FGH60N60SMD tm 600V, 60A Field Stop IGBT Features General Description * Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential. * Positive Temperaure Co-efficient for easy parallel operating * High current capability * Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A * High input impedance * Fast switching * Tighten Parameter Distribution * RoHS compliant Applications * Solar Inverter, UPS, SMPS, PFC * Induction Heating E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage 20 V IC ICM (1) IF IFM (1) PD Collector Current @ TC = 25oC 120 A Collector Current @ TC = 100oC 60 A Pulsed Collector Current Diode Forward Current @ TC = 25oC Diode Forward Current @ TC = 100oC Pulsed Diode Maximum Forward Current o 180 A 60 A 30 A 180 A W Maximum Power Dissipation @ TC = 25 C 600 Maximum Power Dissipation @ TC = 100oC 300 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature (c)2011 Fairchild Semiconductor Corporation FGH60N60SMD Rev. A1 1 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT March 2011 Symbol Parameter Typ. Max. Units o RJC(IGBT) Thermal Resistance, Junction to Case - 0.25 RJC(Diode) Thermal Resistance, Junction to Case - 1.1 oC/W C/W RJA Thermal Resistance, Junction to Ambient - 40 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGH60N60SMD FGH60N60SMD TO-247 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250A - 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - 400 nA IC = 250A, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.5 6.0 V IC = 60A, VGE = 15V - 1.9 2.5 V IC = 60A, VGE = 15V, TC = 175oC - 2.1 - V - 2915 - pF - 270 - pF - 85 - pF 18 27 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 47 70 ns td(off) Turn-Off Delay Time - 104 146 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 400V, IC = 60A, RG = 3, VGE = 15V, Inductive Load, TC = 25oC - 50 68 ns - 1.26 1.94 mJ Turn-Off Switching Loss - 0.45 0.6 mJ Total Switching Loss - 1.71 2.54 mJ td(on) Turn-On Delay Time - 18 - ns tr Rise Time - 41 - ns td(off) Turn-Off Delay Time - 115 - ns tf Fall Time - 48 - ns VCC = 400V, IC = 60A, RG = 3, VGE = 15V, Inductive Load, TC = 175oC Eon Turn-On Switching Loss - 2.1 - mJ Eoff Turn-Off Switching Loss - 0.78 - mJ Ets Total Switching Loss - 2.88 - mJ FGH60N60SMD Rev. A1 2 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 60A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge FGH60N60SMD Rev. A1 Min. Typ. Max Units - 189 284 nC - 20 30 nC - 91 137 nC Units TC = 25C unless otherwise noted Test Conditions IF = 30A IF =30A, dIF/dt = 200A/s 3 Min. Typ. Max TC = 25oC - 2.1 2.7 TC = 175oC - 1.7 - TC = 175oC - 79 - - 30 39 - 72 - TC = 25oC TC = 175oC TC = 25oC - 44 62 TC = 175oC - 238 - V uJ ns nC www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 180 20V 15V o TC = 25 C 180 o TC = 175 C 12V 150 120 90 60 VGE = 8V 10V 90 VGE = 8V 60 30 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V o TC = 25 C o TC = 175 C 120 Common Emitter VCE = 20V 150 Collector Current, IC [A] 150 Collector Current, IC [A] 12V 120 30 90 60 o TC = 25 C o TC = 175 C 120 90 60 30 30 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 2 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.0 120A 2.5 60A 2.0 IC = 30A 1.5 1.0 25 12 4 Common Emitter o TC = -40 C 16 12 8 60A 120A 4 IC = 30A 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGH60N60SMD Rev. A1 4 6 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 3.5 Collector-Emitter Voltage, VCE [V] 20V 15V 150 10V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o T C = 25 C 16 12 8 60A 120A 4 IC = 30A 0 o TC = 175 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 60A 8 12 16 Gate-Emitter Voltage, V GE [V] 4 20 Figure 9. Capacitance Characteristics 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 7000 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] 6000 o TC = 25 C Capacitance [pF] IC = 30A 0 4 120A 4 5000 4000 Cies 3000 2000 Coes 1000 TC = 25 C 12 VCC = 200V 300V 9 400V 6 3 Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 0 30 0 Figure 11. SOA Characteristics 80 120 160 Gate Charge, Qg [nC] 200 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 300 10s 100 80 tr 100s 1ms 10 ms DC 10 60 Switching Time [ns] Collector Current, Ic [A] 40 1 *Notes: o 0.1 40 td(on) Common Emitter VCC = 400V, VGE = 15V IC = 60A 20 1. TC = 25 C o TC = 25 C o 2. TJ = 175 C 3. Single Pulse o TC = 175 C 10 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] FGH60N60SMD Rev. A1 0 1000 5 10 20 30 40 Gate Resistance, RG [ ] 50 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A Common Emitter VGE = 15V, RG = 3 o TC = 25 C o Switching Time [ns] 1000 Switching Time [ns] TC = 25 C o TC = 175 C td(off) 100 tf o TC = 175 C 100 td(on) 10 1 10 0 10 20 30 Gate Resistance, RG [] 40 0 50 30 60 120 Figure 16. Switching Loss vs. Gate Resistance 1000 5 Eon Switching Loss [mJ] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 3 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 60A o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 1 0 30 60 90 0.1 120 0 10 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 20 30 40 Gate Resistance, RG [ ] 50 Figure 18. Turn off Switching SOA Characteristics 10 300 100 Collector Current, IC [A] Eon Switching Loss [mJ] 90 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Switching Time [ns] tr 1 Eoff 0.1 Common Emitter VGE = 15V, RG = 3 o TC = 25 C 10 Safe Operating Area o o TC = 175 C VGE = 15V, TC = 175 C 0.01 0 30 60 90 1 120 1 Collector Current, IC [A] FGH60N60SMD Rev. A1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequency 130 110 Square Wave 160 100 Collector Current, IC [A] Collector Current, IC [A] 180 Common Emitter VGE = 15V 120 90 80 70 60 50 40 30 o TJ < 175 C, D = 0.5, VCE = 400V VGE = 15/0V, RG = 3 140 120 100 o Tc = 75 C 80 o Tc = 100 C 60 40 20 20 10 25 0 1k 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] Figure 21. Forward Characteristics 10k 100k Switching Frequency, f [Hz] 1M Figure 22. Reverse Current 10000 200 o TC = 175 C 100 Reverse Current, ICES [uA] o Forward Current, IF [A] TC = 175 C o TC = 125 C o 10 TC = 75 C o TC = 25 C o TC = 25 C o TC = 75 C ---o TC = 125 C ---- 1000 100 o TC = 125 C 10 o TC = 75 C 1 0.1 o TC = 25 C o TC = 175 C 1 0 1 2 3 Forward Voltage, VF [V] 0.01 4 0 Figure 23. Stored Charge 200 300 400 Reverse Voltage,VR [V] 500 600 Figure 24. Reverse Recovery Time 100 350 o o TC = 25 C o 300 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 100 TC = 175 C ---- 250 200 150 100 di/dt = 200A/s di/dt = 100A/s 50 0 0 10 FGH60N60SMD Rev. A1 20 30 40 Forwad Current, IF [A] 50 TC = 25 C 90 o TC = 175 C ---- 80 70 60 di/dt = 100A/s 50 di/dt = 200A/s 40 30 20 60 0 7 10 20 30 40 Forward Current, IF [A] 50 60 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT Typical Performance Characteristics FGH60N60SMD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 25.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.5 0.1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH60N60SMD Rev. A1 8 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH60N60SMD Rev. A1 9 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I53 FGH60N60SMDF Rev. A1 10 www.fairchildsemi.com FGH60N60SMD 600V, 60A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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