4N25X001 - Vishay Presicion Group



2000 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany

www.osram-os.com • +49-941-202-7178 1 March 27, 2000-00

DESCRIPTION

This data sheet presents ﬁve families of Inﬁneon Industry Standard

Single Channel Phototransistor Couplers. These families include the

4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/

A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/

277 devices.Each optocoupler consists of Gallium Arsenide infra-

red LED and a silicon NPN phototransistor.

These couplers are Underwriters Laboratories (UL) listed to comply

with a 5300 V

RMS

Isolation Test Voltage. This isolation performance

is accomplished through Inﬁneon double molding isolation manu-

facturing process. Compliance to VDE 0884 partial discharge isola-

tion speciﬁcation is available for these families by ordering option 1.

Phototransistor gain stability, in the presence of high isolation volt-

ages, is insured by incorporating a TRansparent lOn Shield

(TRIOS)

on the phototransistor substrate. These isolation pro-

cesses and the Inﬁneon IS09001 Quality program results in the

highest isolation performance available for a commercial plastic

phototransistor optocoupler.

The devices are available in lead formed conﬁguration suitable for

surface mounting and are available either on tape and reel, or in

standard tube shipping containers.

.010 (.25)

typ.

.114 (2.90)

.130 (3.0)

.130 (3.30)

.150 (3.81)

.031 (0.80) min.

.300 (7.62)

typ.

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

.039

(1.00)

Min.

.018 (0.45)

.022 (0.55)

.048 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

pin one ID

18°

3°–9°

.300–.347

(7.62–8.81)

4°

typ.

Base

Collector

Emitter

Anode

Cathode

Dimensions in Inches (mm)

DEVICE TYPES

Part No. CTR % Min. Part No. CTR % Min.

4N25 20 MCT2 20

4N26 20 MCT2E 20

4N27 10 MCT270 50

4N28 10 MCT271 45–90

4N35 100 MCT272 75–150

4N36 100 MCT273 125–250

4N37 100 MCT274 225–400

4N38 10 MCT275 70–90

H11A1 50 MCT276 15–60

H11A2 20 MCT277 100

H11A3 20

H11A4 10

H11A5 30

FEATURES

• Interfaces with Common Logic Families

• Input-output Coupling Capacitance < 0.5 pF

• Industry Standard Dual-in-line 6-pin Package

• Field Effect Stable by TRIOS

• 5300 V

RMS

Isolation Test Voltage

• Underwriters Laboratory File #E52744

• VDE #0884 Approval Available with Option 1

APPLICATIONS

• AC Mains Detection

• Reed Relay Driving

• Switch Mode Power Supply Feedback

• Telephone Ring Detection

• Logic Ground Isolation

• Logic Coupling with High Frequency Noise

Rejection

Notes:

Designing with data sheet is covered in Application Note 45.

PHOTOTRANSISTOR

Industry Standard

Single Channel

6 Pin DIP Optocoupler



2000 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany

www.osram-os.com • +49-941-202-7178 2 March 27, 2000-00

Maximum Ratings

=25

Emitter

Reverse Voltage .......................................................................................... 6.0 V

Forward Current ........................................................................................ 60 mA

Surge Current (t

≤

s)............................................................................... 2.5 A

Power Dissipation................................................................................... 100 mW

Detector

Collector-Emitter Breakdown Voltage........................................................... 70 V

Emitter-Base Breakdown Voltage................................................................ 7.0 V

Collector Current ....................................................................................... 50 mA

Collector Current(t <1.0 ms).................................................................... 100 mA

Power Dissipation................................................................................... 150 mW

Package

Isolation Test Voltage.......................................................................... 5300 V

RMS

Creepage ..............................................................................................

≥

7.0 mm

Clearance .............................................................................................

≥

7.0 mm

Isolation Thickness between Emitter and Detector...............................

≥

0.4 mm

Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175

Isolation Resistance

=500 V,

=25

C...............................................................................10

Ω

=500 V,

=100

C............................................................................ 10

Ω

Storage Temperature................................................................ –55

C to +150

Operating Temperature ............................................................ –55

C to +100

Junction Temperature................................................................................ 100

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane

≥

1.5 mm) ...................................................... 260

4N25/26/27/28—Characteristics

=25

* Indicates JEDEC registered values

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage*

—1.3 1.5 V

=50 mA

Reverse Current*

—0.1 100

=3.0 V

Capacitance

—25 —pF

Detector

Breakdown Voltage* Collector-Emitter BV

CEO

30 ——V

=1.0 mA

Emitter-Collector BV

ECO

7.0 ——

=100

Collector-Base BV

CBO

70 ——

=100

CEO

(dark)* 4N25/26/27

4N28 ——5.0

10 50

100 nA

=10 V, (base open)

CBO

(dark)* ——2.0 20 nA

=10 V, (emitter open)

Capacitance, Collector-Emitter

—6.0 —pF

Package

DC Current Transfer Ratio* 4N25/26 CTR 20 50 —%

=10 V,

=10 mA

4N27/28 10 30 —

Isolation Voltage* 4N25

2500 ——V Peak, 60 Hz

4N26/27 1500 ——

4N28 500 ——

Saturation Voltage, Collector-Emitter

CE(sat)

——0.5 V

=2.0 mA,

=50 mA

Resistance, Input to Output*

100 ——G

Ω

=500 V

Coupling Capacitance

—0.5 —pF f=1.0 MHz

Rise and Fall Times

—2.0 —

=10 mA

=10 V,

=100

Ω



2000 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany

www.osram-os.com • +49-941-202-7178 3 March 27, 2000-00

4N35/36/37/38—Characteristics

=25

* Indicates JEDEC registered value

H11A1 through H11A5—Characteristics

=25

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage*

0.9 1.3 1.5

1.7 V

=10 mA

=10 mA,

=–55

Reverse Current*

0.1 10

=6.0 V

Capacitance

25 —pF

=0, f=1.0 MHz

Detector

Breakdown Voltage, Collector-Emitter* 4N35/36/37 BV

CEO

30 ——V

=1.0 mA

4N38 80 ——

Breakdown Voltage, Emitter-Collector* BV

ECO

7.0 ——V

=100

Breakdown Voltage, Collector-Base* 4N35/36/37 BV

CBO

70 ——V

=100

=1.0

4N38 80 ———

Leakage Current, Collector-Emitter* 4N35/36/37

CEO

—5.0 50 nA

=10 V,

4N38 ——50

=60 V,

Leakage Current, Collector-Emitter* 4N35/36/37

CEO

——500 µA

=30 V,

=0,

=100

4N38 —6.0 —

=60 V,

=0,

=100

Capacitance, Collector-Emitter

—6.0 —pF

Package

DC Current Transfer Ratio* 4N35/36/37 CTR 100 ——%

=10 V,

=10 mA,

4N38 20 ——

=1.0 V,

=20 mA

DC Current Transfer Ratio* 4N35/36/37 CTR 40 50 —%

=10 V,

=10 mA,

=–55 to 100

°C

4N38 ——30 ——

Resistance, Input to Output* RIO 1011 ——ΩVIO=500 V

Coupling Capacitance CIO —0.5 —pF f=1.0 MHz

Switching Time* tON, tOFF —10 —µs IC=2.0 mA, RL=100 Ω, VCC=10 V

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage H11A1–H11A4 VF—1.1 1.5 V IF=10 mA

H11A5 —1.1 1.7

Reverse Current IR——10 µAVR=3.0 V

Capacitance C0—50 —pF VR=0, f=1.0 MHz

Detector

Breakdown Voltage, Collector-Emitter BVCEO 30 ——VIC=1.0 mA, IF=0 mA

Breakdown Voltage, Emitter-Collector BVECO 7.0 ——VIE=100 µA, IF=0 mA

Breakdown Voltage, Collector-Base BVCBO 70 ——VIC=10 µA, IF=0 mA

Leakage Current, Collector-Emitter ICEO —5.0 50 nA VCE=10 V, IF=0 mA

Capacitance, Collector-Emitter CCE —6.0 —pF VCE=0

Package

DC Current Transfer Ratio H11A1 CTR 50 ——%VCE=10 V, IF=10 mA

H11A2/3 20 ——

H11A4 10 ——

H11A5 30 ——

Saturation Voltage, Collector-Emitter VCEsat ——0.4 V ICE=0.5 mA, IF=10 mA

Capacitance, Input to Output CIO —0.5 —pF —

Switching Time tON, tOFF —3.0 —µs IC=2.0 mA, RL=100 Ω, VCE=10 V

 2000 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany

www.osram-os.com • +49-941-202-7178 4 March 27, 2000-00

MCT2/MCT2E—Characteristics TA=25°C

MCT270 through MCT277—Characteristics TA=25°C

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage VF—1.1 1.5 V IF=20 mA

Reverse Current IR——10 µAVR=3.0 V

Capacitance CO—25 —pF VR=0, f=1.0 MHz

Detector

Breakdown Voltage Collector-Emitter BVCEO 30 ——VIC=1.0 mA, IF=0 mA

Emitter-Collector BVECO 7.0 —— IE=100 µA, IF=0 mA

Collector-Base BVCBO 70 —— IC=10 µA, IF=0 mA

Leakage Current Collector-Emitter ICBO —5.0 50 nA VCE=10 V, IF=0

Collector-Base ICBO ——20 —

Capacitance, Collector-Emitter —CCE —10 —pF VCE=0

Package

DC Current Transfer Ratio CTR 20 60 —%VCE=10 V, IF=10 mA

Capacitance, Input to Output CIO—0.5 —pF —

Resistance, Input to Output RIO —100 —GΩ—

Switching Time tON, tOFF —3.0 —µs IC=2.0 mA, RL=100 Ω, VCE=10 V

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage VF——1.5 V IF=20 mA

Reverse Current IR——10 µAVR=3.0 V

Capacitance CO—25 —pF VR=0, f=1.0 MHz

Detector

Breakdown Voltage Collector-Emitter BVCEO 30 ——VIC=10 µA, IF=0 mA

Emitter-Collector BVECO 7.0 —— IE=10 µA, IF=0 mA

Collector-Base BVCBO 70 ——— IC=10 µA, IF=0 mA

Leakage Current, Collector-Emitter ICEO ——50 nA VCE=10 V, IF=0 mA

Package

DC Current Transfer Ratio MCT270 CTR 50 ——%VCE=10 V, IF=10 mA

MCT271 45 —90

MCT272 75 —150

MCT273 125 —250

MCT274 225 —400

MCT275 70 —210

MCT276 15 —60

MCT277 100 ——

Current Transfer Ratio, Collector–Emitter MCT271–276 CTRCE 12.5 ——%VCE=0.4 V, IF=16 mA

MCT277 40 ———

Collector–Emitter Saturation Voltage VCEsat ——0.4 VICE=2.0 mA, IF=16 mA

Capacitance, Input to Output CIO —0.5 —pF —

Resistance, Input to Output RIO —1012 —ΩVIO=500 VDC

Switching Time MCT270/272 tON, tOFF ——10 µsIC=2.0 mA,

RL=100 Ω,

VCE=5.0 V

MCT271 ——7.0

MCT273 ——20

MCT274 ——25

MCT275/277 ——15

MCT276 ——3.5

 2000 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany

www.osram-os.com • +49-941-202-7178 5 March 27, 2000-00

Figure 9. Forward Voltage vs. Forward Current

Figure 10. Normalized Non-saturated and Saturated

CTR, TA=25°C vs. LED Current

Figure 11. Normalized Non-saturated and Saturated

CTR, TA=50°C vs. LED Current

100101.1

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

IF - Forward Current - mA

VF - Forward Voltage - V

TA = –55°C

TA = 25°C

TA = 85°C

Normalized to:

0.0

0.5

1.0

1.5

0 1 10 100

IF - LED Current - mA

NCTR

NCTR(SAT)

NCTR - Normlized CTR

CTRce(sat) Vce=0.4 V

Vce=10 V, IF=10 mA, TA=25°C

TA=25°C

100101.1

0.0

0.5

1.0

1.5

IF - LED Current - mA

NCTR - Normalized CTR

Normalized to:

CTRce(sat) Vce=0.4 V

Vce=10 V, IF=10 mA, TA=25°C

NCTR

NCTR(SAT)

TA=50°C

Figure 12. Normalized Non-saturated and Saturated

CTR, TA=70°C vs. LED Current

Figure 13. Normalized Non-saturated and Saturated

CTR, TA=85°C vs. LED Current

Figure 14. Collector-emitter Current vs. Temperature

and LED Current

100101.1

0.0

0.5

1.0

1.5

IF - LED Current - mA

NCTR - Normalized CTR

Normalized to:

CTRce(sat) Vce=0.4 V

Vce=10 V, IF=10 mA, TA=25°C

NCTR

NCTR(SAT)

TA=70°C

100101.1

0.0

0.5

1.0

1.5

IF - LED Current - mA

NCTR - Normalized CTR

Normalized to:

CTRce(sat) Vce = 0.4 V

Vce=10 V, IF=10 mA, TA=25°C

NCTR

NCTR(SAT)

TA=85°C

6050403020100

50°C

70°C

85°C

IF - LED Current - mA

Ice - Collector Current - mA

25°C

 2000 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany

www.osram-os.com • +49-941-202-7178 6 March 27, 2000-00

Figure 15. Collector-emitter Leakage Current vs. Temp.

Figure 16. Normalized CTRcb vs. LED Current and Temp.

Figure 17. Normalized Photocurrent vs. IF and Temp.

100806040200–20

–2

–1

TA - Ambient Temperature - °C

Iceo - Collector-Emitter - nA

Typical

Vce = 10 V

Normalized to:

0.0

0.5

1.0

1.5

25°C

50°C

70°C

IF - LED Current - mA

NCTRcb - Normalized CTRcb

.1 1 10 100

Vcb=9.3 V, IF=10 mA, TA=25°C

Normalized to:

0.01

0.1

IF - LED Current - mA

Normalized Photocurrent

.1 1 10 100

IF=10 mA, TA=25°C

Nib, TA=–20°C

Nib, TA=25°C

Nib, TA= 50°C

Nib, TA=70°C

Figure 18. Normalized Non-saturated HFE vs. Base

Current and Temperature

Figure 19. Normalized HFE vs. Base Current and Temp.

Figure 20. Propagation Delay vs. Collector Load Resistor

Normalized to:

0.4

0.6

0.8

1.0

1.2

Ib - Base Current - µA

1 10 100 1000

Ib=20 µA, Vce=10 V, T

=25°C

25°C

50°C

70°C

–20°C

NHFE - Normalized HFE

0.0

0.5

1.0

1.5

25°C

–20°C

50°C

70°C

NHFE(sat) - Normalized

Saturated HFE

1 10 100 1000

Vce=10 V, Ib=20 µA

TA=25°C

Vce=0.4 V

Ib - Base Current - µA

Normalized to:

100

1000

RL - Collector Load Resistor - kΩ

tPLH - Propagation Delay - µs

2.5

2.0

1.5

1.0

tPHL - Propagation Delay - µs

.1 1 10 100

IF=10 mA, TA=25°C

=5.0 V, Vth=1.5 V

tPLH

tPHL

Figure 21. Switching Timing

=1.5 V

tStF

tPHL

tPLH

VTH

Figure 22. Switching Schematic

VCC = 5.0 V

F=10 KHz,

DF=50% RL

IF=10 mA