SUE ~ SEMIKRON INC D WM 4136671 O003946e b2)1 MMSEKG SEMIKRON Vrsm | VRRM ( w) Itams (maximum values for continuous operation) Vora | \ dt Zor 220A 280A trav (sin. 180; Tease =... C) Vv Vv V/us 140 A (80 C) 178 A (78 C) 500 400 200 SKT 130/04 C SKT 160/04 C 700 600 200 SKT 130/06 C* SKT 160/06 C 900 800 200 SKT 130/08 C SKT 160/08 C 1300 | 1200 200 SKT 130/12 C* SKT 160/12 C* 1000 SKT 130/12 E SKT 160/12 E 1500 } 1400 | 1000 SKT 130/14 E SKT 160/14 E 1700 | 1600 ; 1000 SKT 130/16 E* SKT 160/16 E* Symbol | Conditions SKT 130 SKT 160 ITAV sin. 180; Tease = 85C 130A 160A Itsm Ty = 25C 3500 A 4300A Ty = 130C 3000 A 3750 A it Ty = 25C 61000 A2s | 92500 As Ty = 130C 45000 As | 70000 As tga Ty = 25C; Iq = 1A;die/dt = 1A/ps typ. 1 ps tor Vp = 0,67 -VornmM typ. 2 us (di/dt)cr) f = 50...60Hz 100 A/ us lH Ty = 25C; typ./max. 150 mA/250 mA IL Ty = 25C;Re = 33Q; typ./max. 300 mA/600 mA tg Ty = 130C; typ. 120 us Vr [Ty = 25C; Ir = 500A; max. 225V | 1,75V Vico) | Ty = 130C 12V 1,0V It Ty = 130C 22mQ2 | 15m2 Ipp, IRD | Ty = 130C; Vop = Vorm ;Vap = VARM 50mA 50 mA Vet Ty = 25C 3V lat Ty = 25C 200 mA Veo | Ty = 130C 0,25 V lap Ty = 180C 10mA Rihjo cont. 0,16 C/W sin. 180/rec. 120 0,18/0,20 C/W Riheh 0,03 C/W Ty ~40... +180C Tstg 55... +150C M SI units 30 Nm US units 265 Ib. in. a 59,81 m/s" w 2,10g Case B6 * Available with UNF thread T:2S1Q Thyristors SKT 130 SKT 160 ; - aw - Features e@ Hermetic metal cases with ceramic insulators e@ Threaded studs ISO M16 x 1,5 or UNF 3/4-16 e@ International standard cases Typical Applications e DC motor coniro! (e. g. for machine tools} e@ Controlled rectifiers (e. g. for battery charging) e AC controllers (e. g. for temperature control) by SEMIKRON B3-23SLE D MM 4136671 0003483 Sha MESEKG SEMIKRON INC T=25-190 300 300 w thja - Ww 0,4 0,35 1 200 200 ! 0,7 I 0,8 100 12 100 1,4 16 ociw RB TAY Peay 0 0 0 Iray 50 100 150 A OTamb 80 100 C 150 Fig. 1a Power dissipation vs. on-state current and ambient temperature 400 400 Ww 160 Ww 300 300 200 200 100 100 C/W Pray Pray 0 0 0 lav 50 100 150 A 0 Tomb 50 100 150 Fig. 1b Power dissipation vs. on-state current and ambient temperature 200 250 A A 180 _SKT 160 160 200 140 120 150 100 30 80 60 100 60 60 80 30 40 50 = 18 20 oy ' el Itay TAV 0 0 Tease 50 100 150 oO Tease 50 100 Set 150 Fig.2.a Rated on-state current vs. case temperature Fig. 2b Rated on-state current vs. case temperature B324 by SEMIKRONSLE D MM 4136671 O0O03484 4T4 BBSEKG SEMIKRON ~ SEMIKRON INC 1000 C-SKT 130 60 |-S KT 160 400 I dad 200 100 60 40 20 Qn 10 1 or 2 4 6 10 20 40 60A/1s100 Fig. 3 Recovered charge vs. current decrease Ww rT TP iti Tit 4 | 0,30 oe a Rthea TI 0,28 K11l -M16/ 110 C/W + K 0,55 - M 16] 0,55 C/W a KI] -M16/0,35C/W-6 m/s |_| 0,26 K 0,55 - M 16| 0,17 C/W-6 m/s | J \ Pi leri tet ff Rthi. = 0,16 C/W 0,24 \ ~~ [Reh ont +~+ NY 0,22 NA Nw 0,20 NN. st rec. TL sin. teed 018} -SKT 130 inc -T SKT 160 | 0,6 Ef 1 i ty 0 6 30 60 90 120 150 180 Fig. 5 Thermal resistance vs. conduction angle 600 A SKT 160 400 200 = 130 25130 25C it 0 Oo vy (98 1 15 2 Vv 25 Fig.6 b On-state characteristics T~25-19 0,2 3g SKT 130 Zthih SKT 160 015 Zthic OA ' ml 8 :Zahjz [ChW} rec, 360, 0 180; 0,020 0,028 0,05 420 | 0,027/0,040 90}0,035|0,051 60} 0,051 10,068 30 | 0,082] 0,090 15 [0,103 {0,103 Zethjt 1073 5 10-2 1071 408 101 s 102 Fig. 4 Transient thermal impedance vs. time 600 SKT 130 \ 400 200 ' 1 Tyj = 130 25 130 25C iT O vy OS 1 45 2 V 25 Fig. 6 a On-state characteristics 1500 SKT 130 1000 500 Pray o Hay 100 200 300 400 =A 500 Fig. 7 a Power dissipation vs. on-state current by SEMIKRON B3~25SLE D MM 4336671 0003465 330 MMSEKG ~ SEMIKRON INC 1500 SKT1GO - 1000 500 Pray % Iz4y 100 200 300 400'ii00-s A GC Fig. 7b Power dissipation vs. on-state current Ss SKT 160 Ig2 345 2 3465 Fig. 9 Gate trigger characteristics 25C 3500 4300 t Fig. 8 Surge overload current vs. time 2345 A10? T~25-19 - (A) 130C 3000 3 B3-26 by SEMIKRON