CAS300M12BM2 1.2kV, 5.0 m All-Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Module Features VDS = 1.2 kV Esw,Total@300A = 12.0 mJ RDS(on) = 5.0 m Package 62 mm x 106 mm x 30 mm Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation Ease of paralleling Copper baseplate and aluminum nitride insulator System Benefits Enables compact and lightweight systems High efficiency operation Mitigates over-voltage protection Reduces thermal requirements Enables simplified topologies Applications Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction Part Number Package Marking CAS300M12BM2 Half Bridge Module CAS300M12BM2 Maximum Ratings (TC = 25C unless otherwise specified) Symbol VDSmax VGSmax VGSop Parameter Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage Value 1.2 -10/+25 -5/+20 404 285 Unit kV V V A A ID Continuous Drain Current IDpulse Pulsed Drain Current 1500 A TJmax TC Tstg Ptot Visol Lstray M G Junction Temperature Case and Storage Temperature Range Maximum Power Dissipation Case Isolation Voltage Stray Inductance Mounting Torque Weight Clearance Distance 150 -40 to +125 1660 4.0 14 5 300 12 30 40 C Creepage Distance Test Conditions Absolute maximum values Recommended operational values VGS = 20 V, TC = 25 C VGS = 20 V, TC = 90 C Pulse width tP = 200 s repetition rate limited by TJ(max), TC = 25C Note Fig 20 C W kV nH Nm g mm mm mm TC = 25 C, TJ = 150 C AC, 50 Hz, 1 min Measured between terminals 2 and 3 To heatsink and terminals Terminal to terminal Terminal to terminal Terminal to baseplate 1 Electrical Characteristics (TC = 25C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain - Source Breakdown Voltage Gate Threshold Voltage Min Value Typ Max 1.2 2.0 2.3 500 IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Drain-Source On-State Resistance gfs Transconductance CISS COSS CRSS td(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time tr Rise Time 68 td(off) Turn-Off Delay Time 168 tf Fall Time 43 EON Turn-On Switching Energy 6.05 EOFF Turn-Off Switching Energy 5.95 Unit kV VGS = 0 V, IDS = 1 mA V VDS = 10 V, IDS = 15 mA 2000 A 1000 1 5.0 100 5.7 8.6 9.8 nA m 94.8 S 93.3 11.7 2.55 0.07 76 Test Conditions nF mJ VDS = 1.2 kV, VGS = 0 V VDS = 1.2 kV, VGS = 0 V TJ = 150 C VGS = 20 V, VDS = 0 V VGS = 20 V, IDS = 300 A VGS = 20 V, IDS = 300 A, TJ = 150 C VDS = 20 V, IDS = 300 A VDS = 20 V, IDS = 300 A, TJ = 150 C VDS = 600 V f = 200 kHz, VAC = 25 mV VDD = 600 V, VGS = -5/20 V ID = 300 A, RG(ext) = 2.5 , Timing relative to VDS Per IEC60747-8-4 pg 83 Inductive Load VDS = 600 V, VGS = -5 / 20 V IDS = 300 A, RG = 2.5 , Inductive Load Notes Fig 11 Fig 4, 5 and 6 Fig 7 Fig 17, 18 Fig 24 Fig 25 Free-Wheeling Diode Characteristics Symbol VSD Parameter Min Diode Forward Voltage QC Total Capacitive Charge Note: The reverse recovery is purely capacitive. Value Typ 1.7 2.2 3.2 Max 2.0 2.5 Unit V V C Test Conditions Notes ISD = 300 A, TJ = 25C, VGS = 0 V ISD = 300 A, TJ = 150C, VGS = 0 V Fig 8, 9 and 10 Test Conditions Notes Gate Charge Characteristics Symbol QGS QGD QG RG Parameter Min Gate to Source Charge Gate to Drain Charge Total Gate Charge Internal Gate Resistance Value Typ 166 475 1025 3.0 Max Unit nC VDS = 800 V, VGS = -5 /+ 20 V IDS = 300 Amps Per JEDEC24 pg 27 f = 200 kHz, VAC = 25 mV Fig 12 Thermal Characteristics Symbol RJCM RJCD Parameter Thermal Resistance Junction to Case for MOSFET Thermal Resistance Junction to Case for Diode Min Value Typ 0.070 Max Unit 0.075 C/W 0.073 0.076 Test Conditions TC = 90 C, Tj =150 C Pdis = Pmax Notes Fig 17 Fig 18 2 Typical Performance 600 600 VGS = 20 V VGS = 20 V 500 VGS = 18 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 500 VGS = 14 V 400 VGS = 16 V VGS = 12 V 300 VGS = 10 V 200 100 VGS = 18 V VGS = 14 V VGS = 12 V VGS = 16 V 400 VGS = 10 V 300 200 100 Conditions: TJ = -40C tp = 200 s Conditions: TJ = 25C tp = 200 s 0 0 0 1 2 3 4 5 6 7 0 8 1 2 3 Fig 1. Typical Output Characteristics TJ = -40 C 5 6 7 2.0 VGS = 20 V 1.6 On Resistance, RDS On (p.u.) VGS = 16 V VGS = 14 V 400 Conditions: IDS = 300 A VGS = 20 V tp = 200 s 1.8 VGS = 12 V VGS = 18 V 500 VGS = 10 V 300 200 1.4 1.2 1.0 0.8 0.6 0.4 100 Conditions: TJ = 150C tp = 200 s 0.2 0 0.0 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (C) Drain-Source Voltage VDS (V) Fig 3. Typical Output Characteristics TJ = 150 C Fig 4. Normalized On-Resistance vs. Temperature 20 12 Conditions: IDS = 300 A tp = 200 s 18 On-Resistance, RDS ON (m) 10 On Resistance, RDS On (m) 8 Fig 2. Typical Output Characteristics TJ = 25 C 600 Drain-Source Current, IDS (A) 4 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) VGS = 12 V VGS = 14 V 8 VGS = 16 V 6 VGS = 18 V VGS = 20 V 4 Tj = -40 C 14 12 10 Tj = 150 C 8 Tj = 25 C 6 4 Conditions: IDS = 300 A tp = 200 s 2 16 2 0 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (C) Fig 5. Typical On-Resistance vs. Temperature and Gate Voltage 10 12 14 16 18 20 Gate-Source Voltage, VGS (V) Fig 6. Typical On-Resistance vs. Gate Voltage 3 Typical Performance -4.0 500 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 400 VGS = 0 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) Conditions: VDS = 20 V tp < 200 s TJ = 150 C 300 TJ = 25 C 200 TJ = -40 C 100 2 4 6 8 10 12 -300 VGS = -5 V -400 14 -2.0 -1.5 -1.0 -0.5 Fig 8. Typical Diode Behavior TJ = -40 C -4.0 0.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 0 -100 -100 -200 -300 -400 Drain-Source Current, IDS (A) -2.5 Drain-Source Current, IDS (A) -3.0 -600 Drain-Source Voltage VDS (V) Fig 7. Typical Transfer Characteristic For Various Temperatures -3.5 -500 Conditions: TJ = -40 C tp = 200 s Gate-Source Voltage, VGS (V) -4.0 -200 VGS = -2 V 0 0 -100 -200 -300 VGS = -2 V -400 VGS = -2 V Conditions: TJ = 25C tp = 200 s VGS = 0 V VGS = -5 V Conditions: TJ = 150C tp = 200 s -600 Drain-Source Voltage VDS (V) Fig 10. Typical Diode Behavior TJ = 150 C 3.0 25 Conditions VDS = 10 V IDS = 15 0.5mA mA Conditions: TJ = 25 C IDS = 300 A VDS = 1000 V 20 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) -500 -600 Drain-Source Voltage VDS (V) Fig 9. Typical Diode Behavior TJ = 25 C 2.5 VGS = 0 V VGS = -5 V -500 2.0 1.5 1.0 0.5 15 10 5 0 0.0 -50 -25 0 25 50 75 100 125 150 Junction Temperature TJ (C) Fig 11. Typical Threshold Voltage vs. Temperature -5 0 200 400 600 800 1000 1200 Gate Charge (nC) Fig 12. Typical Gate Charge 4 Typical Performance -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -3.0 0.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 0 VGS = 0 V -100 VGS = 5 V -200 VGS = 10 V VGS = 15 V -300 VGS = 20 V -400 Fig 13. Typical 3rd Quadrant Behavior TJ = -40 C -2.0 -1.5 VGS = 10 V -1.0 -0.5 -200 VGS = 15 V -300 VGS = 20 V -400 -500 Conditions: TJ = 25C 25 C tp = 200 s -600 Drain-Source Voltage VDS (V) -2.5 -100 VGS = 5 V -500 Conditions: TJ = 25 -40C C tp = 200 s -3.0 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V -600 Drain-Source Voltage VDS (V) Fig 14. Typical 3rd Quadrant Behavior TJ = 25 C 1.6 0.0 0 1.4 -100 VGS = 5 V VGS = 10 V VGS = 20 V VGS = 15 V -200 -300 -400 1.2 Stored Energy, EOSS (mJ) Drain-Source Current, IDS (A) VGS = 0 V 1 0.8 0.6 0.4 0.2 Conditions: TJ = 150C 25 C tp = 200 s -500 0 0 -600 Drain-Source Voltage VDS (V) Fig 15. Typical 3rd Quadrant Behavior TJ = 150 C 100 600 800 1000 1200 Fig 16. Typical Output Capacitor Stored Energy 100 Conditions: TJ = 25 C VAC = 25 mV f = 200 kHz Ciss 10 Capacitance (nF) 10 Capacitance (nF) 400 Drain to Source Voltage, VDS (V) Conditions: TJ = 25 C VAC = 25 mV f = 200 kHz Ciss 200 Coss 1 Coss 1 Crss 0.1 Crss 0.1 0.01 0.01 0 50 100 Drain-Source Voltage, VDS (V) 150 Fig 17. Typical Capacitances vs. Drain-Source Voltage. (0-200V) 200 0 200 400 600 Drain-Source Voltage, VDS (V) 800 1000 Fig 18. Typical Capacitances vs. Drain-Source Voltage. (0-1000V) 5 Typical Performance 1800 450 Drain-Source Continous Current, IDS (DC) (A) Conditions: TJ 150 C Maximum Dissipated Power, Ptot (W) 1600 1400 1200 1000 800 600 400 200 Conditions: TJ 150 C 400 350 300 250 200 150 100 50 0 0 -25 0 25 50 75 100 -25 125 0 25 Fig 19. Max. Continuous Power Derating Curve vs. Case Temperature. 75 100 125 Fig 20. Max. Continuous Current Derating Curve vs. Case Temperature 100E-3 100E-3 0.5 Junction To Case Impedance, Z thJC (oC/W) Junction To Case Impedance, Z thJC (oC/W) 50 Case Temperature, TC (C) Case Temperature, TC (C) 0.3 0.1 10E-3 0.05 0.02 1E-3 SinglePulse 0.01 100E-6 0.5 10E-3 0.3 0.1 0.05 1E-3 0.02 SinglePulse 0.01 100E-6 10E-6 10E-6 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 1E-6 10E-6 100E-6 Time, tp (s) 1E-3 10E-3 100E-3 1 Time, tp (s) Fig 21. Typical Transient Thermal Impedance MOSFET Fig 22. Typical Transient Thermal Impedance DIODE 1200 Conditions: TJ = 25 C VDD = 600 V IDS = 300 A VGS = -5/+20 V 1 s 1000 100 s Limited by RDS On 100.00 800 1 ms 100 ms Time (ns) Drain-Source Current, IDS (A) 1000.00 10.00 1.00 td (off) 600 td (on) 400 tr 0.10 200 Conditions: TC = 25 C D = 0, Parameter: tp 0.01 0.100 tf 0 1.000 10.000 100.000 1000.000 Drain-Source Voltage, VDS (V) Fig 23. MOSFET Safe Operating Area 0 5 10 15 20 25 30 35 40 External Gate Resistor, RG(ext) (Ohms) Fig 24. Typical Inductive Switching Time vs Gate Resistance (VDD = 600V, ID = 300A) 6 Typical Performance 20 30 Conditions: TJ = 25 C VDD = 600 V RG(ext) = 2.5 VGS = -5/+20 V L = 77 H 16 Switching Loss (mJ) 14 Conditions: TJ = 25 C VDD = 800 V RG(ext) = 2.5 VGS = -5/+20 V L = 77 H 25 12 Switching Loss (mJ) 18 ETotal 10 8 6 EOn 4 20 ETotal 15 10 EOn 5 EOff EOff 2 0 0 0 50 100 150 200 250 300 350 400 450 0 50 100 150 Drain to Source Current, IDS (A) 250 300 350 400 Fig 25. Typical Clamped Inductive Switching Energy vs Drain Current (V DD = 600V) Fig 26. Typical Clamped Inductive Switching Energy vs Drain Current (V DD = 800V) 14 120 Conditions: TJ = 25 C VDD = 600 V IDS =300 A VGS = -5/+20 V L = 77 H ETotal 12 100 Switching Loss (mJ) 10 Switching Loss (mJ) 200 8 EOff 6 EOn Conditions: VDD = 600 V RG(ext) = 2.5 IDS =300 A VGS = -5/+20 V L = 77 H 4 2 450 Drain to Source Current, IDS (A) 80 ETotal 60 EOn 40 EOff 20 0 0 0 25 50 75 100 125 150 175 Junction Temperature, TJ (C) Fig 27. Typical Switching Loss vs. Temperature 0 5 10 15 20 25 30 35 40 45 External Gate Resistor RG(ext) (Ohms) Fig 28. Typical Switching Loss vs. Gate Resistance 7 Schematic Mechanical Characteristics (in mm) 8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: CAS300M12BM2