2SK3492
Rev.0 I Page 1 of 4 I www.onsemi.com
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V dri ve.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID8A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 32 A
Allowable Power Dissipation PD1W
Tc=25°C15W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=4A 3 5 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=4A, VGS=10V 115 150 mΩ
RDS(on)2 ID=4A, VGS=4V 155 220 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 300 pF
Output Capacitance Coss VDS=20V, f=1MHz 54 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 34 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise Time trSee specified Test Circuit. 32 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 30 ns
Fall T ime tfSee specified Test Circuit. 44 ns
Continued on next page.
Ordering number : ENN8279
2SK3492 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
2SK3492/D
2SK3492
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=30V, VGS=10V, ID=8A 7.8 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=8A 2.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=8A 1.7 nC
Diode Forward Voltage VSD IS=8A, VGS=0V 0.9 1.2 V
Package Dimensions Package Dimensions
unit : mm unit : mm
7518-004 7003-004
Switching Time Test Circuit
6.5
5.0 2.3 0.5
12
4
3
0.85
0.7 1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8 5.5 1.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
ID -- VGS
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
1
2
3
4
5
6
7
8
0123456
0
IT09598 IT09599
00.20.1 0.4 0.80.6 1.0 1.2 1.40.3 0.5 0.90.7 1.1 1.3 1.5
1
2
4
6
3
5
7
8
0
VGS=3.5V
Ta=75°C
Ta= --25°C
--25
°
C
25°C
25°C
75°C
VDS=10V
4.0V
16.0V
6.0V
10.0V
5.0V
8.0V
PW=10µs
D.C.≤1%
10V
0V
VIN
P.G 50Ω
G
S
ID=4A
RL=7.5Ω
VDD=30V
VOUT
VIN
D
2SK3492
6.5
5.0
2.3 0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK3492
Rev.0 I Page 3 of 4 I www.onsemi.com
A S O
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
IS -- VSD
y
fs -- ID
SW Time -- ID
Drain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
RDS(on) -- Ta
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, VGS -- V
1
0
2
3
4
5
6
7
8
9
10
012345678
051015 20 25 30
2
2
100
7
5
3
7
5
3
0.1 23 57
1.0 23 57
10
2
2
10
100
7
5
3
7
5
3
1.0
10
2
0.1
2
7
5
3
2
1.0
7
5
3
7
5
3
0.01
IT09602 IT09603
IT09605
0.01 23 57
0.1 23 57
1.0 23 57
10 0.2 0.4 0.6 0.8 1.0 1.2
IT09604
IT09607
0.01 23 57 2
0.1 357 2
1.0
10
2
0.1
2
7
5
3
7
5
3
0.01
VDS=10V
25°C
--25
°
C
VGS=0V
f=1MHz
Ciss
Crss
Coss
VDD=30V
VGS=10V
td(on)
IT09606
VDS=30V
ID=8A
td(off)
Ta=75
°
C
IDP=32A
ID=8A
DC Operation
<10µs
100µs
1ms
10ms
Operation in this
area is limited by RDS(on).
Tc=25°C
Single pulse
0.1
2
7
5
3
2
2
1.0
7
5
3
2
0.01
Ta= --25°C
25
°
C
75°C
tr
tf
100ms
357 2
10 357
100
10
7
5
3
2
7
5
3
0
50
100
150
200
250
300
350
--60 --40 --20 0 20 40 60 80 100 120 140 160
50024 86101214161820
100
150
200
250
300
350
IT09600 IT09601
Ta=25°C
ID=4A
ID=4A, VGS=4V
ID=4A, VGS=10V
2SK3492
Rev.0 I Page 4 of 4 I www.onsemi.com
PD -- Ta PD -- Tc
Amibient Tamperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Tamperature, Tc -- °C
Allowable Power Dissipation, PD -- W
IT09609
0020406080100120 140 160
5
20
15
10
IT09608
00
1.2
1.0
0.6
0.2
0.8
0.4
20 40 60 80 100 120 140 160
No heat sink
2SK3492/D
 
    
   !"# $%

&!'# '"# !! ' (( ' ! ) * $%+
*& ! ' # '"#  !! ' ( ( ' # ) * $%+

&,
   
& !!'" "'-)*
$%+
 
&
.& (" #-! "-!
 !  !
.& ''##' !
"  #$
&
www.onsemi.com
" 
&./&++000+
*   /  1 
 2/
%!" "&' ""
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply
high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameter s which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and
products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create
a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or u nauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.