PD -91884 IRFP450A SMPS MOSFET HEXFET(R) Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001) VDSS Rds(on) max ID 500V 0.40 14A l TO-247AC G DS Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw 14 8.7 56 190 1.5 30 4.1 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies: l l l Two Transistor Forward Half Bridge, Full Bridge PFC Boost Notes through www.irf.com are on page 8 1 6/23/99 IRFP450A Static @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 500 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- V(BR)DSS Typ. --- 0.58 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.40 VGS = 10V, ID = 8.4A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 7.8 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 15 36 35 29 2038 307 10 2859 81 96 Max. Units Conditions --- S VDS = 50V, ID = 8.4A 64 ID = 14A 16 nC VDS = 400V 26 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 14A ns --- RG = 6.2 --- RD = 17,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 760 14 19 mJ A mJ Typ. Max. Units --- 0.24 0.65 --- 40 C/W Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS I SM VSD trr Q rr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 56 S p-n junction diode. --- --- 1.4 V TJ = 25C, IS = 14A, VGS = 0V --- 487 731 ns TJ = 25C, IF = 14A --- 3.9 5.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFP450A 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 4.5V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 4.5V 1 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 150 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 14A ID = 13A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP450A V GS = C is s = C rs s = C oss = C , Capacitance (pF) 10000 20 0V, f = 1MHz Cg s + C g d , Cd s SHORTE D C gd C ds + C gd VGS , Gate-to-Source Voltage (V) 100000 C iss 1000 C oss 100 10 C rss 1 16 10 100 VDS = 400V VDS = 250V VDS = 100V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 ID = 14A 13A 0 1000 15 30 45 60 75 QG , Total Gate Charge (nC) V D S , D ra in-to-S ource V oltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us I D , Drain Current (A) TJ = 150 C 10 TJ = 25 C 1 0.1 0.2 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1ms V GS = 0 V 0.4 1.4 100us 10 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP450A 14 RD VDS I D , Drain Current (A) 12 VGS D.U.T. RG 10 + -VDD 8 10V Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 VDS 2 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP450A D R IV E R L VDS EAS , Single Pulse Avalanche Energy (mJ) 1600 1 5V TOP BOTTOM ID 6.3A 8.9A 14A 1200 D .U .T RG + V - DD IA S 20V 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A 800 400 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V 640 QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. V D S a v , A valanc he V oltage (V ) QGS 620 600 580 560 + V - DS 540 2 4 6 8 10 12 14 I a v , A v alanc he C urrent (A ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 A 0 VGS Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRFP450A Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP450A Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) -D - 3.6 5 (.14 3) 3.5 5 (.14 0) 1 5.9 0 (.6 26 ) 1 5.3 0 (.6 02 ) -B - 0.2 5 (.0 10 ) M 5 .30 (.20 9) 4 .70 (.18 5) 2 .50 (.0 89 ) 1 .50 (.0 59 ) 4 D B M -A 5 .50 (.21 7) 2 0 .30 (.80 0) 1 9 .70 (.77 5) 2X 1 2 NO TE S: 5.50 (.2 1 7) 4.50 (.1 7 7) 1 DIM EN SION ING & TO LER AN CING P ER A N SI Y14.5M , 1982. 2 CON TR OLLIN G D IM EN SIO N : IN CH . 3 CON F OR M S TO JED E C OU TLIN E TO-247-A C . 3 -C - 14.8 0 (.5 83 ) 14.2 0 (.5 59 ) 2 .40 (.0 94 ) 2 .00 (.0 79 ) 2X 5.45 (.2 1 5) 2X 4 .30 (.1 70 ) 3 .70 (.1 45 ) LE AD A S SIG N ME NTS 0 .8 0 (.0 31 ) 3X 0 .4 0 (.0 16 ) 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0.2 5 (.01 0) M 3 .40 (.1 33 ) 3 .00 (.1 18 ) 1 2 3 4 2.60 (.10 2) 2.20 (.08 7) C A S - G ATE DR A IN SO UR C E DR A IN Part Marking Information TO-247AC E X A MP LE : T H IS IS A N IR F P E 30 W ITH A S S E MB L Y LO T C O D E 3 A 1 Q A IN TE R N A TIO N A L R E C T IF IE R LOG O P A R T N U MB E R IR FP E 30 3 A 1 Q 9 3 02 A S S E MB L Y LOT CO DE D A TE C O D E (Y YW W ) YY = Y E A R W W W EEK Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L =7.8mH RG = 25, IAS = 14A. (See Figure 12) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 14A, di/dt 130A/s, VDD V(BR)DSS, TJ 150C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99 8 www.irf.com