tm
©2011 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
March 2011
Absolute Maximum Ratings
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
ICCollector Current @ TC = 25oC120 A
Collector Current @ TC = 100oC60 A
ICM (1) Pulsed Collector Current 180 A
IFDiode Forward Current @ TC = 25oC60 A
Diode Forward Current @ TC = 100oC30 A
IFM (1) Pulsed Diode Maximum Forward Current 180 A
PDMaximum Power Dissipation @ TC = 25oC600 W
Maximum Power Dissipation @ TC = 100oC300 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Notes:
1: Repetitive rating: Pulse widt h limited by max . junction temperature
FGH60N60SMD
600V, 60A Field Stop IGBT
G
E
C
ECG
COLLECTOR
(FLANGE)
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
General Description
Using Novel Field Stop IGBT Te chnology, Fair child’s new series
of Field Stop IGBTs offer the optimum performance for Solar
Inverter, U PS, SMPS, IH and PFC applications where low con-
duction and switching losses are essential.
2www.fairchildsemi.com
FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction to Case -0.25 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case -1.1 oC/W
RθJA Thermal Resistance, Junction to Ambient -40 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGH60N60SMD FGH60N60SMD TO-247 - - 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA600 - - V
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250μA-0.6 -V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 3.5 4.5 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60A, VGE = 15V -1.9 2.5 V
IC = 60A, VGE = 15V,
TC = 175oC-2.1 -V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-2915 -pF
Coes Output Capacitance -270 -pF
Cres Reverse Transfer Capacitance -85 -pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
-18 27 ns
trRise Time -47 70 ns
td(off) Turn-Off Delay Time -104 146 ns
tfFall Time -50 68 ns
Eon Turn-On Switching Loss -1.26 1.94 mJ
Eoff Turn-Off Switching Loss -0.45 0.6 mJ
Ets Total Switching Loss -1.71 2.54 mJ
td(on) Turn-On Delay Time
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
-18 -ns
trRise Time -41 -ns
td(off) Turn-Off Delay Time -115 -ns
tfFall Time -48 -ns
Eon Turn-On Switching Loss -2.1 -mJ
Eoff Turn-Off Switching Loss -0.78 -mJ
Ets Total Switching Loss -2.88 -mJ
3www.fairchildsemi.com
FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions Min. Typ. Max Units
QgTotal Gate Charge VCE = 400V, IC = 60A,
VGE = 15V
-189 284 nC
Qge Gate to Emitter Charge -20 30 nC
Qgc Gate to Collector Charge -91 137 nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 30A TC = 25oC - 2.1 2.7 V
TC = 175oC - 1.7 -
Erec Reverse Recovery Energy
IF =30A, dIF/dt = 200A/μs
TC = 175oC - 79 -uJ
trr Diode Reverse Recovery Time TC = 25oC - 30 39 ns
TC = 175oC - 72 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 44 62 nC
TC = 175oC - 238 -
4www.fairchildsemi.com
FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0246
0
30
60
90
120
150
180
VGE = 8V
20V
TC = 25oC
15V 12V
10V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0246
0
30
60
90
120
150
180
VGE = 8V
20V
TC = 175oC
15V 12V
10V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
30
60
90
120
150
180
Common Emitter
VGE = 15 V
TC = 25oC
TC = 175 oC
Collector Current, I C [A]
Collector-Emitter Voltage, V
CE
[V]
24681012
0
30
60
90
120
150
180 Common Emitter
VCE = 20V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Gate-Emitter Voltage,V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
IC = 30A
60A 120A
Common Emitter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, V
GE
[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
120A
60A
IC = 30A
Common Emitter
VGE = 15V
Collector-Emitt er Volt age, VCE [V]
Collector-EmitterCase Tem p erature , TC [oC]
5www.fairchildsemi.com
FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
IC = 30A
60A 120A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Ga te -E mitter V o ltage , V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
120A
IC = 30A
60A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, VCE [V]
Gate-E mitter Voltag e, V
GE
[V]
0 40 80 120 160 200
0
3
6
9
12
15
400V
Comm on Em itter
TC = 25oC
300V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Ga te Charge , Q
g
[nC]
1 10 100 1000
0.01
0.1
1
10
100
300
1ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10μs
100μs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
0 1020304050
10
20
40
60
80
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
td(on)
tr
Switching Time [ns]
Gate Resistance,
R
G
[
Ω
]
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FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
0306090120
1
10
100
1000
Common Emitter
VGE = 15V, R G = 3Ω
TC = 25oC
TC = 175oC tr
td(on)
Switching Time [ns]
Collecto r Current, IC [A]
0 1020304050
10
100
1000
6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG [ Ω]
0 1020304050
0.1
1
5
Common Emitter
VCC = 400V , VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
0306090120
1
10
100
1000
Common Em itt er
VGE = 15V, RG = 3Ω
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Collector C urren t, IC
[
A
]
0306090120
0.01
0.1
1
10
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
1 10 100 1000
1
10
100
300
Safe Operating Area
VGE = 15V , TC = 175oC
Collector Current, IC [A]
Collecto r -Emitter Vo lta ge, VCE [V]
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FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating Figure 20. Load Current Vs. Frequency
Figure 21. Forward Characteristics Figure 22. Reverse Current
Figure 23. Stored Charge Figure 24. Reverse Recovery Time
25 50 75 100 125 150 175
10
20
30
40
50
60
70
80
90
100
110
120
130
Common Em itter
VGE = 15V
Collector Current, IC [A]
Collector-EmitterCase Temperature, TC [oC]
1k 10k 100k 1M
0
20
40
60
80
100
120
140
160
180
Tc = 75oC
Square Wave
TJ < 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 3Ω
Collector Current, IC [A]
Switching Frequency, f [Hz]
Tc = 100oC
01234
1
10
100
200
TC = 125oC
TC = 75oC
TC = 25oC
TC = 175oC
Forward Voltage, V
F
[V]
Forward Current, IF [A]
TC = 25oC
TC = 75oC ----
TC = 125oC ----
TC = 175oC
0 100 200 300 400 500 600
0.01
0.1
1
10
100
1000
10000
TC = 125oC
TC = 25oC
TC = 175oC
TC = 75oC
Reverse Current, ICES [uA]
Reverse Voltage,VR [V ]
0 102030405060
0
50
100
150
200
250
300
350
TC = 25oC
TC = 175oC ----
di/dt = 200A/μsdi/dt = 100A/μs
Stored Recovery Charge, Qrr [nC]
Forwad Current, IF [A ]
0 102030405060
20
30
40
50
60
70
80
90
100
di/dt = 200A/μs
di/dt = 100A/μs
Reverse Recovery Time, trr [ns]
Forward Current, I
F
[A]
TC = 25oC
TC = 175oC ----
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FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 25.Transient Thermal Impedance of IGBT
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
0.5
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Du ty Fac to r , D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
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FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
FGH60N60SMD 600V, 60A Field Stop IGBT
FGH60N60SMDF Rev. A1 www.fairchildsemi.com
10
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tm
®
tm
tm
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Rev. I53
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