2N/PN/SST4391 Series N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391 SST4392 SST4393 Product Summary Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 -4 to -10 30 5 4 2N/PN/SST4392 -2 to -5 60 5 4 2N/PN/SST4393 -0.5 to -3 100 5 4 Features Benefits Applications Low On-Resistance: 4391<30 Fast Switching--tON: 4 ns High Off-Isolation: ID(off) with Low Leakage Low Capacitance: < 3.5 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Commutators Description The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. TO-206AA (TO-18) The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-S-19500 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-236 (SOT-23), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet. TO-226AA (TO-92) S D 1 S 2 1 TO-236 (SOT-23) D 3 S 2 3 D G 1 G 2 3 G and Case Top View Top View Top View 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391 (CA)* SST4392 (CB)* SST4393 (CC)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70241. Applications information may also be obtained via FaxBack, request document #70597 and 70599. Siliconix E-77090--Rev. E, 11-Aug-97 1 2N/PN/SST4391 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage: (2N/PN Prefixes) . . . . . . . . . . . . . . . -40 V (SST Prefix) . . . . . . . . . . . . . . . . . . . -35 V Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . -55 to 200 _C (PN/SST Prefixes) . . . . . . . . -55 to 150 _C Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation : Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix)a . . . . . . (TC = 25_C) 1800 mW (PN/SST Prefixes)b . . . . . . . . . . . 350 mW Notes a. Derate 10 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C (2N Prefix) . . . . . . . . . . . . . . -65 to 200 _C (PN/SST Prefixes) . . . . . . . . -55 to 150 _C Specificationsa Limits 4391 Parameter Symbol Test Conditions Typb Gate-Source Breakdown Voltage V(BR)GSS IG = -1 mA, VDS = 0 V -55 Min -40 4392 Max Min 4393 Max Min Max Unit Static Gate-Source Cutoff Voltage Saturation S t ti D Drain i Currentc VGS(off) GS( ff) IDSS VDS = 20 V VDS = 15 V VGS = -20 V VDS = 0 V Gate Reverse Current Gate Operating Current IGSS IG ID(off) VDS = 20 V TA = 150 C 150_C VDS = 20 V TA = 100 C 100_C VDS = 10 V TA = 125_C Drain-Source D i S On-Voltage On Voltage 2 VDS(on) VGS = 0 V -10 10 -22 -55 -0.5 05 -33 2N 50 150 25 75 5 30 50 150 25 100 5 60 SST 50 25 mA 5 2N/SST -5 -100 -100 -100 PN -5 -1000 -1000 -1000 2N: TA = 150_C -13 -200 -200 -200 PN: TA = 100_C -1 -200 -200 -200 SST: TA = 125_C -3 pA nA -5 2N: VGS = -5 V 5 2N: VGS = -7 V 5 100 100 2N: VGS = -12 V 5 PN: VGS = -5 V PN: VGS = -7 V 0.005 PN: VGS = -12 V 0.005 5 100 SST VDS = 10 V, VGS = -10 V Drain Cutoff Current -44 PN VDG = 15 V, ID = 10 mA VDS = 20 V -40 V 2N/PN: ID = 1 nA SST: ID = 10 nA VDS = 20 V, VGS = 0 V -40 100 0.005 2N: VGS = -5 V 13 2N: VGS = -7 V 13 2N: VGS = -12 V 13 PN: VGS = -5 V 1 PN: VGS = -7 V PN: VGS = -12 V 1 SST: VGS = -10 V 3 1 ID = 3 mA 0.25 ID = 6 mA 0.3 ID = 12 mA 0.35 pA 100 nA 100 pA 200 200 200 200 nA 200 200 0.4 0.4 0.4 Siliconix E-77090--Rev. E, 11-Aug-97 V 2N/PN/SST4391 Series Specificationsa Limits 4391 Parameter Typb Symbol Test Conditions Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA Gate-Source Forward Voltage VGS(F) IG = 1 mA VDS = 0 V Min 4392 Max Min 4393 Max Min Max Unit W Static (Cont'd) 2N 0.7 PN/SST 0.7 30 60 100 1 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Drain-Source On-Resistance Common-Source C S Input Capacitance Common Source Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage 6 mS 25 mS VDSS = 20 V, ID = 1 mA, f = 1 kHz rDS(on) Ciss Crss en VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 20 V V, VGS = 0 V f = 1 MHz VDS = 0 V f = 1 MHz 30 60 100 2N 12 14 14 14 PN 12 16 16 16 SST 13 2N: VGS = -5 V 3.3 2N: VGS = -7 V 3.2 2N: VGS = -12 V 2.8 PN: VGS = -5 V 3.5 PN: VGS = -7 V PN: VGS = -12 V 3.4 SST: VGS = -5 V 3.6 SST: VGS = -7 V 3.5 SST: VGS = -12 V 3.1 VDS = 10 V, ID = 10 mA f = 1 kHz 3.0 W 3.5 3.5 3.5 pF 5 5 5 nV Hz 3 Switching td(on) d( ) Turn On Time Turn-On tr td(off) d( ff) Turn-Off Time tf VDD = 10 V VGS(H) = 0 V See Switching Circuit 2N/PN 2 SST 2 2N/PN 2 SST 2 2N/PN 6 SST 6 2N/PN 13 SST 13 15 15 15 5 5 5 20 35 50 15 20 30 ns Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 ms duty cycle 3%. Siliconix E-77090--Rev. E, 11-Aug-97 NCB 3 2N/PN/SST4391 Series Typical Characteristics On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 160 80 IDSS rDS 60 120 40 80 20 40 0 0 0 -2 -4 -6 -8 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 V IDSS @ VDS = 20 V, VGS = 0 V On-Resistance vs. Drain Current 100 200 I DSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 100 TA = 25_C 80 VGS(off) = -2 V 60 40 -4 V -8 V 20 0 -10 1 10 VGS(off) - Gate-Source Cutoff Voltage (V) On-Resistance vs. Temperature tr approximately independent of ID VDD = 5 V, RG = 50 VGS(L) = -10 V ID = 1 mA rDS changes X 0.7%/_C 160 4 Switching Time (ns) rDS(on) - Drain-Source On-Resistance ( ) Turn-On Switching 5 200 120 VGS(off) = -2 V 80 -4 V -8 V 40 tr 3 td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA 1 0 0 -55 -35 -15 25 5 45 65 85 105 0 125 TA - Temperature (_C) -6 Capacitance (pF) VGS(off) = -2 V tf td(off) -10 18 12 Ciss 6 6 VGS(off) = -8 V Crss 0 0 0 2 4 6 ID - Drain Current (mA) 4 -8 f = 1 MHz VDS = 0 V 24 24 12 -4 Capacitance vs. Gate-Source Voltage 30 td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V 18 -2 VGS(off) - Gate-Source Cutoff Voltage (V) Turn-Off Switching 30 Switching Time (ns) 100 ID - Drain Current (mA) 8 10 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Siliconix E-77090--Rev. E, 11-Aug-97 2N/PN/SST4391 Series Typical Characteristics (Cont'd) Forward Transconductance and Output onductance vs. Gate-Source Cutoff Voltage* Noise Voltage vs. Frequency 100 50 g fs - Forward Transconductance (mS) (nV / Hz) e n - Noise Voltage 10 ID = 1 mA ID = 10 mA 1 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz 40 400 gfs 30 200 20 200 10 100 0 0 10 100 1k 10 k 0 100 k f - Frequency (Hz) 1 nA VDG = 10 V ID = 10 mA TA = 25_C gig big (mS) 1 mA 10 mA -10 10 1 mA 10 pA -8 Common-Gate Input Admittance ID = 10 mA 100 pA -6 100 IGSS @ 125_C TA = 125_C -4 -2 VGS(off) - Gate-Source Cutoff Voltage (V) Gate Leakage Current 10 nA I G - Gate Leakage gos g fs - Forward Transconductance ( m S) VDS = 10 V IGSS @ 25_C 1 TA = 25_C 1 pA IG(on) @ ID 0.1 0.1 pA 0 6 12 18 24 100 30 200 Common-Gate Forward Admittance Common-Gate Reverse Admittance 10 VDG = 10 V ID = 10 mA TA = 25_C -gfg bfg 1.0 10 (mS) gfg (mS) 1000 f - Frequency (MHz) VDG - Drain-Gate Voltage (V) 100 500 VDG = 10 V ID = 10 mA TA = 25_C -brg -grg +grg 0.1 1 0.1 100 200 500 f - Frequency (MHz) Siliconix E-77090--Rev. E, 11-Aug-97 1000 0.01 100 200 500 1000 f - Frequency (MHz) 5 2N/PN/SST4391 Series Typical Characteristics (Cont'd) Common-Gate Output Admittance Transconductance vs. Drain Current 100 100 VGS(off) = -2 V g fs - Forward Transconductance (mS) VDG = 10 V ID = 10 mA TA = 25_C bog (mS) 10 gog 1 0.1 TA = -55_C 25_C 10 125_C 1 100 200 500 0.1 1000 1.0 Output Characteristics 100 10 ID - Drain Current (mA) f - Frequency (MHz) Transfer Characteristics 100 VGS(off) = -4 V VGS(off) = -4 V VDS = 20 V 80 I D - Drain Current (mA) 80 I D - Drain Current (mA) VDS = 10 V f = 1 kHz VGS = 0 V 60 -0.5 V 40 -1.0 V -1.5 V 20 TA = -55_C 60 25_C 40 20 -2.0 V 125_C -2.5 V 0 0 2 4 6 8 0 10 0 VDS - Drain-Source Voltage (V) -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) VDD Switching Time Test Circuit RL 4391 4392 4393 VGS(L) -12 V -7 V -5 V RL* 800 W 1600 W 3000 W ID(on) 12 mA 6 mA 3 mA OUT VGS(H) VGS(L) *Non-inductive Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz 1 kW Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VIN Scope 51 W 51 W See Typical Characteristics curves for changes. 6 Siliconix E-77090--Rev. E, 11-Aug-97