DATA SHEET
The information in this document is subject to change without notice.
© 1988
Document No. P10958EJ6V0DS00 (6th edition)
Date Published April 1998 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2505-1,-2,-4, PS2505L-1,-2,-4
HIGH ISOLATION VOLTAGE
AC INPUT RESPONSE TYPE
MULTI PHOTOCOUPLER SERIES
The mark •
••
• shows major revised poi nts.
−NEPOCTM Series−
DESCRIPTION
The PS2505-1, -2, -4 and PS2505L-1, -2, -4 are optically coupled isolators containing GaAs light emitting diodes
and an NPN silicon phototransistor.
The PS2505-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2505L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• AC input response
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (VCEO = 80 V)
• High-speed switching (tr = 3
µ
s TYP., tf = 5
µ
s TYP.)
• Ordering number of taping product: PS2505L-1-E3, E4, F3, F4, PS2505L-2-E3, E4
• UL approved: File No. E72422 (S)
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
2
PS2505-1,-2,-4,PS2505L-1,-2,-4
PACKAGE DIMENSIONS (in millimeters)
DIP Type
2.54
43
12
PS2505-1 (New Package)
4.6 ± 0.35
1.25±0.15
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.50 ± 0.10
0.25
M
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
0 to 15˚
7.62
10.2 MAX.
6.5
0.50 ± 0.10
0.25
M
87
12
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
65
34
PS2505-2
20.3 MAX.
6.5
0.50 ± 0.10
0.25
M
16 15
12
14 13
34
12 11
56
10 9
78
PS2505-4
5.1 MAX.
6.5
PS2505-1
20.3 MAX.
6.5
7.62
0.50 ± 0.10
0.25
M
PS2505-4 (New Package)
0 to 15˚
TOP VIEW
TOP VIEW
TOP VIEW
16 15
12
1, 3, 5, 7. Anode, Cathode
2, 4, 6, 8. Cathode, Anode
9,11,13,15. Emitter
10,12,14,16. Collector
14 13
34
12 11
56
10 9
78
TOP VIEW
0.65
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
1.25±0.15
43
12
TOP VIEW
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
1.25±0.15 0.50 ± 0.10
0.25
M
7.62
0 to 15˚
7.62
0 to 15˚
2.54
1.25±0.15
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
7.62
0 to 15˚
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
1.25±0.15
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3, 5, 7. Anode, Cathode
2, 4, 6, 8. Cathode, Anode
9,11,13,15. Emitter
10,12,14,16. Collector
Caution New package 1-ch, 4-ch only
3
PS2505-1,-2,-4,PS2505L-1,-2,-4
Lead Bending Type
43
12
PS2505L-1 (New Package)
4.6 ± 0.35
6.5
3.8
MAX.
10.2 MAX.
87
12
65
34
PS2505L-2
20.3 MAX.
16 15
12
14 13
34
12 11
56
10 9
78
PS2505L-4
5.1 MAX.
PS2505L-1
20.3 MAX.
PS2505L-4 (New Package)
TOP VIEW
TOP VIEW
TOP VIEW
16 15
12
14 13
34
12 11
56
10 9
78
TOP VIEW
43
12
TOP VIEW
2.54
1.25±0.15
0.25
M
9.60 ± 0.4
0.90 ± 0.25
7.62
0.05 to 0.2
6.5
3.8
MAX.
2.54
1.25±0.15
0.25
M
9.60 ± 0.4
0.90 ± 0.25
7.62
0.05 to 0.2
6.5
3.8
MAX.
2.54
1.25±0.15
0.25
M
9.60 ± 0.4
0.90 ± 0.25
7.62
0.05 to 0.2
9.60 ± 0.4
0.90 ± 0.25
7.62
0.05 to 0.2
2.54
1.25±0.15
0.25
M
3.8
MAX. 6.5
2.54
1.25±0.15
0.25
M
9.60 ± 0.4
0.90 ± 0.25
7.62
0.05 to 0.2
3.8
MAX. 6.5
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
1, 3, 5, 7. Anode, Cathode
2, 4, 6, 8. Cathode, Anode
9,11,13,15. Emitter
10,12,14,16. Collector
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3, 5, 7. Anode, Cathode
2, 4, 6, 8. Cathode, Anode
9,11,13,15. Emitter
10,12,14,16. Collector
Caution New package 1-ch, 4-ch only
4
PS2505-1,-2,-4,PS2505L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Ratings
Parameter Symbol PS2505-1,
PS2505L-1 PS2505-2,-4
PS2505L-2,-4 Unit
Diode Forward Current (DC) IF±80 mA
Power Dissipati on Derating
∆
PD/°C 1.5 1.2 mW/°C
Power Dissipati on PD150 120 mW/ch
Peak Forward Current*1 IFP ±1A
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 7V
Collector Current IC50 mA/ch
Power Dissipati on Derating
∆
PC/°C 1.5 1.2 mW/°C
Power Dissipati on PC150 120 mW/ch
Isolat i on Voltage*2 B V 5 000 Vr.m. s.
Operating Am bi ent Tem perature TA−55 to +100 °C
Storage Temperat ure Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = ±10 mA 1.17 1.4 V
Terminal Capaci tance CtV = 0 V, f = 1. 0 M Hz 100 pF
Transistor Collector to E m i t ter Dark
Current ICEO VCE = 80 V, I F = 0 m A 100 nA
Coupled Current Transfer Ratio
(IC/IF)CTR IF = ±5 m A , VCE = 5 V 80 300 600 %
CTR Ratio *1 CTR1/
CTR2 IF = 5 mA, VCE = 5 V 0.3 1.0 3.0
Collector Saturatio n
Voltage VCE (sat) IF = ±10 mA, I C = 2 m A 0.3 V
Isolat i on Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF
Rise Time *2 trVCC = 10 V, I C = 2 mA, RL = 100 Ω3
µ
s
Fall Time *2 tf5
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 *2 Test circuit for switching time
V
CC
V
OUT
R
L
= 100 Ω
50 Ω
PW = 100 s
Duty Cycle = 1/10
µ
I
F
Pulse Input
I
F1
I
F2
I
C1
I
C2
V
CE
5
PS2505-1,-2,-4,PS2505L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °
°°
°C, unless otherwise specified)
150
100
50
0255075
100 125 150
1.5 mW/˚C
1.2 mW/˚C
150
100
50
25 50 100 125 1500
10 000
100
1 000
100
10
1
7550250–25–50
V
CE
= 80 V 10
1.0
0.80.60.40.20
5
1
0.5
0.1
10 mA
40
1.5 mW/˚C
1.2 mW/˚C
20 mA
50 mA
2 mA
I
F
= 1 mA
5 mA
40 V
24 V
10 V
5 V
PS2505-1
PS2505L-1
PS2505-2
PS2505L-2
PS2505-4
PS2505L-4
PS2505-1
PS2505L-1
PS2505-2
PS2505L-2
PS2505-4
PS2505L-4
–1.0
80
–1.5
–40
–80
–60
0
–0.5 0.5 1.5
1.0
0
–20
40
20
60
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0 ˚C
–25 ˚C
–55 ˚C
+60 ˚C
+25 ˚C
T
A
= +100 ˚C
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE(sat)
(V)
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA) Forward Current I
F
(mA)
Forward Voltage V
F
(V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
75
6
PS2505-1,-2,-4,PS2505L-1,-2,-4
1.2
–50
1.0
0.8
0.6
0.4
0.2
0–25 0 25 50 75 100
50
10
1
0.1 10 k
5 k
1 k
5001005010
1 000
100
10
1100 k50 k10 k5 k1 k500100
0
–5
–10
–15
–20
0.5 1 2 5 10 20 50 100200 500
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
I
C
= 2 mA,
V
CC
= 10 V,
CTR = 290 %
t
f
t
r
t
d
t
s
I
F
= 5 mA,
V
CC
= 5 V,
CTR = 290 %
t
s
t
d
t
r
t
f
I
F
= 5 mA,
V
CE
= 5 V
100 Ω
300 Ω
R
L
= 1 kΩ
70
2
60
50
40
30
20
10
046810
20 mA
I
F
= 5 mA
10 mA
50 mA
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 5 mA, V
CE
= 5 V
Forward Current I
F
(mA)
Ambient Temperature T
A
(˚C)
Load Resistance R
L
(Ω)Frequency f (kHz)
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Normalized Gain G
V
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
Switching Time t ( s)
µ
450
400
350
300
250
200
150
100
50
00.05 0.1 0.5 1 5 10 50
7
PS2505-1,-2,-4,PS2505L-1,-2,-4
T
A
= 25 ˚C
T
A
= 60 ˚C
1.2
1.0
0.8
0.6
0.4
0.2
010
2
10
3
10
4
10
5
Time (Hr)
CTR (Relative Value)
LONG TERM CTR DEGRADATION
I
F
= 5 mA (TYP.)
Remark The graphs indicate nominal characteristics.
8
PS2505-1,-2,-4,PS2505L-1,-2,-4
TAPING SPECIFICATIONS (in millimeters)
Tape Direction
PS2505L-1-E3
PS2505L-1-F3 PS2505L-1-E4
PS2505L-1-F4
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
Packing: PS2505L-1-E3, E4 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
16.4
+2.0
–0.0
PS2505L-1-E3, E4: 250
PS2505L-1-F3, F4: 330
φ
80.0±5.0
φ
φ
PS2505L-1-F3, F4 2 000 pcs/reel
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
5.6±0.1
8.0±0.1
9
PS2505-1,-2,-4,PS2505L-1,-2,-4
Tape Direction
PS2505L-2-E3 PS2505L-2-E4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
10.4±0.1
12.0±0.1
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
16.4
+2.0
–0.0
80.0±5.0
φ
330
φ
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
10
PS2505-1,-2,-4,PS2505L-1,-2,-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
11
PS2505-1,-2,-4,PS2505L-1,-2,-4
[MEMO]
PS2505-1,-2,-4,PS2505L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
