= ~ > 1 oO o = Wi mM = eH mM E = So a ao a = GTON JL D MM Sb42ei4 0001392 9 MMIC MA44700A Series Stackpack" & Super Stackpack Multiplier Diodes 242 Description M/A-COM Semiconductor Products Stackpack and Super Stackpack Multiplier Diodes are a family of Step Recovery diodes with several junctions in series in the same package. These diodes have substantially higher reverse voltage than single junction diodes with the same transition time. The Stackpack and Super Stackpack multiplier diodes are intended for use in high power, low multiplication ratio multipliers with output frequencies from L through X band. The higher breakdown voltage allows for larger input power. This results in output power as large as 60 watts in L band and 5-7 watts in X band. Features @ HIGH REVERSE VOLTAGE mi LOW TRANSITION TIME @ LOW CAPACITANCE @ LOW THERMAL RESISTANCE Each device in this family of diodes contains individually packaged Step Recovery diodes in a beryllia package. The individual diodes are soldered in series and encased in low loss packages. This assembly allows for closer match- ing of the individual chips. Each chip is then thermally heat sunk in parallel, resulting in a high voltage, low ther- mal resistance diode. The Stackpack family of diodes has two junction chips in series per diode. The Super Stackpack family of diodes has three junction chips in series per diode. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 * TELEX 94-9464MA44700A Series Stackpack and Super Stackpack Multiplier Diodes Specifications Tq = 25C STACKPACK (2 CHIP DIODES) 8-28 Minimum? Junction Minimum Maximum Maximum? Breakdown Capacitance Cutoff Transition Thermal Case Voltage Min./Max. Frequency |Time Ts, -10V| Resistance Model Numbert Style Vb (Volts) Cj (pF) (GHz) 10mA, (ps) (C/W) MA44710A-2 242 280 18.0-26.0 * 6000 3 MA44711A-2 242 160 8.0-10.0 50 2000 7 MA44712A-2 242 160 4.0-4.5 70 2000 11 MA44713A-2 242 120 2.5-3.5 120 600 13 MA44714A-2 242 120 1.5-2.5 120 500 15 MA44715A-2 250 120 1.0-1.5. . 140 600 18 MA44716A-2 250 90 0.8-1.3 150 300 22 MA44724A-2 250 90 1.0-1.8 145 200 20 MA44725A-2 250 80 1.0-1.5 145 180 25 MA44705A-2 250 80 0.5-0.7 160 120 40 MA44706A-2 250 60 0.3-0.5 180 100 50 * Fe is not specified. Rs is measured at ~ 12 volts and 1 GHz and is equal to .40 ohms maximum. NOMINAL CHARACTERISTICS N 1 Minor Carrier Available Suggested Output Lifetime Ty Output Power X3 Efficiency Frequency Range Model Numbert 10 mA/6 mA (ns) Range (Watts) (%) (GHz) MA44710A-2 450 60 60 0.5-1.0 MA44711A-2 160 35 65 1,0-2.5 MA44712A-2 130 20 55 2.0-4.0 MA44713A-2 60 10 50 3.0-5.0 MA44714A-2 60 7 50 5.0-8.0 MA44715A-2 50 6 50 5.5-9.0 MA44716A-2 30 5 45 7.0-9.0 MA44724A-2 30 5 45 7.0-10.0 MA44725A-2 20 4 45 7.0-10.0 MA44705A-2 18 2 40 8.0-12.0 MA44706A-2 10 28 508 - 9.0-13.0 OTES: . Standard case styles are listed for each model number. Other case styles can be furnished upon request. Consult the factory for additional information. microamperes. . Breakdown voitage is specified at a reverse current of 10 frequency of 1 MHz. Capacitance tolerance is nominally + 10%. Tolerances of + 5% are available on request at a nominal charge. at a frequency of 1 MHz. taneous bandwidth. . Rg is measured at 1 GHz. Cutoff frequency is calculated from Rg measurements at 1 GHz and capacitance measurements at - 12 volts . This is operable output frequency range and does not imply instan- . These are typical values at the midpoint of the specified frequency . Junction capacitance is specified at - 12 volts bias and measured at a range. Stackpack diodes and Super Stackpack diodes can be operated at full efficiency over a broad range of drive power. cathode end only. in X2 muitiplier. . Thermal resistance is specified with an infinite heat sink on the - Typical power output and efficiency for the MA44706-A2 are specified M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 1) D MM Sb42204 0001393 0 MENIC M/A-COM SEMICOND,BRLNGTON T-07+1112D MM Sb42224 0001394 2 mm Specifications T, = 25C MA44700A Series Stackpack and Super Stackpack Multiplier Diodes M/A-COM SEMICOND,BRLNGTON 1-07-11 STACKPACK (3 CHIP DIODES) Minimum2 Junction Minimum4 Maximum Maximum Breakdown Capacitance Cutoff Transition Thermal Case Voltage Min./Max. Frequency |Time Ts, -10V}| Resistance Model Number Style Vp (Volts) Cj (pF) (GHz) 10mA, (ps) (c/w) MA44711A-3 243 240 8.0-10.0 50 2000 6 MA44712A-3 243 240 4.0-5.0 70 2000 10 MA44713A-3 243 180 1.5-2.5 120 700 11 MA44714A-3 243 180 1.5-2.5 120 500 13 MA44715A-3 247 180 1.0-1.5 140 400 16 MA44716A-3 247 135 0.8-1.3 150 300 19 NOMINAL CHARACTERISTICS Minor Carrier Available Suggested Output Lifetime TL Output Power X3 Efficiency Frequency Range Model Numbert 10 mA/6 mA (ns) Range (Watts) (%) (GHz) MA44711A-3 160 50 65 1.0-2.5 MA44712A-3 130 30 55 2.0-4.0 MA44713A-3 60 15 50 3.0-5.0 MA44714A-3 60 10 50 5.0-8.0 MA44715A-3 50 8 50 5.5-9.0 MA44716A-3 30 7 45 7.0-9.0 NOTES: 1. Standard case styles are listed for each model number. Other case styles are available upon request. Consult the factory for additional information. 2. Breakdown voltage is specified at a reverse current of 10 microamperes. 3. Junction capacitance is specified at ~ 18 volts bias and measured at a frequency of 1 MHz. Capacitance tolerance is nominally + 10%. Tolerances of + 5% are available upon request at a nominal charge. 4. Rs is measured at 1 GHz. Cutoff frequency is calculated from Rs measurements at 1 GHz and capacitance measurements at - 18 volts at a frequency of 1 MHz. MAXIMUM RATINGS Reverse Voltage Same as Breakdown Voltage Operating Temperature -65C to + 150C Storage Temperature -65C to + 150C Temperature Coefficient of Capacitance 300 ppm/C HIGH RELIABILITY All diodes in the MA44700 series may be screened to TX, TXV specifications. For further high reliability infor- mation, contact the factory. Ordering Information 5. This is an operable output frequency range and does not imply instan- taneous bandwidth. 6. These are typical values at the midpoint of the specified frequency range. Stackpack diodes and Super Stackpack diodes can be operated at full efficiency over a broad range of drive power. 7. Thermal resistance is specified with an infinite heat sink on the cathode end only. ENVIRONMENTAL PERFORMANCE All multiplier varactors in the MA44700 series are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL-STD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other en- vironmental tests common to semiconductor products. Orders for products from M/A-COM Semiconductor Products, Inc. should be placed with our local sales office. Should there be a need for factory sales or applications engineering assistance, contact M/A-COM . M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464MA44700A Series Stackpack and Super Stackpack Multiplier Diodes 1 D WM 5642214 o001 3 q5 4 MN I C Case Styles @ DENOTES CATHODE = NOT TO SCALE M/A-COM SEMICOND sBRLNGTON 242 INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A 0.760 0.800 19,31 20,31 \ B 0.155 0.165 3,93 4,19 E DIA. Cc 0.180 0.190 4,57 4,83 D 0.390 0.430 9,91 10,91 | E 0.091 0.095 2,31 2,41 Cp = .18 pF Typical T-07-11 Lg = 5 nH Typical INCHES MILLIM MIN. MAX. 0.755 0.805 19,18 20,45 B 0.155 0.165 3,93 4,19 0.180 0.1 D 0.405 0.415 10 0.091 0.095 41 Cp = .18 pF Typical Lg = .5 nH Typical 250 MIN. 0.290 0.085 0.060 0.180 0. 4 | EL All specifications are subject to change without notice. Cp = 0.21 pF Typical Lg = 0.60 nH Typical aptivtiohed 8-30 M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464