Features
l Low Reverse Recovery Time
l Low Reverse Capacitance
l Low Forward Voltage Drop
l Guard Ring Construction for Transient Protection
Mechanical Data
l Case: DO-35, Glass
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: Indicated by Cathode Band
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic Symbol SD101A SD101B SD101C
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 60V 50V 40V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 42V 35V 28V
Maximum sigle cycle surge 10us
square wave
IFSM
Power Dissipation(Note 1) Pd
Thermal Resistance, Junction to
Ambient
R
Junction Tmperature Tj
Operation/Storage Temp. Range TSTG -55 to +150oC
300K/W
400mW
2.0A
125oC
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic Symbol Max Test Condition
Leakage Current SD101A
SD101B
SD101C IR
200nA
200nA
200nA
V
R
=50V
VR=40V
VR=30V
Maximum Forward SD101A
Voltage Drop SD101B
SD101C
SD101A
SD101B
SD101C
VF
0.41V
0.4V
0.39V
1V
0.95V
0.9V
IF=1mA
IF=15mA
Junction Cap. SD101A
SD101B
SD101C Cj2.0pF
2.1pF
2.2pF VR=0V, f=1.0MHz
Reverse Recovery Time trr 1ns IF=IR=50mA, recover to
200mA/0.1I
R
Note: 1. Valid provided that electrodes are kept at ambient temperature
SD101A
THRU
SD101C
Small Signal
Schottky Diodes
DO-35
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A--- .166 --- 4.2
B--- .079 --- 2.00
C--- .020 --- .52
D1.000 --- 25.40 ---
A
B
C
D
D
Cathode
Mark
www.mccsemi.com
omponents
21201 Itasca Street Chatsworth
!"#
$% !"#
MCC
Figure 1. Typical variation of forward. current vs.fwd.
Voltage for primary conduction through the
schottky barrier
Figure 2. Typical forward conduction curve of
Schottky barrier and PN junction
combination
guard ring
Figure 4. Typical capacitance curve as a function
of reverse voltage
mA mA
mA
V
F
V
R
V
R
V
F
I
F
I
R
I
R
I
F
A
B
C
A
A
B
B
C
C
mA
Figure 3.Typical variation of reverse current
at versus temperature
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SD101A thru SD101C
MCC
