IRF9520NS/L
HEXFET® Power MOSFET
PD -91522A
VDSS = -100V
RDS(on) = 0.48 Ω
ID = -6.8A
5/13/98
S
D
G
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.1
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** – – – 4 0
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V-6.8
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V-4.8 A
IDM Pulsed Drain Current -27
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 140 mJ
IAR Avalanche Current-4.0 A
EAR Repetitive Avalanche Energy4.8 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9520L) is available for low-
profile applications.
Description
2
D Pa k
TO-262
lAdvanced Process Technology
lSurface Mount (IRF9520S)
lLow-profile through-hole (IRF9520L)
l175°C Operating Temperature
lFast Switching
lP-Channel
lFully Avalanche Rated
IRF9520NS/L
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.48 ΩVGS = 10V, ID = -4.0A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 1.4 ––– ––– S VDS = -50V, ID = -4.0A
––– ––– -25 µA VDS = -100V, VGS = 0V
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 27 ID = -4.0A
Qgs Gate-to-Source Charge ––– ––– 5.0 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = -50V
trRise Time ––– 47 ––– ID = -4.0A
td(off) Turn-Off Delay Time ––– 28 ––– RG = 22Ω
tfFall Time ––– 31 ––– RD = 12Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance ––– 350 – – – VGS = 0V
Coss Output Capacitance ––– 110 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance
Starting TJ = 25°C, L = 18mH
RG = 25Ω, IAS = -4.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ -4.0A, di/dt ≤ -300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Uses IRF9520N data and test conditions
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -4.0A, VGS = 0V
trr Reverse Recovery Time ––– 100 150 n s TJ = 25°C, IF = -4.0A
Qrr Reverse Recovery Charge ___ 420 630 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
S
D
G
-6.8
-27
IRF9520NS/L
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-6.7A
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
4 5 6 7 8 9 10
V = 10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
GS
D
T = 175 C
J°
T = 25 C
J°
IRF9520NS/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.8 1.4 2.0 2.6
-V ,Source-to-Drain Volta
g
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
0.1
1
10
100
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 175 C
= 25 C
°°
J
C
-V , Drain-to-Source Volta
g
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
200
400
600
800
-V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
0 5 10 15 20 25
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-4.0 A
V =-20V
DS
V =-50V
DS
V =-80V
DS
IRF9520NS/L
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
IRF9520NS/L
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
tpV
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
V
DD
DRIVER A
15V
-20V
25 50 75 100 125 150 175
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.7A
-2.8A
-4.0A
IRF9520NS/L
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRF9520NS/L
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
R EF.
6.47 (.255 )
6.18 (.243 )
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.208)
4 .78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .4 9 (.6 10)
14 .7 3 (.5 80)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MA X.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIM ENSION : INCH.
4 HEATSINK & LEA D DIM ENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.25 ( .0 10) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17 .78 (.700)
3.81 (.150)
2.08 (.082)
2X
LEAD ASSIGNMENTS
1 - GAT E
2 - DRAIN
3 - SOURCE
2.54 (.100)
2X
PAR T N UM BER
INTERNATIONAL
RE CTIFIE R
LOG O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LOT CO D E
F530S
9B 1M
9246
A
IRF9520NS/L
Package Outline
TO-262 Outline
TO-262
Part Marking Information
IRF9520NS/L
Tape & Reel Information
D2Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
3
4
4
TRR
FE ED D IRE CTION
1.85 (.0 73)
1.65 (.0 65)
1.60 (.0 63)
1.50 (.0 59)
4.10 (.161)
3.90 (.153)
TRL
FE ED D IRE CTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
1 1.60 (.457)
1 1.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13 .5 0 (.53 2)
12 .8 0 (.50 4)
330.00
(14.173)
MAX.
27 .40 ( 1.079)
23 .90 ( .941)
60.00 (2.362)
M IN .
30 .40 (1.19 7)
M A X .
26 .40 (1.03 9)
24 .40 (.961 )
NOT ES :
1. CO M F O RM S T O EIA-418.
2. CONTROL LING DIMENSION: MILLIMETER.
3. DIM ENSION M EASU RED @ H UB.
4. INCLUDES FLANGE DISTORTION @ OU TER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
