SEMITOP®3
Mosfet Module
SK 260MB10
Preliminary Data
Features
 
  
   
   
   
 !
"   
  
Typical Applications*
#   

 $ $
%&"
1) ' & (
  ( *+,
MB
Absolute Maximum Ratings - .+ ,(   
Symbol Conditions Values Units
MOSFET
/"" 011 /
/2"" 3.1 /
4 - .+ *1 ,5 0 .61 0*1 7
4' 8 0 5 - .+ *1 ,5 0 9:1 6:1 7
;<91===>0+1 ,
Inverse diode
4?-<4 - .+ *1 ,5 .61 0*1 7
4?' -<4' 8 0 5 - .+ *1 ,5 9:1 6:1 7
;<91===>0+1 ,
Freewheeling CAL diode
4?-<4 - , 7
;,
 < 91 === > 0.+ ,
 ( 01 .:1 ,
/ == +1 @( A'"( 0  0 .+11 B 6111 /
Characteristics - .+ ,(   
Symbol Conditions min. typ. max. Units
MOSFET
/A"" /2" -1/(4- +(: 7 C /"" /
/2" /2" - /"5 4- +(: 7 .(+ 6(6 /
4"" /2" -1/5/" - /""5 ;- .+ 0.+ , 011 +11 D7
42"" /2" - .1/ 5/" - 1 / 011 7
A" 4- 611 75 /2" - 01 /5 ;- .+ , .(+ E
A" 4- 611 75 /2" - 01 /5 ;- 0.+ , 6(+ 9(+ E
  '"?F ?
   G .H(: ?
 /2" -1/5/" - .+ /5 - 0 '@ .(I ?
 .(* ?
#" .(. 
   G 901 
/ - +1 /5 /2" - 01 /5
4- 611 7
9+1 
 A2- .+ E 09I1 
961 
A;<  '"?F   1(9+ 1(.6 JBK
Inverse diode
/" 4?- 611 75 /2" -1/5 ;- .+ , 1(H: /
4AA'   G 6. 7
L 4?- 611 75 $; - 0.+ ,5 A2- *(. E 6 D
 /A- +1 75 B - I11 7BD 
Free-wheeling diode
/?4?- 75 /2" - / /
4AA'   G 7
L 4?- 75 $; - , D
 /- 75 B - 7BD 
Mechanical data
'0  M .(+ N
61
 "F'4 &O6 .9
SK 260MB10 MOSFET,TRANSISTOR
1 21-10-2004 RAM © by SEMIKRON
http://store.iiic.cc/
Fig. 3 Output characteristic, tp= 80 µs, Tj= 25 °C
Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage
Fig. 7 Gate charge characteristic, IDp = 300 A Fig. 8 Diode forward characteristic, tp= 80 µs
SK 260MB10 MOSFET,TRANSISTOR
2 21-10-2004 RAM © by SEMIKRON
http://store.iiic.cc/
Dimensions in mm
"%22F" F #F47'F FA ?A F "#FA &4N" 7N F '%N 4N2 &4N" 4N F &G . 
 .9
'
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.
SK 260MB10 MOSFET,TRANSISTOR
3 21-10-2004 RAM © by SEMIKRON
http://store.iiic.cc/