2N6383 - 2N6385 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/523 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 10 amps and is military qualified up to the JANTXV level. This TO-204AA isolated package features a 180 degree lead orientation. Important: For the latest information, visit our website http://www.microsemi.com. TO-204AA (TO-3) Package FEATURES * JEDEC registered 2N6383 through 2N6385 * JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/523. (See part nomenclature for all available options.) * RoHS compliant versions are available (commercial grade only) APPLICATIONS / BENEFITS * * * Military and other high reliability applications High frequency response TO-204AA case with isolated terminals MAXIMUM RATINGS @ T A = +25 oC unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Case Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 o (1) @ TA = +25 C o (2) @ TC = +25 C Base Current Collector Current Symbol Value TJ and TSTG R JC V CEO -55 to +175 1.75 40 60 80 40 60 80 5 6.0 100 0.25 10 V CBO V EBO PT IB IC Notes: 1. Derate linearly 34.2 mW/oC above T A > +25 oC. 2. Derate linearly 571 mW/oC above T C > +25 oC. T4-LDS-0316, Rev. 1 (9/13/13) (c)2013 Microsemi Corporation Unit o C C/W V o V V W A A MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 2N6383 - 2N6385 MECHANICAL and PACKAGING * * * * * * CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750 method 2026. POLARITY: NPN (see schematic) MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws WEIGHT: Approximately 15 grams See package dimensions on last page. PART NOMENCLATURE JAN 2N6283 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol IB IC IE TC V CB V CBO V CC V CEO V CE V EB V EBO SYMBOLS & DEFINITIONS Definition Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Emitter current: The value of the dc current into the emitter terminal. Case temperature: The temperature measured at a specified location on the case of a device. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Collector-emitter voltage: The dc voltage between the collector and the emitter. Emitter-base voltage: The dc voltage between the emitter and the base. Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0316, Rev. 1 (9/13/13) (c)2013 Microsemi Corporation Page 2 of 7 2N6383 - 2N6385 ELECTRICAL CHARACTERISTICS @ T A = +25 oC unless otherwise noted Characteristics Symbol Min. 2N6383 2N6384 2N6385 V (BR)CEO 40 60 80 V 2N6383 2N6384 2N6385 V (BR)CER 40 60 80 V Collector-Emitter Cutoff Current V CE = 40 V V CE = 60 V V CE = 80 V 2N6383 2N6384 2N6385 I CEO 1.0 mA Collector-Emitter Cutoff Current V CE = 40 V, V BE = 1.5 V V CE = 60 V, V BE = 1.5 V V CE = 80 V, V BE = 1.5 V 2N6383 2N6384 2N6385 I CEX 100 A I EBO 5.0 mA I CBO 1.0 mA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 200 mA Collector-Emitter Breakdown Voltage I C = 200 mA, R BB = 100 Emitter-Base Cutoff Current V EB = 5.0 V Collector-Emitter Cutoff Current V CE = 40 V V CE = 60 V V CE = 80 V 2N6383 2N6384 2N6385 ON CHARACTERISTICS Forward-Current Transfer Ratio I C = 5.0 A, V CE = 3.0 V I C = 10 A, V CE = 3.0 V I C = 5.0 A, V CE = 3.0 V, T A = -55 C Collector-Emitter Saturation Voltage I C = 5.0 A, I B = 10 mA I C = 10 A, I B = 0.1 A Base-Emitter Voltage Non-saturated V CE = 3.0 V, I C = 5.0 A V CE = 3.0 V, I C = 10 A h FE 2.8 4.5 V BE(on) (c)2013 Microsemi Corporation |hfe| Cobo 20 Unit 20,000 2.0 3.0 V CE(sat) DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 1.0 A, V CE = 5.0 V, f = 1.0 MHz Output Capacitance V CB = 10 V, I E = 0, f = 100 kHz f 1 MHz T4-LDS-0316, Rev. 1 (9/13/13) 1,000 100 200 Max. V V 300 200 pF Page 3 of 7 2N6383 - 2N6385 ELECTRICAL CHARACTERISTICS @ T C = 25 oC unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Turn-On Time V CC = 30 V, I C = 5.0 A; I B = 20 mA Turn-Off Time V CC = 30 V, I C = 5.0 A; I B1 = -I B2 = 20 mA t on 2.5 s t off 10 s SAFE OPERATING AREA (See Figures 1 and 2 and MIL-STD-750,Test Method 3053) DC Tests T C = +25 C, t = 1 second, 1 Cycle Test 1 V CE = 10 V, I C = 10 A Test 2 V CE = 30 V, I C = 3.33 A Test 3 V CE = 40 V, I C = 1.5 A (2N6383) V CE = 60 V, I C = 0.4 A (2N6384) V CE = 80 V, I C = 0.16 A (2N6385) T4-LDS-0316, Rev. 1 (9/13/13) (c)2013 Microsemi Corporation Page 4 of 7 2N6383 - 2N6385 IC = Collector Current (Amperes) SAFE OPERATING AREA V CE - Collector to Emitter Voltage (Volts) IC = Collector Current (Amperes) FIGURE 1 Maximum Safe Operating Graph (continuous dc) L - Inductance (Millihenries) FIGURE 2 Safe Operating Area for Switching Between Saturation and Cutoff (unclamped inductive load) T4-LDS-0316, Rev. 1 (9/13/13) (c)2013 Microsemi Corporation Page 5 of 7 2N6383 - 2N6385 PACKAGE DIMENSIONS Ltr CD CH HR HR1 HT LD LL LL1 MHD MHS PS PS1 S1 Dimensions Inches Millimeters Min Max Min Max 0.875 22.23 0.250 0.450 6.35 11.43 0.495 0.525 12.57 13.34 0.131 0.188 3.33 4.78 0.060 0.135 1.52 3.43 0.038 0.043 0.97 1.09 0.312 0.500 7.92 12.70 0.050 1.27 0.151 0.161 3.84 4.09 1.177 1.197 29.90 30.40 0.420 0.440 10.67 11.18 0.205 0.225 5.21 5.72 0.655 0.675 16.64 17.15 Notes 3 4 5, 6 5 5, 6 7 8, 9 5, 8, 9 8 NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Terminal 1 is the base and terminal 2 is the emitter. The collector shall be electrically connected to the case. 3. Body contour is optional within zone defined by dimension CD. 4. Applies to both ends. 5. Applies to both terminals. 6. Dimension LD applies between L1 and LL. Lead diameter shall not exceed twice dimension LD within dimension L1. Diameter is uncontrolled in dimension L1. 7. Two holes. 8. These dimensions shall be measured at points 0.050 inch (1.27 mm) to 0.055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement shall be made at seating plane. 9. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall. 10. Mounting holes shall be deburred on the seating plane side. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. See schematic on next page T4-LDS-0316, Rev. 1 (9/13/13) (c)2013 Microsemi Corporation Page 6 of 7 2N6383 - 2N6385 SCHEMATIC T4-LDS-0316, Rev. 1 (9/13/13) (c)2013 Microsemi Corporation Page 7 of 7