1
CAS300M12BM2
1.2kV, 5.0 mΩ All-Silicon Carbide
Half-Bridge Module
Z-FET™ MOSFET and Z-Rec™ Diode
Module Features Package 62 mm x 106 mm x 30 mm
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, fail-safe device operation
Ease of paralleling
Copper baseplate and aluminum nitride insulator
System Benefits
Enables compact and lightweight systems
High efficiency operation
Mitigates over-voltage protection
Reduces thermal requirements
Enables simplified topologies
Applications
Induction Heating
Motor Drives
Solar and Wind Inverters
UPS and SMPS
Traction
Maximum Ratings (TC = 25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VDSmax
Drain – Source Voltage
1.2
kV
VGSmax
Gate – Source Voltage
-10/+25
V
Absolute maximum values
VGSop
Gate – Source Voltage
-5/+20
V
Recommended operational values
ID
Continuous Drain Current
404
A
VGS = 20 V, TC = 25 °C
Fig 20
285
A
VGS = 20 V, TC = 90 °C
IDpulse
Pulsed Drain Current
1500
A
Pulse width tP = 200 µs repetition rate
limited by TJ(max), TC = 25°C
TJmax
Junction Temperature
150
°C
TC
Tstg
Case and Storage Temperature
Range
-40 to
+125
°C
Ptot
Maximum Power Dissipation
1660
W
TC = 25 °C, TJ = 150 °C
Visol
Case Isolation Voltage
4.0
kV
AC, 50 Hz, 1 min
Lstray
Stray Inductance
14
nH
Measured between terminals 2 and 3
M
Mounting Torque
5
Nm
To heatsink and terminals
G
Weight
300
g
Clearance Distance
12
mm
Terminal to terminal
Creepage Distance
30
mm
Terminal to terminal
40
mm
Terminal to baseplate
VDS
= 1.2 kV
Esw,Total@300A
= 12.0 mJ
RDS(on)
= 5.0 mΩ
Package
Marking
Half Bridge Module
CAS300M12BM2
2
Electrical Characteristics (TC = 25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
Min
Typ
Max
V(BR)DSS
Drain – Source Breakdown
Voltage
1.2
kV
VGS = 0 V, IDS = 1 mA
VGS(th)
Gate Threshold Voltage
2.0
2.3
V
VDS = 10 V, IDS = 15 mA
Fig 11
IDSS
Zero Gate Voltage
Drain Current
500
2000
µA
VDS = 1.2 kV, VGS = 0 V
1000
VDS = 1.2 kV, VGS = 0 V
TJ = 150 °C
IGSS
Gate-Source Leakage Current
1
100
nA
VGS = 20 V, VDS = 0 V
RDS(on)
Drain-Source On-State
Resistance
5.0
5.7
mΩ
VGS = 20 V, IDS = 300 A
Fig 4, 5
and 6
8.6
9.8
VGS = 20 V, IDS = 300 A,
TJ = 150 °C
gfs
Transconductance
94.8
S
VDS = 20 V, IDS = 300 A
Fig 7
93.3
VDS = 20 V, IDS = 300 A,
TJ = 150 °C
CISS
Input Capacitance
11.7
nF
VDS = 600 V f = 200 kHz,
VAC = 25 mV
Fig 17,
18
COSS
Output Capacitance
2.55
CRSS
Reverse Transfer Capacitance
0.07
td(on)
Turn-On Delay Time
76
VDD = 600 V, VGS = -5/20 V
ID = 300 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Per IEC60747-8-4 pg 83
Inductive Load
Fig 24
tr
Rise Time
68
td(off)
Turn-Off Delay Time
168
tf
Fall Time
43
EON
Turn-On Switching Energy
6.05
mJ
VDS = 600 V, VGS = -5 / 20 V
IDS = 300 A, RG = 2.5 Ω,
Inductive Load
Fig 25
EOFF
Turn-Off Switching Energy
5.95
Free-Wheeling Diode Characteristics
Symbol
Parameter
Value
Unit
Test Conditions
Notes
Min
Typ
Max
VSD
Diode Forward Voltage
1.7
2.0
V
ISD = 300 A, TJ = 25°C, VGS = 0 V
Fig 8, 9
and 10
2.2
2.5
V
ISD = 300 A, TJ = 150°C, VGS = 0 V
QC
Total Capacitive Charge
3.2
µC
Note: The reverse recovery is purely capacitive.
Gate Charge Characteristics
Symbol
Parameter
Value
Unit
Test Conditions
Notes
Min
Typ
Max
QGS
Gate to Source Charge
166
nC
VDS = 800 V, VGS = -5 /+ 20 V
IDS = 300 Amps
Per JEDEC24 pg 27
Fig 12
QGD
Gate to Drain Charge
475
QG
Total Gate Charge
1025
RG
Internal Gate Resistance
3.0
Ω
f = 200 kHz, VAC = 25 mV
Thermal Characteristics
Symbol
Parameter
Value
Unit
Test Conditions
Notes
Min
Typ
Max
RθJCM
Thermal Resistance Junction to
Case for MOSFET
0.070
0.075
°C/W
TC = 90 °C, Tj =150 °C
Pdis = Pmax
Fig 17
RθJCD
Thermal Resistance Junction to
Case for Diode
0.073
0.076
Fig 18
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Typical Performance
Fig 1. Typical Output Characteristics TJ = -40 °C
Fig 2. Typical Output Characteristics TJ = 25 °C
Fig 3. Typical Output Characteristics TJ = 150 °C
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical On-Resistance vs. Temperature and
Gate Voltage
Fig 6. Typical On-Resistance vs. Gate Voltage
0
100
200
300
400
500
600
0 1 2 3 4 5 6 7 8
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= -40°C
tp= 200 µs
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
0
100
200
300
400
500
600
0 1 2 3 4 5 6 7 8
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 25°C
tp= 200 µs
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
0
100
200
300
400
500
600
012345678
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 150°C
tp= 200 µs
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 025 50 75 100 125 150
On Resistance, RDS On (p.u.)
Junction Temperature, TJ(°C)
Conditions:
IDS = 300 A
VGS = 20 V
tp= 200 µs
0
2
4
6
8
10
12
-50 -25 025 50 75 100 125 150
On Resistance, RDS On (mΩ)
Junction Temperature, TJ(°C)
Conditions:
IDS = 300 A
tp= 200 µs
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V VGS = 12 V
0
2
4
6
8
10
12
14
16
18
20
10 12 14 16 18 20
On-Resistance, RDS ON (mΩ)
Gate-Source Voltage, VGS (V)
Tj= -40 °C
Tj= 25 °C
Tj= 150 °C
Conditions:
IDS = 300 A
tp= 200 µs
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Typical Performance
Fig 7. Typical Transfer Characteristic For Various
Temperatures
Fig 8. Typical Diode Behavior TJ = -40 °C
Fig 9. Typical Diode Behavior TJ = 25 °C
Fig 10. Typical Diode Behavior TJ = 150 °C
Fig 11. Typical Threshold Voltage vs. Temperature
Fig 12. Typical Gate Charge
0
100
200
300
400
500
0 2 4 6 8 10 12 14
Drain-Source Current, IDS (A)
Gate-Source Voltage, VGS (V)
Conditions:
VDS = 20 V
tp < 200 µs
TJ= 150 °C
TJ= -40 °C
TJ= 25 °C
-600
-500
-400
-300
-200
-100
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= -40 °C
tp= 200 µs
VGS = -2 V
VGS = -5 V
VGS = 0 V
-600
-500
-400
-300
-200
-100
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 25°C
tp= 200 µs
VGS = -2 V
VGS = -5 V VGS = 0 V
-600
-500
-400
-300
-200
-100
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 150°C
tp= 200 µs
VGS = -2 V
VGS = -5 V
VGS = 0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 025 50 75 100 125 150
Threshold Voltage, Vth (V)
Junction Temperature TJ(°C)
Conditions
VDS = 10 V
IDS = 0.5 mA
Conditions
VDS = 10 V
IDS = 15 mA
-5
0
5
10
15
20
25
0200 400 600 800 1000 1200
Gate-Source Voltage, VGS (V)
Gate Charge (nC)
Conditions:
TJ = 25 °C
IDS = 300 A
VDS = 1000 V
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Typical Performance
Fig 13. Typical 3rd Quadrant Behavior TJ = -40 °C
Fig 14. Typical 3rd Quadrant Behavior TJ = 25 °C
Fig 15. Typical 3rd Quadrant Behavior TJ = 150 °C
Fig 16. Typical Output Capacitor Stored Energy
Fig 17. Typical Capacitances vs. Drain-Source
Voltage. (0-200V)
Fig 18. Typical Capacitances vs. Drain-Source
Voltage. (0-1000V)
-600
-500
-400
-300
-200
-100
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 25 °C
tp= 200 µs
Conditions:
TJ= -40 °C
tp= 200 µs
VGS = 10 V
VGS = 5 V
VGS = 20 V
VGS = 15 V
VGS = 0 V
-600
-500
-400
-300
-200
-100
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 25 °C
tp= 200 µs
Conditions:
TJ= 25°C
tp= 200 µs
VGS = 10 V
VGS = 5 V
VGS = 20 V
VGS = 15 V
VGS = 0 V
-600
-500
-400
-300
-200
-100
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 25 °C
tp= 200 µs
Conditions:
TJ= 150°C
tp= 200 µs
VGS = 10 V
VGS = 5 V
VGS = 20 V
VGS = 15 V
VGS = 0 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0200 400 600 800 1000 1200
Stored Energy, EOSS (mJ)
Drain to Source Voltage, VDS (V)
0.01
0.1
1
10
100
050 100 150 200
Capacitance (nF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:
TJ= 25 °C
VAC = 25 mV
f = 200 kHz
Crss
0.01
0.1
1
10
100
0200 400 600 800 1000
Capacitance (nF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:
TJ= 25 °C
VAC = 25 mV
f = 200 kHz
Crss
6
Typical Performance
Fig 19. Max. Continuous Power Derating Curve vs.
Case Temperature.
Fig 20. Max. Continuous Current Derating Curve
vs. Case Temperature
Fig 21. Typical Transient Thermal Impedance -
MOSFET
Fig 22. Typical Transient Thermal Impedance -
DIODE
Fig 23. MOSFET Safe Operating Area
Fig 24. Typical Inductive Switching Time vs Gate
Resistance (VDD = 600V, ID = 300A)
0
200
400
600
800
1000
1200
1400
1600
1800
-25 025 50 75 100 125
Maximum Dissipated Power, Ptot (W)
Case Temperature, TC(°C)
Conditions:
TJ≤ 150 °C
0
50
100
150
200
250
300
350
400
450
-25 025 50 75 100 125
Drain-Source Continous Current, IDS (DC) (A)
Case Temperature, TC(°C)
Conditions:
TJ≤ 150 °C
10E-6
100E-6
1E-3
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, ZthJC (oC/W)
Time, tp(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
10E-6
100E-6
1E-3
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, ZthJC (oC/W)
Time, tp(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
0.01
0.10
1.00
10.00
100.00
1000.00
0.100 1.000 10.000 100.000 1000.000
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
100 µs
1 ms
1 µs
Conditions:
TC= 25 °C
D = 0,
Parameter: tp
Limited by RDS On
100 ms
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30 35 40
Time (ns)
External Gate Resistor, RG(ext) (Ohms)
Conditions:
TJ= 25 °C
VDD = 600 V
IDS = 300 A
VGS = -5/+20 V
td (off)
td (on)
tf
tr
7
Typical Performance
Fig 25. Typical Clamped Inductive Switching
Energy vs Drain Current (VDD = 600V)
Fig 26. Typical Clamped Inductive Switching
Energy vs Drain Current (VDD = 800V)
Fig 27. Typical Switching Loss vs. Temperature
Fig 28. Typical Switching Loss vs. Gate Resistance
0
2
4
6
8
10
12
14
16
18
20
050 100 150 200 250 300 350 400 450
Switching Loss (mJ)
Drain to Source Current, IDS (A)
EOff
EOn
ETotal
Conditions:
TJ= 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
0
5
10
15
20
25
30
050 100 150 200 250 300 350 400 450
Switching Loss (mJ)
Drain to Source Current, IDS (A)
EOff
EOn
ETotal
Conditions:
TJ= 25 °C
VDD = 800 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
0
2
4
6
8
10
12
14
025 50 75 100 125 150 175
Switching Loss (mJ)
Junction Temperature, TJ(°C)
EOff
EOn
ETotal
Conditions:
VDD = 600 V
RG(ext) = 2.5 Ω
IDS =300 A
VGS = -5/+20 V
L = 77 μH
0
20
40
60
80
100
120
0 5 10 15 20 25 30 35 40 45
Switching Loss (mJ)
External Gate Resistor RG(ext) (Ohms)
EOff
EOn
ETotal
Conditions:
TJ= 25 °C
VDD = 600 V
IDS =300 A
VGS = -5/+20 V
L = 77 μH
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Schematic
Mechanical Characteristics (in mm)
Mouser Electronics
Authorized Distributor
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CAS300M12BM2