72 | 0.082 | 44.08 | 0.54 -50.70 18.19 2.50 0.81 87.59} 14.11 5.08 | 107.36] -20.35 | 0.096 | 34.60] 0.51 -61.95 17.23 3.00 0.76 | -103.22} 13.54 4.76 95.04 | -19.41 | 0.107 | 25.71 | 0.47 7247 16.48 4.00 0.66 | -134.81} 12.40 4.17 71.95 | -18.27 | 0.122 9.04 | 041 -91.47 15.34 5.00 0.61 | -165.34} 11.29 3.67 50.43 | -17.65 | 0.131 5.97 | 0.34 | -110.05 14.47 6.00 0.58 | 165.88} 10.27 3.26 30.28 | -17.33 | 0.136 | -20.15 | 0.27 | -129.24 13.80 7.00 0.57 | 137.00} 9.27 2.91 10.68 | -17.14 | 0.139 | -33.84 } 0.21 | -150.49 13.21 8.00 0.58 | 110.78} 8.33 2.61 -8.09 | -17.14 | 0.139 | 45.60 | 0.17 | -174.77 12.73 9.00 0.61 86.75} 7.32 2.32 | -26.38 | -17.20 | 0.138 | -57.65 | 0.13 154.01 10.69 10.00 0.65 66.25 | 6.44 2.10 | -43.90 | -17.20 | 0.138 | -68.22 | 0.11 118.18 9.85 11.00 0.69 46.88 | 5.54 1.89 | -61.97 | -17.27 | 0.137 | -79.30 | 0.14 78.36 9.16 12.00 0.72 27.16 | 4.56 1.69 | -79.90 | -17.39 | 0.135 | -90.87 | 0.19 49.57 8.34 13.00 0.74 8.62] 3.45 1.49 | -97.18 | -17.79 | 0.129 | -102.19 | 0.26 29.95 7.35 14.00 0.77 5.28] 2.33 1.31 |-112.92 | -18.20 | 0.123 | -110.80 | 0.33 945 6.51 15.00 0.82 -16.03} 1.29 1.16 | -128.66 | -18.56 | 0.118 | -120.09 | 0.39 -7.98 6.51 16.00 0.82 28.32} 0.19 1.02 | -144.87 | -18.79 | 0.115 | -129.92 | 0.45 -22.30 5.48 17.00 0.84 40.43 | -0.87 0.91 |-159.49 | -18.79 | 0.115 | -139.60 | 0.51 -32.23 5.24 18.00 0.86 56.14 | -1.99 0.80 |-175.19 | -19.33 | 0.108 | -149.17 | 0.57 44.43 4.72 ATF-35143 Typical Noise Parameters Vos = 2 V, Ips = 10mA Freq. Frain T opt Riso Ga GHz dB Mag. Ang. - dB _ 0.5 0.10 | 0.88 50 | O15 | 205 = 0.9 0.11 0.84 14.0 0.15 19.0 1.0 0.12 0.83 16.0 0.15 18.6 5 1.5 0.17 0.77 26.0 0.15 17.5 < 1.8 0.20 0.74 31.9 0.15 16.9 g 2.0 0.23 0.71 37.3 0.14 16.4 = 2.5 0.29 0.66 48.6 0.14 15.7 3.0 0.34 0.60 60.6 0.12 15.0 . 4.0 0.46 0.52 86.8 0.12 13.6 5 10 18 20 5.0 0.58 0.45 115.3 0.08 12.4 FREQUENCY (GHz) 6.0 0.69 0.40 145.8 0.05 11.3 Figure 19. MSG/MAG and S21? vs. 7.0 0.81 0.37 1777 | 0.05 | 103 Frequency at 2 V, 10 mA. 8.0 0.92 0.35 -149.3 0.07 9.5 9.0 1.04 0.35 -115.6 0.12 8.8 10.0 1.16 0.37 -81.8 0.22 8.3 Notes: 1. Fyin values at 2 GHz and higher are based on measurements while the Fyin, below 2 GHz have been extrapolated. The Fj, values are based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP3S test system. From these measurements a true F,,;, is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.ATF-35143 Typical Scattering Parameters, Vp; = 2 V, Ips = 15 mA Freq. Si So Si2 S22 MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. = Ang. dB 0.50 0.99 -19.75 | 17.02 7.10 | 164.04] -32.77 | 0.023 | 77.60 | 0.57 -14.99 24.89 0.75 0.97 -30.58 | 16.90 7.00 | 154.98 | -29.37 | 0.034 | 70.54 | 0.55 -20.86 23.05 1.00 0.95 40.15 | 16.69 6.83 | 147.18 | -27.13 | 0.044 | 64.80 | 0.54 -27.61 21.91 1.50 0.90 58.08 | 16.18 6.44 | 132.28] -24.15 | 0.062 | 54.23 | 0.51 40.74 20.17 1.75 0.87 66.65 | 15.90 6.23 | 125.22 | -23.10 | 0.070 | 49.25 | 0.49 46.95 19.53 2.00 0.84 -74.93 | 15.59 6.02 | 118.41] -22.27 | 0.077 | 44.36 | 0.48 -53.06 18.93 2.50 0.79 91.13} 14.97 5.61 | 105.38 | -20.92 | 0.090 | 35.36 | 0.44 64.59 17.95 3.00 0.73 | -107.08} 14.34 5.21 93.08 | -20.00 | 0.100 | 26.85 | 0.41 -75.32 17.17 4.00 0.64 | -139.07} 13.09 4.51 70.17 | -18.94 | 0.113 11.15 | 0.35 -94.59 16.01 5.00 0.59 | -169.70} 11.90 3.93 49.03 | -18.27 | 0.122 -2.96 | 0.29 | -113.89 15.09 6.00 0.56 | 161.74] 10.81 3.47 29.27 | -17.79 | 0.129 | -16.43 | 0.23 | -134.46 14.30 7.00 0.56 | 133.19} 9.77 3.08 10.04 | -17.59 | 0.132 | -29.47 | 0.17 | -158.65 13.68 8.00 0.57 | 107.56} 8.78 2.75 8.35 | -1746 | 0.134 | 40.80 | 0.14 | 172.14 12.29 9.00 0.60 84.16] 7.75 244 | -26.29]) -17.39 | 0.135 | -52.63 | 0.11 134.01 10.74 10.00 0.64 64.19 | 6.86 2.20 | -43.56 | -17.33 | 0.136 | -63.33 | 0.12 95.85 9.99 11.00 0.68 45.46| 5.93 1.98 | -61.33 | -17.27 | 0.137 | -74.77 | 0.16 63.20 9.34 12.00 0.72 26.66 | 4.93 1.76 | -78.94 | -17.27 | 0.137 | -86.46 | 0.22 40.01 8.57 13.00 0.74 7.70} 3.80 1.55 -95.93 | -17.59 | 0.132 | -98.11 | 0.29 23.11 7.62 14.00 0.77 5.93] 2.68 1.36 |-111.53 | -17.92 | 0.127 |-107.51 | 0.36 3.55 6.79 15.00 0.82 -16.54] 1.63 1.21 |-126.76 | -18.20 | 0.123 |-117.16 | 0.41 -12.09 6.76 16.00 0.82 28.76} 0.54 1.06 |-142.70 | -18.49 | 0.119 | -127.03 | 0.47 -26.21 5.81 17.00 0.84 40.79 | -0.49 0.95 | -157.02 | -18.49 | 0.119 | -137.06 | 0.53 -35.57 5.55 18.00 0.86 56.40 | -1.60 0.83 | -172.47 | -18.94 | 0.113 | -147.50 | 0.58 47.29 5.06 ATF-35143 Typical Noise Parameters Vos = 2 Vi Ips = 15mA Freq. Fain Vopt Russo G, GHz dB Mag. Ang. - dB _ 0.5 0.10 0.88 45 0.19 20.9 S 0.9 0.13 0.83 13.1 0.17 19.4 & 1.0 0.14 0.82 15.3 0.16 19.2 z 1.5 0.19 0.76 26.1 0.15 17.9 2 1.8 0.22 0.72 32.6 0.15 17.3 3 2.0 0.23 0.70 36.9 0.14 17.0 = 2.5 0.29 0.64 48.5 0.12 16.2 3.0 0.34 0.58 60.9 0.07 15.4 ; 4.0 0.45 0.49 87.9 0.13 14.1 0 5 10 15 20 5.0 0.56 0.42 117.4 0.07 12.8 FREQUENCY (GHz) 6.0 0.67 0.37 149.0 0.05 11.7 Figure 20. MSG/MAG and |S, vs. 7.0 0.79 0.34 | -178.1 0.05 10.8 Frequency at 2 V, 15 mA. 8.0 0.90 0.33 -144.3 0.07 9.9 9.0 1.01 0.34 -110.2 0.13 9.2 10.0 1.12 0.36 -76.3 0.23 8.6 Notes: 1. Fyin Values at 2 GHz and higher are based on measurements while the F,,;,, below 2 GHz have been extrapolated. The F,,;, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP35 test system. From these measure- ments a true Fyjn is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.ATF-35143 Typical Scattering Parameters, Vp; = 2 V, Ips = 30 mA Freq. Si So Si2 S22 MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. = Ang. dB 0.50 0.99 -20.95 | 18.17 8.10 | 163.18 | -33.56 | 0.021 | 77.39 | 0.49 -15.99 25.87 0.75 0.96 -32.34 | 18.02 7.96 | 153.79 | -30.17 | 0.031 | 70.55 | 0.47 -22.00 24.10 1.00 0.94 42.36} 17.77 7.73 | 145.67 | -27.96 | 0.040 | 65.08 | 0.46 -29.03 22.86 1.50 0.88 61.09} 17.18 7.22 | 130.36] -25.04 | 0.056 | 54.79 | 0.43 42.64 21.11 1.75 0.85 69.98 | 16.85 6.96 | 123.20] -24.01 | 0.063 | 50.12 | 0.41 48.96 20.42 2.00 0.82 -78.53 | 16.50 6.69 | 116.28 | -23.22 | 0.069 | 45.58 | 0.39 -55.19 19.86 2.50 0.76 95.14} 15.81 6.17 | 103.17] -21.94 | 0.080 | 37.15 | 0.36 -66.91 18.87 3.00 0.70 | -111.48] 15.11 5.69 90.88 | -21.01 | 0.089 | 29.29 | 0.34 -77.74 18.06 4.00 0.61 | -143.89|} 13.73 4.86 68.24 | -19.83 | 0.102 14.76 | 0.28 -97.29 16.78 5.00 0.56 | -174.55 | 12.46 4.20 47 A8 | -19.02 | 0.112 1.63 | 0.23 | -117.24 15.74 6.00 0.55 157.19] 11.31 3.68 28.10 | -18.49 | 0.119 | -10.98 | 0.17 | -139.78 14.90 7.00 0.55 129.18 | 10.22 3.24 9.28 | -18.13 | 0.124 | -23.67 | 0.13 | -169.09 14.17 8.00 0.56 | 104.19} 9.20 2.88 -8.75 | -17.79 | 0.129 | -34.72 | 0.11 155,22 11.98 9.00 0.60 8148} 8.15 2.56 | -26.37 |] -17.59 | 0.132 | 46.33 | 0.11 112,23 10.82 10.00 0.64 62.07 | 7.24 2.30 | -43.37] -17.33 | 0.136 | -57.43 | 0.13 77.30 10.15 11.00 0.68 43.83 | 6.29 2.06 | -60.90 | -17.20 | 0.138 | -68.78 | 0.18 51.74 9.51 12.00 0.72 25.46| 5.27 1.84 | -78.22 | -17.14 | 0.139 | -81.32 | 0.24 32.67 8.77 13.00 0.74 681} 4.14 1.61 -94.88 | -17.33 | 0.136 | -93.11 |] 0.31 17.81 7.87 14.00 0.77 6.74] 3.01 1.41 |-110.07 | -17.65 | 0.131 | -103.06 | 0.38 0.45 7.08 15.00 0.82 -17.21 1.94 1.25 |-125.15 | -17.86 | 0.128 | -112.88 | 0.43 -15.44 7.06 16.00 0.83 29.31] 0.87 1.11 |-140.80 | -18.06 | 0.125 | -123.55 | 0.49 -29.37 6.13 17.00 0.85 41.30} -0.15 0.98 |-154.83 | -18.13 | 0.124 | -134.43 | 0.54 -38.55 5.89 18.00 0.87 56.87 | -1.24 0.87 | -170.03 | -18.56 | 0.118 | -144.88 | 0.60 49.70 5.39 ATF-35143 Typical Noise Parameters Vos = 2 V, Ips = 30 mA Fre q- Fain Vopt Russo G, % GHz dB Mag. Ang. - dB _ 28 0.5 0.11 0.87 2.7 0.18 21.6 3S oo 0.9 0.15 0.81 12.1 0.17 20.2 a 1.0 0.16 0.80 14.5 0.16 19.9 z* 15 0.22 0.73 26.3 0.15 18.7 3 10 1.8 0.25 0.69 33.4 0.15 18.0 = ; 2.0 0.27 0.66 38.1 0.14 17.7 2 2.5 0.33 0.60 50.6 0.13 17.0 0 3.0 0.39 0.54 64.2 0.12 16.2 5 4.0 0.52 0.45 94.0 0.10 14.8 0 5 10 15.20 5.0 0.64 0.39 126.5 0.07 13.5 FREQUENCY (GHz) 6.0 0.77 0.34 160.6 0.05 12.4 Figure 21. MSG/MAG and IS1?? vs. 7.0 0.90 0.33 164.7 0.06 11.4 Frequency at 2 V, 30 mA. 8.0 1.02 0.33 -130.3 0.10 10.5 9.0 1.15 0.36 -97.5 0.18 9.7 10.0 1.28 0.40 67.0 0.30 9.1 Notes: 1. Fyin values at 2 GHz and higher are based on measurements while the Fin, below 2 GHz have been extrapolated. The Fj, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP35 test system. From these measure- ments a true F,,;, is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.10 ATF-35143 Typical Scattering Parameters, Vp; = 3 V, Ips = 10 mA Freq. Si So Si2 S22 MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. = Ang. dB 0.50 0.99 -18.76 | 16.07 6.36 | 164.73 | -32.77 | 0.023 | 76.79 | 0.65 -13.67 24.42 0.75 0.97 29.12} 15.97 6.29 | 155.93 | -29.37 | 0.034 | 70.22 | 0.63 -19.08 22.70 1.00 0.95 -38.28 | 15.79 6.16 | 148.37] -27.13 | 0.044 | 64.53 | 0.62 -25.28 21.46 1.50 0.91 55.52} 15.34 5.85 | 133.87 | -24.01 | 0.063 | 54.04 | 0.59 -37.48 19.68 1.75 0.88 63.78 | 15.09 5.68 | 126.95 | -22.97 | 0.071 | 49.13 | 0.57 43.28 19.00 2.00 0.86 -71.79| 14.82 5.51 | 120.22 | -22.05 | 0.079 | 44.06 | 0.56 49.01 18.43 2.50 0.81 87.55 | 14.27 5.17 | 107.29 | -20.82 | 0.091 34.85 | 0.52 -59.84 17.55 3.00 0.75 | -103.15 | 13.71 4.85 95.00 | -19.83 | 0.102 | 25.98 | 0.49 -69.88 16.77 4.00 0.66 | -134.65} 12.56 4.25 71.95 | -18.71 | 0.116 9.56 | 0.42 -87.88 15.63 5.00 0.60 | -165.16} 11.45 3.74 50.50 | -18.13 | 0.124 5.10 | 0.35 | -105.14 14.79 6.00 0.58 | 166.12} 10.43 3.32 30.44 | -17.79 | 0.129 | -19.00 | 0.29 | -122.61 14.11 7.00 0.56 | 137.25) 9.44 2.97 10.91 | -17.65 | 0.131 | -32.32 | 0.23 | -141.22 13.55 8.00 O57 | 11111] 8.51 2.66 -7.80 | -17.59 | 0.132 | -43.61 | 0.18 | -162.07 12.81 9.00 0.60 87.10} 7.51 2.38 | -26.05 | -17.65 | 0.131 | -55.14 | 0.13 172.01 10.75 10.00 0.64 66.58 | 6.64 2.15 43.52 | -17.65 | 0.131 | 65.42] 0.10 | 139.11 9.98 11.00 0.68 47.31] 5.76 1.94 | 61.59] -17.65 | 0.131 | -76.27 |] 0.11 93.44 9.32 12.00 0.71 28.18 | 4.81 1.74 | -79.58 | -17.72 | 0.130 | -87.47 | 0.16 57.88 8.54 13.00 0.74 9.02) 3.71 1.53 -96.96 | -17.99 | 0.126 | -98.60 | 0.23 35.32 7.59 14.00 0.77 482] 2.61 1.35 |-112.95 | -18.34 | 0.121 |-107.41 | 0.29 13.11 6.76 15.00 0.82 -15.65} 1.60 1.20 |-128.77 | -18.56 | 0.118 | -116.63 | 0.35 4.62 6.79 16.00 0.82 28.00} 0.51 1.06 |-145.23 | -18.71 | 0.116 | -126.02 | 0.42 -19.61 5.79 17.00 0.84 40.11} -0.55 0.94 |-160.01 | -18.71 | 0.116 | -136.14 | 0.49 -29.62 5.54 18.00 0.86 55.87 | -1.68 0.82 |-176.05 | -19.25 | 0.109 | -146.13 | 0.55 41,92 5.05 ATF-35143 Typical Noise Parameters Vos = 3 V, Ips = 10mA Freq. Fain Vopt Russo G, GHz dB Mag. Ang. - dB 0.5 0.12 0.87 AT 0.21 20.0 S 0.9 0.16 0.82 13.2 0.19 19.0 & 1.0 0.17 0.81 15.3 0.19 18.8 z 1.5 0.22 0.75 25.9 0.17 17.8 g 1.8 0.26 0.71 32.3 0.16 17.2 = 2.0 0.28 0.68 36.5 0.16 16.7 2 2.5 0.33 0.62 ATT 0.14 15.9 3.0 0.39 0.57 59.6 0.13 15.1 ; 4.0 0.49 0.49 85.4 0.10 13.7 0 5 10 1520 5.0 0.60 0.43 113.6 0.08 12.5 FREQUENCY (GHz) 6.0 0.71 0.38 143.7 0.05 11.4 Figure 22. MSG/MAG and |S! vs. 7.0 0.81 0.36 175.6 0.05 10.4 Frequency at 3 V, 10 mA. 8.0 0.92 0.34 -151.3 0.07 9.6 9.0 1.03 0.34 -117.3 0.12 8.9 10.0 1.13 0.35 -82.7 0.21 8.4 Notes: 1. Fyin values at 2 GHz and higher are based on measurements while the F,,;,, below 2 GHz have been extrapolated. The F,,;, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NPS test system. From these measure- ments a true Fyjn is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.11 ATF-35143 Typical Scattering Parameters, Vp; = 3 V, Ips = 15 mA Freq. Su So1 Sio Sx MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. Ang. dB 0.50 0.99 -19.76 | 17.20 7.24 | 164.03 | -33.15 | 0.022 | 76.95 | 0.60 -14.39 25.17 0.75 0.96 -30.58 | 17.08 7.14 | 154.94 | -29.90 | 0.032 | 69.88 | 0.58 -20.00 23.47 1.00 0.94 40.14 | 16.86 6.97 | 147.12 | -27.54 | 0.042 | 64.59 | 0.57 -26.48 22.20 1.50 0.90 -58.04 | 16.35 6.57 | 132.22 | -24.58 | 0.059 | 54.00 | 0.54 -39.05 20.47 1.75 0.87 66.61 | 16.06 6.35 | 125.16 | -23.48 | 0.067 | 49.23 | 0.52 -45.00 19.78 2.00 0.84 -74.88 | 15.75 6.13 | 118.36 | -22.62 | 0.074 | 44.39 | 0.50 -50.83 19.19 2.50 0.78 91.02 | 15.13 5.71 | 105.32 | -21.41 | 0.085 35.29 | 0.47 -61.71 18.27 3.00 0.73 |-106.95 | 14.50 5.31 93.02 | -20.45 | 0.102 | 27.00 | 0.44 -71.87 17.47 4.00 0.63 | -138.86 | 13.24 4.59 70.17 | -19.41 | 0.107 11.47 | 0.37 -89.81 16.32 5.00 0.58 | -169.42 | 12.05 4.00 49.09 | -18.79 | 0.115 2.18 | 0.31 | -107.23 15.42 6.00 0.56 | 162.05 | 10.97 3.53 29.39 | -18.34 | 0.121 | -15.36 | 0.24 | -125.21 14.66 7.00 0.55 133.54 | 9.93 3.14 10.23 | -18.06 | 0.125 | -27.97 | 0.19 | -145.42 14.00 8.00 0.56 | 107.88] 8.96 2.81 -8.11 | -17.92 | 0.127 | -38.89 | 0.14 | -168.81 12,23 9.00 0.60 84.56 | 7.95 2.50 | -26.04 | -17.86 | 0.128 | -50.41 | 0.11 158.79 10.87 10.00 0.64 64.57 | 7.06 2.26 | -43.28 | -17.72 | 0.130 | -60.57 | 0.09 | 118.59 10.16 11.00 0.68 45.84 | 6.16 2.03 -61.06 | -17.59 | 0.132 | -71.45 | 0.12 75.36 9.55 12.00 0.71 27.11} 5.19 1.82 | -78.75 | -17.59 | 0.132 | -83.32 | 0.18 46.94 8.80 13.00 0.74 8.18 | 4.09 1.60 | -95.88 | -17.79 | 0.129 | -94.36 | 0.25 27.91 7.86 14.00 0.77 5.58 | 2.98 1.41 |-111.57 | -18.06 | 0.125 |-103.78 | 0.31 7.94 7.09 15.00 0.82 -16.18 | 1.96 1.25 |-127.09 | -18.27 | 0.122 |-113.43 | 0.37 -8.87 7.04 16.00 0.82 28.41] 0.88 1.11 |-143.31 | -18.42 | 0.120 |-123.35 | 0.44 -23.42 6.09 17.00 0.85 40.49 | -0.15 0.98 |-157.87 | -18.49 | 0.119 |-134.06 | 0.50 -32.96 5.87 18.00 0.86 56.20 | -1.25 0.87 |-173.65 | -18.86 | 0.114 |-144.46 | 0.56 44.64 5.41 ATF-35143 Typical Noise Parameters Vos = 3 V, Ips = 15 mA Freq. Frain T opt Riso Ga GHz dB Mag. Ang. - dB 0.5 0.11 0.86 3.5 0.17 21.2 3 0.9 0.15 0.81 12.1 0.16 19.9 a 1.0 0.16 0.80 14.3 0.16 19.6 z 1.5 0.21 0.73 25.1 0.15 18.2 9 1.8 0.24 0.69 31.6 0.14 17.6 = 2.0 0.26 0.66 35.9 0.20 17.2 g 2.5 0.31 0.60 47.2 0.17 16.3 3.0 0.37 0.55 59.4 0.15 15.6 ; 4.0 0.47 0.46 86.0 0.11 14.2 0 5 10 1520 5.0 0.58 0.40 115.4 0.07 12.9 FREQUENCY (GHz) 6.0 0.68 0.36 146.8 0.05 11.8 Figure 23. MSG/MAG and IS1?? vs. 7.0 0.79 0.33 179.8 0.05 10.8 Frequency at 3 V, 15 mA. 8.0 0.89 0.32 -146.1 0.07 10.0 9.0 1.00 0.32 -111.5 0.13 9.3 10.0 1.10 0.33 -76.8 0.22 8.8 Notes: 1. Fyin Values at 2 GHz and higher are based on measurements while the F,,;,, below 2 GHz have been extrapolated. The F,,;, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NPS test system. From these measure- ments a true F,,;, is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.12 ATF-35143 Typical Scattering Parameters, Vp; = 3 V, Ips = 30 mA Freq. Si So Si2 So MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. Ang. dB 0.50 0.99 21.01} 18.45 8.36 | 163.08 | -33.98 | 0.020 | 76.89 | 0.53 -15.23 26.21 0.75 0.96 -32.39 | 18.29 8.21 | 153.62 | -30.46 | 0.030 | 69.94 | 0.51 -21.01 24.36 1.00 0.93 42.42) 18.03 7.97 | 145.49 | -28.40 | 0.038 | 64.80 | 0.50 -27.72 23.22 1.50 0.88 61.18 | 17.42 7A3 | 130.11 | -25.35 | 0.054 | 54.32 | 0.47 40.61 21.39 1.75 0.85 -70.01 | 17.09 715 | 122.91 | -24.44 | 0.060 | 49.77 | 0.45 46.56 20.72 2.00 0.82 -78.57 | 16.74 6.87 | 116.00 | -23.61 | 0.066 | 45.15 | 0.43 -52.43 20.17 2.50 0.76 95.09 | 16.03 6.33 | 102.87 | -22.38 | 0.076 | 36.87 | 0.40 -63.37 19.21 3.00 0.70 | -111.30} 15.32 5.83 90.60 | -21.41 | 0.085 | 29.08 | 0.37 -73.44 18.36 4.00 0.61 | -143.48 | 13.93 4.97 68.04 | -20.26 | 0.097 14.96 | 0.31 91.21 17.10 5.00 0.56 | -174.00} 12.65 4.29 47,37 | -19.58 | 0.105 2.38 | 0.25 | -108.94 16.11 6.00 0.54 | 157.98] 11.50 3.76 28.09 | -19.02 | 0.112 | -10.00 | 0.19 | -128.04 15.26 7.00 0.54 | 130.06} 10.42 3.32 9.32 | -18.64 | 0.117 | -22.21 | 0.14 | -151.53 13.78 8.00 0.55 105.20] 9.42 2.96 -8.66 | -18.34 | 0.121 | -32.79 | 0.11 179.40 12.10 9.00 0.59 82.53] 8.39 2.63 -26.26 | -18.06 | 0.125 | -44.11 | 0.09 | 138.30 11.00 10.00 0.63 63.18 | 7.49 2.37 | -43.25 | -17.79 | 0.129 | -54.57 | 0.09 95.15 10.36 11.00 0.67 44.96] 6.56 2.13 -60.82 | -17.52 | 0.133 | -66.16 | 0.14 62.17 9.76 12.00 0.71 26.64 | 5.58 1.90 | -78.23 | -17.46 | 0.134 | -78.18 | 0.20 39.86 9.05 13.00 0.74 794) 446 1.67 | -95.07 | -17.65 | 0.131 | -89.74 | 0.27 23.41 8.14 14.00 0.77 5.53] 3.36 1.47 |-110.42 | -17.86 | 0.128 | -99.72 | 0.34 5.08 740 15.00 0.82 -16.02} 2.33 1.31 |-125.79 | -17.99 | 0.126 | -109.60 | 0.39 -11.42 7A1 16.00 0.82 28.09} 1.25 1.16 |-141.72 | -18.06 | 0.125 | -120.39 | 0.46 -25.74 6.44 17.00 0.85 40.02} 0.23 1.03 |-156.00 | -18.06 | 0.125 | -131.03 | 0.51 -35.29 6.19 18.00 0.87 55.63 | -0.85 0.91 |-171.48 | -18.49 | 0.119 |-141.69 | 0.57 46.81 5.71 ATF-35143 Typical Noise Parameters Vos = 3 V, Ips = 30 mA Fre q- Frain T opt Riso G, 30 GHz dB Mag. Ang. - dB 25 0.5 0.11 0.87 3.5 0.18 21.6 3 oo 0.9 0.16 0.81 12.5 0.17 20.5 & 1.0 0.17 0.79 14.7 0.17 20.2 z* 1.5 0.23 0.72 25.9 0.16 18.9 2 40 1.8 0.27 0.68 32.6 0.15 18.3 = 2.0 0.28 0.65 37.1 0.15 17.9 g 2.5 0.35 0.59 49.3 0.14 17.0 0 3.0 0.41 0.53 62.5 0.12 16.3 5 4.0 0.53 0.43 91.6 0.09 14.9 0 5 10 1520 5.0 0.66 0.37 123.4 0.07 13.6 FREQUENCY (GHz) 6.0 0.79 0.33 157.1 0.05 12.4 Figure 24. MSG/MAG and IS,,/ vs. 7.0 0.91 0.31 -168.3 0.06 11.4 Frequency at 3 V, 30 mA. 8.0 1.04 0.31 -133.7 0.10 10.6 9.0 1.17 0.33 -100.0 0.17 9.9 10.0 1.29 0.38 68.1 0.28 9.3 Notes: 1. Fin values at 2 GHz and higher are based on measurements while the Fin, below 2 GHz have been extrapolated. The Fy, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NPS test system. From these measure- ments a true F,,;, is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.13 ATF-35143 Typical Scattering Parameters, Vp; = 4 V, Ips = 30 mA Freq. Si So Si2 So MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. Ang. dB 0.50 0.99 21.11} 18.54 8.45 | 163.20 | -33.98 | 0.020 | 77.63 | 0.56 -14.66 26.26 0.75 0.96 -32.57 | 18.38 8.30 | 153.72 | -30.75 | 0.029 | 70.15 | 0.54 -20.35 24.55 1.00 0.94 42.70} 18.13 8.07 | 145.56 | -28.64 | 0.037 | 64.68 | 0.53 -26.91 23.38 1.50 0.88 61.55 | 17.53 7.53 | 130.19 | -25.68 | 0.052 | 53.94 | 0.50 -39.45 21.61 1.75 0.85 -70.46 | 17.20 7.24 | 123.00] -24.58 | 0.059 | 49.29 | 0.48 45.29 20.90 2.00 0.82 -79.07 | 16.84 6.95 | 116.04] -23.88 | 0.064 | 44.64 | 0.46 -50.94 20.36 2.50 0.76 95.78 | 16.14 6.41 | 102.91 | -22.62 | 0.074 | 36.30] 0.43 -61.54 19.38 3.00 0.71 | -112.14} 15.43 5.91 90.63 | -21.72 | 0.082 | 28.32 | 0.40 71.17 18.58 4.00 0.62 | -144.46] 14.04 5.03 68.03 | -20.72 | 0.092 13.98 | 0.34 -87.95 17.38 5.00 0.57 | -174.93 | 12.76 4.34 47,35 | -20.00 | 0.100 1.12 | 0.28 | -104.23 16.38 6.00 0.55 157.13 | 11.61 3.81 28.07 | -19.49 | 0.106 | -11.07 | 0.22 | -120.69 15.55 7.00 0.55 129.56 | 10.54 3.37 9.35 | -19.25 | 0.109 | -23.07 | 0.17 | -139.29 14.19 8.00 0.57 | 104.96] 9.55 3.00 -8.62 | -18.94 | 0.113 | -33.33 | 0.13 | -160.54 12.47 9.00 0.60 82.47} 8.53 2.67 | -26.19 | -18.79 | 0.115 | 44.34] 0.09 | 169.67 11.33 10.00 0.64 63.23 | 7.64 2.41 43.13 | -18.49 | 0.119 | -54.44 | 0.07 | 128.74 10.70 11.00 0.68 45.01] 6.74 2.17 | -60.63 | -18.27 | 0.122 | -65.68 | 0.09 78.47 10.10 12.00 0.72 26.69 | 5.79 1.95 -78.09 | -18.13 | 0.124 | -77.35 | 0.15 47.96 9.40 13.00 0.74 8.00] 4.71 1.72 | -95.00 | -18.27 | 0.122 | -88.59 | 0.22 28.53 8.47 14.00 0.77 5.46] 3.64 1.52 |-110.50 | -18.42 | 0.120 | -98.13 | 0.28 8.38 7.69 15.00 0.82 -16.18} 2.65 1.36 | -126.04 | -18.49 | 0.119 | -108.03 | 0.34 -8.46 7.76 16.00 0.82 28.39] 1.62 1.21 |-142.14 | -18.49 | 0.119 |-118.41 | 0.40 -22.93 6.75 17.00 0.85 40.51} 0.64 1.08 |-156.61 | -18.49 | 0.119 |-129.54 | 0.46 -32.29 6.53 18.00 0.86 56.36} -0.44 0.95 | -172.55 | -18.86 | 0.114 |-140.19 | 0.52 43.97 6.00 ATF-35143 Typical Noise Parameters Vos =4V, Ips = 30 mA Fre q- Frain T opt Riso Ga 30 GHz dB Mag. Ang. - dB 25 0.5 0.10 0.90 3.5 0.22 20.7 Z 99 0.9 0.14 0.85 12.5 0.21 19.7 a 1.0 0.16 0.83 14.7 0.20 19.5 z* 1.5 0.21 0.77 25.9 0.18 18.4 2 40 1.8 0.25 0.73 32.6 0.17 17.8 = 2.0 0.28 0.70 37.1 0.17 17.5 g 2.5 0.33 0.64 49.1 0.15 16.7 0 3.0 0.38 0.58 62.0 0.14 16.0 5 4.0 0.49 0.48 90.3 0.10 14.7 0 5 10 15.20 5.0 0.62 0.40 121.2 0.07 13.5 FREQUENCY (GHz) 6.0 0.74 0.35 154.0 0.05 12.5 Figure 25. MSG/MAG and IS2;? vs. 7.0 0.87 0.32 172.2 0.06 11.5 Frequency at 4 V, 30 mA. 8.0 0.99 0.31 -138.0 0.09 10.7 9.0 1.11 0.34 -104.2 0.15 10.0 10.0 1.24 0.39 -71.6 0.26 9.5 Notes: 1. Fin values at 2 GHz and higher are based on measurements while the Fin, below 2 GHz have been extrapolated. The Fy, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NPS test system. From these measure- ments a true F,,;, is calculated. Refer to the noise parameter application section for more information. 2. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.14 ATF-35143 Typical Scattering Parameters, Vp; = 4 V, Ips = 60 mA Freq. Si So Si2 So MSG/MAG GHz | Mag. Ang. dB Mag. Ang. dB Mag. Ang. | Mag. Ang. dB 0.50 0.99 -21.27} 18.15 8.09 | 163.09 | -34.89 | 0.018 | 77.28 | 0.54 -13.50 26.52 0.75 0.96 -32.77 | 17.99 7.94 | 153.59 | -31.70 | 0.026 | 70.40 | 0.53 -18.54 24.83 1.00 0.94 42.95 | 17.74 7.71 | 145.40 | -29.37 | 0.034 | 65.05 | 0.51 -24.50 23.55 1.50 0.88 61.92} 17.13 7.19 | 129.98 | -26.56 | 0.047 | 55.14 | 0.48 -35.90 21.84 1.75 0.85 -70.88 | 16.79 6.91 | 122.76] -25.51 | 0.053 | 50.40 | 0.47 41.17 21.15 2.00 0.82 -79.55 | 16.45 6.64 | 115.80 | -24.73 | 0.058 | 46.34 | 0.45 -46.33 20.59 2.50 0.76 96.36] 15.74 6.12 | 102.60 | -23.48 | 0.067 | 38.10 | 0.42 -55.86 19.61 3.00 0.70 | -112.86] 15.03 5.64 90.26 | -22.62 | 0.074 | 30.61 | 0.39 -64.53 18.82 4.00 0.61 | -145.47| 13.64 4.81 67.52 | -21.51 | 0.084 17.18 | 0.34 -79.32 17.58 5.00 0.57 | -176.15 | 12.35 4.15 46.76 | -20.82 | 0.091 5.47 | 0.29 -93.48 16.59 6.00 0.55 155.85 | 11.21 3.64 27.45 | -20.26 | 0.097 5.83 | 0.24 | -107.07 15.74 7.00 0.55 128.25 | 10.14 3.21 8.68 | -19.83 | 0.102 | -17.10 | 0.19 | -121.43 13.17 8.00 0.57 | 103.61} 9.16 2.87 -9.34 | -19.41 | 0.107 | -26.34 | O15 | -137.04 11.94 9.00 0.60 81.11} 8.14 2.55 -27.02 | -19.09 | 0.111 | -36.93 | 0.11 | -156.16 10.99 10.00 0.64 62.01} 7.25 2.30 | -44.01 | -18.71 | 0.116 | 46.43 | 0.07 | 178.65 10.38 11.00 0.69 43.90 | 6.37 2.08 | -61.57 | -18.27 | 0.122 | -57.09 | 0.06 | 113.63 9.88 12.00 0.72 25.78 | 5.43 1.87 | -79.17 | -17.92 | 0.127 | -68.92 | 0.10 60.75 9.26 13.00 0.75 7.31) 4.37 1.65 -96.36 | -17.92 | 0.127 | -80.43 | 0.18 35.69 8.35 14.00 0.78 6.12] 3.30 1.46 |-112.19 | -17.92 | 0.127 | -90.26 | 0.25 13.24 7.57 15.00 0.83 -16.62} 2.29 1.30 | -127.94 | -17.86 | 0.128 | -100.79 | 0.31 4.12 7.78 16.00 0.84 28.78 | 1.25 1.16 |-144.27 | -17.79 | 0.129 |-112.14 | 0.39 -19.12 6.73 17.00 0.87 40.91} 0.21 1.03 |-159.19 | -17.79 | 0.129 |-123.71 | 0.46 -28.89 6.65 18.00 0.88 56.66 | -0.92 0.90 | -175.28 | -17.99 | 0.126 | -134.88 | 0.52 40.92 6.06 ATF-35143 Typical Noise Parameters Vos =4V, Ips = 60 mA Fre q- Frain T opt Riso Ga 30 GHz dB Mag. Ang. - dB 25 0.5 0.22 0.84 4A 0.29 22.5 S oo 0.9 0.30 0.78 15.6 0.29 21.3 a 1.0 0.32 0.77 18.4 0.28 21.0 z* 1.5 0.42 0.70 32.4 0.26 19.8 2 40 1.8 0.48 0.65 40.8 0.25 19.2 = 2.0 0.52 0.63 46.4 0.24 18.8 g 2.5 0.63 0.56 61.0 0.21 17.8 0 3.0 0.73 0.51 16.6 0.19 17.0 5 4.0 0.94 0.44 109.9 0.13 15.5 0 5 10 15.20 5.0 1.15 0.40 144.8 0.09 14.1 FREQUENCY (GHz) 6.0 1.35 0.39 -179.8 0.08 12.9 Figure 26. MSG/MAG and |S>;/? vs. 7.0 1.56 0.40 -145.5 0.13 11.9 Frequency at 4 V, 60 mA. 8.0 L.77 0.43 -113.7 0.26 11.0 9.0 1.98 0.47 85.6 0.48 10.3 10.0 2.18 0.53 -62.6 0.79 9.8 Notes: 1. Fyin Values at 2 GHz and higher are based on measurements while the F,,;,, below 2 GHz have been extrapolated. The F,,;, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NPS test system. From these measure- ments a true F,,;, is calculated. Refer to the noise parameter application section for more information. 3. Sand noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.Noise Parameter Applications Information Finin Values at 2 GHz and higher are based on measurements while the F,,in; below 2 GHz have been extrapolated. The F,,;, values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fyn iS calculated. F,,;, represents the true minimum noise figure of the device when the device is pre- sented with an impedance matching network that trans- forms the source impedance, typically 50Q, to an impedance represented by the reflection coefficient [,. The designer must design a matching network that will present I, to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Finin Only when the device is presented with I. If the reflec- tion coefficient of the matching network is other than Ty, then the noise figure of the device will be greater than Fy, based on the following equation. NE = Finin +4. Rn IT, -T, 1? Zo (W1+T,I2)(1-T,14) Where R,,/Z, is the normalized noise resistance, T, is the opti- mum reflection coefficient required to produce F,,;, and I, is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. T, is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower I, as compared to narrower gate width devices. 15 Typically for FETs, the higher TI, usually infers that an impedance much higher than 50Q is required for the device to produce Fyin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high imped- ance requires very hi-Q compo- nents in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q> 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Finin Of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on ampli- fier noise figure is covered in Hewlett-Packard Application 1085.ATF-35143 SC-70 4 Lead, High Frequency Model Optimized for 0.16.0 GHz 16 EQUATION La=0.1 nH R EQUATION Lb=0.1 nH MWA EQUATION Lc=0.8 nH R=0.1 OH EQUATION Ld=0.6 nH EQUATION Rb=0.1 OH e LOSSYL EQUATION Ca=0.15 pF L=Lb EQUATION Cb=0.15 pF R=Rb L LOSSYL LOSSYL L GATE_IN> Sryyy qernn__92_YY1_ 5 SOURCE 7 L=Le L=Lb L=Lb L=La.5 R=Rb D R=Rb C=Cb C Cc C=Ca G Ss LOSSYL LOSSYL L L=La L=Lb L=Lb L=Ld R=Rb R=Rb This model can be used as a the measured data in this data design tool. It has been tested on sheet. For future improvements MDS for various specifications. Hewlett Packard reserves the However, for more precise and right to change these models accurate design, please refer to without prior notice. ATF-35143 Die Model * STATZ MESFET MODEL * MODEL = FET IDS model Gate model Parasitics Breakdown Noise NFET=yes DELTA=.2 RG=1 GSFWD=1 FNC=01e+6 PFET= GSCAP=3 RD=Rd GSREV=0 R=.17 IDSMOD=3 CGS=cgs pF RS=Rs GDFWD=1 P=.65 VTO=0.95 GDCAP=3 LG=Lg nH GDREV=0 C=.2 BETA= Beta GCD=Cgd pF LD=Ld nH VJR=1 LAMBDA=0.09 LS=Ls nH IS=1 nA ALPHA=4.0 CDS=Cds pF IR=1 nA B=0.8 CRF=.1 IMAX=.1 TNOM=27 RC=Re XTl= IDSTC= N= VBI=.7 EG= Model scal factors (W=FET width in microns) Mode scal factors U(VSrE | widtn in microns) D EQUATION Cds=0.01*W/200 EQUATION Beta=0.06+W/200 EQUATION Rd=200W NFETMESFET EQUATION Rs=.5*200/W EQUATION Cgs=0.2*W/200 G =| MODEL=FET EQUATION Cgd=0.04*W/200 EQUATION Lg=0.03+200/W EQUATION Ld=0.03+200/W s s EQUATION Ls=0.01+*200/W EQUATION Rce=500+200/W W=400 pm17 Part Number Ordering Information No. of Part Number Devices Container ATF-35143-TR1 3000 7" Reel ATF-35143-TR2 10000 13" Reel ATF-35143-BLK 100 antistatic bag Package Dimensions Outline 43 (SOT-343/SC-70 4 lead) aa 2.00 + 0.05 1.30 + 0.02 EFYy | |-<_| 9.60 TYP [e415 >| - 2.00 + 0.05 0.90 0.05 1 | =F 0.01 | z >| 0.30 TYP DIMENSIONS ARE IN MILLIMETERS (INCHES) 1.30 (.051) REF o 2.60 (.102 + 1301057 (-102) + + 0.55 (.021) TYP 0.85 (.033) 1.15 (.045) REF _1.25 + 0.02 | | 0.29 + 0.050 0.6 0.375 TYP 0.13 TYPDevice Orientation REEL USER FEED DIRECTION TAPE COVER TAPE Tape Dimensions For Outline 4T Pp Po 18 TOP VIEW END VIEW 4 mm I Oo Oo O 8mm CLO] foo] fe] po | [ sPX} | 5Px]} || 5Px]} | 5Px | jor LT |} {or TT |} D Po O \ O O O 4A S | Oo} | Dy ty (CARRIER TAPE THICKNESS) 1 | -*T~8 MAX. _ _ DESCRIPTION SYMBOL | SIZE(mm)_| SIZE (INCHES) CAVITY LENGTH Ag 2.2440.10 | 0.088 + 0.004 WIDTH Bo 2.3440.10 | 0.092 + 0.004 DEPTH Kg 1.224010 | 0.048+ 0.004 PITCH P 4.00+0.10 | 0.1574 0.004 BOTTOM HOLE DIAMETER Dy 1,00+0.25 | 0.039 +0.010 PERFORATION | DIAMETER D 1.5540.05 | 0.061 + 0.002 PITCH Po 4.00+0.10 | 0.1574 0.004 POSITION E 1.75+0.10 | 0.069 + 0.004 CARRIER TAPE | WIDTH w 8.004030 | 0.315+0.012 THICKNESS ty 0.255 + 0.013 | 0.010 + 0.0005 COVER TAPE | WIDTH c 5440.10 0.205 + 0.004 TAPE THICKNESS Tt 0.062 + 0.001 | 0.0025 + 0.00004 DISTANCE CAVITY TO PERFORATION F 3.504005 | 0.138 + 0.002 (WIDTH DIRECTION) CAVITY TO PERFORATION Py 2.00+0.05 | 0.079 + 0.002 (LENGTH DIRECTION) Ty (COVER TAPE THICKNESS) 5 MAX.i HEWLETT PACKARD www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright 1999 Hewlett-Packard Co. 5968-5430E (7/99)