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TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP105 / TIP 107 Rev. 1.1.0
December 2014
TIP105 / TIP107
PNP Epitaxial Silicon Darlington Transistor
Features
Monolithic Constructi on with Built-in Base -Emitte r
Shunt Resistors
High DC Current Gain:
hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industr ial Use
Complementary to TIP102
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP105 TIP105 TO-220 3L (Single Gauge) Bulk
TIP105TU TIP105 TO-220 3L (Single Gauge) Rail
TIP107 TIP107 TO-220 3L (Single Gauge) Bulk
TIP107TU TIP107 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP105 -60 V
TIP107 -100
VCEO Collector-Emitter Voltage TIP105 -60 V
TIP107 -100
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -8 A
ICP Collector Current (Pulse) -15 A
IBBase Current (DC) -1 A
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
R1 10kΩ
R2 0.6kΩ
Equivalent Circuit
B
E
C
R1 R2
TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP105 / TIP 107 Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics(1)
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 80
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage TIP105 IC = -30 mA, IB = 0 -60 V
TIP107 -100
ICEO Collector Cut-Off Current TIP105 VCE = -30 V, IB = 0-50
μA
TIP107 VCE = -50 V, IB = 0-50
ICBO Collector Cut-Off Current TIP105 VCB = -60 V, IE = 0 -50 μA
TIP107 VCB = -100 V, IE = 0 -50
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -2 mA
hFE DC Current Gain VCE = -4 V, IC = -3 A 1000 20000
VCE = -4 V, IC = -8 A 200
VCE(sat) Collector-Emitter Saturation
Voltage IC = -3 A, IB = -6 mA -2.0 V
IC = -8 A, IB = -80 mA -2.5
VBE(on) Base-Emitter On Voltage VCE = -4 V, IC = -8 A -2.8 V
Cob Output Capacitance VCB = -10 V, IE = 0,
f = 0.1 MHz 300 pF
TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP105 / TIP 107 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
IB = -800μA
IB = -900 μA
IB = -1000μA
IB = -700μA
IB = -600μA
IB = -500μA
IB = -400μA
IB = -300 μA
IB = -200μA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR -EMITTER VOLTA GE
-0.1 -1 -10
100
1k
10k
VCE = -4V
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-100
-1k
-10k
-100k
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat) [m V], SATU R ATI ON VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
1
10
100
1k
10k
f = 0.1 MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
-100
TIP106
TIP107
TIP105
5ms
100
μ
s
1ms
DC
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP105 / TIP 107 Rev. 1.1.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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