NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D High Current Capacity and Wide ASO Applications: D Voltage Regulators D Relay Drivers D Lamp Drivers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 50V, IE = 0 - - 100 nA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 nA DC Current Gain hFE VCE = 2V, IC = 100mA 140 - 400 VCE = 2V, IC = 2A 35 - - VCE = 10V, IC = 50mA - 140 - Gain Bandwidth Product fT MHz Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Output Capacitance NTE2517 Cob Test Conditions Min Typ Max Unit - 10 - pF - 25 - pF - 110 300 mV - 250 500 mV - 0.85 1.2 V VCB = 10V, f = 1MHz NTE2518 Collector to Emitter Saturation Voltage NTE2517 VCE(sat) IC = 1A, IB = 50mA NTE2518 Base to Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 50mA Collector to Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 60 - - V Collector to Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = 50 - - V Emitter to Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 6 - - V - 35 - ns - 550 - ns - 350 - ns - 30 - ns Turn-On Time ton Storage Time NTE2517 tstg IC = 10A, IB1 = 10A, IB2 = 1A NTE2518 Fall Time tf .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4)